Chairs
Tomas de la Rubia, Lawrence Livermore National Laboratory
Linn Hobbs, MIT
Ian Robertson, Univ of Illinois-Urbana
Gary Was, Univ of Michigan
Symposium Support
- Lawrence Livermore National Laboratory
- Oak Ridge National Laboratory
* Invited paper
SESSION B1/A1: TRANSIENT ENHANCED DIFFUSION IN SILICON
Chair: Kevin S. Jones
Monday Morning, December 2, 1996
America Center (W)
8:30 AM *B1.1/A1.1
CRITICAL DEFECT-DOPANT ISSUES FOR ION IMPLANTATION IN SILICON, John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ.
9:00 AM *B1.2/A1.2
TRANSIENT ENHANCED DIFFUSION OF DOPANTS IN PREAMORPHIZED Si LAYERS, Alain Claverie, CNRS, CETIES, Toulouse, FRANCE; C. Bonafos, Jim Omri, CNRS, CEMES, Toulouse, FRANCE.
9:30 AM B1.3/A1.3
TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON: THE INTERSTITIAL FLUX, Todd W. Simpson, Richard D. Goldberg, Ian V. Mitchell, Univ of Western Ontario, Dept of Physics, London, CANADA; Jean-Marc Baribeau, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA.
9:45 AM B1.4/A1.4
DOSE AND ENERGY DEPENDENCE OF THE DEFECT MICROSTRUCTURE AND TED IN LOW-ENERGY HIGH-DOSE ARSENIC IMPLANTED SILICON, V. Krishnamoorthy, Brian Beaudet, Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL; David Venables, North Carolina State Univ, Dept of MS&E, Raleigh, NC.
10:00 AM B1.5/A1.5
DAMAGE, DEFECTS AND DIFFUSION FROM 1-5 keV IMPLANTS IN SILICON, Aditya Agarwal, AT&T Bell Laboratories, Murray Hill, NJ; David J. Eaglesham, Dale C. Jacobson, Hans J. Gossman, Bell Labs, Lucent Technologies, Murray Hill, NJ; Yurl Erokhin, Eaton Corporation, Semiconductor Equipment Division, Beverly, MA; Tony E. Haynes, Oak Ridge National Laboratory, Oak Ridge, TN; John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ.
10:15 AM BREAK
10:45 AM B1.6/A1.6
MODELING OF DISLOCATION LOOP GROWTH AND TRANSIENT ENHANCED DIFFUSION IN SILICON FOR AMORPHIZING IMPLANTS
, Alp H. Gencer, Scott T. Dunham, Boston Univ, Dept of Electrical & Computer Engr, Boston, MA.
11:00 AM B1.7/A1.7
Ab Initio STUDIES OF CARBON IMPURITY DIFFUSION AND PAIRING IN Si
, Jing Zhu, Lawrence Livermore National Laboratory, Physics/H-Div, Livermore, CA; M. Lourdes Pelaz, Bell Labs, Lucent Technologies, Murray Hill, NJ; Tomas Diaz dela Rubia, Lawrence Livermore National Laboratory, Physics/H-Div, Livermore, CA; Christian Mailhiot, Lawrence Livermore National Laboratory, Physics & Space Technology, Livermore, California; George H. Gilmer, Bell Labs, Lucent Technologies, Dept of Silicon Processing, Murray Hill, NJ.
11:15 AM B1.8/A1.8
ATOMISTIC MODELLING OF TRANSIENT DIFFUSION OF BORON IN SILICON, Lourdes Pelaz, Bell Labs, Lucent Technologies, Dept of Silicon Processing Research, Murray Hill , NJ; George H. Gilmer, Bell Labs, Lucent Technologies, Dept of Silicon Processing, Murray Hill, NJ; Hans J. Gossman, Conor S. Rafferty, John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ; Martin Jaraiz, Univ de Valladolid, Facultad de Ciencias, Valladolid, SPAIN; Jing Zhu, Lawrence Livermore National Laboratory, Physics/H-Div, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
11:30 AM B1.9/A1.9
CHARGE-STATE DEFECT ENGINEERING OF SILICON DURING ION IMPLANTATION, Richard A. Brown, Chanrae Cho, Jallepally Ravi, George Rozgonyi, North Carolina State Univ, Dept of MS&E, Raleigh, NC; C. Woody White, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
SESSION B2/A2: DEFECTS AND DAMAGE EVOLUTION IN SILICON
Chairs: Harry A. Atwater and David J. Eaglesham
Monday Afternoon, December 2, 1996
America Center (W)
1:30 PM *B2.1/A2.1
MODELS OF EVOLUTION OF DAMAGE FROM ION IMPLANTATION INTO SILICON, Mark E. Law, Univ of Florida, Dept of Electrical & Computer Engr, Gainesville, FL; Kevin S. Jones, Univ of Florida, Dept of MS&E, Gainesville, FL; Aaron D Lilak, Earles K Susan, Univ of Florida, Electrical & Computer Engineering, Gainesville, FL.
2:00 PM *B2.2/A2.2
ROOM TEMPERATURE MIGRATION AND INTERACTION OF ION BEAM INJECTED DEFECTS IN CRYSTALLINE SILICON, Francesco Priolo, Univ di Catania, Dept of Physics, Catania, ITALY; V. Privitera, Salvatore Coffa, CNR, IMETEM, Catania, ITALY; Sebania Libertino, Univ di Catania, Dept of Physics, Catania, ITALY.
2:30 PM B2.3/A2.3
INSTRINSIC POINT DEFECTS IN CRYSTALLINE SILICON: A TIGHT-BINDING STUDY, Meijie Tang, Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
2:45 PM B2.4/A2.4
DEFECT DIFFUSION DURING ANNEALING OF LOW-ENERGY ION-IMPLANTED SILICON: EXPERIMENTS AND SIMULATIONS, Peter J. Bedrossian, Lawrence Livermore National Laboratory, Dept of Matls Science & Tech, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; Maria-Jose Caturla, Lawrence Livermore National Laboratory, Dept of Matls Science & Tech, Livermore, CA.
3:00 PM BREAK
3:30 PM B2.5/A2.5
INTERSTITIAL DEFECT EVOLUTION IN ION-IMPLANTED Si, Janet L. Benton, David J. Eaglesham, John M. Poate, Bell Labs, Lucent Technologies, Murray Hill, NJ; Per Kringhoj, Univ of Aarhus, Inst of Physics & Astronomy, Aarhus C, DENMARK; Salvatore Coffa, CNR, IMETEM, Catania, ITALY; Sebania Libertino, Univ di Catania, Dept of Physics, Catania, ITALY.
3:45 PM B2.6/A2.6
THE EFFECT OF IMPURITY CONTENT ON DEFECT DISTRIBUTION IN MeV ION IMPLANTED Si, Sebania Libertino, Univ di Catania, Dept of Physics, Catania, ITALY; V. Privitera, Salvatore Coffa, CNR, IMETEM, Catania, ITALY; F. Priolo, Univ di Catania, INFM, Catania, ITALY.
4:00 PM B2.7/A2.7
COMPETITION BETWEEN GETTERING BY IMPLANTATION-INDUCED CAVITIES IN SILICON AND INTERNAL GETTERING ASSOCIATED WITH SiO
PRECIPITATION, Scott A. McHugo, Univ of California-Berkeley, Dept of MS&ME, Berkeley, CA; Eicke R. Weber, Univ of California-Berkeley, Dept of Matls Science & Mineral Engr , Berkeley, CA; Samuel M. Myers, Gary A. Petersen, Sandia National Laboratories, Albuquerque, NM.
4:15 PM B2.8/A2.8
GLANCING INCIDENCE X-RAY DIFFRACTION STUDIES OF IMPLANTATION DAMAGE IN SILICON, Paul J. Partyka, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; M. Ghaly, Univ of Illinois-Urbana, Materials Research Lab, Urbana, IL; R. S. Averback, I. K. Robinson, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; M. Wang, Lawrence Livermore National Laboratory, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; P. Ehrhart, Forschungszentrum Julich, Juelich, GERMANY.
4:30 PM B2.9/A2.9
MONTE CARLO SIMULATION OF THE ION IMPLANT DAMAGE PROCESS IN SILICON, Shiyang Tian, M. Morris, Steven J. Morris, Borna J. Obradovic, Al F. Tasch, Univ of Texas-Austin, Microelectronics Research Center, Austin, TX.
4:45 PM B2.10/A2.10
ION BEAM INDUCED AMORPHIZATION IN SILICON AT KEV ENERGIES, Maria Jose Caturla, Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
SESSION B3/A3: POSTER SESSION:
SEMICONDUCTORS
Chairs: Nathan W. Cheung Tomas Diaz de la Rubia and Wolfgang Skorupa
Monday Evening, December 2, 1996
8:00 P.M.
