Tian Carey1,Adrees Arbab2,Luca Anzi3,Helen Bristow4,Fei Hui5,Sivasambu Bohm2,Gwenhivir Wyatt-Moon2,Andrew Flewitt2,Andrew Wadsworth4,Nicola Gasparini4,Jong Min Kim2,Mario Lanza6,Iain McCulloch4,Roman Sordan3,Felice Torrisi2
Trinity College Dublin1,Univeristy of Cambridge2,Politecnico di Milano3,Imperial College London4,Technion – Israel Institute of Technology5,KAUST6
Tian Carey1,Adrees Arbab2,Luca Anzi3,Helen Bristow4,Fei Hui5,Sivasambu Bohm2,Gwenhivir Wyatt-Moon2,Andrew Flewitt2,Andrew Wadsworth4,Nicola Gasparini4,Jong Min Kim2,Mario Lanza6,Iain McCulloch4,Roman Sordan3,Felice Torrisi2
Trinity College Dublin1,Univeristy of Cambridge2,Politecnico di Milano3,Imperial College London4,Technion – Israel Institute of Technology5,KAUST6
High-performance printable electronic inks with 2D materials have the potential to enable the next generation of high performance low-cost printed digital electronics. [1] The recent advances in flexible inkjet printed transistor heterostructures [2, 3] and complementary inverters achieving a voltage gain |<i>A</i><sub>v</sub>| ≈ 0.1 [2] using liquid phase exfoliation of 2D materials will be shown and their limitations discussed. We will show that by utilising electrochemical exfoliation of semiconducting 2D materials [4] such as molybdenum disulfide (MoS<sub>2</sub>) flake aspect ratios >100 and morphologically uniform inkjet printed transistor channels can be achieved. [5] We will demonstrate air-stable, low voltage (<5 V) operation of inkjet-printed n-type MoS<sub>2</sub>, and p-type indacenodithiophene-<i>co</i>-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time of τ<sub>MoS2</sub> ≈ 4.1 μs for the MoS<sub>2</sub> FETs. We then integrate MoS<sub>2</sub> and IDT-BT FETs to realize inkjet-printed complementary logic inverters with a voltage gain |<i>A</i><sub>v</sub>| ≈ 4 when in resistive load configuration and |<i>A</i><sub>v</sub>| ≈ 1.4 in complementary configuration. The results presented represent a key enabling step towards ubiquitous long-term stable, low-cost printed digital ICs.[5]<br/> <br/>[1] Torrisi, F. & Carey, T. Graphene, related two-dimensional crystals and hybrid systems for printed and wearable electronics. <i>Nano Today</i> <b>23</b>, 73-96 (2018).<br/>[2] Carey, T. <i>et al</i>. Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics. <i>Nature Communications</i> <b>8</b>, 1202 (2017).<br/>[3] Kelly, A.G. <i>et al.</i> All-printed thin-film transistors from networks of liquid-exfoliated nanosheets. <i>Science</i> <b>356</b>, 69-73 (2017).<br/>[4] Lin, Z. <i>et al.</i> Solution-processable 2D semiconductors for high-performance large-area electronics. <i>Nature</i> <b>562</b>, 254-258 (2018).<br/>[5] Carey, T. et al. Inkjet Printed Circuits with 2D Semiconductor Inks for High-Performance Electronics. <i>Advanced Electronic Materials</i> <b>7</b>, 2100112 (2021).