14 GHz Schottky Diodes Using Organic Semiconductors

The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes, hinder their deployment in emerging large-area radio frequency (RF) electronics. In this talk I will discuss how we have overcome these limitations by combining self-aligned asymmetric nanogap electrodes produced by adhesion-lithography, with a high mobility organic semiconductor and demonstrate RF Schottky diodes able to operate in the 5G frequency domain. Specifically, I will show how optimal device engineering combined with electronic doping of a high mobility polymer semiconductor yields Schottky diodes that exhibit maximum extrinsic cutoff frequencies (<i>f</i>_C) of &gt;10 GHz. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area radio frequency electronics of the future.