Chairs
Sorin Cristoloveanu -- INP Grenoble
Roderick Devine -- France Telecom
Yoshio Homma -- Hitachi Ltd
Jerzy Kanicki -- Univ of Michigan
Masakiyo Matsumura -- Tokyo Inst of Technology
William Warren -- Sandia National Laboratories
Symposium Support
- NEC Corporation
- SOITEC USA, Inc.
* Invited paper
SESSION K1: THIN OXIDES
Monday Morning, December 2, 1996
Fairfax A (S)
8:30 AM *K1.1
GATE ELECTRODE EFFECT ON DIELECTRIC BREAKDOWN IN
, Akira Toriumi, Yuichiro Mitani, Toshiba Corp, ULSI Research Lab, Kawasaki, JAPAN; Hideki Satake, Toshiba Corp, USLI Researcher Lab, Kawasaki, JAPAN.
9:00 AM K1.2
POST-METALLIZATION ANNEALING OF ULTRA-THIN
REMOTE PLASMA ENHANCED CVD OXIDES.
, Lars-Ake Ragnarsson, Per Lundgren, Chalmers Univ of Technology, Dept of Solid State Electronics, Gothenburg, SWEDEN; Dolf Landheer, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.
9:15 AM K1.3
CHARACTERIZATION OF HYDROGEN-FREE
FILMS, Y. Uchida, S. Takei, Teikyo Univ of Science & Tech, Yamanashi, JAPAN; Masakiyo Matsumura, Tokyo Inst of Technology, Dept of Physical Electronics, Meguro-ku, Tokyo, JAPAN.
9:30 AM K1.4
COMPARISON OF GATE OXIDE PROCESSING TECHNIQUES FOR THIN DIELECTRIC FILMS, Pat Schay, Motorola Inc, Dept of ACT, Mesa, AZ; Mike Masquelier, Fuyu Lin, John Stih, Motorola Inc, ACT, Mesa, AZ.
9:45 AM BREAK
10:15 AM *K1.5
XPS STUDIES OF MODEL Si/SiO
INTERFACES, Mark M. Banaszak Holl, Kangzhan Zhang, Univ of Michigan, Dept of Chemistry, Ann Arbor, MI; F. R. McFeely, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.
10:45 AM *K1.6
X-RAY DIFFRACTION STUDIES OF THE
INTERFACE, K. W. Evans-Lutterodt, Martin L. Green, D. Brasen, K. Krisch, L. Manchanda, Bell Labs, Lucent Technologies, Murray Hill, NJ.
11:15 AM K1.7
SIMULATION OF STRUCTURE AND DYNAMICS OF AMORPHOUS SiO
, Yoshiaki Kogure, Masao Doyama, Teikyo Univ of Science & Tech, Dept of Materials, Yamanashi, JAPAN.
11:30 AM K1.8
SURFACE OXIDATION OF Si (111) BY HIGH-PURITY OZONE AND NEGATIVE OZONE IONS PRODUCED BY RYDBERG ELECTRON TRANSFER, Hidehiko Nonaka, Electrotechnical Laboratory, Dept of Matls Science, Ibaraki, JAPAN; Akira Kurokawa, Ken Nakamura, Shingo Ichimura, Electrotechnical Laboratory, Frontier Technology, Ibaraki, JAPAN.
11:45 AM K1.9
ELECTRON INJECTION INDUCED DEPASSIVATION OF H AND D TERMINATED
INTERFACES, Roderick A.B. Devine, France Telecom, CNET, Cedex, FRANCE; Karel Vanheusden, Sandia National Laboratories, Albuquerque, NM; William L. Warren, Sandia National Laboratories, Adv Materials Lab, Albuquerque, NM.
SESSION K2: SiON AND ORGANIC DIELECTRICS
Monday Afternoon, December 2, 1996
Fairfax A (S)
1:30 PM *K2.1
NITRIDED SILICON OXIDE GATE DIELECTRICS FOR SUBMICRON DEVICE TECHNOLOGY, Gerald Lucovsky, North Carolina State Univ, Dept of Physics, Raleigh, NC.
2:00 PM K2.2
IMPROVED RELIABILITY WITH A NEW PLASMA NH
PROCESS FOR 0.35
P
POLY-GATE NITRIDED OXIDE P-MOSFETS, Alain Bravaix, ISEM, Dept of Physics, Toulon, FRANCE; D. Vuillaume, IEMN-ISEN, CNRS, Villeneuve d'Ascq, FRANCE; D. Gogenheim,; M. Haond, V. Thirion, France Telecom, CNET, Meylan, FRANCE; A. Straboni.
