Symposium L—Diagnostic Techniques For Semiconductor Materials Processing

Chairs

Orest J. Glembocki, Naval Research Laboratory
Stella W. Pang, University of Michigan
Fred H. Pollak, Brooklyn College
Francis Celii, Texas Instruments, Inc.
Clivia M. Sotomayor Torres, University of Glasgow

Symposium Support

• TopoMetrix Instruments
• SA, Incorporated
• MKS Instruments Incorporated
• Plasma Therm Industrial Products Incorporated

*Invited Paper

SESSION L1: IN-SITU PLASMA DIAGNOSTICS I
Chairs: G. Selwyn and G. Luckovsky
Monday Morning, November 27
Essex West (W)

8:30 A.M. *L1.1
OPTICAL AND MASS SPECTROMETRIC DIAGNOSTIC METHODS FOR PLASMA ETCHING, V.M. Donnelly, AT&T Bell Laboratories, Murray Hill, NJ.

9:00 A.M. L1.2
RESPONSE TIME FOR OPTICAL EMISSION AND MASS SPECTROMETRIC SIGNALS DURING ETCHING OF HETEROSTRUCTURES, S. Thomas III, E. Berg and S. W. Pang, University of Michigan, Department of Electrical Engineering, Ann Arbor, MI.

9:15 A.M. L1.3
MONITORING OF DIRECT REACTIONS DURING ETCHING OF Si, K.P. Giapis, California Institute of Technology, Chemical Engineering, Pasadena, CA; and T.K. Minton, Montana State University, Division of Chemical and Biochemistry, Bozeman, MO.

9:30 A.M. L1.4
MONITORING OF THE INTERMEDIATE PRODUCTS IN THE THERMAL DECOMPOSITION OF SiH4, Si2H6, SiF4 AND SiH2F2, Jae Hyun Han, Hyun-Kyu Ryu and Sang Heup Moon, Seoul National University, Department of Chemical Engineering, Seoul, Korea.

9:45 A.M. L1.5
DIAGNOSTIC TECHNIQUES FOR POLYCRYSTALLINE THIN FILM GROWTH, Tri-Rung Yew, National Tsing-Hua University, Materials Science Center, Hsinchu, Taiwan.

10:00 A.M. BREAK

10:30 A.M. *L1.6
DIAGNOSTICS AND CONTROL OF HIGH-DENSITY ETCHING PLASMAS, Hideo Sugai, Keiji Nakamura, Tae Hyuk Ahn and Michio Nakamura, Nagoya University, Department of Electrical Engineering, Nagoya, Japan.

11:00 A.M. L1.7
HIGH DENSITY PLASMA DIAGNOSTICS FOR PREDICTIVE MODEL DEVELOPMENT, C.R. Eddy Jr., Naval Research Laboratory. Washington, DC.

11:15 A.M. L1.8
TWO-DIMENSIONAL GAS PHASE COMPOSITIONAL MAPPING IN RF PLASMAS BY PLANAR LASER-INDUCED FLUORESCENCE, Kristen L. Steffens, Michael R. Zachariah, National Institutes of Standards and Technology, Gaithersburg, MD; and Brian K. McMillin, Lam Research Corporation, Fremont, CA.

11:30 A.M. L1.9
CHARACTERIZATION OF NITROGEN SPECIES FOR P-TYPE DOPING OF ZnSe, K. Kimura, S. Miwa, T. Yasuda, L-H. Kuo, C. Jin, H. Kajiyama, K. Tanaka and T. Yao, Joint Research Center for Atom Technology, Ibaraki, Japan.

11:45 A.M. L1.10
HYDROGEN-ADDED REMOTE PLASMA ENHANCED CHEMICAL- VAPOR DEPOSITION (RPECVD) OF HYDROGENATED AMORPHOUS SILICON NITRIDE (a-Si:N:H) FILMS, K. Koh, P. Santos-Filho, G. Stevens and G. Lucovsky, North Carolina State University, Department of Materials Science and Engineering, Physics and Electrical and Computer Engineering, Raleigh, NC.

SESSION L2: IN-SITU PLASMA DIAGNOSITCS III
Chairs: S.H. Sugai and V. Donnelly
Monday Afternoon, November 27
Essex West (W)

1:30 P.M. *L2.1
IN-SITU DIAGNOSTIC TECHNIQUES FOR MEASUREMENT AND IMPROVEMENT OF PARTICULATE CONTAMINATION AND PROCESS UNIFORMITY IN PLASMA PROCESSING, G.S. Selwyn, Los Alamos National Laboratory, Physics Division, Los Alamos, NM.

2:00 P.M. L2.2
PROCESS DIAGNOSTICS FOR REMOTE PLASMA-ENHANCED CHECMICAL-VAPOR DEPOSITION OF SILICONES NITRIDES, A. Banerjee and G. Lucovsky, North Carolina State University, Department of Materials Science and Engineering, Physics and Electrical and Computer Engineering, Raleigh, NC.

