1998 MRS Fall Meeting & Exhibit

* Invited paper

TUTORIAL 

FTO: FERROELECTRIC THIN FILMS 
Sunday, November 29, 8:30 a.m.-5:00 p.m. 
Salons H/I (Marriott) 

is a rapid rise in the extent of R&D activities leading to the integration of ferroelectric thin films in commercial devices. This tutorial covers the following topics:

• Introduction to material types, ferroelectric films, and a brief history of the field.
• Applications of ferroelectric films, including recent commercial developments and materials science issues. The section will be divided into the following categories:

• Ferroelectric nonvolatile memories
• Ferroelectric films for DRAMs and other capacitor applications
• Ferroelectric films for optical applications
• Piezoelectric and pyroelectric applications
• Miscellaneous applications

• Processing: summary of deposition methods and issues
• Integration issues - using nonvolatile memories and DRAMs as examples
• Outlook

Instructors: 
Angus I. Kingon, North Carolina State University 
Seshu B. Desu, Virginia Polytechnic and State University 

SESSION O1: BST AND DRAM 
Chairs: Robert E. Jones and Stephen K. Streiffer 
Monday Morning, November 30, 1998 
Salon H/I (M)

8:30 AM *O1.1 
A REVIEW OF (Ba,Sr)TiO₃ DEIELCTRICS FOR DRAM CAPACITORS. David E. Kotecki, IBM Microelectronics Division, Hopewell Junction, NY. 

9:00 AM O1.2 
CONDUCTION MECHANISMS IN THIN BARIUM STRONTIUM TITANATE FILMS. Sufi Zafar, Robert E. Jones, D. Gentile, B. Hradsky, Bo Jiang, V. Kaushik, Bruce White, and Sherry Gillespie, Materials Research and Strategic Technologies, Motorola, Austin, TX . 

9:15 AM O1.3 
THE EFFECT OF STRESS ON THE DIELECTRIC PROPERTIES OF BARIUM STRONTIUM TITANATE THIN FILMS. T.M. Shaw, E. Liniger, R.B. Laibowitz, IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY; Z. Suo, M. Huang, Princeton University, Princeton, NJ; D.E. Kotecki, IBM Microelectronics Division, Hopewell Junction, NY; H. Shen, Siemens Microelctronics Incorporated, Hopewell Junction, NY. 

9:30 AM *O1.4 
CHEMICAL VAPOR DEPOSITION TECHNOLOGY OF (Ba,Sr)TiO₃ THIN FILMS FOR GBIT-SCALE DYNAMIC RANDOM ACCESS MEMORIES. Tsuyoshi Horikawa, Masayoshi Tarutani, Takaaki Kawahara, Mikio Yamamuka, Takehiko Sato, Shigeru Matsuno, Fusaoki Uchikawa and Kouichi Ono, Mitsubishi Electric Corp., Advanced Technology R&D Center, Amagasaki, JAPAN. 

10:00 AM BREAK 

10:30 AM *O1.5 
BARIUM STRONTIUM TITANATE FOR EMBEDDED DRAM. Peter Zurcher, Peir Y. Chu, Prasad Alluri, Bo Jiang, Robert E. Jones, Jr., Matthew Kim, Bradley M. Melnick, Mark V. Raymond, Douglas Roberts, Tom P. Remmel, Clarence J. Tracy, Tse-Lun Tsai, Bruce E. White, Jr., Sufi Zafar, and Sherry J. Gillespie, Motorola, Materials Research and Strategic Technologies, Austin, TX, and Tempe, AZ. 

11:00 AM O1.6 
NON-LINEAR DIELECTRIC RELAXATION OF AS DEPOSITED AND DOPED POLYCRYSTALLINE (Ba,Sr)TiO₃ THIN FILMS OVER THE TEMPERATURE RANGE OF 4.2 - 496 K. J.D. Baniecki, IBM, Yorktown Hts., NY and Columbia Univ., New York, NY; R.B. Laibowitz, T.M. Shaw, P.R. Duncombe, D.E Kotecki, IBM, Yorktown Hts., NY; H. Shen, Siemens Components Inc., Hopewell Jct., NY; Q.Y. Ma, Columbia Univ., New York, NY. 

11:15 AM O1.7 
POINT DEFECT EQUILIBRIUM IN STRONTIUM TITANATE THIN FILMS. Paul C. McIntyre, Stanford Univ., Dept. of Materials Science and Engineering, Stanford, CA. 

