Memrisitive Behavior of Li Intercalated MoTe₂ for Neuromorphic Computing

Recently, memristor has emerged as an electronic neuromorphic device with an ability to control multiple resistance states by memorizing the history of prior electrical input and mimicking the synapse for neuromorphic computing. Molybdenum ditelluride (MoTe₂) has attracted considerable interest among 2D transition metal dichalcogenides (TMDs) materials, because of its small band gap, tunable 1T′/2H phases, and favorable polycrystalline nature for ion migration. Herein, for the first time, we report lithium (Li) intercalated MoTe₂ neuromorphic device fabricated by a simple sputtering process exhibiting enhanced memristive behavior with varying Li ion concentration at different bias voltages<b>. </b>It is observed that MoTe₂ film effectively enhances the <i>I_on/I_off</i> and hysteresis current, which is attributed to high ion transport through the grain boundaries in polycrystalline MoTe₂. After ion-intercalation, <i>I_on/I_off</i> ratio was enhanced from 5 to &gt;10³ at lower sweep voltage with high retention and linearity conductance modulation for pulsative voltage. This work presents insights in making stable and large-scale MoTe₂ memristive device based on sputtered MoTe₂and ion intercalation method. In this presentation, we will discuss the device performance and its mechanistic investigation.