Mimicking Positive Aging using Atomic Layer Deposition of Alumina in Quantum Dot Light-Emitting Diodes

When and Where

Apr 23, 2024
5:00pm - 7:00pm

Flex Hall C, Level 2, Summit

Presenter

Haoyue Wan

Euidae Jung

Pan Xia

Benjamin Rehl

Ruiqi Zhang

Yanjiang Liu

Yakun Wang

Sjoerd Hoogland

Vladimir Bulovic

Edward Sargent

Co-Author(s)

Haoyue Wan¹,Euidae Jung¹,Pan Xia¹,Benjamin Rehl¹,Ruiqi Zhang²,Yanjiang Liu¹,Yakun Wang¹,Sjoerd Hoogland¹,Vladimir Bulovic²,Edward Sargent¹

University of Toronto¹,Massachusetts Institute of Technology²

Abstract

Haoyue Wan¹,Euidae Jung¹,Pan Xia¹,Benjamin Rehl¹,Ruiqi Zhang²,Yanjiang Liu¹,Yakun Wang¹,Sjoerd Hoogland¹,Vladimir Bulovic²,Edward Sargent¹

University of Toronto¹,Massachusetts Institute of Technology²

Quantum dot light-emitting diodes (QD-LEDs) frequently exhibit a unique characteristic known as positive aging, where their efficiency improves over time. In this study, we delve into the underlying causes of this behavior. Our findings suggest that the densification of the ZnMgO electron transport layer plays a pivotal role in this process. As the device undergoes shelf-aging, ZnMgO nanoparticles coalesce, leading to a reduction in leakage current and a decrease in surface vacancies within the ZnMgO layer. To expedite the device's performance without waiting for the positive aging effect, we introduced an Al2O3 layer via atomic layer deposition between the ZnMgO and the electrode. This modification resulted in red InP QD-LEDs showcasing a remarkable 1.3-fold boost in efficiency and a tenfold enhancement in stability, underscoring the potential of the Al2O3 layer in optimizing QD-LED performance.