2:15 PM K2.3
OPTIMIZATION OF PECVD SiN FILMS USING A STATISTICALLY DESIGNED EXPERIMENT, Steven K. Brierley, Thomas E. Kazior, Raytheon Corp, Advanced Device Center, Andover, MA; Lan Nguyen, Hewlett Packard Co, Optoelectronics Div, San Jose, CA.
2:30 PM K2.4
CHARACTERIZATION OF INSTABILITY IN HIGH-RATE DEPOSITED HYDROGENATED AMORPHOUS SILICON NITRIDE THIN FILMS, Tong Li, Chun-Ying Chen, Jerzy Kanicki, Univ of Michigan, Dept of EE&CS, Ann Arbor, MI; Charles I. Malone, Optical Imaging Systems, Inc., Northville , MI.
2:45 PM BREAK
3:15 PM *K2.5
ORGANIC INSULATING FILMS AT NANOMETER SCALE, D. Vuillaume, IEMN-ISEN, CNRS, Villeneuve d'Ascq, FRANCE.
3:45 PM K2.6
CONTROLLED INCORPORATION OF NITROGEN AT THE TOP SURFACE OF SILICON OXIDE GATE DELECTRICS, Hiro Niimi, Gerald Lucovsky, Kwnagok Koh, North Carolina State Univ, Dept of Physics, Raleigh, NC.
4:00 PM K2.7
MOLECULAR DYNAMICS STUDY OF Si/Si
N
INTERFACE, Martina E. Bachlechner, Louisiana State Univ, Dept of Physics & Astronomy, Baton Rouge, LA; Priya Vashishta, Louisiana State Univ, Concurrent Computing Lab for Matls Simulations, Baton Rouge, LA; Ingvar Ebbsjo, Univ of Uppsala, The Studsvik Neutron Res Lab, Nykoping, SWEDEN; Rajiv K. Kalia, Louisiana State Univ, Dept of Physics & Astronomy, Baton Rouge, LA.
4:15 PM K2.8
OXIDATION BEHAVIORS AND ELECTRICAL CHARACTERISTICS OF ULTRATHIN OXYNITRIDES GROWN BY
IN RTP SYSTEM, Yun-Jun Huh, LG Semicon Co Ltd, Process Group, Cheongiu, SOUTH KOREA; Nam-Hoon Cho, LG Semicon Co Ltd, Process Gr., Cheongiu, SOUTH KOREA; Jae-Woo Park, Chang-Jae Lee, LG Semicon Co Ltd, Process Group, Cheongiu, SOUTH KOREA; Jae-Sung Roh, LG Semicon Co Ltd, Process Gr., Cheongiu, SOUTH KOREA; Jae-Jeong Kim, LG Semicon Co Ltd, Adv Technology R&D Lab, Cheongju-si, SOUTH KOREA.
4:30 PM K2.9
PROPERTIS OF CAT-CVD SILICON NITRIDE FILMS AND ITSAPPLICATION AS PASSIVATION FILMS, Shinya Okada, JAIST, Dept of MS, Ishikawa, JAPAN; Hideki Matsumura, JAIST, Dept of Matls Science, Ishikawa, JAPAN.
4:45 PM K2.10
THE APPLICABILITY OF
FILM AS BOTTOM ANTIREFLECTIVE LAER IN DEEP ULTRAVIOLET LITHOGRAPHY, Byung-Hyuk Jun, Sang-Soo Han, KAIST, Dept of MS&E, Taejon, SOUTH KOREA; Dong-Wan Kim, Ho-Young Kang, Young-Bum Koh, Samsung Electronics Co Ltd, Semiconductor R/D Ctr, Yongin Kyungki-Do, KOREA; Byeong-Soo Bae, Kwangsoo No, KAIST, Dept of MS&E, Taejon, KOREA.
SESSION K3: POSTER SESSION:
DIELECTRICS
Monday Evening, December 2, 1996
8:00 P.M.
Grand Ballroom (S)
K3.1
GROWTH OF TRANSPARENT SiO
THIN FILM ON SILICON AT ROOM TEMPERATURE BY USING 172nm Xe2* EXCIMER LAMP, Takaomi Suzuki, Masataka Murahara, Tokai Univ, Dept of Electrical Engr, Hiratsuka, JAPAN.
K3.2
NUMERICAL SIMULATION OF HYDROGEN REDISTRIBUTION IN THIN
FILMS UNDER ELECTRON INJECTION IN HIGH FIELDS, Grigorii Gadiyak, Inst of Computational Technologies, Novosibirsk, RUSSIA.
K3.3
EFFECT OF ELECTRIC ARC PLASMA JET ANNEALING ON GATE OXIDE BREAKDOWN, George Ya. Pavlov, Scientific Industrial Concern, Scientific Center, Moscow, RUSSIA; Alexander N. Bourmistrov, Scientific Industrial Concern, Scientific Centre, Moscow, RUSSIA; Vladimir M Maslovsky, Zelenograd Research Inst of Phys Problems, Moscow, RUSSIA.
