Ching-Tzu Chen1,Christian Lavoie1,Nicholas Lanzillo1,Utkarsh Bajpai1,Oki Gunawan1,Asir Intisar Khan1,2,John Bruley1,Guy Cohen1,Vesna Stanic1,Hsin Lin3,Ion Garate4,Gengchiau Liang5,Shang-Wei Lien6,Yi-Hsin Tu5,6,Sushant Kumar7,Ravishankar Sundararaman7,Peter Kerns1,Teodor Todorov1,Nathan Marchack1,Jean Jordan-Sweet1,Cheng-Yi Huang8,Arun Bansil6,Tay-Rong Chang6
IBM T.J. Watson Research Ctr1,Stanford University2,Academia Sinica3,Université de Sherbrooke4,National University of Singapore5,National Cheng Kung University6,Rensselaer Polytechnic Institute7,Northeastern University8
Ching-Tzu Chen1,Christian Lavoie1,Nicholas Lanzillo1,Utkarsh Bajpai1,Oki Gunawan1,Asir Intisar Khan1,2,John Bruley1,Guy Cohen1,Vesna Stanic1,Hsin Lin3,Ion Garate4,Gengchiau Liang5,Shang-Wei Lien6,Yi-Hsin Tu5,6,Sushant Kumar7,Ravishankar Sundararaman7,Peter Kerns1,Teodor Todorov1,Nathan Marchack1,Jean Jordan-Sweet1,Cheng-Yi Huang8,Arun Bansil6,Tay-Rong Chang6
IBM T.J. Watson Research Ctr1,Stanford University2,Academia Sinica3,Université de Sherbrooke4,National University of Singapore5,National Cheng Kung University6,Rensselaer Polytechnic Institute7,Northeastern University8
Due to surface and disorder scattering, resistivity of metal wires keeps increasing with shrinking dimensions, which severely impacts the performance of highly scaled integrated circuits. Here we explore a new class of materials – topological semimetals – as an alternative solution. We demonstrate that, via conduction of the protected surface electronic states, resistivity in topological semimetals reduces with decreasing feature size down to ~ nm scale, even in the presence of defects and grain-boundary scattering. This novel scaling behavior sharply contrasts that of conventional metals, such as Cu, and topological insulators. In this talk, we will first present first-principles-based electrical transport calculations of a Si-CMOS compatible topological semimetal CoSi and a prototypical Weyl semimetal NbAs. We will then report experimental evidence for surface-dominated transport in CoSi thin films, showing resistivity below that of the bulk single-crystals. Our proof-of-principle study demonstrates the potential of topological semimetal as beyond Cu interconnect materials.