2:15 P.M. L2.3
PRECISION REAL-TIME, NON-INVASIVE TEMPERATURE MEASUREMENT BY DIFFUSE REFLECTANCE SPECTROSCOPY, Thomas P. Pearsall, University of Washington, Department of Materials Science, Seattle, WA; Zhongzhe Wang, University of Washington, Department of Physics, Seattle, WA; B. T. Beard and J. Booth, Thermionics, NW, Port Townsend, WA.

2:30 P.M. L2.4
IN-SITU FIBEROPTIC THERMOMETRY MEASUREMENTS OF WAFER TEMPERATURE DURING PLASMA ETCHING USING AN ELECTRON CYCLOTRON RESONANCE SOURCE, S. Thomas III, E. Berg and S. W. Pang, University of Michigan, Department of Electrical Engineering, Ann Arbor, MI.

2:45 P.M. L2.5
SIMULTANEOUS SPATIALLY RESOLVED MULTISPECTRAL OPTICAL EMISSION OF SPUTTER PROCESSES, J.D. Klein and S.L. Clauson, EIC Laboratories, Norwood, MA.

3:00 P.M. BREAK

3:30 P.M. *L2.6
OPTICAL DIAGNOSTICS OF SEMICONDUCTOR MANUFACTURING PROCESSES, S.R.J. Brueck, University of New Mexico, Center for High Technology Materials, Albuquerque, NM.

4:00 P.M. L2.7
CHARACTERIZATION OF COMPOSITIONAL GRADIENTS IN AMORPHOUS SEMICONDUCTOR SOLAR CELLS BY REAL TIME SPECTROELLIPSOMETRY, Sangbo Kim, J.S. Burnham, Joohyun Koh, Yeeheng Li, Hongyue Liu, Yiwei Lu, C.R. Wronski and R.W. Collins, Pennsylvania State University, Materials Research Laboratory, University Park, PA.

4:15 P.M. L2.8
A FAST ALGORITHM FOR REAL TIME ETCH RATE MEASUREMENT USING SINGLE OR MULTIPLE WAVELENGTH REFLECTOMETRY, Tyrone L. Vincent, Pramod P. Khargonekar and Fred L. Terry Jr., University of Michigan, Department of EECS, Ann Arbor, MI.

4:30 P.M. L2.9
OPTICAL SECOND HARMONIC GENERATION METHOD FOR SILICON MATERIAL MONITORING AND CHARACTERIZATION DURING ION IMPLANTATION AND ANNEALING PROCESSES, Y. Gu, Y.C. Chou, T. Vu, K. Yeh and G.P. Li, University of California, Department of Electrical and Computer Engineering, Irvine, CA.

4:45 P.M. L2.10
THREE-DIMENSIONAL ACTIVE GRATINGS FOR LIGHT EMITTING DEVICES: PREPARATION AND ASSESSMENT, S. Romanov, A. Fokin, V. Butko, A.F. Ioffe Physical Technical Institute, St. Petersburg, Russia; C.M. Sotomayor Torres, N.P. Johnson, University of Glasgow, Department of Electronics and Electrical Engineering, Glasgow, United Kingdom; H. Yates and M.E. Pemble, UMIST, Department of Chemistry, Manchester, United Kingdom.

SESSION L3: PROXIMAL PROBE MICROSCOPIES
Chair: J.A. Dagata
Tuesday Morning, November 28
Essex West (W)



9:00 A.M. *L3.1
CHARACTERIZATION OF MATERIALS AND DEVICES BY NEAR FIELD OPTICAL SCANNING MICROSCOPY, B.B. Goldberg, H.F. Ghaemi, M.S. Ünlü and W.D. Herzog, Boston University, Department of Physics and Center for Photonics Research, Boston, MA.

9:30 A.M. L3.2
NEAR FIELD SCANNING OPTICAL MICROSCOPY AND SPECTROSCOPY OF ELECTRONIC MATERIALS AND DEVICES, Walter M. Duncan, Texas Instruments Incorporated, Dallas, TX.

9:45 A.M. L3.3
IMAGING OF SILICON CARRIER DYNAMICS WITH NEAR-FIELD SCANNING OPTICAL MICROSCOPY, A.H. La Rosa, B.I. Yakobson and H.D. Hallen, North Carolina State University, Department of Physics, Raleigh, NC.

10:00 A.M. L3.4
ARM/STM INVESTIGATION OF LOW TEMPERATURE CRYSTALLINE SILILCON GROWN ON POLY-Si/Si, Hsi-Lien Hsao, Kim-Chih Wang, Huey-Liang Hwang, National Tsing Hua University, Department of Electrical Engineering, Hsinchu, Taiwan; and Tri-Rung Yew, National Tsing Hua University, Materials Science Center, Hsinchu, Taiwan.

