Hyeonbeom Kim1,2,Seung Gyo Jeong1,Sung Ju Hong3,Dongseok Suh1,Woo Seok Choi1
Sungkyunkwan University1,Center for Integrated Nanotechnologies2,Kangwon National University3
Hyeonbeom Kim1,2,Seung Gyo Jeong1,Sung Ju Hong3,Dongseok Suh1,Woo Seok Choi1
Sungkyunkwan University1,Center for Integrated Nanotechnologies2,Kangwon National University3
Modulating bonding geometry of metal-oxide octahedral is a facile way of designing various functional properties. Several methods, stoichiometry control, epitaxial strain, and thickness have been proposed to modulate the rotation and tilt of octahedral. But these ways accompanied structural modifications such as changes in thin-film lattice parameters. In this work, we proposed concept of octahedral tilt engineering using atomically designed SrRuO<sub>3</sub>/SrTiO<sub>3</sub>.<br/>we fabricate atomically designed SrRuO<sub>3</sub>/SrTiO<sub>3</sub> superlattices. In particular, the six unit–cell thick SrRuO<sub>3</sub> layers within the superlattices undergo a phase transition from orthorhombic to tetragonal as the thickness of the SrTiO<sub>3</sub> layers is modulated with atomic–scale precision. Structure modulation via SrTiO<sub>3</sub> affects both magneto and vertical transport of SrRuO<sub>3</sub>/SrTiO<sub>3 </sub>heterostructure.<br/>The magnetic anisotropy, anomalous Hall conductance can be manipulated by structural phase change of SrRuO<sub>3</sub>. And SrTiO thickness dependent of vertical transport showed diode, resonant tunneling diode and resitive random access memory properties.<br/>Consequently, from the magneto and vertical transport of oxide superlattices, we explore the new possibility of new application on oxide films.