11:30 AM O1.8 
SURFACE ROUGHNESS AND GROWTH TEXTURE OF (Ba,Sr)TiO₃ THIN FILMS FORMED BY MOCVD. Yufei Gao¹ Prasad Alluri², Mark Engelhard¹, Bradley Melnick², and Robert L. Hance^2 1Pacific Northwest National Laboratory, Richland, WA; ² Materials Research & Strategic Technologies, Motorola Inc., Austin, TX. 

11:45 AM O1.9 
EFFECT OF ATMOSPHERIC WATER VAPOUR ON THE TEMPERATURE DEPENDENCE OF CAPACITANCE IN THIN FILM BSTO CAPACITORS. D. O'Neill, J. M. Gregg, Queen's University of Belfast, Dept. Pure and Applied Physics, Belfast, N. IRELAND. 

SESSION O2: INTEGRATION AND ELECTRODES 
Chairs: Paul C. McIntyre and Scott R. Summerfelt 
Monday Afternoon, November 30, 1998 
Salon H/I (M)

1:30 PM O2.1 
EFFECT OF HYDROGEN ON Pb(Zr,Ti)O₃ - BASED FERROELECTRIC CAPACITORS. S. Aggarwal, S.R. Perusse, C.W. Tipton, R. Ramesh, Department of Materials and Nuclear Engineering, University of Maryland, College Park, MD; D.B. Romero, V.B. Podobedov, A. Weber, Optical Technology Division, National Institute of Standards and Technology, Gaithersburg, MD. 

1:45 PM O2.2 
EFFECT OF THE CATALYTIC NATURE OF THE PLATINUM GROUP METALS ON ELECTRODE AND BARRIER STRUCTURES FOR (Ba,Sr)TiO₃ THIN FILM CAPACITORS. Mark Raymond, Bruce White, Sucharita Madhukar, Mike Kottke, Tom Remmel, Brad Melnick and Clarence Tracy, Materials Research and Strategic Technologies, Motorola, Austin, TX. 

2:00 PM O2.3 
DIELECTRIC PROPERTIES OF PULSED LASER DEPOSITED SrTiO₃ THIN FILMS. Anna Clark, Hong-Cheng Li, Weidong Si, and X.X. Xi, Pennsylvania State University, University Park, PA. 

2:15 PM O2.4 
LOW TEMPERATURE RECOVERY ANNEALING OF Pb(Zr,Ti)O₃ AFTER FORMATION OF ALUMINUM INTERCONNECTION AND PASSIVATION. Yoshikazu Fujimori, Takashi Nakamura, Akira Kamisawa, Process Technology Div. ULSI Research and Development Headquarters, ROHM Co., Ltd., Kyoto, JAPAN. 

2:30 PM O2.5 
INTERCONNECT-RELATED DEGRADATION OF PZT CAPACITOR FOR FeRAM. Sota Kobayashi, Kazushi Amanuma, Hiromitsu Hada, NEC Corporation, Silicon Systems Research Laboratories, Sagamihara, JAPAN. 

2:45 PM BREAK 

3:15 PM *O2.6 
ELECTRODES AND BARRIERS FOR INTEGRATION OF FERROELECTRIC THIN FILMS IN SEMICONDUCTOR DEVICES. Alfred Grill, IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY. 

3:45 PM O2.7 
SOL-GEL GROWTH OF HIGH QUALITY Pb(Zr_.30,Ti_.70)O₃ FILMS ON RuO₂ USING SEED LAYERS. G.J. Norga, D.J. Wouters, Laura Fè, T.A. Bartic, H.E. Maes, IMEC, Leuven, BELGIUM. 

4:00 PM O2.8 
MOCVD OF Ir FILM WITH IRIDIUM ACETYLACETONATES AND CARBONYL PRECURSORS. Y.-M. Sun, K. Smith, J. Endle, J. G. Ekerdt and J. M. White, The University of Texas at Austin, Science and Technology Center for Growth, Synthesis and Analysis of Electronic Materials, Austin, TX; R. L. Hance, Motorola, Materials Research & Strategic Technologies, Austin, TX. 