10:15 A.M. BREAK

10:45 A.M. L3.5
AFM PROBE TIP AND IMAGE RECONSTRUCTION FROM NOISY MEASUREMENTS, Heinrich Fischer and Johann Nittmann, Digital Equipment Corporation, Campusbased Engineering Center, Vienna, Austria.

11:00 A.M. L3.6
AFM ANALYSIS OF ECR CRY-ETCHED InGaP, AlInP AND AlGaP, F. Ren, W.S. Hobson, J.R. Lothian, J. Lopata, AT&T Bell Laboratories, Murray Hill, NJ; J.A. Caballero, J.W. Lee, S.J. Pearton, University of Florida, Department of Materials Science and Engineering, Gainesville, FL; and M.W. Cole, U.S. Army Research Laboratories, Ft. Monmouth, NJ.

11:15 A.M. L3.7
SINGLE CRYSTAL FINE-POSITIONING DEVICE FOR SCANNED-PROBE MICROSCOPIES, Rafael N. Kleiman, AT&T Bell Laboratories, Murray Hill, NJ.

11:30 A.M. L3.8
NANOMETER SCALE IMAGING OF CORROSION: APPLICATION OF SCANNING POLARIZATION FORCE MICROSCOPY, Qing Dai, Aerodyne Research, Inc., Billerica, MA; Jun Hu, Lawrence Berkeley Laboratory, Materials Science, Berkeley, CA; Andrew Freedman, Gary N. Robinson, Aerodyne Research, Inc., Billerica, MA; and Miquel Salmeron, Lawrence Berkeley Laboratory, Materials Science, Berkeley, CA.

11:45 A.M. L3.9
SPECTROSCOPY OF DEFECTS INDUCED BY OHMIC CONTACT PREPARATION IN GaAs PARTICLE DETECTORS, A. Castaldini, A. Cavallini, University Bologna, INFM, Department Physics, Bologna, Italy; C.del Papa, University Udine, Department of Physics INFM, Udine, Italy; C. Canali, F. Nava, University Modena, Department of Physics INFM, Modena, Italy; and C. Lanzieri, ALENIA Spa Roma, Roma, Italy.

SESSION L4: OPTICAL PROBES OF DEVICES
AND DEVICE PROPERTIES
Chairs: F. Celli and G. Bauer
Tuesday Afternoon, November 28
Essex West (W)

1:30 P.M. *L4.1
DOUBLE MODULATION AND SELECTIVE EXCITATION PHOTOREFLECTANCE FOR CHARACTERIZING QUANTUM-WELL LASER STRUCTURES, Paul M. Amirtharaj, National Institutes of Standards and Technology, Semiconductor Electronics Division, Gaithersburg, MD.

2:00 P.M. L4.2
ROOM TEMPERATURE CONTACTLESS ELECTROMODULATION CHARACTERIZATION OF WAFER-SIZED InGaAs/GaAs/GaAlAs GRINCH LASER STRUCTURES, W. Krystek, M. Leibovitch and F.H. Pollak, Brooklyn College of CUNY, Brooklyn, NY; and T. Konopelski, Semiconductor Laser International, Vestal, NY.

2:15 P.M. L4.3
FOURIER TRANSFORM ANALYSIS OF FRANZ-KELDYSH OSCILLATONS OBSERVED IN ELECTROMODULATION SPECTRA, O.J. Glembocki, R.T. Holm, U.S. Naval Research Laboratory, washington, DC; and J.A. Tuchman, Optex Communications Corporation, Rockville, MD.

2:30 P.M. L4.4
CHARACTERIZATION OF AlGaAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORS USING PHOTOREFLECTANCE AND SPECTRAL ELLIPSOMETRY, Patricia B. Smith, Tae S. Kim, Walter M. Duncan, A. Vance Ley and Nick A. Brette, Texas Instruments Incorporated, Dallas, TX.



2:45 P.M. L4.5
QUANTITATIVE PHOTOREFLECTANCE EXPERIMENTS ON INDIUM PHOSPHIDE SURFACES AND STRUCTURES, S. Hildebrandt, J. Schreiber, R. Kuzmenko, A. Gansha and W. Kircher, Martin-Luther-Universität, Fachbereich Physik, Halle (Saale), Germany.

3:00 P.M. BREAK

3:30 P.M. L4.6
LINESHAPE ANALYSIS OF INTERSUBBAND TRANSITIONS IN MULTIPLE QUANTUM WELLS, G. Gumbs, Hunter College/CUNY, Department of Physics and Astronomy, New York, NY; and D.H. Huang, Wayne State University, Department of Computer and Electrical Engineering, Detroit, MI.