K3.4
PROPERTIES OF PLASMA OXYNITRIDE FILMS ON STRAINED SiGe, M Mukhopadhyay, Lakshmi Bera, Indian Inst of Technology, Dept of Electronics & ECE, Kharagpur, INDIA; Samit K. Ray, Univ of Texas-Austin, Microelectronics Research Ctr, Austin, TX; Chinmay Maiti, Indian Inst of Technology, Dept of Elecronics & ECE, West Bengal, INDIA.
K3.5
DEPOSITION OF SiO
N FILMS BY DC MAGNETRON SPUTTERING OF SILICON USING Ar/N
O/N
, Bertilo E. Kempf, Hans W. Dinges, Deutsche Telekom, FZ/FTZ, Darmstadt, GERMANY.
K3.6
CHARACTERIZATION OF a-SiNx THIN FILM DEPOSITED BY INDUCTIVELY COUPLED PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION, Sang-Soo Han, Byung-Hyuk Jun, Byeong-Soo Bae, Kwangsoo No, KAIST, Dept of MS&E, Taejon, KOREA.
K3.7
FRACTURE IN SILICON NITRIDE AND ALUMINA thin films: A MOLECULAR-DYNAMICS STUDY, Timothy J. Campbell, Louisiana State Univ, Concurrent Computing Lab for Matls Simulations
, Baton Rouge, LA; Priya Vashishta, Louisiana State Univ, Concurrent Computing Lab for Matls Simulations, Baton Rouge, LA; Rajiv K. Kalia, Louisiana State Univ, Dept of Physics & Astronomy, Baton Rouge, LA; Aiichiro Nakano, Louisiana State Univ, Concurrent Computing Lab for Matls Simulations
, Baton Rouge, LA.
K3.8
RAMAN AND FT-IR STUDY ON STRUCTURE AND ITS NITROGEN ALLOYS, Jun Xu, Nanjing Univ, Natl Lab of Solid State Microstructures, Nanjing, CHINA; Kunji Chen, Nanjing Univ, Dept of Physics, Nanjing, CHINA; Duan Feng, Nanjing Univ, Inst of Solid State Physics, Nanjing, CHINA; Seiichi Miyazaki, M. Hirose, Hiroshima Univ, Dept of Electrical Engr, Hiroshima, JAPAN.
K3.9
CHARACTERIZATION OF PECVD SiN FILMS BY SPECTROSCOPIC ELLIPSOMETRY, Steven K. Brierley, Raytheon Corp, Advanced Device Center, Andover, MA; Lan Nguyen, Hewlett Packard Co, Optoelectronics Div, San Jose, CA.
K3.10
PROCESSING OF SILICON OXYNITRIDES THIN FILMS BY THERMAL LPCVD STARTING FROM TEOS MIXTURES, Constantin Vahlas, CNRS, INPT ENSCT, Toulouse, FRANCE; Dimitris Dovazoglou, Vassilis Vamvakas, NCSR "Demokritos", Inst of Microelectronics, Aghi Paraskevi, GREECE.
K3.11
ELECTRONIC STRUCTURE OF Si-Si BOND IN
AND
: EXPERIMENT AND SIMULATION BY MINDO/3, Yu. N. Morokov, Inst of Computational Technologies, Novosibirsk, RUSSIA; V. A. Gritsenko, Yu. N. Novikov, Inst of Semiconductor Physics, Novosibirsk, RUSSIA; C. Y. Cheng, H. Wong, City Univ of Hong Kong, Dept of Electrical & Electronics Engr, Kowloon, HONG KONG.
K3.13
ATOMIC BONDING IN AMORPHOUS ALLOYS BASED ON CARBON, NITROGEN, AND HYDROGEN: A THERMODYNAMIC APPROACH, Haralabos Efstathiadis, Zinoviy L. Akkerman, Frederick W. Smith, City College of New York, Dept of Physics, New York, NY.
K3.14
ELECTRICAL PROPERTIES OF FLASH-EVAPORATED BaTiO
THIN FILMS ON Si
AND SiO
/Si., Jaime V. Caballero, Univ de Santiago, Dept de Fisica, Santiago, CHILE; Victor M Fuenzalida, Univ de Chile, Dept de Fisica, Sntiago, CHILE; Ricardo E. Avila, Com Chilena de Energia Nculear, Dept of Nuclear Materials, Santiago, CHILE; Ignaz Eisele, Univ de Bundeswehr, Dept of Physics at Electrical Engr, Neubiberg, Germany.
