Scalable 2D Material-Based Plasmonic Phototransistors

Monolayer transition metal dichalcogenides (TMDs) are promising materials for electronics and photonics at highly scaled lateral dimensions. However, their low photon absorption poses a challenge for high-performance optoelectronic devices. We present plasmonic phototransistors (photoFETs) that integrate monolayer molybdenum disulfide (MoS2) with plasmonic metasurfaces [1-2], such as Ag, Bi, HfN, and TiN. These plasmonic photoFETs exhibit a significant enhancement in photocurrent compared to pristine 2D photoFETs, enabling high-performance devices with ultrahigh photoresponsivity. The enhancement is achieved through plasmonic nanostructures that enhance light absorption [1-4], photo- carrier generation, photo-gating, and hot-carrier transfer rates. We also discuss the design of 2D material- based plasmonic photodetectors that can be extended to other 2D materials, facilitating the development of ultrathin, high-performance scalable optoelectronic devices. Lastly, we explore the prospects for next- generation ultra-compact optoelectronic devices in the trans-Moore era, where traditional silicon-based electronics face limitations. The integration of monolayer 2D materials with plasmonic metasurfaces offers an avenue for enhancing optoelectronic device performance, while the design flexibility enables the utilization of various 2D materials. These advancements hold promise for developing ultrathin, high- performance optoelectronic devices for applications in telecommunications, sensing, and data processing.<br/>Reference<br/>[1] Hao-Yu Lan, Yu-Hung Hsieh, Zong-Yi Chiao, Deep Jariwala, Min-Hsiung Shih, Ta-Jen Yen, Ortwin Hess, Yu-<br/>Jung Lu*, Gate-Tunable Plasmon-Enhanced Photodetection in a Monolayer MoS2 Phototransistor with Ultrahigh<br/>Photoresponsivity. Nano Lett. 21, 3083–3091 (2021)<br/>[2] Ching-Han Mao, Chin-Chien Chung, Wei-Ren Syong, Yu-Chi Yao, Kai-Yuan Hsiao, Ming-Yen Lu, Mario<br/>Hofmann, Ya-Ping Hsieh, Yu-Jung Lu, and Ta-Jen Yen*. Bifunctional Semimetal as a Plasmonic Resonator and<br/>Ohmic Contact for an Ultrasensitive MoS2 Photodetector. ACS Photonics 10, 1495–1503 (2023)<br/>[3] Z-Y Chiao, Y-C Chen, J-W Chen, Y-C Chu, J-W Yang, T-Y Peng, W-R Syong, H W H. Lee, S-W Chu, and Y-J<br/>Lu*, Full-Color Generation Enabled by Refractory Plasmonic Crystals. Nanophotonics 11, 2891-2899 (2022)<br/>[4] Y-H Hsieh, B-W Hsu, K-N Peng, K-W Lee, C W Chu, S-W Chang, H-W Lin*, T-J Yen*, and Y-J Lu*, Perovskite<br/>Quantum Dot Lasing in a Gap-Plasmon Nanocavity with Ultralow Threshold, ACS Nano 14, 11670 (2020).