Room Temperature sub-THz (300 GHz) Plasma Wave Generation in p-Diamond TeraFET

The growing demand for efficient and compact terahertz (THz) sources operating at room temperature is driven by their wide-ranging applications in spectroscopy, imaging, and communication systems. Hydrodynamic transport modeling of TeraFETs (Terahertz Field-Effect Transistors) has revealed that p-diamond is a promising material for sub-THz applications beyond 5G. P-diamond, characterized by its large carrier effective mass, exhibits longer momentum relaxation times compared to other semiconductor materials, rendering it advantageous for generating THz radiation at lower frequencies. This paper presents a comprehensive hydrodynamic modeling study of a p-diamond-based TeraFET acting as a THz source. Our simulations show that p-diamond TeraFETs could support channel carrier oscillations at THz frequencies below 1 THz at room temperature operating as THz sources enabled by the Dyakonov-Shur instability.<br/>To investigate the performance of the p-diamond TeraFETs, we conducted a thorough numerical analysis using a 1D hydrodynamic model. This model incorporates viscosity effects and considers damping resulting from electron scattering by impurities and phonons. Our simulations conclusively demonstrate the efficacy of the p-diamond TeraFET in emitting resonant THz radiation at a frequency of 300 GHz at room temperature when biased by a DC current. We explored the dependencies of the resonant oscillations on the channel length, drift velocity, and gate bias. These dependencies guide precise tuning of the emitted THz radiation. Our analysis predicts the minimum drift velocity necessary to overcome the decay factor caused by scattering and viscosity effects, ensuring robust resonant oscillation. These findings shed light on the p-diamond TeraFET's operation and aid in optimizing its performance as a sub-THz source.