Self-Organized Lateral Polymorphic Regrowth in Ion Irradiated Gallium Oxide

Gallium oxide is an ultra-wide bandgap semiconductor exhibiting a number of unique properties and promising applications for power electronics and optoelectronics. Importantly, galium oxide can be crystallized in a range of different polymorphs having different structures and, consequently, different physical properties, which can be potentially exploited in the devices. However, gaining control over the polymorphic transitions in a technologically viable way is a challenge. Very recently, a novel method to form such polymorph films was discovered, specifically applying paradoxical idea of the disorder-induced ordering in ion beam irradiated samples [1]. The present talk reviews the data from Ref [1] and extends the description with not yet published data. In particular, including a spectacular ex-situ and in-situ observations of the lateral solid state polymorph regrowth at the interfaces between different polymorphs as well as reporting on the functionalities of the gallium oxide polymorph films and interfaces. Altogether, these novel data pave the way for a new synthesis technology of the metastable polymorph heterostructures and regularly shaped interfaces in device components not atchivable by conventional deposition methods.<br/><b>References </b><br/>[1] A. Azarov, C. Bazioti, V. Venkatachalapathy, P. Vajeeston, E. Monakhov, and A. Kuznetsov, <i>Phys</i><i>. </i><i>Rev. Lett.</i> 128 (2022) 015704