K3.15
FABRICATION AND CHARACTERIZATION OF BTO/PZT/BTO/Si HETEROSTRUCTURES FOR FERROELECTRIC FETS, Xingjiao Li, Zhao JianHong, An Chengwu, Yu Jun, Huazhong Univ of Science & Technology, Dept of Solid State Electronics, Wuhan, CHINA.
K3.16
CHARACTERIZATION OF PLZT ON RUTHENIUM ELECTODE FOR HIGH DENSITY FRAM APPLICATION, YongSoo Choi, SooDoo Choi, SeungHyun Kim, C. Kim, YonSei Univ, Dept of Ceramic Engr, Seoul, SOUTH KOREA; Doo Young Yang, North Carolina State Univ, Dept of MS&E, Raleigh, NC.
K3.18
EPITAXIAL GROWTH OF (100) ORIENTED MgO FILM ON Si (100) SUBSTRATE MOCVD AND ITS PHYSICAL PROPERTIES, Hong Wang, Shandong Univ, Inst of Crystal Materials, Jinan, CHINA; J. M. Zeng, Shandong Univ, Inst of Crystal Matls, Jinan, CHINA; S. X. Shang, Shandong Univ, Dept of Enviromnment Engr, Jinan, CHINA; M. Wang, Z. Wang, Shandong Univ, Inst of Crystal Materials, Jinan, CHINA.
K3.19
ASSEMBLY OF THIN FILM DIELECTRICS BY SEQUENTIAL ADSORPTION REACTION, Mingming Fang, Thomas E. Mallouk, Pennsylvania State Univ, Dept of Chemistry, University Park, PA; Anthony C. Sutorik, Univ of Michigan, Dept of MS&E, Ann Arbor, MI.
K3.20
THIN FILM DEPOSITION OF BARIUM STRONTIUM TITANATE (BST) BY PULSED LASER DEPOSITION (PLD) TECHNIQUE, Pradeep Jana, R. K. Pandey, Texas A&M Univ, Dept of Electrical Engr, College Station, TX.
K3.21
FERROELECTRIC PROPERTIES OF X-RAY PHOTOELECTRON SPECTROSCOPY OF
THIN LAYERS, Chae Ryong Cho, Univ of Illinois-Urbana, , Urbana, IL; M. Jang, Pusan National Univ, Dept of Physics, Pusan, SOUTH KOREA; S. I. Kwon, Seoul National Univ, Dept of Physics, Seoul, SOUTH KOREA; M. H. Frey, Univ of Illinois-Urbana, Beckman Inst, Urbana, IL; D. A. Payne, Univ of Illinois-Urbana, Urbana, IL.
K3.22
EFFECT OF REACTIVE NITROGEN GAS ON THE ELECTRICAL AND OPTICAL PROPERTIES OF RF-SPUTTERED AMORPHOUS CARBON FILMS, Kwang Bae Lee, Yong Woo Shin, Duck Jung Lee, Sangji Univ, Dept of Physics, Kangwondo, SOUTH KOREA.
K3.23
CHARACTERIZATION OF THE THIN DIAMOND-LIKE CARBON FILMS DEPOSITED USING
-PLASMA SOURCE, V. I. Polyakov, A. I. Rukovishnikov, N. M. Rossukanyi, A. V. Khomich, Inst of Radio Engr & Electronics , Dept of Microelectronics, Moscow, RUSSIA; B. L. Druz, Edward Ostan, A. Hages, Veeco Instruments.
K3.24
DIAMOND-LIKE CARBON FILM PROPERTIES FROM OPTICAL AND ELECTRICAL MEASUREMENTS, P. B. Kosel, Univ of Cincinnati, Dept of Electrical Engr, Cincinnati, OH; Aaron Dalton, Univ of Cincinnati, Dept Electrical Engr, Cincinnati, OH; Roberto Monreal, Univ of Cincinnati, Dept of Electrical Engr, Cincinnati, OH; Sandra Carr, Air Force Wright Laboratory, WL/POOC-1, Wright Patterson AFB, OH; P. E. Emmert, Alan Garscadden, Air Force Wright Laboratory, Wright Patterson AFB, OH; Richard L. C. Wu, K Systems Corp, Dept of Materials Engr, Beavercreek, OH.
K3.25
EUROPIUM DOPED
AS A MATERIAL SYSTEM FOR BLUE-VIOLET LIGHT EMITTING STRUCTURES ON SILICON, Tathagata Chatterjee, Univ of Oklahoma, School of Electrical Engr, Norman, OK; Cyril A. Michellon, Inst of Engineering Sciences, Dept of Engr Physics, Aubiere, FRANCE; Xiao Ming Fang, Patrick J. McCann, Univ of Oklahoma, School of Electrical Engr, Norman, OK.
