Yongjae Cho1
Yonsei University1
HAT-CN organic small molecules is used to shift threshold voltages of both n-MoS<sub>2</sub> field-effect transistor (FET) and p-MoTe<sub>2</sub> FET toward 0 V. It is attributed to the charge transfer between HAT-CN organic molecules layer and TMD channel. It is remarkable result because TMD based FETs have unwanted large threshold voltage. To demonstrate the applicable advantage of such effect, a complementary metal oxide semiconductor (CMOS) is built, and HAT-CN is deposited on the channels. Because V<sub>TH</sub> of both n-FET and p-FET in the CMOS are shifted towards 0 V, the performance of CMOS is greatly improved in aspect of voltage gain and power consumption