America Ballroom (W)
B3.1/A3.1
EFFECTS OF SELF-INTERSTITIAL CLUSTERING ON THE TRANSIENT ENHANCED DIFFUSION OF BORON IN SILICON, Sandro Solmi, S. Valmorri, CNR-Lamel, Bologna, ITALY.
B3.2/A3.2
BORON TRANSIENT ENHANCED DIFFUSION IN HEAVILY PHOSPHORUS DOPED SI, Menbing Huang, Univ of Western Ontario, Dept of Physics, London, CANADA; Ian V. Mitchell, Univ of Western Ontario, Interface Science Western, London, ON.
B3.3/A3.3
EPR STUDY OF DEFECT FORMATION IN H IMPLANTED AND ANNEALED CZ Si, Branko Pivac, B. Rakvin, Rudjer Boskovic Inst, Dept of Physics, Zagreb, CROATIA; F. Corni, Univ di Modena, Dipartimento di Fisica, Modena, ITALY; R. Tonini, G. Ottaviani, Univ di Modena, Dept di Fisica, Modena, ITALY.
B3.4/A3.4
ELECTRONIC STRUCTURE AND GATE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MBE SILICON
-FETS, Oscar Hipolito, Univ de Mogi das Cruzes, Dept of Nucleo de Pesquisa Tech, Mogi das Cruzes, BRAZIL; Jose Eduardo Manzoli, Univ of Sao Paulo, San Paulo, BRAZIL.
B3.5/A3.5
AN ELECTRONIC STOPPING POWER MODEL IN SINGLE-CRYSTAL SILICON FROM A FEW KeV TO SEVERAL MeV, Steven J. Morris, Borna J. Obradovic, Univ of Texas-Austin, Microelectronics Research Center, Austin, TX; Shyh-Horng Yang, TI Inc, Dallas, TX; Al F. Tasch, Univ of Texas-Austin, Microelectronics Research Center, Austin, TX; Leonard M. Rubin, Eaton Corporation, Semiconductor Equipment Division, SEO, Beverly, MA.
B3.6/A3.6
MODELING OF THE VACANCY-MEDIATED DIFFUSION OF As IN Si
, Oleg Pankratov, Lawrence Livermore National Laboratory, Dept of Physics & Space Technology, Livermore, CA; Hanchen Huang, Lawrence Livermore National Laboratory, Dept of Chemistry, Livermore, CA; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
B3.7/A3.7
INVESTIGATION OF ABNORMAL ANNEALING BEHAVIOR [N FAST
NEUTRON IRRADIATED HIGH RESISTIVITY SILICON
DEVICES
, Cheng-Ji Li, Inst of Semiconductors, Beijing, CHINA; Zheng Li, Brookhaven National Laboratory, Upton, NY.
B3.8/A3.8
KINETICS OF INTRINSIC AND DOPANT-ENHANCED SOLID PHASE EPITAXY IN BURIED AMORPHOUS Si LAYERS, Jeffrey C. McCallum, Univ of Melbourne, School of Physics, Parkville, AUSTRALIA.
B3.9/A3.9
THERMAL ASSISTED DIFFUSION IN THE QUENCHING PHASE OF COLLISION CASCADES, Alfredo Caro, Roberto Saliba, Caro Magdalena, Centro Atomico Bariloche, Bariloche, ARGENTINA.
B3.10/A3.10
EFFECT OF VACANCY-TYPE DEFECTS ON ELECTRICAL-ACTIVATION OF
IMPLANTED INTO SILICON, Masahito Watanabe, NEC Corporation, ULSI Device Dev Lab, Kanagawa, JAPAN; Tomohisa Kitano, Susumu Asada, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN; Akira Uedono, Univ of Tsukuba, Inst of Matls Sci,; Tsuyoshi Moriya, Univ of Tsukuba, Dept of Matls Science, Ibaraki, JAPAN; Takao Kawano, Univ of Tsukuba, Radioisotope Center, Ibaraki, JAPAN; Shoichiro Tanigawa, Univ of Tsukuba, Dept of Matls Science, Ibaraki, JAPAN; Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado, Electrotechnical Laboratory, Ibaraki, JAPAN.
B3.11/A3.11
ANNEALING PROPERTIES OF DEFECTS IN
IMPLANTED Si, Tomohisa Kitano, Masahito Watanabe, NEC Corporation, ULSI Device Dev Lab, Kanagawa, JAPAN; Akihiro Yaoita, Shizuo Oguro, NEC Corporation, ULSI Device Development Lab, Kanagawa, JAPAN; Akira Uedono, Univ of Tsukuba, Inst of Matls Sci,; Tsuyoshi Moriya, Shoichiro Tanigawa, Univ of Tsukuba, Dept of Matls Science, Ibaraki, JAPAN; Takao Kawano, Univ of Tsukuba, Radioisotope Center, Ibaraki, JAPAN; Ryoichi Suzuki, Toshiyuki Ohdaira, Tomohisa Mikado, Electrotechnical Laboratory, Ibaraki, JAPAN.
B3.12/A3.12
RAMAN SPECTROSCOPY OF ION-IMPLANTED SILICON, James P. Lavine, Eastman Kodak Co, Rochester, NY; David D. Tuschel, Eastman Kodak Co, ATD, Rochester, NY.
B3.13/A3.13
MASK-EDGE DISTRIBUTIONS DURING ION IMPLANTATION OF 80 keV
INTO Si, Daniel Danailov, Bulgaria Academy of Sciences, Inst of Electronics, Sofia, Bulgaria.
B3.14/A3.14
VACANCY-TYPE DEFECTS IN ELECTRON AND PROTON IRRADIATED II-VI COMPOUNDS, Sebastian Brunner, Werner Puff, Technische Univ Graz, Inst fur Kernphysik, Graz, AUSTRIA; Adam G. Balogh, Technische Hochschule Darmstadt, Dept of Matls Science, Darmstadt, GERMANY; Horst Baumann, J.W. Goethe Univ Frankfurt, Inst fur Kernphysik, Frankfurt am Main, GERMANY; Peter Mascher, McMaster Univ, Dept of Engineering Physics, Hamilton, CANADA.
B3.15/A3.15
SECONDARY DEFECT FORMATION AND GETTERING IN MeV SELF-IMPLANTED SILICON, Richard A. Brown, Oleg Kononchuk, Andrjez Romanowksi, Zbigniew Radzimski, George Rozgonyi, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Fernando Gonzalez, Micron Technology Inc, Boise, ID.
B3.16/A3.16
INVESTIGATIONS OF PLASMA IMMERSION ION IMPLANTATION HYDROGENATION FOR POLY-Si TFTS USING AN ICP PLASMA SOURCE, Yuanzhong Zhou, Shu Qin, Chung Chan, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Tsu-Jae King, Xerox Palo Alto Research Center, Palo Alto, CA.
B3.17/A3.17
STUDY OF HYDROGEN GETTERING EFFECTS IN PLASMA IMMERSION ION IMPLANTATION DOPING EXPERIMENTS, Shu Qin, Chung Chan, Northeastern Univ, Dept of Electrical & Computer Engr, Boston, MA; Linggen Song, Fudan Univ, Dept of Matls Science, Shanghai, CHINA; Xiangfu Zong, Fudan Univ, Dept of Materials Science, Shanghai, CHINA.
B3.18/A3.18
GROWTH MECHANISM OF CARBON IN SILICON(100) USING NEGATIVE CARBON ION BEAM SOURCE, Y. W. Ko, S. I. Kim, Stevens Inst of Technology, Dept of Physics & Engr Physics, Hoboken, NJ.
B3.19/A3.19
FABRICATION OF INVERSION
P-N JUNCTIONS IN SILICON, Alexander N. Buzynin, General Physics Inst, Phys Stat Sol, Moscow, RUSSIA; Albert E. Luk'yanov, Moscow State Univ, Dept of Physics, Moscow, Russia; Vyacheslav V. Osiko, General Physics Inst, Phys Stat Sol , Moscow, RUSSIA; Vladimir V. Voronkov, Inst of Rare Metals, Semiconductors, Moscow, RUSSIA.
B3.20/A3.20
ELECTRICAL PROPERTY OF COPPER FILMS BY PARTIALLY IONIZED BEAM DEPOSITION WITH THICKNESS, Sung Han, KIST, Ceramics Div, Seoul, SOUTH KOREA; Ki-Hyun Yoon, Yonsei Univ, Dept of Ceramic Engr, Seoul, SOUTH KOREA; K. H. Kim, Hong-Gui Jang, Hyung-Jin Jung, Seok-Keun Koh, KIST, Ceramics Div, Seoul, SOUTH KOREA.
B3.21/A3.21
Cu FILMS ON TiN/Ti/Si(100) BY PARTIALLY IONIZED BEAM DEPOSITION, Hong-Gui Jang, K. H. Kim, Sung Han, Won-Kook Choi, Hyung-Jin Jung, Seok-Keun Koh, KIST, Ceramics Div, Seoul, SOUTH KOREA.