4:15 PM O2.9 
CHEMICAL VAPOR DEPOSITION OF Ru AS ELECTRODE OF (Ba,Sr)TiO₃ CAPACITOR FOR DRAM APPLICATION. Tomonori Aoyama, Masahiro Kiyotoshi, Soichi Yamazaki, Kazuhiro Eguchi, Toshiba Corp., Microelectronics Eng. Lab., Yokohama, JAPAN. 

4:30 PM O2.10 
EFFECT OF BOTTOM ELECTRODE SYSTEM ON FERROELECTRIC PROPERTIES OF SPUTTER DEPOSITED PZT CAPACITORS. Kwon Hong, Yong Sik Yu, and Shang Kyoo Lee, Semiconductor Research Division, Hyundai Electronics, Ichon, KOREA. 

4:45 PM O2.11 
DRY ETCHING OF PZT FILMS WITH HIGH DENSITY CF₄/Ar PLASMAS. Jun Hee Cho, Chanro Park, Chang Ju Choi, and Yeo Song Seol, Semiconductor Research Division, Hyundai Electronics Industries Co., Ltd. Ichon-si, KOREA. 

SESSION O3: POSTER SESSION: 
BST AND DRAM 
Chairs: Debra L. Kaiser and David E. Kotecki 
Monday Evening, November 30, 1998 
8:00 P.M. 
America Ballroom (W)

*O3.1 
RESISTANCE DEGRADATION IN THIN BARIUM STRONTIUM TITANATE FILMS. Sufi Zafar, Robert E. Jones, B. Hradsky, D. Gentile, T. Tsai, P. Zurcher and S. Gillespie, Materials Research and Strategic Technologies, Motorola, Austin, TX. 

O3.2 
STUDY OF FERROELECTRIC BEHAVIOR OF (Ba,Sr)TiO₃ THIN FILMS USING LaNiO₃ AS THE CONDUCTIVE ELECTRODE. A. Srivastava, D. Kumar, R.K. Singh, Department of Materials Science and Engineering, University of Florida, Gainesville, FL. 

O3.3 
STUDY OF RF-SPUTTERED BZT THIN FILMS FOR ULSI DRAM APPLICATION. Jian-Hung Lee, Tung-Sheng Chen, Venkatasubramani Balu, Jeong Han, Razak Mohommedali, Sundararaman, Chun-Hui Wong and Jack C. Lee, Microelectronics Research Center, University of Texas at Austin, Austin, TX. 

O3.4 
Abstract Withdrawn. 

SESSION O4: POSTER SESSION: 
ELECTRODES 
Chairs: Gerd J. Norga and Mark V. Raymond 
Monday Evening, November 30, 1998 
8:00 P.M. 
America Ballroom (W)

*O4.1 
STABILITY AND OXIDATION BEHAVIOR OF Ir THIN FILM ELECTRODES ON Si AND SiO₂. Katherine L. Saenger, Alfred Grill, and Thomas M. Shaw, IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY. 

*O4.2 
CHEMICAL VAPOR DEPOSITION OF IRIDIUM FILM FROM NEW PRECURSORS OF (-DIKETONATE)Ir(I) LEWIS BASE ADDUCTS. Chongying Xu, Thomas H. Baum, Advanced Delivery and Chemical Systems, Ltd., Danbury, CT. 

O4.3 
CHARACTERIZATION OF RuO₂ FILMS PREPARED BY RF REACTIVE MAGNETRON SPUTTERING. Li-jian Meng , Departamento de Fisica, Instituto Superior de Engenharia do Porto, Porto, PORTUGAL; M.P. dos Santos, Departamento de Fisica, Universidade do Minho, Braga, PORTUGAL. 

O4.4 
EPITAXIAL CONDUCTIVITY RuO₂ THIN FILMS GROWN ON MgO and LaAlO₃ BY MOCVD. P. Lu, S. He, F.X. Li, and Q.X. Jia^*, Department of Materials Science and Engineering, New Mexico Tech, Socorro, NM; ^*Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM. 

O4.5 
EFFECT OF CHARACTERISTICS OF SrRuO₃ BUFFER LAYER ON THE FERROELECTRIC PROPERTIES OF (Pb_1-xLa_x)(Zr_1-yTi_y)O₃THIN FILMS. Kuo-Shung Liu, Yu-Jen Chen and I-Nan Lin^a, Department of Materials Science and Engineering, ^aMaterials Science Center, National Tsing-Hua University, Hsinchu, TAIWAN. 

