Hydrogen-Assisted Sputtering Process for Enhanced Mechanical Stability of Oxide Thin Films in Flexible Electronics

Transparent oxide semiconductors have gained widespread use in electronic devices such as flat panel displays and solar cells. The increasing demand for flexible devices necessitates ensuring the long-term stability of oxide semiconductor thin films under bending stress. Recent theoretical and experimental studies have identified hydrogen species as significant impurities in many oxide semiconductor thin films. In this study, we present a novel approach to fabricating the hydrogen-incorporated amorphous In-Zn-O and In-Sn-O thin films using a hydrogen-assisted magnetron sputtering process. Through careful optimization of the hydrogen concentration, we achieved remarkable improvements in the mechanical stability of the thin films while simultaneously preserving their electrical and optical properties. Notably, the introduction of hydrogen resulted in a gradual reduction in the compressive residual stress of the films, highlighting its potential as a promising candidate for defect passivation in flexible electronics. These findings provide insights into enhancing the durability of oxide-based flexible electronic devices.