B3.22/A3.22
EFFECT OFAr ION BOMBARDMENT ON THE STABILITY OF NARROW COBALT SILCIDE LINE, Jer-shen Maa, Chien-Hsiung Peng, Sharp Microelectronics Tech, Process Technology, Camas, WA.
B3.23/A3.23
GROWTH OF
ALLOYS ON Si BY COMBINED LOW-ENERGY ION BEAM AND MOLECULAR BEAM EPITAXY METHOD, Hajime Shibata, Electrotechnical Laboratory, Photonprocess Section, Ibaraki, JAPAN; S. Kimura, Y. Makita, A. Obara, N. Kobayashi, H. Takahashi, H. Katsumata, J. Tanabe, Electrotechnical Laboratory, Tsukuba, JAPAN; S. Uekusa, Electrotechnical Laboratory, Photonprocess Section, Tsukuba, JAPAN.
B3.24/A3.24
FORMATION AND CHARACTERISTICS OF CoSi
LAYERS SYNTHESIZED BY MEVVA IMPLANTATION, S. P. Wong, Chinese Univ of Hong Kong, Dept of Electronic Engr, Shantin NT, HONG KONG; Qicai Peng, W. Y. Cheung, Chinese Univ of Hong Kong, Dept of Electical Engr & Matls Tech, Shatin NT, HONG KONG; W. S. Guo, Chinese Univ of Hong Kong, Dept of EE&Matls Tech, Shatin NT, HONG KONG; J. B. Xu, I. H. Wilson, Chinese Univ of Hong Kong, Dept of Electrical Engr, Shatin NT, HONG KONG; Sui-Kong Hark, Chinese Univ of Hong Kong, Dept of Physics, Shatin NT, HONG KONG; R. Morton, S. S. Lau, Univ of California-San Diego, Dept of Electrical & Computer Engr, La Jolla, CA.
B3.25/A3.25
ION BEAM SYNTHESIS OF SiC/Si HETEROSTRUCTURES BY MEVVA IMPLANTATION, S. P. Wong, Chinese Univ of Hong Kong, Dept of Electronic Engr, Shantin NT, HONG KONG; L. C. Ho, Chinese Univ of Hong Kong, Dept of EE& Matls Tech, Shatin NT, HONG KONG; W. S. Guo, Chinese Univ of Hong Kong, Dept of EE&Matls Tech, Shatin NT, HONG KONG; H. Yan, Chinese Univ of Hong Kong, Dept of EE & Matls Tech , Shantin NT, HONG KONG; W. M. Kwok, Chinese Univ of Hong Kong, Dept of Chem & Matls Tech, Shatin, HONG KONG.
B3.26/A3.26
DEFECT ANNEALING IN GERMANIUM-IMPLANTED 6H-SiC WAFERS, Y. Pacaud, Research Center Rossendorf Inc, Inst Ionenstrahlphysik und Materialforschung, Dresden, GERMANY; Viton Heera, Research Center Rossendorf Inc, Inst Ion Beam Physics & Materials Res, Dresden, GERMANY; Rossen Yankov, Research Center Rossendorf Inc, Inst of Ion Beam Physics, Dresden, GERMANY; R. Kogler, Research Center Rossendorf Inc, Inst Ionenstrahlphysik Materiakforschung, Dresden, GERMANY; Gerhard Brauer, Technische Univ Dresden, Research Center Rossendorf, Dresden, GERMANY; Wolfgang Skorupa, Research Center Rossendorf Inc, Inst Ion Beam Phys & Matls Research, Dresden, GERMANY; J. Stoemenos, Univ of Thessaloniki, Dept of Physics, Thessaloniki, GREECE; R. Barklie, Trinity College, Dept of Physics, Dublin, IRELAND; A. Perez-Rodriguez, Univ de Barcelona, Dept de Fisica Aplicada i Electronica, Barcelona, SPAIN.
B3.27/A3.27
CONDUCTIVE TUNGSTEN-BASED LAYERS SYNTHESIZED BY ION IMPLANTATION INTO 6H-SILICON CARBIDE, Wolfgang Skorupa, Research Center Rossendorf Inc, Inst Ion Beam Phys & Matls Research, Dresden, GERMANY; Hannes Weishart, Research Center Rossendorf Inc, Inst Ionenstrahlphsik & Materialforschung, Dresden, GERMANY.
B3.28/A3.28
GERMANIUM REDISTRIBUTION PHENOMENA IN THE SYNTHESIS OF SiGe LAYERS, Chitranjan J. Patel, John B. Butcher, Middlesex Univ, Microelectronics Research Centre, London, UNITED KINGDOM.
B3.29/A3.29
INTERACTION OF CAVITIES AND DISLOCATIONS IN Si-Ge, David M. Follstaedt, Samuel M. Myers, Stephen R. Lee, Sandia National Laboratories, Albuquerque, NM.
B3.30/A3.30
PROTON RADIATION EFFECTS ON Pd/n-GaAs SCHOTTKY BARRIER DIODES, Subramanian Arulkumaran, N. Dharmarsu, Anna Univ, Crystal Growth Ctr, Berlin, GERMANY; Jesudoss Arokiaraj, R. R. Sumathi, Anna Univ, Crystal Growth Centre, Berlin, GERMANY; Janagiraman Kumar, Anna Univ, Crystal Growth Ctr.
B3.31/A3.31
INVESTIGATION OF SILICON NITRIDE FORMATION USING NF
ION IMPLANTATION, T. W. Little, F. S. Ohuchi, Univ of Washington, Dept of MS&E, Seattle, WA.
B3.32/A3.32
SiC PRECIPITATE FORMATION DURING HIGH DOSE CARBON IMPLANTATION INTO SILICON, Jorg K.N. Lindner, Kerstin Volz, Bernd Stritzker, Univ Augsburg, Inst of Physics, Augsburg, GERMANY.
B3.33/A3.33
DEFECT ENGINEERING IN IRRADIATED GaAs, Richard A. Brown, North Carolina State Univ, Dept of MS&E, Raleigh, NC; J. S. Williams, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA.
B3.34/A3.34
DEFECTS PRODUCED BY PROTON IRRADIATION IN SEMI-INSULATING GaAs, Anna Cavallini, A. Castaldini, L. Polenta, Univ di Bologna, Dept of Physics, Bologna, ITALY; C. Canali, Univ di Modena, Dept of Physics, Modena, ITALY; F. Nava, Univ di Modena, INFN, Modena, ITALY; C. del Papa, Univ di Udine, Dept of Physics, Udine, ITALY.
B3.35/A3.35
AMORPHIZATION MECHANISMS IN AlGaAs, Benjamin Wilson Lagow, Ian McLean Robertson, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; Britt Anne Turkot, Dept of MS&E, Urbana, IL.
B3.36/A3.36
ELECTRON BEAM ENHANCED PRECIPITATION IN HIGHLY CARBON DOPED GaAs LAYERS, Peter Werner, U. Goesele, Max-Planck-Inst, Microstructure Physics, Halle/Saale, GERMANY; H. Kohda, NTT LSI Laboratories, Atsugi-shi, JAPAN.
B3.37/A3.37
MODELING INTERSTITIAL INJECTION IN ION IMPLANTED SEMICONDUCTORS, Heyward G. Robinson, Stanford Univ, Dept of Electrical Engr, Stanford, CA; Stacy Holander-Gleixner, Stanford Univ, Dept of Materials Science, Stanford, CA; C. R. Helms, Stanford Univ, Dept of Electrical Engr, Stanford, CA.
B3.38/A3.38
ION BEAM MODIFICATION OF CLUSTER-COVERED SILICON SURFACES, Oleksiy Gulko, Martin Zinke-Allmang, Univ of Western Ontario, Dept of Physics, London, CANADA.
SESSION B4: METALS: RADIATION INDUCED SEGREGATION
Chair: Edward P. Simonen
Tuesday Morning, December 3, 1996
America North (W)
9:00 AM *B4.1
RADIATION-INDUCED SEGREGATION: AN UPDATE, Lynn Rehn, Argonne National Laboratory, Materials Science Div, Argonne, IL.
9:30 AM B4.2
RADIATION-INDUCED MICROSTRUCTURAL CHANGES IN ALLOY X-750, Ed A. Kenik, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge , TN.
9:45 AM B4.3
A COMPARISON OF GRAIN BOUNDARY MONOLAYER SEGREGATION MEASUREMENTS MADE USING FEGSTEM AND AUGER SPECTROSCOPY, Stan Fisher, Barrington Lee, Richard Scowen, Paul Spellward, Magnox Electric plc, Dept of Nuclear Systems, Gloucestershire , UNITED KINGDOM.
10:00 AM B4.4
MODELING OF RADIATION-INDUCED SEGREGATION IN AUSTENITIC Fe-Cr-Ni ALLOYS, Todd R. Allen, Univ of Michigan, Dept of NS&RS, Ann Arbor, MI; Gary S. Was, Univ of Michigan, Dept of Nuclear Engr, Ann Arbor, MI.