O4.6 
GROWTH, MICROSTRUCTURAL AND FERROELECTRIC PROPERTIES OF PZT FILMS ON MgO (100) SUBSTRATES PREPARED BY THE PULSED LASER DEPOSITION METHOD. Ashok Kumar and M.R. Alam. Advanced Thin Film Laboratory, Dept. of Electrical Engineering, University of South Alabama, Mobile, AL. 

O4.7 
EFFECTS OF SrRuO₃ ELECTRODES ON THE FERROELECTRIC PROPERTIES FOR MEMORY DEVICE APPLICATIONS. M.H. Rahman, Ashok Kumar and M. Shamsuzzoha^* Department of Electrical Engineering, University of South Alabama, Mobile, AL; ^*Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa, AL. 

O4.8 
DEFECT IDENTIFICATION IN (La,Sr)CoO ELECTRODES USING POSITRON ANNIHILATION SPECTROSCOPY. T. Friessnegg, Univ. of Maryland, College Park, MD; B. Nielsen, V.J. Ghosh, A.R. Moodenbaugh, Brookhaven National Laboratory, Upton, NY; D.J. Keeble, Univ. of Dundee, SCOTLAND; S. Madhukar, S. Aggarwal, and R. Ramesh, Univ. of Maryland, College Park, MD; P. Mascher, McMaster University, Hamilton, CANADA; E.H. Poindexter, Army Research Laboratory, Adelphi, MD. 

O4.9 
ATOMIC-SCALE STRUCTURE AND PROPERTIES OF THIN EPITAXIAL SrRuO₃ FILMS GROWN ON SrTiO₃(100) BY PULSED LASER DEPOSITION. K. M. Satyalakshmi, N. D. Zakharov, D. Hesse, Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, Halle/Saale, GERMANY; G. Koren, Department of Physics, Technion - Israel Institute of Technology, Haifa, ISRAEL. 

O4.10 
THE PHASE TRANSITION OF Bi-Pt ALLOYS AT THE INTERFACE OF Pt/SrBi₂Ta₂O₉ AND ITS EFFECT ON INTERFACE ROUGHNESS. Dong Suk Shin^1,2, Ho Nyung Lee¹, Yong Tae Kim¹, and In Hoon Choi², ¹Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul, KOREA, ²Department of Materials Science and Engineering, Korea University, Seoul, KOREA. 

O4.11 
MODIFICATION OF Pb(Zr,Ti)O₃-FILMS ON HIGH-GRADE STEEL HASTELLOY BY ION IMPLANTATION. Ralph Klarmann, Wolfgang Biegel, Bernhard Woerz, Joachim Hemberger, Bernd Stritzker, University of Augsburg, Institute of Physics, Augsburg, GERMANY. 

O4.12 
DEPENDENCE OF FERROELECTRIC PROPERTIES OF SBT BASED CAPACITORS ON THE ELECTRODE MATERIAL. S. Tirumala, S.O. Ryu, K.B. Lee, R. Vedula, S.B. Desu, Virginia Polytechnic Institute and State University, Department of Materials Science and Engineering, Blacksburg, VA. 

O4.13 
EFFECTS OF STRESS RELAXATION OF EPITAXIAL SrRuO₃ THIN FILMS ON MICROSTRUCTURES. X.Q. Pan, J.C. Jiang, W. Tian, Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI; Q. Gan, R.A. Rao and C.B. Eom, Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC. 

O4.14 
ELECTRICAL PROPERTIES OF FERROELECTRIC PZT THIN FILM CAPACITORS WITH NOVEL (Pt, Ir) BASED ELECTRODE-BARRIERS FOR NONVOLATILE MEMORY APPLICATIONS. Chandra S. Desu, Ramakrishna Vedula, Kwang B. Lee and Seshu B. Desu, Virginia Tech, Blacksburg, VA. 

O4.15 
CHARACTERIZATION AND OXIDATION KINETICS OF REACTIVELY SPUTTERED TiAlN FILM. Yoshiki Ishizuka, Dong Joo Kim, Stephen K. Streiffer and Angus I. Kingon, North Carolina State Univ, Dept of Materials Science and Engineering, Raleigh, NC. 

O4.16 
SIMPLE ELECTRODE-BARRIER STRUCTURE USING Ir FOR INTEGRATION OF PZT-BASED HIGH-DENSITY NONVOLATILE MEMORIES. Kwang B. Lee, S. Tirumala, Y. Song, Sang. O. Ryu and Seshu B. Desu, Department of Materials Science and Engineering, Virginia Tech, Blacksburg, VA. 