3:45 P.M. L4.7
INVESTIGATION OF PASSIVATION EFFECTS IN InP HEMT LAYERS, M. Van Hove, J. Finders, K. van der Zanden, Interuniversity Microelectronics Center Leuven, Belgium; J. Geurts, Aachen University of Technology, I. Phys, Institut, Aachen, Germany; and M. Van Rossum, Interuniversity Microelectronics Center Leuven, Belgium.

4:00 P.M. L4.8
QUANTITATIVE DETERMINATION OF CHANNEL ELECTRON CONCENTRATION IN InGaAs/InAlAs HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES BY RAMAN SPECTROSCOPY, J.E. Maslar, National Institutes of Standards and Technology, Gaithersburg, MD; J.F. Dorsten, P.W. Bohn, University of Illinois, Department of Chemistry and Beckman Institute, Urbana, IL; S. Agarwala, Laboratory for Physical Sciences, College Park, MD; P. Fay, I. Adesida, University of Illinois, CCSM, MRL and Department of Electrical and Computer Engineering, Urbana, IL; C. Caneau and R. Bhat, Bellcore, Red Bank, NJ.

4:15 P.M. L4.9
ORIGIN OF THE 1.3 eV EMISSION IN InP/AlInAs/InP HETEROSTRUCTURE, T. Benyattou, M.A. Garcia Perez, S. Moneger, G. Guillot, INSA de Lyon, LPM Bat. 502, Villeurbanne, France; and J.C. Harmand, CNET Bagneux, Bagneux, France; and C. Caneau Bellcorre, Red Bank, NJ.

4:30 P.M. L4.10
EXCITON DYNAMICS IN ULTRATHIN InAs/GaAs QUANTUM-WELLS, J. Brübach, J.E.M. Haverkort, J.H. Wolter, Eindhoven University of Technology, Department of Physics, Eindhoven, Netherlands; P.D. Wang, N.N. Ledenstov and C.M. Sotomayor Torres, University of Glasgow, Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, Glasgow, United Kingdom.

4:45 P.M. L4.11
STUDY OF HEAVY DOPING IN SILICON AND SIGE LAYERS STUDIED BY PHOTOLUMINESCENCE AND PHOTOREFECTANCE, C. Bru-Chevallier, B. Trui, A. Souifi, G. Bremond, G. Guillot, INSA de Lyon, L.P.M., Villeurbanne, France; and J. Chroboczek, France Telecom CNET-CNS, Meylan, France.

SESSION L5: POSTER SESSION
Tuesday Evening, November 28
8:00 P.M.
America Ballroom (W)

L5.1 REAL-TIME OPTICAL MONITORING OF GaxIn1-xP/GaP ON SILICON HETEROSTRUCTURES, N. Dietz, U. Rossow, D.E. Aspnes and K.J. Bachmann, North Carolina State University, Department of Physics and Materials Science, Raleigh, NC.

L5.2 REAL-TIME COMPOSITION CONTROL TECHNIQUES IN A METALLORGANIC CHEMICAL VAPOR DEPOSITION PROCESS, M.S. Gaffney, University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; C.M. Reaves, University of California, Santa Barbara, Materials Department, Santa Barbara, CA; R.S. Smith, A.L. Holmes Jr., University of California, Santa Barbara, Department of Electrical and Computer Engineering, Santa Barbara, CA; and S.P. DenBaars, University of California, Santa Barbara, Materials Department, Santa Barbara, CA.

L5.3 REAL-TIME BINARY POLARIZATION MODULATION REFLECTANCE DIFFERENCE SPECTROSCOPY AND ELLIPSOMETRY, V.I. Kovalev, SPOL, Fryazino, Russia; V.A. Yakovlev, Instruments SA Incorporated, Edison, NJ.

L5.4 TEMPERATURE MEASUREMENTS USING ROTATING THERMOCOUPLE IN THE MOCVD ROTATING DISK REACTORS, A.I. Gurary, R.A. Stall, T.P. Medill, EMCORE Corporation, Somerset, NJ.

L5.5 DIAGNOSTICS OF THE PULSED LASER ASSISTED EPITAXY ON SILICON BY SHORT-WAVE TIME RESOLVED REFLECTOMETRY, K.V. Rudenko and A.A. Orlikovsky, Institute of Physics & Technology, Russian Academy of Sciences, Moscow, Russia.

L5.6 EVALUATION OF REACTION DYNAMICS OF FILM DEPOSITIONS IN PLASMA CVDs BY USING A REMOTE PLASMA CVD SYSTEM, Sunil Wickramanayaka, Ken Kitamura, Yoichiro Nakanishi and Yoshinori Hatanaka, Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan.