10:30 AM B4.6
INTERGRANULAR SULFUR AND PHOSPHORUS SEGREGATION IN NEUTRON IRRADIATED AND POST-IRRADIATION ANNEALED VANADIUM-20 WT.% TITANIUM ALLOYS, Tamara E. Bloomer, Iowa State Univ, Ames Lab, Ames, IA; D. Y. Lyu, Chonju Technical College, Dept Die & Mold Design, Chonju, SOUTH KOREA; Jun Kameda, Iowa State Univ, Ames Lab, Ames, IA.
10:45 AM BREAK
SESSION B5: METALS: ION INDUCED DAMAGE
Chair: Lynn Rehn
Tuesday Morning, December 3, 1996
America North (W)
11:00 AM *B5.1
IN SITU ION BEAM RESEARCH IN ARGONNE'S INTERMEDIATE VOLTAGE ELECTRON MICROSCOPE, Charles W. Allen, Argonne National Laboratory, Argonne, IL; Edward A. Ryan, Argonne National Laboratory, Materials Science Div, Argonne, IL.
11:30 AM B5.2
RADIATION EFFECTS IN TARGET MATERIALS FOR SPALLATION NEUTRON SOURCES, Louis K. Mansur, Oak Ridge National Laboratory, Dept of Metals & Ceramics, Oak Ridge, TN; K. Farrell, M. S. Wechsler, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge, TN.
11:45 AM B5.3
SIMULATION IRRADIATION OF CANDIDATE STEELS FOR SPALLATION SOURCES, Nelja Wanderka, Eric Camus, Hahn-Meitner-Inst, Berlin, GERMANY; Heinrich J. Wollenberger, Hahn-Meitner-Inst, Dept of NM, Berlin , GERMANY.
12:00 PM B5.4
SPECTRAL EFFECTS ON DEFECT MICROSTRUCTURE IN HEAVY METALS FOR SPALLATION NEUTRON SOURCE TARGETS, Luke Daemen, Los Alamos National Laboratory, MLNSC, Los Alamos, NM; W. F. Sommer, Los Alamos National Laboratory, Los Alamos, NM; M. Wechsler, North Carolina State Univ, Raleigh, NC.
SESSION B6: METALS: AUSTENITIC ALLOYS
Chair: Louis K. Mansur
Tuesday Afternoon, December 3, 1996
America North (W)
1:30 PM *B6.1
IRRADIATION-INDUCED CHANGES IN THE MICROSTRUCTURE AND MECHANICAL PROPERTIES OF AUSTENITIC STAINLESS STEELS, Glenn E. Lucas, Univ of California-S Barbara, Dept of Chemical Engr, Santa Barbara, CA.
2:00 PM B6.2
DEFECT MICROSTRUCTURES AND DEFORMATION MECHANISMS IN IRRADIATED AUSTENITIC STAINLESS STEELS, Stephen M. Bruemmer, J. I. Cole, Pacific Northwest National Laboratory, Richland, WA; R.D. Carter, Gary S. Was, Univ of Michigan, Dept of Nuclear Engr, Ann Arbor, MI.
2:15 PM B6.3
THE DEPENDENCE OF PROTON IRRADIATED MICROSTRUCTURE ON DOSE, TEMPERATURE AND COMPOSITION OF AUSTENITIC STAINLESS STEELS, Jian Gan, Univ of Michigan, Dept of NE&RS, Ann Arbor, MI; Gary S. Was, Univ of Michigan, Dept of Nuclear Engr, Ann Arbor, MI.
2:30 PM B6.4
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY OF DEFECTS CLUSTERS IN 316 SS
AND Al DURING ELECTRON AND ION IRRADIATION AT ROOM TEMPERATURE, Tetsuya Saito, Nat Research Inst for Metals, Ibaraki, JAPAN.
2:45 PM B6.5
SHORT AND LONG-RANGE ORDERING OF (Ni
Cr
)
Fe
ALLOYS UNDER ELECTRON IRRADIATION, Brigitte Beuneu, Ecole Polytechnique , Laboratoire des Solides Irradies, Palaiseau, FRANCE.
3:00 PM BREAK
SESSION B7: METALS: FERRITIC ALLOYS
Chair: Glenn E. Lucas
Tuesday Afternoon, December 3, 1996
America North (W)
3:15 PM *B7.1
A COMPUTATIONAL MICROSCOPY STUDY OF NANO-STRUCTURES IN IRRADIATED PRESSURE VESSEL STEELS, G. Robert Odette, Univ of California-S Barbara, Dept of Mechanical Engr, Santa Barbara, CA; Chun-Li Liu, Univ of California-S Barbara, Dept of Chemical Engr, Santa Barbara, CA; B. Wirth, Univ of California-S Barbara, Dept of Mech & Envir Engr, Santa Barbara, CA.
3:30 PM B7.2
MICROSTRUCTURAL EVOLUTION, MODELLING AND MECHANICAL PROPERTIES IN PRESSURE VESSEL STEELS, W. J. Phythian, Colin A. English, Materials Performance, Oxfordshire, UNITED KINGDOM.
4:00 PM B7.4
EXAMINATION OF IRRADIATED PRESSURE VESSEL STEEL USING POSITRON ANNIHILATION LIFETIME SPECTROSCOPY, Steve E. Cumblidge, Arthur T. Motta, G. L. Catchen, Pennsylvania State Univ, Dept of Nuclear Engr, University Park, PA.
4:15 PM B7.5
CLUSTERING OF POINT DEFECTS UNDER ELECTRON IRRADIATIONS IN IRON DILUTE ALLOYS AND AN IRON MANGANESE NICKEL ALLOY, Alain Barbu, Ecole Polytechnique , SESI/CEREM/DTA/CEA, Palaiseau, FRANCE.
4:30 PM B7.6
COMPUTER SIMULATION STUDY OF THE EFFECTS OF COPPER SOLUTES ON CASCADE DAMAGE IN FE-CU ALLOYS, Andy F. Calder, David J. Bacon, Univ of Liverpool, Material Science & Engineering, Liverpool, UNITED KINGDOM.
4:45 PM B7.7
SMALL ANGLE NEUTRON SCATTERING MODELING OF COPPER-RICH PRECIPITATES IN STEEL, S. Spooner, Oak Ridge National Laboratory, Dept of Solid State, Oak Ridge, TN.
SESSION B8: BASIC PROCESSES
Chairs: David M. Follstaedt and Lance L. Snead
Wednesday Morning, December 4, 1996
America North (W)
8:30 AM *B8.1
ON THE DETERMINATION OF LOOP NATURE IN THE TEM, M. L. Jenkins, Univ of Oxford, Dept of Materials, Oxford, UNITED KINGDOM; H. Fukushima, Hiroshima Univ, Dept of Physics & Chemistry, Hiroshima, JAPAN; M. A. Kirk, Argonne National Laboratory, Materials Science Div, Argonne, IL.
9:00 AM B8.2
CASCADE DEFECTS BEYOND THE PRIMARY DAMAGE STATE, Howard L. Heinisch, Pacific Northwest National Laboratory, Richland, WA.
9:15 AM B8.3
AN M.D. STUDY OF TEMPERATURE EFFECTS ON DEFECT PRODUCTION BY DISPLACEMENT CASCADES IN
-IRON, Fei Gao, David J. Bacon, Univ of Liverpool, Material Science & Engineering, Liverpool, UNITED KINGDOM.
9:30 AM B8.4
MOLECULAR DYNAMICS SIMULATIONS OF CASCADES IN SIMPLE NUCLEAR WASTE GLASS COMPOSITIONS, J.-M. Delaye, CEA Saclay, OTA-SRMP, Gif-sur-Yvette, FRANCE; D. Ghaleb, CEA Saclay, Dept of DCC-SCD, Bagnls sur Ceze, FRANCE.
9:45 AM B8.5
EFFECTIVE DAMAGE PRODUCTION CROSS SECTIONS BASED ON MOLECULAR DYNAMICS SIMULATIONS, Roger E. Stoller, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge, TN; Lawrence R. Greenwood, Pacific Northwest National Laboratory, Dept of Analytical Chemistry, Richland, WA.
10:00 AM BREAK
10:15 AM B8.6
MICROSTRUCTURAL KINETICS IN ALLOYS UNDERGOING TRANSMUTATIONS APPLICATION TO AlC NEUTRON ABSORBERS, C. Desgranges, Framatome, Dept of Nuclear Fuel, Gif-sur-Yvette, FRANCE; G. Martin, CEA Saclay, DECM-SRMP, Gif-sur-Yvette, FRANCE; F. Defoort, Framatome, Dept of Nuclear Fuel, Lyon, FRANCE.
