MRS Meetings and Events

 

SF05.10.05 2022 MRS Fall Meeting

Characterizing and Exploiting Topological and Point Defects in Ferroelectric Thin Films—Optimizing Electromechanical Response and Investigating Energy Landscapes with Automated Experiments

When and Where

Dec 1, 2022
3:45pm - 4:15pm

Sheraton, 3rd Floor, Gardner A/B

Presenter

Co-Author(s)

Rama Vasudevan1,Kyle Kelley1,A. Borisevich1,A.N. Morozvska2,V. Sharma3,J.C. Yang4,Panchapakesan Ganesh1,Stephen Jesse1,Sergei Kalinin3

Oak Ridge National Laboratory1,National Academy of Sciences of Ukraine2,The University of Tennessee, Knoxville3,National Cheng Kung University4

Abstract

Rama Vasudevan1,Kyle Kelley1,A. Borisevich1,A.N. Morozvska2,V. Sharma3,J.C. Yang4,Panchapakesan Ganesh1,Stephen Jesse1,Sergei Kalinin3

Oak Ridge National Laboratory1,National Academy of Sciences of Ukraine2,The University of Tennessee, Knoxville3,National Cheng Kung University4
The static and dynamic properties of ferroelectric thin films are heavily impacted by the presence and distribution of both point- and topological defects. Harnessing and controlling these factors has been critical to improving the dielectric and electromechanical properties of ferroelectric thin films [1,2]. However, many of the mechanisms that associate functional properties with changes to material properties are still difficult to pinpoint, and their effects at the nanoscale are still poorly understood in many cases [3].<br/> <br/>In this talk, we will discuss our work on studying and characterizing both point- and topological defects in ferroelectric thin films. First, we explore the ability to dynamically modify the electromechanical response of defective BaTiO<sub>3</sub> thin films [4], via injection of vacancies in ultra-high vacuum environments by the scanning probe tip. Multiple lines of evidence from detailed piezoresponse force spectroscopy and atomic resolution imaging via scanning transmission electron microscopy are used to measure the local structure and functionality of these films. A strong environmental dependence on the local dynamics is found on the piezoresponse as a function of field cycling. These measurements are corroborated by thermodynamic, first-principles and reactive force field calculations, which point towards a mechanism of increased electromechanical response engendered by dynamic injection of vacancies in the scanning probe volume.<br/> <br/>At the same time, topological defects such as domain walls and vortices can also be critical to understanding and modifying the dielectric and piezoelectric properties of thin films [5]. We discuss a newly developed automated experiment framework that explores the interplay between grain boundaries, domain switching, and domain wall de-pinning, to attempt to quantitatively measure the impact of local domain structure and longer-range elastic fields on the dynamics of topological defects in a model PbTiO<sub>3</sub> thin film grain boundary. Preliminary reinforcement learning methodologies to optimize the domain wall geometries will be discussed. This work was supported by the Center for Nanophase Materials Sciences (CNMS), which is a US Department of Energy, office of Science User Facility at Oak Ridge National Laboratory.<br/> <b>References</b><br/>[1] N. Setter, et al. <i>Journal of applied physics</i> 100.5 (2006): 051606.<br/>[2] A. J. Bell, P. M. Shepley and Y. Li. <i>Acta Materialia</i> 195 (2020): 292-303.<br/>[3] R. K. Vasudevan et al.<i> Advanced Functional Materials</i> 23.1 (2013): 81-90.<br/>[4] K. P. Kelley et al. <i>Advanced Materials</i> 34.2 (2022): 2106426.<br/>[5] G. F. Nataf et al <i>Nature Reviews Physics</i> 2.11 (2020): 634-648.

Symposium Organizers

Yuanyuan Zhou, Hong Kong Baptist University
Carmela Aruta, National Research Council
Panchapakesan Ganesh, Oak Ridge National Laboratory
Hua Zhou, Argonne National Laboratory

Publishing Alliance

MRS publishes with Springer Nature