L5.7 SURFACE DAMAGE AND CONTAMINATION AROUND CH4/H2 REACTIVE-ION-ETCHED InP MESAS USING SiO2 AND Ti/Au MASKS, Byung-Teak Lee, Jong-Sam Park, Byoung-Chan Ahn, Eun-Sook Jeon, Chonnam National University, Department of Metallurgy, Kwangju, Korea; Juheon Ahn, Electronics and Telecommunications Research Institute (ETRI), Taejon, Korea; and Dong Ju Seo, Chosun University, Kwangju, Korea.

L5.8 LANGMUIR PROBE DIAGNOSTICS OF C2F6 PLASMA DURING SiO2/Si ETCHING, A.F. Alexandrov, A.P. Ershov, A.V. Kalinin, K.V. Rudenko, Russian Academy of Sciences, Institute of Physics and Technology, Moscow, Russia; and Y.N. Sukhanov, MSU, Physics Department, Moscow, Russia.

L5.9 A METHOD FOR SPECIES MONITORING DURING REMOTE PLASMA TREATMENTS, George Dinescu, Eugen Aldea, Daniel Bivolaru and Geavit Musa, Institute of Physics and Technology for Radiation Devices, Magurele Bucharest, Romania.

L5.10 REAL-TIME MONITORING OF GaAs(100) ETCHING BY SURFACE PHOTOABSORPITION, Joseph Eng, Hongbin Fang, Sujata Vemuri, Irving P. Herman and Brian E. Bent, Columbia University, Columbia Radiation Laboratory, Department of Applied Physics, New York, NY.

L5.11 IN SITU CHARACTERIZATION OF Si/SiO2 DRY ETCHING BY SPECTROSCOPIC ELLIPSOMETRY, J.E. Maslar and M.J. Carrier, National Institutes of Standards and Technology, Gaithersburg, MD.

L5.12 FABRICATION OF InGaAsP/InP INTEGRATED LASER WITH BUTT-COUPLED PASSIVE WAVEGUIDE USING REACTIVE ION ETCHING, J.H. Ahn, K.R. Oh, C.D. Park, S.W. Lee, J.S. Kim, H.M. Kim, K.E. Pyun, H.M. Park, Electronics and Telecommunications Research Institute, Semiconductor Division, Taejon, Korea; D.K. Kim and B.T. Lee, Chonnam National University, Department of Metallurgical Engineering, Kwangju, Korea.

L5.13 HIGH PERFORMANCE OF GETTERING IN HYDROGEN ANNEALED WAFER, Ryuji Takeda, Toshiba Ceramics Co., Ltd., R&D Center, Kanagawa, Japan; Fumio Tokuoka, Toshiba Ceramics Co., Ltd., Chemical Technology Division, Yamagata, Japan; and Kenro Hayashi, Toshiba Ceramics Co., Ltd., R&D Center, Kanagawa, Japan.

L5.14 SHALLOW JUNCTION AND CROSS CONTAMINATION MEASUREMENTS USING SURFACES SIMS AND QUADRUPOLE SIMS, Victor K.F. Chia, Stephen P. Smith, Larry Wang and Igor C. Ivanov, Charles Evans and Associates, Redwood City, CA.

L5.15 THERMAL STABILITY IN Pd-BASED CONTACTS TO p-TYPE InGaAs CHARACTERIZED BY RBS, Patrick W. Leech, Telstra Research Laboratories, Victoria, Australia; Geoffrey K. Reeves and Zhou Wei, Royal Melbourne Institute of Technology, Victoria, Australia.

L5.16 SCANNING ELECTRON MICROSCOPY (SEM), TRANSMISSION ELECTRON MICROSCOPY (TEM) AND SIMS (SECONDARY ION MASS SPECTROSCOPY) CHARACTERIZATION OF THE MORPHOLOGY OF Al BOND PADS FOR SURFACE REFLECTIVITY APPLICATIONS, Mark R. Schade, Rebecca Ai, Yvonne Stein and Thomas Anderson, Motorola SPS, SPS Communication and Signal Technologies Group, Phoenix, AZ.

L5.17 THE APPLICATION OF PHOSPHOR IMAGING SCREENS FOR THE DETERMINATION OF THE MULTI-DIMENSIONAL DISTRIBUTION OF CONTAMINATION IN SILICON WAFERS FOLLOWING NEUTRON IRRADIATION, Albert J. Filo, Craig C. Swanson and James P. Levine, Eastman Kodak Company, Analytical Technology Division, Rochester, NY.

L5.18 THE COMPLEX SIMS-INVESTIGATION OF THE SEMICONDUCTOR MATERIALS SURFACE STATE AND COMPOSITION, Mikhail V. Kremkov, Institute of Power Engineering and Automation, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan.

L5.19 SCANNING ELECTRON ACOUSTIC MICROSCOPY OF HETEROJUNCTION GaInAsSb/GaSb, Shuwei Li, Yixin Jin, Baolin Zhang, Yongqiang Ning, Tianming Zhou, Hong Jiang, Guang Yuan and Xinyi Zhang, Chang Chun Institute of Physics, Chang Chun, China.

