Dongwon Shin1,Hyeonbeom Kim1,Sung Ju Hong2,Sehwan Song3,Sungkyun Park3,Dongseok Suh1,Woo Seok Choi1
Sungkyunkwan University1,Kangwon University2,Pusan National University3
Dongwon Shin1,Hyeonbeom Kim1,Sung Ju Hong2,Sehwan Song3,Sungkyun Park3,Dongseok Suh1,Woo Seok Choi1
Sungkyunkwan University1,Kangwon University2,Pusan National University3
A heterostructure composed of 2D layered material (2DLM) and perovskite transition metal oxide possess great promise for next-generation hybrid material with synergetic physical and chemical properties [1]. For spintronics applications, for example, multifunctional devices with low power consumption and long-distance quantum spin transport might be realized using the hybrid structure. Particularly, the heterostructure let us imagine a gate-tunable magnetic 2DLM, in which the magnetization is induced by magnetic proximity effect. Using graphene as a 2DLM, we demonstrate that the graphene coupled to a ferromagnetic insulating layer of LaCoO<sub>3</sub> exhibit a systematic, controllable spin exchange splitting. The magnetic ground state of Dirac electrons in graphene with spin exchange splitting shift the quantum Hall plateau and Shubnikov-de Haas quantum oscillation in the gate field induced transport behavior. In addition, we directly presented the evidence of the spin splitting via the existence of two Fermi surfaces in graphene and derivation of finite spin splitting energy owing to the proximity effect of the ferromagnetic LaCoO<sub>3</sub>. The graphene/LaCoO<sub>3</sub> heterostructure with spin exchange splitting provides a unique opportunity for exploring functional spin behavior linked to the transport behavior, for next-generation of spin memory devices.<br/>[1] Kang <i>et al.</i>, <i>Adv. Mater.</i> <b>31</b>, 1803732 (2019)