Pierre Seneor1,Julian Peiro1,Victor Zatko1,Hao Wei1,Frederic Brunnett1,Simon Dubois1,Marta Galbiati2,Regina Galceran3,Maëlis Piquemal-Banci1,Florian Godel1,Jean-Christophe Charlier4,Piran Ravichandran Kidambi5,Robert Weatherup6,Stephan Hofmann7,John Robertson7,Mauro Och8,Cecilia Mattevi8,Aymeric Vecchiola1,Karim Bouzehouane1,Sophie Collin1,Albert Fert1,Frédéric Petroff1,Marie-Blandine Martin1,Bruno Dlubak1
Université Paris-Saclay1,Universitat de València2,Institute de Ciencia de Materials3,Université Catholique de Louvain4,Vanderbilt University5,University of Oxford6,University of Cambridge7,Imperial College London8
Pierre Seneor1,Julian Peiro1,Victor Zatko1,Hao Wei1,Frederic Brunnett1,Simon Dubois1,Marta Galbiati2,Regina Galceran3,Maëlis Piquemal-Banci1,Florian Godel1,Jean-Christophe Charlier4,Piran Ravichandran Kidambi5,Robert Weatherup6,Stephan Hofmann7,John Robertson7,Mauro Och8,Cecilia Mattevi8,Aymeric Vecchiola1,Karim Bouzehouane1,Sophie Collin1,Albert Fert1,Frédéric Petroff1,Marie-Blandine Martin1,Bruno Dlubak1
Université Paris-Saclay1,Universitat de València2,Institute de Ciencia de Materials3,Université Catholique de Louvain4,Vanderbilt University5,University of Oxford6,University of Cambridge7,Imperial College London8
Spin-based electronics, recently highlighted as a leading candidate for highly efficient and ultrafast embedded memories (such as MRAMs) and post-CMOS unconventional electronics strategies (including spin logics, stochastic, neuromorphic and quantum computing), have enjoyed considerable growth. Beyond the fundamental spin transport properties of graphene, 2D materials have unleashed a multitude of previously untapped possibilities for spintronic devices in terms of functionality and performance, ranging from gate control to topology.<br/><br/>Indeed, 2D materials offer the unlimited possibility of exposing their electronic structure to manipulation by proximity effects. We will demonstrate that this could be harnessed to shape the properties of 2Ds and van der Waals heterostructures in quantum devices[1] and materials. We will more specifically focus on how this can be leveraged in devices such as 2D based Magnetic Tunnel Junctions (2D-MTJs)[2,3].<br/><br/>Relying mostly on large scale 2D materials, we will give examples of spin manipulation and new mechanisms ranging from almost perfect 2D spin-filtering with -98% spin polarization in graphene [4] and up to 500% MR in black-phosphorous, to 2D material proximity hybridization leading to insulator-to-metal transition (spinterface) [5]. We will finally focus on 2D-magnets, and moreover show how this proximity effect can also be pushed further to create an artificial 2D magnet [6] relying on proximity interaction of graphene with a ferromagnetic insulator, towards a fully gateable 2D-MTJ for spin logics.<br/><br/>Acknowledgements: we acknowledge EU Horizon 2020 Graphene Flagship (881603), SKYTOP (824123) projects. France 2030 government grant managed by the French National Research Agency (ANR-22-PEEL-0011, ANR-23-SPIN) and French ONSET (ANR22-CE09-0010).<br/><br/><br/>References<br/><br/>Zatko et al. ACS Nano 15, 7279 (2021)<br/>Piquemal-Banci et al. J. Phys. D 50 203002 (2017)<br/>Yang et al. Nature 606, 663 (2022)<br/>Zatko et al. ACS Nano 16, 14007 (2022)<br/>Piquemal-Banci et al. ACS Nano 12, 4712 (2018) & Nat. Com. (2020)<br/>Zatko et al. Nanoletters 23, 34 (2023)