L5.20 ACOUSTIC EMISSION FOR THE DIAGNOSTIC OF SEMICONDUCTOR STRUCTURES, Oleg V. Lyashenko and Vitaly M. Perga, National University of T. Shevchenko, Kiev, Ukraine.

L5.21 OBIC MODELLING, NUMERICAL COMPUTATION AND MEASUREMENT OF SILICON PARAMETERS IN THE PRESENCE OF DEFECTS, Filippo Barbero, Trinity College, Dublin, Ireland; Gian Mario Maggio, Politecnico di Torino, Turin, Italy; and Alan Moore, Trinity College, Dublin, Ireland.

L5.22 SURFACE RESISTANCE ANALYSIS FOR SEMICONDUCTOR DIAGNOSTICS, J.S. Martens and S. Sachtjen, Conductus, Sunnyvale, CA.


L5.23 CHARGE TRANSPORT STUDIES IN DIELECTRIC LAYERS USING COMBINED SCANNING MERCURY/KELVIN VIBRATING PROBE, V.L. Vasilenko and Ya.O. Roizin, Odessa State University, Odessa, Ukraine.

L5.24 SCANNING PROBE MICROSCOPY OF SUPERLATTICE, V.A. Fedirko and M.D. Eremchenko, Moscow State University of Technology "Stankin", Moscow, Russia.

L5.25 PROCESS INDUCED DEFECTS IN MESFET IN GaAs MMIC, G.C. Dubey, R.K. Purohit, Solid State Physics Laboratory, Delhi, India; and A.K. Sreedhar, Indian Institute of Sciences, Bangalore, India.

L5.26 ELECTRON DENSITY EFFECTS IN MODULATION SPECTROSCOPY OF LATTICE-MATCHED AND STRAINED InGaAs/InAlAs/InP HEMTs, A. Dimoulas, J. Davidow, K.P. Giapis, California Institute of Technology, Department of Chemical Engineering, Pasadena, CA; A. Georgakilas, G. Halkias and N. Kornelios, Foundation for Research and Technology-Hellas, Heraklion, Greece.

L5.27 LUMINESCENCE OF VERTICALLY ETCHED COUPLED ASYMMETRIC QUANTUM DOTS, C.M. Sotomayor Torres, University of Glasgow, Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, Glasgow, United Kingdom.

L5.28 STUDY OF SEMICONDUCTOR ALLOY BY CIRCULAR POLARIZED LUMINESCENCE IN LONGITUDINAL MAGNETIC FIELD, A. Reznitsky, S. Permogorov, A. Kornievskii, A. Kaminskii, A.F. Ioffe Physical-Technical Institute, Department of Solid State Optics, St. Petersburg, Russia; and S. Verbin, St. Petersburg University, Department of Solid State Physics, St. Petersburg, Russia.

L5.29 CHARACTERIZATION OF ZnSe:N USING SCREENING EFFECTS, I. Kuskovsky and G.F. Neumark, Columbia University, Department of Chemical Engineering, Material Science and Mining Engineering, New York, NY.

L5.30 RAMAN SPECTROSCOPIC STUDY OF ION-IMPLANTED AND ANNEALED SILICON, J.P. Lavine, D.D. Tuschel and J.B. Russell, Eastman Kodak Company, Rochester, NY.

L5.31 COMBINED ROOM TEMPERATURE PHOTOLUMINESCENCE AND HIGH RESOLUTION X-AY DIFFRACTION MAPPING OF SEMICONDUCTOR WAFERS, S. Cockerton, M.L. Cooke, D.K. Bowen and B.K. Tanner, Bede Scientific, Durham, United Kingdom.

L5.32 STEPLIKE LINESHAPE OF LOW TEMPERATURE PHOTO-REFLECTANCE SPECTRA OF InAlAs, Y. Baltagi, E. Béarzi, C. Bru-Chevallier, T. Benyattou, G. Guillot, INSA de Lyon, LPM Bat. 502, Villeurbanne, France; and J.C. Harmand, CNET Bagneux, Bagneux, France.

L5.33 CORRELATION OF CELLULAR PATTERNS IN s.i.GaAs OBTAINED BY DIFFERENT METHODS, J. Donecker, Institute of Crystal Growth, Berlin, Germany.

L5.34 THERMOELECTRIC, THERMOMAGNETIC AND GALVANOMAGNETIC PHENOMENA IN RANDOMLY INHOMOGENEOUS AND POLYCRYSTAL SEMICONDUCTORS, I.I. Fishchuk and N.D. Marchuk, National Academy of Sciences, Institute for Nuclear Research, Kiev, Ukraine.

