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2011 MRS Fall Meeting & Exhibit

November 28-December 2, 2011 | Boston

Meeting Chairs: Cammy R. Abernathy, Paul V. Braun, Masashi Kawsaki, Kathyn J. Wahl

Symposium O : Compound Semiconductors for Generating, Emitting, and Manipulating Energy

2011-11-29   Show All Abstracts

Symposium Organizers

Tingkai Li Hunan Gongchuang Photovoltaic Science & Technology Co., Ltd.
Michael Mastro U.S. Naval Research Laboratory
Armin Dadgar Otto-von-Guericke-Universitaet Magdeburg
Hongxing Jiang Texas Tech University
Jihyun Kim Korea University
O1: III-Nitride LEDs
Session Chairs
Tingkai Li
Tuesday AM, November 29, 2011
Room 304 (Hynes)

9:00 AM - O1.1
Absence of Electron Accumulation at the InN(11-20) Cleavage Surfaces.

Holger Eisele 1 , Sarah Schaafhausen 2 , Andrea Lenz 1 , Aizhan Sabitova 2 , Lena Ivanova 1 , Mario Daehne 1 , Y. Hong 3 , Shangjr Gwo 3 , Philipp Ebert 2
1 Institut für Festkörperphysik, Technische Universität Berlin, Berlin Germany, 2 Peter Grünberg Institut, Forschungszentrum Jülich, Jülich Germany, 3 Department of Physics, National Tsing Hua University, Hsinchu Taiwan

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9:15 AM - O1.2
Visible-Color-Tunable Light-Emitting Diodes.

Young Joon Hong 2 3 1 , Chul-Ho Lee 2 3 , Gyu-Chul Yi 3 , Aram Yoon 4 , Miyoung Kim 4 , Han-Kyu Seong 5 , Hun Jae Chung 5 , Cheolsoo Sone 5 , Yong Jo Park 5
2 Mateirals Science and Engineering, Pohang University of Science and Technology, Pohang Korea (the Republic of), 3 Physics and Astronomy, Seoul National University, Seoul Korea (the Republic of), 1 Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo Japan, 4 Materials Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 5 , Samsung LED Co. Ltd., Suwon Korea (the Republic of)

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9:30 AM - O1.3
First Demonstration of InGaN/GaN Based Blue Light Emitting Diodes Grown on 8-Inch Diameter Si (111) Substrates.

Jun-Youn Kim 1 , Hyun-Gi Hong 1 , Yeonhee Kim 1 , Suhee Chae 1 , Youngjo Tak 1 , Jae Kyun Kim 1 , Jae Won Lee 1 , Hyoji Choi 1 , Junghun Park 1 , Bokki Min 1 , Bokki Min 1 , Youngsoo Park 1 , U-In Chung 1
1 , Samsung electronic company, Yongin Korea (the Republic of)

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9:45 AM - O1.4
High-Performance Semipolar (20-2-1) InGaN/GaN Light-Emitting Diodes.

Yuji Zhao 1 , Shinichi Tanaka 2 , Chih-Chien Pan 2 , Chia-Yen Huang 2 , Kenji Fujito 3 , Daniel Feezell 2 , James Speck 2 , Steven DenBaars 1 2 , Shuji Nakamura 1 2
1 ECE, University of California, Santa Barbara, Santa Barbara, California, United States, 2 Materials, University of California, Santa Barbara, Santa Barbara, California, United States, 3 Optoelectronics Laboratory, Mitsubishi Chemical Corporation, Ushiku, Ibaraki, Japan

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10:00 AM - O1.5
Incorporation of Colloidal Metallic Nanocrystals into InGaN/GaN MQWs: Bringing Together Top-down and Bottom-up Approaches in Order to Enhance Light Emission.

Sergio Pereira 1 , M. Martins 1 , T. Trindade 1 , A. Llopis 2 , Arup Neogi 2 , A. Krokhin 2 , Ian Watson 3
1 Physics and Chemistry/CICECO, University of Aveiro, Aveiro Portugal, 2 Physics, University of North Texas, Denton, Texas, United States, 3 Institute of Photonics, University of Strathclyde, Glasgow United Kingdom

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10:15 AM - **O1.6
Reducing the Cost of Ownership: MOCVD Advances for GaN LED’s and AsP CPV Technologies.

Eric Armour 1
1 Turbodisc Division, Veeco Instruments, Somerset, New Jersey, United States

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10:45 AM - *
Break

11:15 AM - O1.7
A Defect-Based Mechanism for Efficiency Droop in Nitride Light Emitting Diodes.

N. Modine 1 , A. Armstrong 1 , M. Crawford 1 , W. Chow 1
1 , Sandia National Laboratories, Albuquerque, New Mexico, United States

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11:30 AM - O1.8
Optimization of the Optical and Electrical Properties of GaN Vertical Light Emitting Diode with Current Block Layer.

Na Lu 1 , Zhiqiang Liu 3 2 , Enqing Guo 2 , Liancheng Wang 2 , Andrew Melton 3 , Ian Ferguson 3
1 Engineering Technology , University of North Carolina at Charlotte, Charlotte , North Carolina, United States, 3 , Chinese Academy of Science , Beijing China, 2 Electrical and Computing Engineering , University of North Carolina at Charlotte , Charlotte , North Carolina, United States

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11:45 AM - O1.9
Fabrication of Large-Area Graphene-Based Transparent Conductive Electrode for UV LEDs.

Byung-Jae Kim 1 , Chongmin Lee 1 , Younghun Jung 1 , Jihyun Kim 1
1 Deprtment of Chemical and Biological Engineering, Korea University, Seoul Korea (the Republic of)

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