10:30 AM B8.7
TRANSMISSION ELECTRON MICROSCOPY STUDY IN-SITU OF RADIATION-INDUCED DEFECTS IN COPPER AT ELEVATED TEMPERATURES, Tyrone L. Daulton, Marquis A. Kirk, Lynn Rehn, Argonne National Laboratory, Materials Science Div, Argonne, IL.
10:45 AM B8.8
HEAVY-ION-INDUCED PLASTIC FLOW IN GOLD, Robert C. Birtcher, Argonne National Laboratory, Materials Science Div, Argonne, IL; Stephen E. Donnelly, Univ of Salford, Joule Physics Lab, Salford, United Kingdom.
11:00 AM B8.9
THE CORRELATION BETWEEN HEAVY ION RADIATION DAMAGE AND BULK RADIATION DAMAGE WITH NEUTRONS, Shiori Ishino, Tokai Univ, Nuclear Eng, Kanagawa ken, JAPAN.
11:15 AM B8.10
DEFECTS AND PHASE CHANGE INDUCED BY GIANT ELECTRONIC EXCITATIONS WITH GeV IONS AND 20 MeV CLUSTER BEAM, M. Beranger, B. Canut, S.M.M. Ramos, Univ Claude Bernard Lyon I, Villeurbanne, FRANCE; Paul Thevenard, Univ Claude Bernard Lyon I, Dept de Physique des Materiaux, Villeurbanne, FRANCE.
11:30 AM B8.11
IN-SITU IRRADIATION STUDIES OF THE EFFECTS OF HELIUM ON THE MICROSTRUCTURAL EVOLUTION OF VANADIUM ALLOYS, Doraiswamy Narayanaswamy, Dale E. Alexander, Argonne National Laboratory, Materials Science Div, Argonne, IL.
11:45 AM B8.12
MICROSTRUCTURE OF V-4%Cr-4%Ti FOLLOWING LOW TEMPERATURE IRRADIATION, Philip M. Rice, Lance L. Snead, D. J. Alexander, S. J. Zinkle, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge, TN.
SESSION B9: CERAMICS, GLASSES AND AMORPHIZATION
Chairs: Rodney C. Ewing and S. J. Zinkle
Wednesday Afternoon, December 4, 1996
America North (W)
1:30 PM *B9.1
TEM STUDY OF MICROSTRUCTURE EVOLUTION OF ''COMPLEX'' CERAMIC MATERIALS DURING IRRADIATION, Lu-Min Wang, Univ of New Mexico, Dept of Earth & Planetary Science, Albuquerque, NM; Rodney C. Ewing, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM; Wei-Liang Gong, Shi-Xin Wang, Univ of New Mexico, Dept of Earth & Planetary Science, Albuquerque, NM; Al Meldrum, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM.
2:00 PM B9.2
THE PARALLEL BETWEEN ION-BEAM-INDUCED AMORPHIZATION AND GLASS FORMATION, A CASE STUDY OF THE Al-Mg-Si OXIDE SYSTEM, Shi-Xin Wang, Lu-Min Wang, Univ of New Mexico, Dept of Earth & Planetary Science, Albuquerque, NM; Rodney C. Ewing, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM; Robert H. Doremus, Rensselaer Polytechnic Inst, Dept of MS&E, Troy, NY.
2:15 PM B9.3
BEHAVIOUR OF ZIRCONIA BASED FUEL MATERIAL UNDER Xe IRRADIATION, Claude A. Degueldre, Paul-Scherrer-Inst, Dept of LWV, Villigen, SWITZERLAND; P. Heimngartner, Paul-Scherrer-Inst, Matls Behavior Lab, Villigen, SWITZERLAND; G. Ledergerber, Paul-Scherrer-Inst, Matl Behavior Lab, Villigen, SWITZERLAND; N. Sasajima, K. Hojou, T. Muromura, JAERI, R&D Team, Ibaraki, JAPAN; Lu-Min Wang, Wei-Liang Gong, Univ of New Mexico, Dept of Earth & Planetary Science, Albuquerque, NM; Rodney C. Ewing, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM.
2:30 PM *B9.4
SPECTRUM, DOSE RATE AND TEMPERATURE EFFECTS ON THE AMORPHIZATION OF SiC, Lance L. Snead, S. J. Zinkle, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge , TN.
2:45 PM B9.5
A MODEL FOR DEFECT CLUSTERING PROCESSES IN
MULTICOMPONENT SYSTEM AND ITS APPLICATION TO SIC, Hanchen Huang, Lawrence Livermore National Laboratory, Dept of Chemistry, Livermore, CA; Nasr Ghoniem, Univ of California-Los Angeles, Dept of Applied Science & Engr, Los Angeles, CA.
3:00 PM B9.6
HRTEM OF LINEAR DEFECTS IN TL-2212 THIN FILMS, Paula P. Newcomer, Sandia National Laboratories, Org 1152, Albuquerque, NM; Eugene L. Venturini, H. Schone, B. L. Doyle, Sandia National Laboratories, Albuquerque, NM; K. E. Myers, DuPont, Superconductivity Group, Wilmington, DE; M. P. Siegal, Sandia National Laboratories, Albuquerque, NM.
3:15 PM BREAK
3:30 PM *B9.7
RADIATION EFFECTS IN GLASS WASTE FORMS FOR HIGH-LEVEL WASTE AND PLUTONIUM DISPOSAL, William J. Weber, Pacific Northwest National Laboratory, Dept of Materials Science, Richland, WA.
4:00 PM B9.8
MODELING AMORPHIZATION OF TETRAHEDRAL STRUCTURES USING LOCAL APPROACHES, Esther Jesurum, MIT, Dept of Mathematics , Cambridge, MA; Linn W. Hobbs, MIT, Dept of MS&E, Cambridge, MA; Vinay Pulim, MIT, Computer Science Lab, Cambridge, MA; Bonnie Berger, MIT, Dept of Mathematics , Cambridge, MA.
4:15 PM B9.9
ENERGY-FILTERED ELECTRON DIFFRACTION OF RADIATION-AMORPHIZED SILICAS AND PHOSPHATES, Linn W. Hobbs, Y. Michael Shin, MIT, Dept of MS&E, Cambridge, MA; Anthony J. Garratt-Reed, Univ of Liverpool, Dept of Matls Science, Cambridge, MA; A. N. Sreenam, David Sarnoff Research Center, Matls & Bio-Electronics Lab, Princeton, NJ; Lu-Chang Qin, NEC Corporation, Fundamental Research Lab, Ibaraki, JAPAN.
4:30 PM B9.10
RADIATION DAMAGE OF MATERIALS IN THE TRANSMISION ELECTRON MICROSCOPE, Daniel Haskel, Univ of Washington, Dept of Physics, Seattle, WA; Maoxu Qian, Univ of Washington, Dept of MS&E, Seattle, WA; Edward A. Stern, Univ of Washington, Dept of Physics, Seattle, WA; Mehmet Sarikaya, Univ of Washington, Dept of MS&E, Seattle, WA.
4:45 PM B9.11
STUDY OF ATOM-DISPLACEMENT DEFECTS IN ION-IRRADIATED AMORPHOUS
BY MEANS OF SMALL-ANGLE X-RAY SCATTERING, Yehuda Eyal, Technion-Israel Inst of Tech, Dept of Chemistry, Haifa, ISRAEL; Ram Evron, Yachin Cohen, Technion-Israel Inst of Tech, Haifa, ISRAEL.
SESSION B10: POSTER SESSION:
METALS
Chairs: Ian M. Robertson and Gary S. Was
Wednesday Evening, December 4, 1996
8:00 P.M.
America Ballroom (W)
B10.2
EFFECTS OF ION IMPLANTATION AND TEMPERATURE ON RADIATION-INDUCED SEGREGATION IN Ni-9Al ALLOYS, Michael J. Giacobbe, N. Q. Lam, P. R. Okamoto, N. J. Zaluzec, Argonne National Laboratory, Materials Science Div, Argonne, IL; J. F. Stubbins, Univ of Illinois-Urbana, Dept of Nuclear Engr, Urbana, IL.
B10.3
AUGER ELECTRON SPECTROSCOPY MEASUREMENT OF RADIATION-INDUCED SEGREGATION IN HIGH PURITY 304 STAINLESS STEEL, Todd R. Allen, Univ of Michigan, Dept of NS&RS, Ann Arbor, MI; John M. Cookson, Deborah L. Damcott, Univ of Michigan, Dept of Nuc Engr & Radio Science, Ann Arbor , MI; Jeremy T. Busby, Univ of Michigan, Dept of NE&RS, Ann Arbor, MI; Michael Atzmon, Univ of Michigan, Dept of MS&E, Ann Arbor, MI; Gary S. Was, Univ of Michigan, Dept of Nuclear Engr, Ann Arbor, MI.
