Scalable Low Temperature Perovskite Epitaxy in Open Atomsphere

Epitaxial growth of single-crystalline oxides is one of the fundamental ways to integrate perovskite structures on semiconductors and other oxides, being very attractive for applications as well as fundamental studies, where the film uniformity is greatly enhanced in comparison to polycrystalline films with reduced grain boundaries, superior interfacial conductivity and integration with silicon. However, large-scale epitaxial implantation of complex oxides in consumer electronic devices remains a challenge. Epitaxial deposition techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD), require high-temperature and high vacuum systems, with a limited deposition area, which pose problems when during production. Other techniques, such chemical vapor deposition (CVD), can also be used to deposit complex oxides, but generally at growth or post-deposition annealing temperatures over 500°C to achieve epitaxy. Therefore, a thin-film growth technique with reduced complexity and less-energy-intensive conditions, giving epitaxial films in a short growth time is highly desired. Herein, we use an open atmospheric deposition technique, Spatial Atmospheric CVD, mimicking the film growth by PLD, to deposit highly crystalline, epitaxial binary oxide, on various single crystal substrates at 350°C, with similar electrical properties of PLD grown film. Thus, opening the possibility the low cost, large scale, high throughput of epitaxial devices commercially.