K3.26
OPTICAL CHARACTERIZATION OF EUROPIUM-DOPED CALCIUM FLUORIDE THIN FILMS GROWN ON SILICON BY MOLECULAR BEAM EPITAXY, Xiao Ming Fang, Tathagata Chatterjee, Patrick J. McCann, Univ of Oklahoma, School of Electrical Engr, Norman, OK; Wing Kwan Liu, Michael B. Santos, Univ of Oklahoma, Dept of Physics & Astronomy, Norman, OK.
K3.27
CHEMICAL VAPOR DEPOSITION OF AMORPHOUS ALUMINUM OXIDE FILMS, Roy G. Gordon, Keith Kramer, Xinye Liu, Harvard Univ, Dept of Chemistry, Cambridge, MA.
K3.28
CHARACTERIZATION OF SPUTTERED ALUMINA FOR RECORDING-HEAD APPLICATIONS, Leo Asinovsky, Rudolph Technologies Inc, Flanders, NJ; Mark Feldman, Alcatel Comptech, San Jose, CA.
K3.29
Cr SELF PASSIVATION OF Cu GATES FOR a-Si THIN FILM TRANSISTORS, Henning Sirringhaus, Antoine Kahn, Sigurd Wagner, Princeton Univ, Dept of Electrical Engr, Princeton, NJ.
K3.30
BARIUM TITANATE FILMS AS A DIELECTRIC FOR CAPACITOR APPLICATIONS, Bang-Hung Tsao, K Systems Corp, Dayton, OH; Sandra Carr, Joseph A. Weimer, Air Force Wright Laboratory, WL/POOC-1, Wright Patterson AFB, OH.
K3.31
DOPED YTTRIUM IRON GARNET (YIG) THIN FILMS FOR INTEGRATED MAGNETO-OPTICAL APPLICATIONS, Bethanie J. H. Stadler, USAF Rome Laboratory, Optoelectronic Components Branch, Hanscom AFB, MA ; Yi-Qun Li, Mondher Cherif, NZ Applied Technologies, Woburn, MA; Joseph P. Lorenzo, USAF Rome Laboratory, Opto-electronic Components Branch, Hanscom AFB, MA.
K3.32
INVESTIGATION OF RELAXATION PROCESS IN TWO SIDE-CHAIN NONLINEAR OPTICAL POLYMER THIN FILM, Ram Katiyar, Z.-Y. Cheng, Univ of Puerto Rico, Dept of Physics, Rio Piedras, PR; S. Bauer, Heinrich-Hertz-Inst, Dept of Materials Technology, Berlin, GERMANY; S. Bauer-gogonea, Heinrich-Hertz-Inst, Dept of Matls Tech, Berlin, GERMANY.
K3.33
OPTICAL PROPERTIES OF BARIUM TITANATE THIN FILMS SYNTHESIZED BY METALORGANIC CHEMICAL VAPOR DEPOSITION , Bruce A. Block, Bruce W. Wessels, Michael J. Nystrom, Gregory M. Ford, Northwestern Univ, Dept of MS&E, Evanston, IL; Douglas M. Gill, Northwestern Univ, Dept of EE&CS, Evanston, IL; Seng-Tiong Ho, Northwestern Univ, Dept of Computer Science & Electrical Engr, Evanston, IL.
K3.34
EXAMINATION OF NEW PRECURSORS FOR THE MOCVD OF DIELECTRIC AND FERROELECTRIC THIN FILMS, Gautam Bhandari, Thomas H. Baum, Advanced Technology Materials Inc, Danbury, CT.
K3.35
THERMAL, OXIDATIVE AND HYDROLTIC STABILITY OF
MOCVD PRECURSORS, Timothy Glassman, Thomas H. Baum, S. Bilodeau, Ralph J. Carl, P. C. van Buskirk, Advanced Technology Materials Inc, Danbury, CT.
K3.36
DETECTION OF AMORPHOUS MATERIAL IN BARIUM STRONTIUM TITANATE THIN FILMS SYNTHESIZED BY MOCVD, D. L. Kaiser, NIST, Dept of MS&E, Gaithersburg, MD; M. D. Vaudin, L. H. Robins, J. T. Armstrong, NIST, Gaithersburg, MD.
K3.37
FABRICATION AND ELECTRICAL CHARACTERISTICS OF POLY-Si THIN-FILM TRANSISTORS USING VERY THIN SPUTTER DEPOSITED GATE SiO
FILMS, Kwang-Hyun Park, Hong-Ik Univ, Dept of ME&MS, Seoul, SOUTH KOREA; Tae-Hyuk Koh, Hong-Ik Univ, Dpet ME&MS, Seoul, SOUTH KOREA; Seung-Eui Nam, Hyoung-June Kim, Hong-Ik Univ, Dept of ME&MS, Seoul, SOUTH KOREA.