JOINT SESSION L6/K8: X-RAY ANALYSIS TECHNIQUES
AND STRAIN MEASUREMENTS
Chairs: F.H. Pollak and T.P. Pearsall
Wednesday Morning, November 29
Essex West (W)

8:30 A.M. *L6.1/K8.1
STRUCTURAL CHARACTERIZATION OF REACTIVE ION ETCHED SEMICONDUCTOR NANOSTRUCTURES USING X-RAY RECIPROCAL SPACE MAPPING, Günther Bauer, Anton A. Darhuber and Vaclav Holy, Universität Linz, Institut für Halbleiterphysik, Linz, Austria.

9:00 A.M. L6.2/K8.2
STRAIN RELAXATION CONTROL IN AlN AND Cr FILMS DEPOSITED ON CRYSTALLINE SUBSTRATES WITH BURIED AMORPHOUS LAYER, L.Ya. Krasnobaev, Z.J. Radzimski and J.J. Cuomo, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

9:15 A.M. L6.3/K8.3
PHOTOREFLECTANCE CHARACTERIZATION OF InGaAs-AlGaAs-GaAs STRAIN-INDUCED QUANTUM WELL WIRES, M. Geddo, S. Di Lernia, A. Stella, University of Pavia, Department of Physics "A. Volta," Pavia, Italy; A. Bosacchi, S. Franchi, CNR-MASPEC Institute, Parma, Italy; M. Gentili and D. Peschiaroli, CNR-IESS Institute, Roma, Italy.

9:30 A.M. L6.4/K8.4
STRAIN RELAXATION OF SiGe ALLOYS MEASURED IN REAL TIME DURING MBE GROWTH, J.A. Floro, E. Chason and S.R. Lee, Sandia National Laboratories, Albuquerque, NM.


9:45 A.M. L6.5/K8.5
300 K INFRARED AND MICROWAVE CONDUCTIVITY OF 2D-STRESSED InSb/A1203 MONOCRYSTALLINE THIN LAYERS, A.G. Padalko, Russian Academy of Sciences Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia; V.I. Trifonov, Russian Academy of Sciences Institute for Radiotechnics and Electronics, Friazino, Russia; and O.N. Pashkova, Russian Academy of Sciences Kurnakov Institute of General and Inorganic Chemistry, Moscow, Russia.

10:00 A.M. BREAK

10:30 A.M. *L6.6/K8.6
COHERENT GRATING X-RAY DIFFRACTION (CGXD) AND ITS APPLICATIONS TO STRUCTURAL STUDIES OF NANOSTRUCTURE ARRAYS, Qun Shen, Cornell University, Cornell High Energy Synchrotron Source (CHESS), Ithaca, NY.

11:00 A.M. L6.7/K8.7
OPTICAL AND STRUCTURAL CHARACTERIZATION OF ARSENIDE/PHOSPHIDE INTERFACES FORMED BY FLOW MODULATION EPITAXY, D.T. Emerson, K.L. Whittingham, J.A. Smart and J.R. Shealy, Cornell University, School of Electrical Engineering, Ithaca, NY.

11:15 A.M. L6.8/K8.8
A NOVEL METHOD FOR DETERMINING THIN FILM DENSITY BY ENERGY-DISPERSIVE X-RAY REFLECTIVITY, William E. Wallace and Wen-li Wu, National Institute of Standards and Technology, Gaithersburg, MD.

11:30 A.M. L6.9/K8.9
COMBINE SPECTROSCOPIC ELLIPSOMETRY AND GRAZING X-RAY REFLECTANCE FOR FINE CHARACTERIZATION OF COMPLEX EPITAXIAL STRUCTURES, Pierre Boher and Jean Louis Stehle, SOPRA S.A., Bois-Colombes, France.

11:45 A.M. L6.10/K8.10
A NEW TECHNIQUE FOR DEPTH PROFILING ON A NANOMETER SCALE, Heinrich Schwenke, Joachim Knoth, Robert Guenther, Guido Wiener and Rüdiger Bormann, GKSS-Research Center, Geesthact, Germany.

JOINT SESSION L7/K9: SURFACE PROCESSING AND
PASSIVATION/STRAIN AND INTERFACIAL DEFECTS
Chairs: B.B. Goldberg and C. Hayzelden
Wednesday Afternoon, November 29
Essex West (W)

1:30 P.M. *L7.1/K9.1
SCANNED PROBE TECHNIQUES FOR THE FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR DEVICES, John A. Dagata, National Institutes of Standards and Technology, Gaithersburg, MD.

2:00 P.M. L7.2/K9.2
THE UNIFORMITY OF SURFACE PASSIVATION AFTER (NH4)S2 TREATMENT STUDIED BY NEAR-FIELD SCANNING OPTICAL MICROSCOPY, Jutong Liu and T.F. Kuech, University of Wisconsin, Department of Chemical Engineering, Madison, WI.

