Remote Epitaxy for Freestanding GaN Membrane on Wafer-Scale 2D Materials

Along with the rapid development of industries including communication, military, aviation, automobile, and high electric power, the demand for semiconductor technology is skyrocketing. In particular, GaN and SiC-based compound semiconductors for cutting edge optical and power devices are receiving highlights as the next-generation semiconductors that can change the world. The compound semiconductors are already being actively applied in the industries.<br/>The principle of “Remote epitaxy” technology has been recently discovered. Researchers in the various fields relevant to epitaxy have begun to pay attention to the new scientific discoveries. Remote epitaxy, developed for the epitaxy of high-quality compound semiconductor materials, is realized by the unique surface and physical characteristics of several two-dimensional (2D) materials. Remote epitaxy is different from the existing epitaxy technology in way that it can produce freestanding membranes due to the easy separation and transfer from the substrate. We have demonstrated the feasibility of this technology over the past several years as well as developed scientific knowledge on the fabrication of various high-quality compound semiconductor materials.<br/>In this study, remote epitaxy for the fabrication of freestanding, high-quality single crystalline GaN membrane is introduced. The manufacturing process of optimized 2D materials from various epitaxy processes is introduced and their characteristics are analyzed in detail. The development of defect-free 2D materials by remote epitaxy enabled the fabrication of high-quality single crystalline membrane at wafer scale.