K3.38
LOW-TEMPERATURE LOW-STRESS SILICON NITRIDE FOR OPTOELECTRONIC APPLICATIONS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL-VAPOR DEPOSITION, Said Belkouch, Dolf Landheer, Rod Taylor, Krishnamurthy Rajesh, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.
SESSION K4: SOI (I)
Tuesday Morning, December 3, 1996
Fairfax A (S)
11:15 AM K4.1
CORRELATION OF ELECTRICAL AND PHYSICAL PROPERTIES OF SIMOX BOX EFFECTED BY VARIOUS IMPLANTATION PARAMETERS, Jung Yoon, Grace N. Kim, MIT, Dept of MS&E, Cambridge, MA; Jee-Hoon Y. Krska, MIT, Dept of EE&CS, Cambridge, MA; Lisa P. Allen, Ibis Technology Corp, Danvers, MA; James E. Chung, MIT, Dept of EE&CS, Cambridge, MA.
11:30 AM K4.2
OPTICAL CHARACTERIZATION OF SOI, Iris Bloomer, G. G. Li, A. R. Forouhi, n&k Technology Inc, Santa Clara, CA ; Andre-Jacques Auberton-Herve, Soitec SA, Grenoble, FRANCE; A. Wittkower, SOITEC USA, Inc., Peabody, MA.
SESSION K5: SOI (II)
Tuesday Afternoon, December 3, 1996
Fairfax A (S)
1:30 PM *K5.1
SMART-CUT TECHNOLOGY: APPLICATION TO SOI WAFER FABRICATION, Andre-Jacques Auberton-Herve, T. Barge, Soitec SA, Grenoble, FRANCE; M. Bruel, B. Aspar, CEA Grenoble, LETI-DMITEC, Grenoble, FRANCE.
2:00 PM K5.2
EFFECT OF DOSE VARIATION ON THE MICROSTRUCTURE IN SIMOX, Ranju Datta, Univ of Florida, Dept of MS&E, Gainesville, FL; Lisa P. Allen, Ibis Technology Corp, Danvers, MA; V. Krishnamoorthy, Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL.
2:15 PM K5.3
INFLUENCE OF NITROGEN OR ARGON ANNEALS ON THE PROPERTIES OF SIMOX WAFERS AND TRANSISTORS, Sorin Cristoloveanu, INP Grenoble, ENSERG, Grenoble, FRANCE; Stella Hong, Hank Shin, Tom Wetteroth, Syd Wilson, Motorola Inc, Materials Research & Strategic Technologies, Mesa, AZ; Pierre Gentil, Daniela Munteanu, INP Grenoble, ENSERG, Grenoble, FRANCE; Adrian Mihai Ionescu, LPCS/ENSERG, Grenoble, FRANCE.
2:30 PM K5.4
A NOVEL TECHNIQUE TO DIRECTLY PROBE H
KINETICS IN SiO
THIN FILMS, Karel Vanheusden, Sandia National Laboratories, Albuquerque, NM; William L. Warren, Sandia National Laboratories, Adv Materials Lab, Albuquerque, NM; D. M. Fleetwood, J. R. Schwank, P. S. Winokur, Sandia National Laboratories, Albuquerque, NM; Roderick A.B. Devine, France Telecom, CNET, Cedex, FRANCE.
2:45 PM K5.5
EFFECT OF POST-0XIDATION ON DISTRIBUTION OF NEUTRAL OXYGEN VACANCIES IN BURIED OXIDES, Kwang Soo Seol, Waseda Univ, Dept of Electrical Electronics & Computer Engr, Tokyo, JAPAN; Toshifumi Karasawa, Hidemi Koike, Waseda Univ, Dept of EE&CE, Tokyo, JAPAN; Yoshimichi Ohki, Waseda Univ, Dept Electrical Electronics & Computer Engr, Tokyo, JAPAN; Masaharu Tachimori, Nippon Steel Corporation, Adv Semiconductor Matls & Devices Lab, Yamaguchi , JAPAN.
3:00 PM BREAK
SESSION K6: SiO2 AND LOW K DIELECTRICS
Tuesday Afternoon, December 3, 1996
Fairfax A (S)
3:30 PM *K6.1
SIMULATION OF WIRING CAPACITANCE FOR SUB-QUARTER-MICRON ULSI DEVICES AND ITS APPLICATION, Toshiaki Hasegawa, Sony Corp, Dept of Semiconductors, Kanagawa, JAPAN; T. Kobayashi, S. Kadomura, J. Aoyama, Sony Corp, Semiconductor Co, Kanagawa, JAPAN.
