Scanning NV Microscopy

We introduce Scanning NV Microscopy (SNVM) as a non-contact characterization technique to investigate magnetic materials and thin films. We show that SNVM can be used to evaluate MRAM performance at the individual bit level. Magnetic random-access memory (MRAM) is a leading emergent memory technology that is poised to replace current non-volatile memory technologies such as eFlash. However, controlling and improving distributions of device properties becomes a key enabler of new applications at this stage of technology development. Here, We demonstrate magnetic reversal characterization in individual, &lt; 60 nm sized bits, to extract key magnetic properties, thermal stability, and switching statistics, and thereby gauge bit-to-bit uniformity. We showcase the performance of our method by benchmarking two distinct bit etching processes immediately after pattern formation.<br/>Finally, we will provide other examples of the applications of SNVM for the study of multiferroics, 2D materials, and magnonics.