Topological Metal Nanowires for Interconnect

Topological semimetals (TSMs) possess topologically protected surface states near the Fermi level with high carrier densities and high mobilities, holding distinct potential for low-dissipation on-chip interconnects that may outperform current copper interconnects for continued dimensional scaling of CMOS technologies. To explore the feasibility of nanoscale interconnects using TSMs, synthesis of TSMs with controlled dimensions, structural characterization, and transport properties at the nanoscale are essential. Here, we report synthesis of various TSM nanowires (MoP₂, CoSi, FeGe) with controlled dimensions and crystallinity by chemical vapor deposition and nanomolding. The demonstration of nanostructured TSM nanowires provides opportunities for careful investigations of design rules for TSMs-based nanoscale interconnects.