4:00 PM K6.2
OBSERVATION OF FULL INTERFACE OF MULTI-LEVEL INTERCONNECTS FOR SUB-HALF MICRON DEVICES, Yukinori Hirose, Toshiharu Katayama, Mitsubishi Electric Corp, Evaluation & Analysis Center, Hyogo, JAPAN.
4:15 PM K6.3
MIXED RF FREQUENCY CVD OF SILICON OXIDE FOR MICROELECTRONICS APPLICATIONS, Wei W. Lee, Texas Instruments, Inc, SPDC, Dallas, TX; Q. He, Texas Instruments, Inc, Dallas, TX.
4:30 PM K6.4
POSITIVELY CHARGED OVER-COORDINATED OXYGEN CENTERS IN SiO
THIN FILMS, William L. Warren, Sandia National Laboratories, Adv Materials Lab, Albuquerque, NM; Karel Vanheusden, J. R. Schwank, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, Sandia National Laboratories, Albuquerque, NM; Roderick A.B. Devine, France Telecom, CNET, Cedex, FRANCE.
4:45 PM K6.5
A QUANTUM MECHANICAL INVESTIGATION OF RADIATION-INDUCED POSITIVE CHARGE DEFECTS IN
THIN FILM MOS DEVICES, Antonio M. Ferreira, USAF Phillips Laboratory, PL/VTE, Kirtland AFB, NM; Shashi P. Karna, USAF Phillips Laboratory, VTE, Kirtland AFB, NM; R. D. Pugh, C. P. Brothers, B. K. Singaraju, USAF Phillips Laboratory, VTE Space Electronics Div, Kirtland AFB, NM; William L. Warren, Sandia National Laboratories, Adv Materials Lab, Albuquerque, NM; Karel Vanheusden, Sandia National Laboratories, Albuquerque, NM; Roderick A.B. Devine, France Telecom, CNET, Cedex, FRANCE.
SESSION K7: HIGH K DIELECTRICS
Wednesday Morning, December 4, 1996
Fairfax A (S)
8:30 AM *K7.1
HIGH DIELECTRIC CONSTANT MATERIALS FOR DRAM, Scott Summerfelt, Texas Instruments, Inc, Dallas, TX.
9:00 AM K7.2
VERY THIN FILMS OF HIGH DIELECTRIC CONSTANT MATERIALS, David B. Beach, Mariappan Paranthaman, Oak Ridge National Laboratory, Dept of Chemical & Analytical Science, Oak Ridge, TN; Catherine E. Vallet, Oak Ridge National Laboratory, Chemical & Analytical Sciences Div, Oak Ridge, TN.
9:15 AM K7.3
FIELD, TEMPERATURE, AND THICKNESS DEPENDENCE OF THE DIELECTRIC BEHAVIOR OF CVD
THIN FILMS ON
, S. K. Streiffer, C. Basceri, A. I. Kingon, North Carolina State Univ, Dept of MS&E, Raleigh, NC; S. Bilodeau, R. Carl, P. C. van Buskirk, Advanced Technology Materials Inc, Danbury, CT.
9:30 AM K7.4
CHARACTERIZATION OF Ru THIN FILMS FOR THE HIGH-DENSITY DRAM CAPACITOR, Jae-Hyun Joo, Jeong-Min Seon, Yoo-Chan Jeon, Ki-Young Oh, Jae-Sung Rho, LG Semicon Co Ltd, Process Group, Cheongju, SOUTH KOREA; Jae-Jeong Kim, LG Semicon Co Ltd, Adv Technology R&D Lab, Cheongju-si, SOUTH KOREA; Jin-Tae Choi, LG Semicon Co Ltd, Advanced Analytical Group, Cheongjiu, SOUTH KOREA.
9:45 AM BREAK
10:15 AM *K7.5
TANTALUM PENTOXIDE FOR ADVANCED DRAM APPLICATIONS, N. P. Sandler, K. A. McKinley, Lam Research Corp, Fremont, CA.
10:45 AM K7.6
LIQUID SOURCE MOCVD OF
THIN FILMS FOR HIGH DENSITY DRAMS, Won-Jae Lee, Doo Young Yang, M. Vellaikal, R. R. Woolcott, S. K. Streiffer, A. I. Kingon, North Carolina State Univ, Dept of MS&E, Raleigh, NC.
11:00 AM K7.7
NOVEL MOCVD PROCESSES FOR NANOSCALE OXIDE THIN FILMS, Tingkai Li, Emcore Corp, Somerset, NJ; R. A. Stall, Emcore Corp, Emcore Research Lab, Somerset, NJ.
