Christoph Kastl1,Elmar Mitterreiter1,Bruno Schuler2,Julian Klein3,Daniel Hernangómez-Pérez4,Sivan Refaely-Abramson4,Jonathan Finley1,Alexander Weber-Bargioni5,Alexander Holleitner1
Technical University of Munich1,Empa–Swiss Federal Laboratories for Materials Science and Technology2,Massachusetts Institute of Technology3,Weizmann Institute of Science4,Lawrence Berkeley National Laboratory5
Christoph Kastl1,Elmar Mitterreiter1,Bruno Schuler2,Julian Klein3,Daniel Hernangómez-Pérez4,Sivan Refaely-Abramson4,Jonathan Finley1,Alexander Weber-Bargioni5,Alexander Holleitner1
Technical University of Munich1,Empa–Swiss Federal Laboratories for Materials Science and Technology2,Massachusetts Institute of Technology3,Weizmann Institute of Science4,Lawrence Berkeley National Laboratory5
The microscopic understanding of defect-related modifications in 2D materials requires correlation between atomic structure and resulting macroscopic electronic, optical or excitonic properties. Combing controlled defect engineering with optical spectroscopy as well as atomic imaging and ab-initio theory, we identify the optical signature of pristine chalcogen vacancies in single layer MoS<sub>2</sub>. [1] Vacancies introduce a narrow optical emission, markedly different from previously observed broad luminescence bands. Comparing annealed vs. He-ion treated MoS<sub>2</sub>, we establish that the recently discovered single-photon emitters in He-ion irradiated MoS<sub>2</sub> originate from chalcogen vacancies. Using focused ion beam irradiation, the latter can be created site-selectively [2] with a spatial precision better than 10 nm [3], which is important for a prospective integration of defect-based single photon emitters into quantum photonic circuits.<br/>[1] E. Mitterreiter et al., Nat. Commun. 12, 3822 (2021).<br/>[2] J. Klein et al. ACS Photonics 8, 669-677 (2021).<br/>[3] E. Mitterreiter et al., Nano Lett. 20, 4437 (2020).