Unveiling the Dynamics of Defect Activation and Migration in Monolayer MoS2 under Strain

The remarkable capacity of two-dimensional (2D) materials to endure substantial strains and their ability to tune optoelectronic properties under strain positions them as highly promising contenders for flexible device applications requiring exceptional performance. The impact of defects within 2D materials on their optoelectronic response to strain is a significant factor to consider. In this context, we present an experimental study that sheds light on the role of intrinsic defects in monolayer MoS2 regarding the properties of strain-induced photoresponse. We observed an enhancement in photocurrent, electron mobility and the emergence of persistent photoconductivity in the presence of strain. Our findings suggest that the activation of defects at distinct strain values plays a pivotal role in augmenting the photoresponse of the material. The results also suggest defect migration in the presence of prolonged exposure to strain, which indicates a lowering of defect migration energy under strain. Our study unveils the significant role played by intrinsic defects in monolayer MoS2 in shaping the properties induced by strain. These findings not only deepen our understanding of the material but also open up exciting new possibilities for the development of multifunctional ultra-thin flexible devices in the next generation of applications.