11:15 AM K7.8
FABRICATION OF STACKED CAPACITORS USING A MASKLESS PATTERNING PROCESS, Noo Li Jeon, Univ of Illinois-Urbana, Seitz Materials Research Lab, Urbana, IL; P. G. Clem, S. S. Sengupta, W. B. Lin, G. S. Girolami, D. A. Payne, Univ of Illinois-Urbana, Urbana, IL; Ralph G. Nuzzo, Univ of Illinois-Urbana, Dept of Chemistry, Urbana, IL.
11:30 AM K7.9
PREPARATION AND CHARACTERIZATION OF PZT THIN FILMS ON
MULTILAYERED ELECTRODE BY MOCVD, Tae-Young Kim, Daesig Kim, June Key Lee, Samsung Advanced Inst of Tech, Suwon, SOUTH KOREA.
11:45 AM K7.10
PREPARATION AND PHYSICAL PROPERTIES OF Bi
Ti
O
SINGLE CRYSTAL THIN FILM ON Si (100) SUBSTRATE BY MOCVD, Hong Wang, Shandong Univ, Inst of Crystal Materials, Jinan, CHINA; X. J. Su, Shandong Univ, Inst of Crystal Matls, Jian, CHINA; S. X. Shang, Shandong Univ, Dept of Enviromnment Engr, Jinan, CHINA; M. Wang, Shandong Univ, Inst of Crystal Materials, Jinan, CHINA.
SESSION K8: SiO2 GROWTH AND STRUCTURE
Wednesday Afternoon, December 4, 1996
Fairfax A (S)
1:30 PM K8.1
Si 2p CORE-LEVEL SHIFT ASSIGNMENTS: AN EXPERIMENTAL MEASUREMENT OF THE MAGNITUDE OF FINAL STATE EFFECTS AT A MODEL SILICON/SILICON OXIDE INTERFACE, Mark M. Banaszak Holl, Kangzhan Zhang, Univ of Michigan, Dept of Chemistry, Ann Arbor, MI; F. R. McFeely, IBM T.J. Watson Research Ctr, Yorktown Heights, NY.
1:45 PM K8.2
LOW TEMPERATURE SYNTHESIS OF PLASMA TEOS SiO
, Tsukasa Itani, Shun-ichi Fukuyama, Fujitsu Laboratories Ltd, Inorganic Materials & Polymers Lab, Atsugi, JAPAN.
2:00 PM K8.3
IN-SITU MEASUREMENT OF VISCOUS FLOW OF THERMAL SILICON DIOXIDE
THIN FILMS AT HIGH TEMPERATURE., Chia-Liang Yu, John C. Bravman, Paul A. Flinn, Stanford Univ, Dept of MS&E, Stanford, CA.
2:15 PM K8.4
REACTION PATHWAYS FOR NITROGEN INTRODUCTION AT
INTERFACES, Kwangok Kim, Gerald Lucovsky, Hiro Niimi, North Carolina State Univ, Dept of Physics, Raleigh, NC.
2:30 PM K8.5
FUNDAMENTAL STUDIES OF THE OXIDATION KINETICS OF HIGH-PURITY SILICON OXYNITRIDE, Dionissios Manessis, Honghua (Henry) Du, Stevens Inst of Technology, Dept of Materials Science, Hoboken, NJ.
2:45 PM BREAK
3:15 PM K8.6
TEOS REACTION RATES AT 1000 K: ZERO-ORDER DEPENDENCE ON
HYDROXYL COVERAGE AND IMPLICATIONS FOR SITE-INDEPENDENT
REACTIONS, Michael E. Bartram, Harry K. Moffat, Sandia National Laboratories, Chemical Processing Sciences, Albuquerque, NM.
3:30 PM K8.7
STRUCTURAL CHARACTERIZATION OF DIFFERENT INSULATING FILMS BY SPECTROSCOPIC ELLIPSOMETRY AND GRAZING X-RAY REFLECTANCE, Pierre Boher, Jean Louis Stehle, SOPRA, Bois Colombes, FRANCE; Louis Hennet, Univ Henri Poincare, Vandeouvre les Nancy, FRANCE.
3:45 PM K8.8
STRUCTURE OF THERMALLY GROWN
ON CRYSTALLINE 6H-SiC, Hidekazu Tsuchida, Central Research Inst of Elec Power Industry, Yokosuka Research Lab, Kanagawa, JAPAN; Isaho Kamata, Kunikazu Izumi, Ctr Res Inst of Elec Power Ind, Yokosuka Res Lab, Kanagawa, JAPAN.
4:00 PM K8.9
SOL-GEL PROCESSING AND CHARACTERIZATION OF SILICA THIN FILMS FOR ON-CHIP HUMIDITY SENSORS, Julie R. Kokan, Rosario A. Gerhardt, Georgia Inst of Technology, School of MS&E, Atlanta, GA.