O4.17 
INITIAL STAGE NUCLEATION AND GROWTH OF EPITAXIAL THIN FILMS OF CONDUCTIVE OXIDE SrRuO₃. R. Chae, Q. Gan, R.A. Rao, and C.B. Eom, Department of Mechanical Engineering & Materials Science, Duke University, Durham, NC. 

O4.18 
IN-SITU TEM STUDY OF STRUCTURAL PHASE TRANSITIONS OF EPITAXIAL SrRuO₃ THIN FILMS. J.C. Jiang and X.Q. Pan, Department of Materials Science & Engineering, The University of Michigan, Ann Arbor, MI. 

SESSION O5: POSTER SESSION: 
Bi-LAYERED FERROELECTRICS 
Chairs: Anil M. Dhote and James Lettieri 
Monday Evening, November 30, 1998 
8:00 P.M. 
America Ballroom (W)

O5.1 
ALL EPITAXIAL BaBi₄Ti₄O₁₅ - LaNiO₃ HETEROSTRUCTURE. K. M. Satyalakshmi, M. Alexe, A. Pignolet, S. Senz, S. Reichelt, D. Hesse and U. Gösele; Max-Planck-Institut für Mikrostrukturphysik, Halle/Saale, GERMANY. 

O5.2 
Abstract Withdrawn. 

O5.3 
INFLUENCE OF THE TITANIUM CATION IN THE PROPERTIES OF LSBN-SBT FERROELECTRIC FILMS OBTAINED BY PLD. Jorge Portelles, A. Fundora,J. M. Siqueiros, Centro De Ciencias De La Materia Condensada, Universidad Nacional Autonoma De Mexico, Ensenada, Baja California, MEXICO; H. Amorin, F, Guerrero, Facultad De Fisica, Universidad De La Habana, San Lazaro, CUBA; S. Aguilera, Facultad De Ciencias, Universidad Catolica Del Norte, Antofagasta, CHILE. 

O5.4 
FERROELECTRIC PROPERTIES OF SBT THIN FILMS FOR NON-VOLATILE MEMORY DEVICES AS A FUNCTION OF SUBSTRATE. Seung-Hyun Kim, D.J. Kim, S.K. Streiffer,and A.I. Kingon, Dept of Materials Science and Engineering, North Carolina State University, Raleigh, NC; J. Im,and A.R. Krauss, Materials Science and Chemistry Divisions, Argonne National Lab.; O. Auciello, Materials Science Division, Argonne National Lab., Argonne, IL. 

O5.5 
FERROELECTRIC PROPERTIES OF NEW CHEMICAL SOLUTION DERIVED SBT THIN FILMS FOR NON-VOLATILE MEMORY DEVICES. Seung-Hyun Kim, Dong-Joo Kim, KyuMann Lee, S.K. Streiffer, and A.I. Kingon, North Carolina State University, Dept of Materials Science and Engineering, Raleigh, NC. 

O5.6 
X-RAY PHOTOEMISSION SPECTROSCOPY MEASUREMENTS OF SrBi₂Ta₂O₉ AND Bi₄Ti₃O₁₂. B. H. Park, S.J. Hyun, S.D. Bu, T.W. Noh, Seoul National Univ, Dept of Physics, Seoul, KOREA; J. Lee, Sung Kyun Kwan Univ, Dept of Materials Engineering, Seoul, KOREA; H.-D. Kim, Univ of Seoul, Dept of Physics, Seoul, KOREA. 

O5.7 
PREPARATION AND FERROELECTRIC CHARACTERISTICS OF STRONTIUM BISMUTH TANTALATE BASED THIN FILMS. Chung-Shin Lu, Cheng-Yen Wen, and Yi-Chou Chen, National Taiwan Univ, Dept of Chemical Engineering, Taipei, TAIWAN) 

O5.8 
COMPOSITION DEPENDENCE OF DIELECTRIC ANOMALY FOR STRONTIUM BISMUTH TANTALATE THIN FILMS. Koichi Takemura, Takehiro Noguchi, Takashi Hase, Yoichi Miyasaka, NEC Corporation, Fundamental Research Laboratories, Kawasaki, JAPAN. 