B10.4
DOSE DEPENDENCE OF RADIATION-INDUCED SEGREGATION IN PROTON IRRADIATED AUSTENITIC ALLOYS, Jeremy T. Busby, Univ of Michigan, Dept of NE&RS, Ann Arbor, MI; Todd R. Allen, Univ of Michigan, Dept of NS&RS, Ann Arbor, MI; Ed A. Kenik, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge , TN; Gary S. Was, Univ of Michigan, Dept of Nuclear Engr, Ann Arbor, MI.
B10.5
RADIATION-INDUCED MINOR ELEMENT SEGREGATION AT AUSTENITIC STAINLESS STEEL GRAIN BOUNDARIES , Edward P. Simonen, Stephen M. Bruemmer, Pacific Northwest National Laboratory, Richland, WA.
B10.6
RADIATION-INDUCED SEGREGATION OF METALS AT MOVING
-AMORPHOUS Si INTERFACES, J. S. Williams, Australian National Univ, Dept of Electronic Matls Engr, Canberra, AUSTRALIA; K. T. Short, ANSTO ARAP, Materials Div, Menai, AUSTRALIA.
B10.8
ANNEALING OF RADIATION DEFECTS AND RADIATION-INDUCED SEGREGATION IN DILUTE NICKEL-SILICON ALLOYS, Vadim Arbuzov, Inst of Metal Physics, Ural Div of RAS, Ekaterinburg, RUSSIA; Sergei E. Danilov, Inst of Metal Physics, Russian Academy of Science, Ekaterinburg, RUSSIA; Anatolii P. Druzhkov, Inst of Metal Physics, Russian Academy of Sciences, Ekaterinburg, RUSSIA.
B10.9
ON THE EFFECTS OF PRIMARY DAMAGE STATE ON THE DISLOCATION AND VOID EVOLUTION UNDER IRRADIATION, Vladimir I. Dubinko, Kharkov Inst of Physics & Technology, Kharkov, UKRAINE.
B10.10
MOLECULAR DYNAMICS STUDY OF DEFECT PRODUCTION IN Au: LOOP FORMATION AND DEFECT EVOLUTION, Meijie Tang, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; Eduardo Alonso, Univ of Madrid, Inst de Fusion Nuclear Polytech, Madrid, SPAIN; Tomas Diaz de la Rubia, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA.
B10.11
COMPUTER SIMULATION STUDY OF THE EFFECTS OF COPPER PRECIPITATES ON DISLOCATION CORE, Thomas Harry, Univ of Liverpool, Dept of MS&E, Liverpool, UNITED KINGDOM; David J. Bacon, Univ of Liverpool, Material Science & Engineering, Liverpool, UNITED KINGDOM.
B10.12
EFFECTS OF HEAVY ION IRRADIATION ON MICROSTRUCTURE OF V-4Cr-4Ti ALLOY AT MODERATE TEMPERATURES, Jerzy Gazda, Argonne National Laboratory, Argonne , IL; H. M. Chung, B. A. Loomis, Argonne National Laboratory, Energy Tech Div, Argonne, IL; M. Meshii, Northwestern Univ, Dept of MS&E, Evanston, IL.
B10.13
NITROGEN VACANCY COMPLEXES IN NITROGEN IRRADIATED METALS, A. van Veen, Delft Univ of Technology, IRI, Delft, NETHERLANDS; K. T. Westerduin, H. Schut, Delft Univ of Technology, Interfaculty Reactor Inst, Delft, NETHERLANDS; Bent Nielsen, Brookhaven National Laboratory, Dept of Physics, Upton, NY; P. Asoka Kumar, V. J. Ghosh, Brookhaven National Laboratory, Upton, NY; Kelvin G. Lynn, Brookhaven National Laboratory, Dept of Materials Science, Upton, NY.
B10.14
DEFECT CLUSTER STRUCTURE AND TENSILE PROPERTIES OF COPPER AND GOLD SINGLE CRYSTALS IRRADIATED WITH 600 MeV PROTONS, Yong Dai, Paul-Scherrer-Inst, Villigen, SWITZERLAND; Max Victoria, EPFL, Centre Rec Phys de Plasma Fusion Tech Matls, Lausanne, SWITZERLAND.
B10.15
SURFACE TOPOGRAPHY OF THIN Au AND Pd FILMS AFTER ION BOMBARDMENT STUDIED WITH STM, Karsten P. Reimann, Univ Goettingen, Dept of Physics, Gottingen, GERMANY; Achim Rehmet, Univ Goettingen, I. Physik Inst, Goettingen, GERMANY; W. Bolse, Univ Goettingen, Physikalische Inst, Gottingen, GERMANY; Ulrich Geyer, Univ Goettingen, I. Phys. Inst, Goettingen, GERMANY.
B10.16
MICROSTRUCTURE EVOLUTION IN He-ION IRRADIATED METALS AT TEMPERATURES BELOW 600
C, Chong-Hong Zhang, Ke-Qin Chen, Yin-Shu Wang, Inst of Modern Physics, Heavy Ion Beam Application, Lanzhou, CHINA; Ji-Guang Sun, General Research Inst, Nonferrous Metals, Beijing, CHINA.
B10.17
TRITIUM SATURATION AND LOW-TEMPERATURE NEUTRON IRRADIATION EFFECTS ON AN AUSTENITIC STAINLESS STEEL, Yuri Zouev, RFNC-VNIIT Ph, Tritium Lab, Chelyabinsk, RUSSIA; Vadim Arbuzov, Inst of Metal Physics, Ural Div of RAS, Ekaterinburg, RUSSIA; Boris N. Goshchitskii, Vitaly D. Parkhomenko, Inst of Metal Physics, Russian Academy of Science, Ekaterinburg, RUSSIA; Victor Sagaradze, Inst of Metal Physics, Ural Div RAS, Ekaterinburg, RUSSIA.
B10.18
MICROSTRUCTURE EVOLUTION OF AGING 16Cr-15Ni-3Mo-1Ti STAINLES STEEL DURING HIGH DOSE
IRRADIATION , Victor Sagaradze, Inst of Metal Physics, Ural Div RAS, Ekaterinburg, RUSSIA; Sergei S. Lapin, Boris N. Goshchitskii, Inst of Metal Physics, Russian Academy of Science, Ekaterinburg, RUSSIA; Marquis A. Kirk, Argonne National Laboratory, Materials Science Div, Argonne, IL.
B10.19
Ar IRRADIATION-ENHANCED
-Nb PRECIPITATION IN THE
-PHASE OF Zr-2.5Nb, Heilong Zou, G. M. Hood, O. T. Woo, J. A. Roy, AECL Research, Chalk River Lab, Chalk River, CANADA.
B10.20
MIXING OF AL INTO URANIUM SILICIDES REACTOR FUELS, Robert C. Birtcher, Peter M. Baldo, Bernie J. Kestel, Fu-Rong Ding, Argonne National Laboratory, Dept of Materials Science, Argonne, IL.
B10.21
STRUCTURAL CHARACTERIZATION OF B
ION IMPLANTATION INDUCED AMORPHIZATION IN POLYCRYSTALLINE Ni THIN FILMS, Peter C. Liu, Northwestern Univ, Dept of MS&E, Evanston, IL; P. R. Okamoto, N. J. Zaluzec, Argonne National Laboratory, Materials Science Div, Argonne, IL; M. Meshii, Northwestern Univ, Dept of MS&E, Evanston, IL.
B10.22
THE INFLUENCE OF He ON CAVITY NUCLEATION IN ISOTOPICALLY TAILORED Fe-12%Cr ALLOYS, Philip M. Rice, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge, TN; G. Robert Odette, Univ of California-S Barbara, Dept of Mechanical Engr, Santa Barbara, CA.
B10.23
ION BEAM MIXING AND SOLID STATE REACTION IN ZR-FE MULTILAYERS, A. Paesano, Univ Estadual de Maringa, Maringa, BRAZIL; Arthur T. Motta, Pennsylvania State Univ, Dept of Nuclear Engr, University Park, PA; Robert C. Birtcher, Argonne National Laboratory, Materials Science Div, Argonne, IL; S. R. Teixeira, L. Amaral, UFRGS, Porto Alegre, BRAZIL.
B10.24
MECHANISMS OF PHASE TRANSFORMATIONS IN AUSTENITIC STAINLESS STEELS DURING IRRADIATION BY NEUTRONS AND HEAVY IONS, Oleg V. Borodin, Ivan M. Neklyudov, Victor N. Voyevodin, NRC KIPT, Kharkov, UKRAINE.
B10.25
PHASE EVOLUTION DURING ION BEAM MIXING OF Ag-CuBATCH 536, L. C. Wei, Univ of Illinois-Urbana, Materials Research Lab, Urbana, IL; R. S. Averback, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL.
