Tadesse Billo Reta1,Daniel Durham1,Yan Li1,Jill Wenderott2,Hua Zhou1,Supratik Guha1,Dillon Fong1
Argonne National Laboratory1,Drexel University2
Tadesse Billo Reta1,Daniel Durham1,Yan Li1,Jill Wenderott2,Hua Zhou1,Supratik Guha1,Dillon Fong1
Argonne National Laboratory1,Drexel University2
Varying the oxygen concentration in many transition metal oxides can be used to tailor electronic properties, making oxide heterostructures of great interest in ionotronics and novel memory devices. We investigate epitaxial SrCoO<sub>x</sub> heterostructures, depositing insulating SrCoO<sub>2.5 </sub>and conducting SrCoO<sub>3</sub> layers and bilayers on SrTiO<sub>3</sub> (001) substrates. The resistive switching properties of the heterostructures depend on structural and electronic phase transitions as governed by ion insertion and extraction. The volume fraction of the different phases significantly influences switch behavior, affording fine control and revealing distinct traits in low-voltage I-V sweeps, especially during DC forming. We employ coherent synchrotron techniques such as X-ray Photon Correlation Spectroscopy (XPCS) during ionic liquid gating to shed light on the dynamics of oxygen ion insertion and extraction. We will discuss these results and findings from electrical device characterization, emphasizing the reliability and performance of these structures.