O5.9 
EFFECTS OF GRAIN ORIENTATION ON FERROELECTRICITY OF LEAD BISMUTH TITANATE THIN FILMS PREPARED BY SOL-GEL PROCESS. Yong-il Park, Yoshiko Nakamura, Masaru Miyayama, and Tetsuichi Kudo, Dept of Applied Chemistry, University of Tokyo, Tokyo, JAPAN. 

O5.10 
STUDIES OF ELECTRICAL POLARIZATION FATIGUE IN SrBi₂Ta₂O₉ THIN FILMS. Kyu Mann Lee, D. Thomas, S.H. Kim, A.I. Kingon, and Hyun M. Jang^* Department of Materials Science and Engineering, North Carolina State University, Raleigh NC; ^*Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, SOUTH KOREA. 

O5.11 
CHARACTERISTICS AND GROWTH OF Sr-Ta OXIDE AND SrBi₂Ta₂O₉ THIN FILMS USING A NEW STRONTIUM AND TANTALUM ETHOXIDE (Sr[Ta(OEt)₆]₂) SOURCE. Dong Suk Shin^1,2, Yong Tae Kim¹, and In Hoon Choi², ¹Semiconductor Materials Laboratory, Korea Institute of Science and Technology, Seoul, KOREA, ²Department of Materials Science and Engineering, Korea University, Seoul, KOREA. 

O5.12 
MICRO-RAMAN STUDY OF SrBi₂Ta₂O₉ - Bi₃TiNbO₉ THIN-FILMS. W. Pérez, E Ching-Prado^*, P.S. Dobal, A. Reynés-Figueroa, R.S. Katiyar, T. Sridhar⁺, and S. B. Desu⁺ Department of Physics, University of Puerto Rico, San Juan, PUERTO RICO; ^*Department of Applied Physics, Technological University of Panamá, Tocumen, and CITEN-University of Panamá, PANAMÁ. ⁺Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, VA. 

O5.13 
SYNTHESIS AND DIELECTRIC PROPERTIES OF SrBi₂Nb₂O₉ LAYERED PEROVSKITE BY SOL-GEL PROCESSING. Yun Wu, Fumio Ohuchi, and G.Z. Cao, University of Washington, Department of Materials Science and Engineering, Seattle, WA. 

O5.14 
Abstract Withdrawn. 

SESSION O6: POSTER SESSION: 
Pb-BASED FERROELECTRICS 
Chairs: Steven J. Milne and Masaru Shimizu 
Monday Evening, November 30, 1998 
8:00 P.M. 
America Ballroom (W)

*O6.1 
CONTROL OF GRAIN SIZE OF Pb(Zr,Ti)O₃ THIN FILMS BY MOCVD AND THE EFFECT OF SIZE ON THE ELECTRICAL PROPERTIES. H. Fujisawa, S. Nakashima, M. Shimizu and H. Niu, Himeji Institute of Technology, Dept. of Electronics, Himeji, JAPAN. 

O6.2 
SYNTHESIS AND MICROSTRUCTURE CONTROL OF PZT FERROELECTRIC THIN FILMS AND NANOCRYSTALLINE POWDER BY A NOVEL SOL-GEL PROCESS. Dage Liu, Liancheng Zhao, Hongxi Zhang, Zhong Wang, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, P.R. CHINA. 

O6.3 
NOVEL PRECURSORS FOR MOCVD OF OXIDES CONTAINING ZIRCONIUM AND HAFNIUM. Kirsty A. Fleeting, David J. Otway, Paul O'Brien, Chemistry Department, Imperial College of Science, Technology and Medicine, London, UK; Anthony C. Jones, Inorgtech, Suffolk, UK. 

O6.4 
EFFECT OF STOICHIOMETRY ON THE FERROELECTRIC PROPERTIES OF (Pb_1-xLa_x)TiO₃ THIN FILMS. Hsiu-Fung Cheng, Department of Physics, National Taiwan Normal University, Taipei, TAIWAN; Cheng-Hsiung Lin, Yen-Hua Hsu and I-Nan Lin, Department of Material Science and Engineering, Material Science Center, National Tsing-Hua University, Hsinchu, TAIWAN. 

O6.5 
PROPERTIES AND ORIENTATION OF ANTIFERROELECTRIC LEAD ZIRCONATE THIN FILMS GROWN BY MOCVD. Nan Chen, G.R. Bai, O.H. Auciello, Materials Science Division; R.E. Koritala and M.T. Lanagan, Energy Technology Division, Argonne National Laboratory, Argonne, IL. 

