Young Hee Lee1,2
Sungkyunkwan University1,IBS Center for Integrated Nanostructure Physics2
Young Hee Lee1,2
Sungkyunkwan University1,IBS Center for Integrated Nanostructure Physics2
Seok Ho Choi,<sup>1,2</sup> Seok Joon Yun,<sup>1,2</sup> Ki Kang Kim<sup>1</sup><sup>,</sup><sup>2</sup> and<u> Young Hee Lee,</u><u><sup>1,2</sup></u><br/> <br/><i><sup>1</sup></i><i>Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea</i><br/><i><sup>2</sup></i><i>Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea</i><br/><i><u>
[email protected]</u></i><br/><b>Keywords:</b> crystal 2D material, chemical vapor deposition, Gr/hBN/TMD, heterostructure <br/> <br/>Since the discovery of graphene exfoliated from bulk graphite by scotch tape, numerous unprecedented physics phenomena cluding superconductivity, topological insulator, Weyl semimetal, etc. have been explored fundamentally. Yet, applications to, for example, electronics, soft electronics, optoelectronics, spintronics, and valleytronics have been hindered by the limited film sizes of a few micrometers. Furthermore, fundamental sciences and applications are often obscured from crystal film quality. In this talk, we will show some of the recent progresses on crystal growth of 2D layered materials. We will demonstrate some of the strategies of growing single-crystalline multilayer Gr that is stack-ordered, on Cu substrate, hBN, and transition metal dichalcogenides on Au substrate, and furthermore their in-plane and out-of-plane heterostructures in a wafer-scale. We will discuss several challenges to construct single crystal growth of 2D materials and heterostructures in a wafer-scale in terms of substrate, substrate orientation, vicinal surfaces, precursors, promotors etc.<br/> <br/>[1] V. L. Nguyen <i>et</i> <i>al.,</i> <i>Adv.</i> <i>Mat.</i>, <b>27</b> (2015) 1382.<br/>[2] V. L. Nguyen <i>et</i> <i>al.,</i> <i>Nature.</i> <i>Nano.</i>, <b>15 </b>(2020) 861.<br/>[3] J. S. Lee <i>et</i> <i>al.,</i> Science, <b>362 </b>(2018) 817.<br/>[4] S. H. Choi <i>et</i> <i>al.,</i> <i>Adv. Mat.,</i> <b>33</b>(2021) 2006601.