MRS Meetings and Events

 

EL04.02.05 2023 MRS Fall Meeting

Enhanced Photodetection and Resistant Switching in CVD Grown MoS2: A Potential Neuromorphic Photo-memristor

When and Where

Nov 28, 2023
3:30pm - 4:00pm

Hynes, Level 3, Room 313

Presenter

Co-Author(s)

Govind Gupta1,2,Pukhraj Prajapat1,2

National Physical Laboratory1,Academy of Scientific & Innovative Reserach2

Abstract

Govind Gupta1,2,Pukhraj Prajapat1,2

National Physical Laboratory1,Academy of Scientific & Innovative Reserach2
The rapid development of neuromorphic computing has stimulated the research of novel materials and technologies to emulate the remarkable capabilities of the human brain. Two-dimensional transition metal dichalcogenides (2D-TMDs) have become interesting options in this scenario because of their distinctive electrical and optical characteristics. For its potential use in photodetection and memristive devices, molybdenum disulfide (MoS<sub>2</sub>) has drawn much attention among them. MoS<sub>2</sub> is a viable material for future neuromorphic computing systems due to its unique qualities, which include its effective light-matter interaction, atomically thin structure, and customizable electrical characteristics. To establish an approach for advancing a neuromorphic photo-memristor, we examine the few layers of growth of MoS<sub>2</sub> using CVD and explore the potential for boosted photodetection and resistive switching. Photoluminescence and Uv-Visible spectroscopy were used to characterize the optical characteristics of MoS<sub>2</sub>, which demonstrated its potent excitonic emission and tunability concerning the number of atomic layers. The effective charge separation and transport in the atomically thin MoS<sub>2</sub> channel are responsible for the extraordinary photoresponsivity and low dark current displayed by the fabricated MoS<sub>2</sub> photodetectors. The enhanced photodetection performance was further demonstrated by measuring the responsivity under different light intensities (15mW to 2.85mW) and 532 nm wavelength. Additionally, the resistive switching behavior of MoS<sub>2</sub> was examined, which revealed potential memristive properties. The Au/ MoS<sub>2</sub>/Au device exhibits typical bipolar switching behavior with a low working voltage, extended retention time, high resistance ratio (~103), and strong endurance (104 cycles), which has enormous potential for neuromorphic computing applications. The analysis revealed the possibility of producing energy-efficient, brain-inspired computing platforms thanks to the integration of photodetection and resistant switching in a single chip.

Keywords

2D materials

Symposium Organizers

Simone Fabiano, Linkoping University
Paschalis Gkoupidenis, Max Planck Institute
Zeinab Jahed, University of California, San Diego
Francesca Santoro, Forschungszentrum Jülich/RWTH Aachen University

Symposium Support

Bronze
Kepler Computing

Publishing Alliance

MRS publishes with Springer Nature