O6.6 
HETEROEPITAXIAL GROWTH OF PZT FILM ON EPITAXIAL (100)Ir/(100)YSZ/(100)Si SUBSTRATE STRUCTURE PREPARED BY REACTIVE SPUTTERING. Susumu Horita, Sadayoshi Horii^*, Japan Advanced Inst of Science and Technology, School of Materials Science, Ishikawa, JAPAN. * Delegated from Kokusai Electric Co, Ltd, Toyama, JAPAN. 

O6.7 
LARGE-VOLUME HIGH-CONDUCTANCE FLASH EVAPORATION FOR LIQUID DELIVERY CVD SYSTEMS. G. Huebner and F. Gnadinger, COVA Technologies Inc., Colorado Springs, CO; and G.S. Tompa, Structured Materials Industries Inc, Piscataway, NJ. 

O6.8 
THE STRESS STATE AND DOMAIN STRUCTURE OF EPITAXIAL PbZr_0.20Ti_0.80O₃ FILMS ON SrTiO₃ SUBSTRATE WITH AND WITHOUT La_0.5Sr_0.5CoO₃ ELECTRODE LAYER. S.P. Alpay, N. Valanoor, S. Aggarwal, R. Ramesh, A.L. Roytburd, University of Maryland, Dept. of Materials and Nuclear Eng., College Park, MD. 

O6.9 
CRYSTALLIZATION KINETICS, TEXTURE AND FERROELECTRIC CHARACTERISTICS OF SOL-GEL PZT THIN FILMS. Vladimir Shur, Elena Blankova, Alexander Subbotin, Ekaterina Borisova, Inst. of Physics & Appl. Math., Ural State Univ., Ekaterinburg, RUSSIA; Dierk Bolten, Rainer Gerhardt and Rainer Waser, Inst. fuer Werkstoffe der Electrotechnik der Rhein.-Westf. Technichen Hochschule Aachen, Aachen, GERMANY. 

O6.10 
EFFECT OF Pb CONTENT ON THE FERROELECTRIC PROPERTIES OF PZT-BASED CAPACITORS. S. Aggarwal, S. Madhukar, B. Nagraj, T. Friessnegg, T.K. Song, H. Li, and R. Ramesh, Dept of Materials and Nuclear Engineering, University of Maryland, College Park, MD; R. Stroud, Naval Research Laboratory,Washington DC; J.T. Evans, Jr., Radiant Technologies, Albuquerque, NM. 

O6.11 
MICROSTRUCTURAL PROPERTIES OF EPITAXIAL PLZT THIN FILMS GROWN ON VARIOUS CUBIC SUBSTRATES BY PULSED LASER DEPOSITION. Kyeong Seok Lee and Sunggi Baik, Pohang Univ. of Science and Technology, Dept. of Materials Science and Metallurgical Engineering, Pohang, KOREA. 

O6.12 
THICKNESS DEPENDENCE OF STRUCTURAL AND ELECTRICAL PROPERTIES IN EPITAXIAL LEAD ZIRCONIUM TITANATE THIN FILMS. V.Nagarajan, S.P. Alpay, B. Nagaraj, T.K Song, S.Aggarwal, A.Roytburd and R.Ramesh, University of Maryland, Dept of Materials and Nuclear Engineering, College Park, MD. 

O6.13 
RHOMBOHEDRAL PZT BY CHEMICAL SOLUTION DEPOSITION : OBSERVATIONS REGARDING ORIENTATION AND FATIGUE. Joon Goo Hong, K.M. Lee, S.H. Kim, S.K. Streiffer, A.I. Kingon, Department of Materials Science and Engineering, North Carolina State University, Raleigh NC. 

O6.14 
X-RAY DIFFRACTION METHOD FOR DETERMINING TEXTURED VOLUME FRACTIONS IN PZT THIN FILMS. Glen R. Fox, Ramtron International Corporation, Colorado Springs, CO. 

O6.15 
Abstract Withdrawn. 

O6.16 
DOPANT EFFECTS IN SOL-GEL PZT BASED FERROELECTRIC MEMORIES: LANTHANUM VERSUS TANTALUM. Laura Fè, D.J. Wouters, G. Norga, T.A. Bartic, H.E. Maes, IMEC, Leuven, BELGIUM. 

