Control of Degree of Structural Disorder in Amorphous Boron Nitride Film

As the size of the device decreases, the 'resistance and capacitance delay (RC delay)' determines the operating performance of the chip. In order to reduce the RC delay, it is necessary to reduce the dielectric constant of the material deposited between the metal electrodes in the downstream process of the integrated circuit. Existing low-κ Si-based materials have been studied to increase porosity so far. As a result, the dielectric constant is close to that of air, but its commercial use is limited due to the weakening of mechanical properties due to the high porosity.<br/>Recently, amorphous boron nitride (aBN) has been considered as a next-generation ultra-low-κ material [1]. In this presentation, we demonstrate the change in dielectric constant of aBN according to its degree of structural disorder. The dielectric constant of aBN increases as boron and nitrogen atoms have an ordered structure which appears with the formation of hBN nano-crystallites in the aBN thin film. Thus, we show changes in the degree of structural disorder and the dielectric constant of the aBN thin film when carbon element is doped into it.