Solution-Processed Tellurium Nanowire Network Structure for Highly Sensitive P-Type Field-Effect Phototransistors Array

Low-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low- temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm²/Vs, an<br/>on/off current ratio of 1 × 10⁴, and a maximum transconductance of 2.18 μS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Tenanonet- based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.