B10.26
ATOMIC SCALE OBSERVATION OF PHASE TRANSFORMATIONS IN IRRADIATED FERRITIC MATERIALS BY 3D ATOMIC TOMOGRAPHY, Philippe Pareige, LMIE, URS CNRS 808 Rouen, Cedex, FRANCE; Didier Blavette, Pierre Auger, Stephen Welzel, LMIE, Faculte des Sciences, Univ de Rouen, Mont St Aigan Cedex, FRANCE; Alain Barbu, Ecole Polytechnique , SESI/CEREM/DTA/CEA, Palaiseau, FRANCE.
B10.27
ION IRRADIATION EFFECTS ON MARTENSITE PHASE TRANSFORMATION TEMPERATURE OF Ni-Ti-Nb SHAPE MEMORY ALLOY, Yutaka Suzuki, Hitachi Ltd, Dept of Nuclear Power, Ibaraki, JAPAN; Naoto Shigenaka, Hitachi Ltd, Power & Industrial Systems, Ibaraki, JAPAN; Haruo Fujimori, Hitachi Ltd, Hitachi Works, Ibaraki, JAPAN; Yoshihide Ishiyama, Nippon Nucelar Fuel Development Co Ltd, Ibaraki, JAPAN.
B10.28
A KINETIC DESCRIPTION OF PHASES FORMATION IN IRRADIATED THIN Fe/Al BILAYERS, P.C.T. D'Ajello, UFSC, Dept de Fisica, Florianopolis, BRAZIL.
B10.29
MICROSTRUCTURE EVOLUTION OF URANIUM DIOXIDE AND ZIRCONIUM CLADDING DURING IRRADIATION, Valery Yakovlev, Peter Grintchuk, Victor Golovanov, State Scientific Centre, Inst of Atomic Reactors, Ulyanovsk, RUSSIA.
B10.30
ATOM TRANSPORT IN NICKEL BY DISPLACEMENT CASCADES FOR SPATIALLY DEPENDENT DISPLACEMENT RATE AND SINK STRENGTH, Peter Fielitz, Michael-Peter Macht, Volkmar Naundorf, Hahn-Meitner-Inst, Dept of NM, Berlin, GERMANY; Heinrich J. Wollenberger, Hahn-Meitner-Inst, Dept of NM, Berlin , GERMANY.
B10.31
CALCULATION OF RADIATION-INDUCED POINT DEFECTS USING EMBEDDED ATOM POTENTIALS IN FCC METALS , Masao Doyama, Yoshiaki Kogure, K. Hoshi, S. Matsuo, D. Murai, Teikyo Univ of Science & Tech, Dept of Materials, Yamanashi, JAPAN.
B10.32
EFFECTS OF THE SURFACE ON DISPLACEMENT CASCADES
PRODUCED BY HEAVY-ION IRRADIATION OF Ni
Al AND Cu
Au, M. L. Jenkins, Univ of Oxford, Dept of Materials, Oxford, UNITED KINGDOM; S. Muller, C. Abromeit, Hahn-Meitner-Inst, Berlin, GERMANY; Heinrich J. Wollenberger, Hahn-Meitner-Inst, Dept of NM, Berlin , GERMANY.
B10.33
MONTE CARLO SIMULATION OF CLUSTER GROWTH AND DEFECT ANNEALING, Alexander V. Fedorov, Delft Univ of Technology, Dept of Reactor Physics, Delft, NETHERLANDS; A. van Veen, Delft Univ of Technology, Intrfaculty Reactor Inst, Delft, NETHERLANDS.
B10.34
SPECIFIC EFFECTS OF THE DISPLACEMENT CASCADES ON THE KINETICS OF PRECIPITATION OF COPPER IN IRON, Alain Barbu, Ecole Polytechnique , SESI/CEREM/DTA/CEA, Palaiseau, FRANCE; D. Lesueur, Ecole Polytechnique , SESI/CEA-CEREM-DECM, Palaiseau, FRANCE; J. Dural, CIRIL, CEA-CNRS, Caen, FRANCE.
B10.35
ION IRRADIATION EFFECTS ON MARTENSITE PHASE TRANSFORMATION TEMPERATURE OF Ni-Ti-Nb SHAPE MEMORY ALLOY, Yutaka Suzuki, Hitachi Ltd, Dept of Nuclear Power, Ibaraki, JAPAN; Naoto Shigenaka, Hitachi Ltd, Power & Industrial Systems, Ibaraki, JAPAN; Haruo Fujimori, Hitachi Ltd, Hitachi Works, Ibaraki, JAPAN; Yoshihide Ishiyama, Nippon Nucelar Fuel Development Co Ltd, Ibaraki, JAPAN.
B10.36
COMPUTER SIMULATION OF THE MIGRATION OF SELF-INTERSTITIAL ATOMS IN
-ZIRCONIUM, Barry J. Whiting, David J. Bacon, Univ of Liverpool, Material Science & Engineering, Liverpool, UNITED KINGDOM.
B10.37
HIGH-DOSE NEUTRON IRRADIATION EFFECTS ON ZIRCONIUM ALLOYS, Valentin Shamardin, G. Kobylyansky, State Scientific Centre, Research Inst of Atomic Reactors, Wyanovsk, RUSSIA.
B10.38
-PHASE DECOMPOSITION IN Zr-2.5 wt
Nb PRESSURE TUBES DURING IRRADIATION, Malcolm Griffiths, Atomic Energy of Canada Ltd, Chalk River , CANADA; Glenn A. McRae, Atomic Energy of Canada Ltd, Chalk River Lab, Chalk River, CANADA.
B10.39
EIS OF OXIDE FILMS ON IRRADIATED Zr-2.5Nb PRESSURE TUBES, Michael Maguire, Glenn A. McRae, Atomic Energy of Canada Ltd, Chalk River Lab, Chalk River, CANADA.
B10.40
COMPUTER SIMULATION OF DISPLACEMENT CASCADES IN
-Zr, David J. Bacon, Fei Gao, Univ of Liverpool, Material Science & Engineering, Liverpool, UNITED KINGDOM; S. J. Wooding, Univ of Liverpool, Dept of MS&E, Liverpool, UNITED KINGDOM; Andy F. Calder, Univ of Liverpool, Material Science & Engineering, Liverpool, UNITED KINGDOM; L. M. Howe, AECL Research, Chalk River, ON.
B10.41
STRUCTURE INVESTIGATION OF THE INFLUENCE OF THE IRRADIATION TEMPERATURE ON THE FORMATION OF DEFECTS IN NUCLEAR PRESSURE VESSEL STEEL A 533-B-1, Mirco Grosse, P. Nitzsche, J. Bohmert, Research Center Rossendorf Inc, Dresden, GERMANY; A. Hempel, Gerhard Brauer, Technische Univ Dresden, Research Center Rossendorf, Dresden, GERMANY; F. M. Haggag, Oak Ridge National Laboratory, Oak Ridge, TN.
SESSION B11/II24: POSTER SESSION:
RADIATION EFFECTS IN CERAMICS, GLASSES, AND NUCLEAR WASTE MEDIA
Chairs: John K. Bates and Linn W. Hobbs
Wednesday Evening, December 4, 1996
8:00 P.M.
America Ballrom (W)
B11.1/II24.1
DEFECT EVOLUTION IN NANOSTRUCTURED MATERIALS DURING IRRADIATION, Michael Rose, Technische Univ Darmstadt, Dept of Materials Science, Darmstadt, GERMANY; Adam G. Balogh, Technische Hochschule Darmstadt, Dept of Matls Science, Darmstadt, GERMANY; Horst Hahn, Technische Univ Darmstadt, Dept of Materials Science, Darmstadt, GERMANY.
B11.2/II24.2
MOLECULAR DYNAMICS SIMULATION OF THE TRAJECTORY OF A RECOIL NUCLEUS IN A SIMPLIFIED NUCLEAR GLASS, J.-M. Delaye, CEA Saclay, OTA-SRMP, Gif-sur-Yvette, FRANCE; D. Ghaleb, CEA Saclay, Dept of DCC-SCD, Bagnls sur Ceze, FRANCE.
B11.3/II24.3
TRACK FORMATION BY SWIFT HEAVY IONS IN THE ELECTRONIC STOPPING REGIME, Gyorgy Szenes, Eotvos Univ, Inst for General Physics, Budapest, HUNGARY.
B11.4/II24.4
EFFECT OF RADIATION ON TOPOPAH SPRING TUFF MECHANICAL PROPERTIES, Patricia A. Berge, Lawrence Livermore National Laboratory, Env Prog Dir, Livermore, CA; Stephen C. Blair, Lawrence Livermore National Laboratory, Dept of Env Prog Dir, Livermore, CA.
B11.5/II24.5
FORMATION OF ALKALI METAL LAYERS AT THE SURFACE OF ELECTRON-IRRADIATED ALKALI HALIDES, Ernesto Paparazzo, CNR, Inst di Struttura della Materia, Frascati, ITALY; Nicola Zema, CNR, Frascati, ITALY; Luciano Moretto, CNR, Istituto di Struttura della Ricerche, Frascati, ITALY.
