100% Yield, 4-Inch Wafer-Scale Non-Volatile Optically-Guided Organic-Inorganic Heterostructure Memory Array with Simultaneous Detection and Storage of Text Image

Photoreactive optically-guided memory allows photodetector and memory functions to be combined in a single device. Accordingly, the above-mentioned memory device reduces unnecessary signal delay by reducing the metal wiring between the photodetector and the memory device, and the detection and storage functions of two different devices can be available with one device, thereby reducing the overall system size [1-2]. Due to these advantages, an optically-guided memory is considered significantly promising as a potential thin-film transistor memory for next-generation applications, where image sensing and processing capabilities are simultaneously required. In this light, this talk presents an organic/inorganic heterogeneously stacked optically-guided memory. In the proposed memory devices, the number of electrons formed in the channel layer is modulated by the intensity of incident light, and thereby the excited electron/hole pairs change the degree of electron carriers trapped in the floating gate. Based on the proposed heterogeneous memory structure, this work also implements a 4-inch wafer-scale 12 × 12 memory transistor array consisting of 144 devices enabling image detection with 100% yield. This study also demonstrates a text image detection with non-volatile memory characteristics depending on the presence or absence of light irradiation during the programming operation.<br/><br/><br/><b>References</b><br/><br/>1. Hong, Seongin, et al. "Multifunctional molybdenum disulfide flash memory using a PEDOT: PSS floating gate." NPG Asia Materials 13.1 (2021): 1-11.<br/>2. Yang, Wei-Chen, et al. "Comprehensive non-volatile photo-programming transistor memory via a dual-functional perovskite-based floating gate." ACS Applied Materials & Interfaces 13.17 (2021): 20417-20426.