Eun-Mi Choi1,2,Taesoo Kim1,2,Byeong Wook Cho1,2,Young Hee Lee1,2
Institute for Basic Science (IBS)1,Sungkyunkwan University2
Eun-Mi Choi1,2,Taesoo Kim1,2,Byeong Wook Cho1,2,Young Hee Lee1,2
Institute for Basic Science (IBS)1,Sungkyunkwan University2
Spin-orbit coupling (SOC) possesses versatile functionalities including magneto-crystalline anisotropy, Dzyaloshinskii–Moriya interaction, and effective conversion from charge to spin current. Engineering the strength of SOC is a core to control the conversion efficiency, complex magnetic spin structures, and spin torque. Layered van der Waals (vdW)-transition metal dichalcogenides (TMDs) with intrinsic large SOC and associated spin textures have attracted immense interest. In this work, we use all-van der Waals-layered heterostructure, Fe<sub>3</sub>GeTe<sub>2</sub> (FGT)/monolayer W1-xVxSe<sub>2</sub>, (x = 0, 0.05, 0.1 and 0.15), for SOC strength effect on magnetic ordering of FGT. We found that various magnetic ordering such as spin-flop, spin-flip and inverted magnetization is induced as varying V-doping concentration (i.e. modulating SOC strength). The large SOC enhances magneto-crystalline anisotropy at the proximitized FGT and subsequently stabilizes the long-range magnetic order in FGT. It results in elevating ferromagnetic Curie temperature. We further demonstrate a sharp magnetic switching from antiferromagnetic to ferromagnetic in FGT/W<sub>0.95</sub>V<sub>0.05</sub>Se<sub>2</sub>, which is characteristic of the synthetic antiferromagnetic structure. Our proof-of-concept result offers the possibility of interface-tailoring spintronics including two-dimensional magnetoresistive random access memory toggle switching.