O6.17 
LOW TEMPERATURE MOCVD OF THIN FILM PZT. Ing-Shin Chen and Jeffery F. Roeder, Advanced Technology Materials, Inc., Danbury, CT. 

O6.18 
DEPTH PROFILE STUDY OF FERROELECTRIC PLZT AND PZT THIN FILMS. Yiqun Li, S. Aggarwal, R. Ramesh and L.J. Martinez-Miranda, Dept of Materials and Nuclear Engineering, University of Maryland, College Park, MD. 

O6.19 
LOW TEMPERATURE PZT THIN FILMS GROWTH USING PTO SEEDING METHOD BY ADVANCED MOCVD. Toru Tatsumi, Kazushi Amanuma, NEC Co. Silicon Systems Research lab. Ibaraki, JAPAN. 

SESSION O7: Pb-BASED FERROELECTRICS 
Chairs: Robert W. Schwartz and Peter Zurcher 
Tuesday Morning, December 1, 1998 
Salon H/I (M)

8:30 AM *O7.1 
ULTRA-THIN PZT FILMS FOR LOW-VOLTAGE FERROELECTRIC NON-VOLATILE MEMORIES. Dirk Wouters, Gerd Norga, Herman Maes, IMEC, Leuven, BELGIUM. 

9:00 AM O7.2 
INFLUENCE OF THE DEPOSITION PARAMETERS CONTROLLED BY OPTICAL EMISSION SPECTROSCOPY ON PROPERTIES OF PZT THIN FILMS OBTAINED BY RF MAGNETRON SPUTTERING AND ¹⁸O TRACER DIFFUSION. Francisco Ayguavives, Buntha Ea-Kim, Pascal Aubert, Bernard Agius, Laboratoire Charles Fabry (IOTA), Groupe ``Physique des couches minces'', Centre Universitaire, Orsay, FRANCE; Ian Vickridge, Groupe de Physique des Solides, Université Paris VII et VI, Paris, FRANCE; Angus I. Kingon, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

9:15 AM O7.3 
FACTORS CONTROLLING THE PROPERTIES OF PZT FILMS FOR NONVOLATILE MEMORIES. Angus Kingon and Seung-Hyun Kim, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC. 

9:30 AM *O7.4 
THE ROLE OF PROCESSING PARAMETERS IN THE VARIATION OF MICROSTRUTURE OF SOL-GEL DERIVED LEAD ZIRCONATE TITANATE THIN FILMS. Chang Jung Kim, Tae-Young Kim, Ilsub Chung and In Kyung Yoo, Electronic Materials Lab., Materials and Device Sector, Samsung Advanced Institute of Technology, Suwon, KOREA. 

10:00 AM BREAK 

10:30 AM *O7.5 
DIOL AND RELATED SOL-GEL ROUTES FOR PREPARING PZT THIN FILMS V. Steven Milne, John Kennedy, Manoch Naksata, Durunee Kaewchinda, Rajnish Kurchania, Jinda Kemprasit, Nimit Sriprang, Dept of Materials and Dept of Chemistry, University of Leeds, Leeds. 

11:00 AM O7.6 
DEFECT PROPERTIES IN Pb(Nb,Zr,Ti)O₃ THIN FILMS. T. Friessnegg, S. Madhukar, Univ. of Maryland, College Park, MD; B. Nielsen, Brookhaven National Laboratory, Upton, NY; D.J. Keeble, Univ. of Dundee, SCOTLAND; S. Aggarwal and R. Ramesh, Univ. of Maryland, College Park, MD; E.H. Poindexter, Army Research Laboratory, Adelphi, MD. 

11:15 AM O7.7 
ROLE OF OXYGEN VACANCIES ON THERMALLY INDUCED IMPRINT BEHAVIOR OF PZT THIN FILMS. Seung-Hyun Kim, D.J. Kim, S.K. Streiffer, and A.I. Kingon, North Carolina State University, Dept of Materials Science and Engineering, Raleigh, NC. 

11:30 AM O7.8 
EFFECTS OF THE PURITY OF METALORGANIC SOURCES ON THE ELECTRICAL PROPERTIES OF Pb(Zr,Ti)O₃ THIN FILMS BY MOCVD. M.Shimizu, M.Yoshida, H.Fujisawa and H.Niu, Himeji Institute of Technology