B11.6/II24.6
THEORY OF DIFFUSION-CONTROLLED POINT DEFECT AGGREGATION DURING IRRADIATION, Eugene Kotomin, V. N. Kuzovkov, Inst of Solid State Physics, Riga, LATVIA.
B11.7/II24.7
TEM STUDY ON ALPHA-DECAY DAMAGE IN AESCHYNITE, Wei-Liang Gong, Lu-Min Wang, Univ of New Mexico, Dept of Earth & Planetary Science, Albuquerque, NM; Rodney C. Ewing, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM; Werner Lutze, Univ of New Mexico, Dept of Chemistry & Nuclear Engr, Albuquerque, NM.
B11.8/II24.8
HIGH VOLTAGE ELECTRON MICROSCOPY INVESTIGATION IN SITU OF RADIATION INDUCED AMORPHIZATION OF QUARTZ, Olga V. Sayapina, N. S. Kostyukov, Technological Univ, Blagoveschensk, RUSSIA; V. A. Yermishkin, Inst for Metallurgy, Moscow, RUSSIA; Vladimir M. Koshkin, Polytechnic Univ, Dept of Physical Chemistry, Kharkov, UKRAINE.
B11.9/II24.9
FORMATION OF POINT DEFECTS IN OXIDE GLASSES DURING THE BOMBARDMENT OF THEIR SURFACE WITH HEAVY CHARGE PARTICLES, Lidia D. Bogomolova, Moscow State Univ, Dept of Physics, Moscow, RUSSIA; Sergey V. Stefanovsky, Yury G. Teplyakov, SIA Radon, Research Center of Geoecology, Moscow, RUSSIA.
B11.10/II24.10
THERMAL NEUTRON IRRADIATION OF
CRYSTALS DOPED WITH Hf AND Hf,Mg, Jose G. Marques, J. C. Soares, Univ de Lisboa, Centro de Fisica Nuclear, Lisboa , PORTUGAL; Ernesto Dieguez, F. Agullo-Lopez, Univ Autonoma de Madrid, Fisica de Materiales, Madrid, SPAIN.
B11.11/II24.11
POST BOMBARDMENT ENHANCED OPTICAL ABSORPTION IN GOLD-IMPLANTED SUPRASIL SILICA , Daryush Ila, Z. Wu, Alabama A&M Univ, Ctr for Irradiation of Materials, Normal, AL; Christine A. Smith, Univ of California-Davis, Dept of CE&MS, Davis, CA; David B. Poker, Oak Ridge National Laboratory, Oak Ridge, TN; D. K. Hensley, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
B11.12/II24.12
RADIATION EFFECT OF
/Ag SAMPLES IRRADIATED WITH
Co GAMMA RAYS AT DIFFERENT DOSES, Ricardo Rangel-Segura, UNAM, Dept of Materials , Ensenada, MEXICO; A. Duarte, D. H. Galvan, M. Avalos-Borja, E. Adem, UNAM, Inst de Fisica, Ensedada, MEXICO; M. de Andrade, M. B. Maple, Univ of California-San Diego, Dept of Physics/IPAPS, La Jolla, CA.
B11.13/II24.13
EFFECT OF 1.25 MeV GAMMA-RADIATION ON INTERGRAIN LINKS OF
CERAMICS, Elvira M. Ibragimova, Eldar M. Gasanov, Anatoly F. Nebesny, Anatoly N. Yashin, Inst of Nuclear Physics, Tashkent, UZBEKISTAN.
B11.14/II24.14
NONINVASIVE MECHANICAL CHARACTERIZATION OF NEUTRON-IRRADIATED POLYMERIC INSULATION MATERIALS
, Randy J. Logan, MIT, Dept of Chemistry, Cambridge, MA; Janez Megasur, MIT, Materials Processing Ctr, Cambridge, MA; Keith A. Nelson, Alex A. Maznev, MIT, Dept of Chemistry, Cambridge, MA.
SESSION B12: BEAM - INDUCED EFFECTS
Chairs: William J. Weber and J. M. Williams
Thursday Morning, December 5, 1996
America North (W)
8:30 AM *B12.1
IRRADIATION SPECTRUM AND IONIZATION ENHANCED DIFFUSION EFFECTS IN CERAMICS, S. J. Zinkle, Oak Ridge National Laboratory, Metals & Ceramics Div, Oak Ridge, TN.
9:00 AM B12.2
PARTICLE-INDUCED AND PHOTO- CONDUCTIVITIES IN
AMORPHOUS Si:H UNDER PROTON IRRADIATION, Naoki Kishimoto, Kenichiro Kono, Hiroshi Amekura, Nat Research Inst for Metals, High Resolution Beam Research Station, Ibaraki, JAPAN.
9:15 AM B12.3
ELECTRON BEAM DRIVEN DISORDERING IN SMALL PARTICLES, Richard R. Vanfleet, J. M. Mochel, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL.
9:30 AM B12.4
DETERMINATION OF THE ELECTRON BEAM-INDUCED SHRINKAGE RATES OF ISOLATED AMORHOUS ZONES IN SEMICONDUCTORS, Igor Jencic, Jozef Stefan Inst, Ljubljana, SLOVENIA; Ian M. Robertson, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL; Jure Skvarc, Jozef Stefan Inst, Ljubljana, SLOVENIA.
9:45 AM B12.5
ELECTRON-BEAM-INDUCED CRYSTALLIZATION OF AMORPHOUS LaPO
AND ScPO
, Al Meldrum, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM; Rodney C. Ewing, Univ of New Mexico, Dept of Earth & Planetary Sciences, Albuquerque, NM; Lynn Boatner, Oak Ridge National Laboratory, Oak Ridge, TN.
10:00 AM B12.6
A UNIFIED PICTURE FOR SIZE-DEPENDENT EVOLUTION OF SMALL CRYSTALS IN Si UNDER ION IRRADIATION, Chih M. Yang, California Inst of Technology, Dept of Materials Science, Pasadena, CA; Harry A. Atwater, California Inst of Technology, Dept of Applied Physics, Pasadena, CA.
10:15 AM BREAK
10:30 AM B12.7
INCUBATION DOSE FOR ANISOTROPIC GROWTH OF AMORPHOUS ALLOYS UNDER HIGH ENERGY HEAVY ION BOMBARDMENT, Alexander Ryazanov, RRC Kurchatov Inst, Dept of Nuclear Physics, Moscow, RUSSIA; H. Trinkaus, Forschungszentrum Julich, IFF, Julich, GERMANY.
10:45 AM B12.8
TEMPERATURE DEPENDENCE OF ION IRRADIATION-INDUCED VISCOUS FLOW IN SILICA, Mark L. Brongersma, FOM Inst, AMOLF, Amsterdam, NETHERLANDS; Albert Polman, FOM Inst, Amsterdam, NETHERLANDS; Edwin Snoeks, Philips Research Laboratories, Briarcliff Manor, NY.
11:00 AM B12.9
MICROSTRUCTURE EVOLUTION OF DIAMOND DURING ELECTRON IRRADIATION, Lu-Chang Qin, Sumio Iijima, NEC Corporation, Fundamental Research Lab, Ibaraki, JAPAN.
11:15 AM B12.10
A STM AND AFM STUDY OF THE EFFECTS OF 1.8 MeV ELECTRON BOMBARDMENT ON THE SURFACE OF GRAPHITE, Y. J. Chen, Chinese Univ of Hong Kong, Electronic Engineering Devision, Shatin NT, HONG KONG; I. H. Wilson, Chinese Univ of Hong Kong, Dept of Electrical Engr, Shatin NT, HONG KONG; Libin Lin, Chinese Univ of Hong Kong, Dept of Physics, Chengdu, CHINA; J. B. Xu, Chinese Univ of Hong Kong, Dept of Electrical Engr, Shatin NT, HONG KONG.
11:30 AM B12.11
ELECTRON AND X-RAY PHOTON RADIATION EFFECTS ON SURFACES OF LEAD SILICATE GLASSES, Paul Wang, Univ of Texas-El Paso, Dept of Physics, El Paso, TX.
11:45 AM B12.12
RADIATION EFFECTS OF VACUUM ULTRAVIOLET LASER PHOTONS ON SILICON DIOXIDE, Kou Kurosawa, Univ of Toronto, Dept of Electrical Engr, Toronto, CANADA; Peter R. Herman, Univ of Toronto, Dept of ECE, Toronto, ON; Ernst Z. Kurmaev, Sergei N. Shamin, V. E. Galakhov, Inst of Metal Physics, RAS, Ekaterinburg , RUSSIA; Yasuo Takigawa, Osaka Electro-Communication Univ, Solid State Electronics, Osaka, JAPAN; Wataru Sasaki, Miyazaki Univ, Dept of Elect & Electronic Engr,; Atsushi Yokotani, Miyazaki Univ, Dept of Electrical & Electronic Engr.