Donald Evans1,2,Theodor Secanell Holstad2,3,Aleksander Mosberg2,Didrik Småbråten2,4,Per Erik Vullum2,4,Anup Dadlani2,Konstantin Shapovalov5,Zewu Yan6,7,Edith Bourret7,David Gao2,Jaakko Akola2,Jan Torgersen2,Antonius T. J. van Helvoort2,Sverre Selbach2,Dennis Meier2
University of Augsburg1,Norwegian University of Science and Technology (NTNU)2,Technical University of Denmark (DTU)3,SINTEF4,Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)5,ETH Zurich6,Lawrence Berkeley National Laboratory7
Donald Evans1,2,Theodor Secanell Holstad2,3,Aleksander Mosberg2,Didrik Småbråten2,4,Per Erik Vullum2,4,Anup Dadlani2,Konstantin Shapovalov5,Zewu Yan6,7,Edith Bourret7,David Gao2,Jaakko Akola2,Jan Torgersen2,Antonius T. J. van Helvoort2,Sverre Selbach2,Dennis Meier2
University of Augsburg1,Norwegian University of Science and Technology (NTNU)2,Technical University of Denmark (DTU)3,SINTEF4,Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)5,ETH Zurich6,Lawrence Berkeley National Laboratory7
The control of conductivity is critical to any electronic device. In this context, oxide materials are particularly interesting as their conductivity can be continuously tuned via an electric field. In addition, they have a plethora of inherent functionalities arising from the electronic degrees of freedom, such as, superconductivity, magnetism, and ferroelectricity. However, utilizing both these changes in conductivity and electronic degrees of freedom simultaneously requires the ability to change one without affecting the other. Usually this is a problem, as the net redox reaction that gives the change in conductivity also affects the electronic degrees of freedom.<br/><br/>In this talk, I focus on how stable, nanoscale, enhancement of conductivity can be achieved in ferroelectrics without net mass transfer, net change in stoichiometry, or the build-up of spurious electric and chemical gradients. All of this is achieved by functionalizing charge neutral interstitial-vacancy pairs, so called "anti-Frenkel defects". This approach permits both the multiple orders of magnitude change in conductivity and the inherent functionality of oxides, such as those from domain walls, to be utilized independently and in parallel to each other: a key steppingstone to achieving all oxide domain wall devices.<br/><br/>Time permitting, I will go on to discuss the creation of structural dislocations (1D defects) with local electric fields and their effect on the relative conductivity.