2:15 P.M. L7.3/K9.3
ELECTRONIC AND CHEMICAL PASSIVATION OF GaAs SURFACES USING CS2, Ju-Hyung Lee, V.A. Burrows and P.F. McMillan, Arizona State University, Department of Chemistry, Tempe, AZ.

2:30 P.M. L7.4/K9.4
CATHODOLUMINESCENCE SPECTROSCOPY FOR EVALUATION OF DEFECT PASSIVATION IN GaSb, U. Pal, J. Piqueras, University Complutense, Dpto de Fisica de Materiales, Madrid, Spain; P.S. Dutta, H.L. Bhat, Indian Institute of Science, Bangalore, India; G.C. Dubey, Vikram Kumar, Solid State Physics Laboratory, Delhi, India; and E. Diequez, University Autonoma, Dpto de Fisica de Materiales, Madrid, Spain.

2:45 P.M. L7.5/K9.5
CATHODOLUMINESCENCE STUDY OF DIFFUSION LENGTH AND SURFACE RECOMBINATION VELOCITY IN III-V MULTIPLE QUANTUM WELL STRUCTURES, L.-L. Chao, M.B. Freiler, M. Levy, J.-L. Lin, G.S. Cargill III, R. M. Osgood Jr., Columbia University, Department of Chemical Engineering, Materials Science, New York, NY; and G.F. McLane, Army Research Laboratory, Fort Monmouth, NJ.

3:00 P.M. BREAK

3:30 P.M. *L7.6/K9.6
TRANSMISSION ELECTRON DIFFRACTION TECHNIQUES FOR NM SCALE STRAIN MEASUREMENT IN SEMICONDUCTORS, J. Vanhellemont, IMEC, Leuven, Belgium; K.G.F. Janssens, KU Leuven, Department of Metallurgy and Materials Engineering, Leuven, Belgium; S. Frabboni, Universita di Modena, Dipartimento di Fisica, Modena, Italy; R. Balboni and A. Armigliato, CNR Istituto LAMEL, Bologna, Italy.



4:00 P.M. L7.7/K9.7
ANALYSIS OF LOCALIZED SMALL DEFECT IN ULSIs, K. Fukumoto, H. Maeda, Y. Mashiko, M. Sekine and H. Koyama, Mitsubishi Electric Corporation, ULSI Laboratory, Evaluation and Analysis Center, Hyogo, Japan.

4:15 P.M. L7.8/K9.8
SEM ELECTRON CHANNELING CONTRAST IMAGING OF MISFIT DISLOCATIONS IN EPITAXIAL SEMICONDUCTOR LAYERS, R.R. Keller, National Institutes of Standards and Technology, Materials Reliability Division, Boulder, CO; and J.E. Angelo, Purdue University, School of Materials Engineering, W. Lafayette, IN.

4:30 P.M. L7.9/K9.9
Ge-RELATED INTERFACIAL DEFECT IN SiGe ALLOY STRUCTURES, Patricia J. Macfarlane, Mary Ellen Zvanut, University of Alabama at Birmingham, Birmingham, AL; William E. Carlos, Mark E. Twigg and Phillip E. Thompson, Naval Research Laboratory, Washington, DC.

4:45 P.M. L7.10/K9.10
INTERFACIAL AND NEAR-SURFACE DEFECTS IN Si MATERIALS INVESTIGATED BY MOS/EBIC, H.R. Kirk, Z. Radzimski, A. Romanowski and G.A. Rozgonyi, North Carolina State University, Department of Materials Science and Engineering, Raleigh, NC.

SESSION L8: IN-SITU GROWTH DIAGNOSTICS
Chairs: P.M. Amirthraj and C.M.S. Torres
Thursday Morning, November 30
Essex West (W)

8:30 A.M. *L8.1
IN SITU OPTICAL DIAGNOSTICS AND SENSORS FOR THE STUDY AND CONTROL OF CVD, Peter Esherick, Kevin P. Killeen, Pauline Ho and William G. Breiland, Sandia National Laboratories, Chemical Processing Sciences Department, Albuquerque, NM

9:00 A.M. L8.2
SINGLE PHOTON IONIZATION, IN SITU OPTICAL DIAGNOSTIC MONITOR OF MOLECULAR BEAM EPITAXIAL GROWTH OF GAAS, Adina K. Ott, Sean M. Casey, April L. Alstrin and Stephen R. Leone, University of Colorado at Boulder and National Institute of Standards and Technology, Boulder, CO.

9:15 A.M. L8.3
OPTICAL FLUX MONITORING OF GROUP V ATOMIC SOURCES FOR MOLECULAR BEAM EPITAXY, P.D. Brewer, Hughes Research Laboratories, Malibu, CA; and K.P. Kileen, Sandia National Laboratories, Albuquerque, NM.

9:30 A.M. L8.4
DIAGNOSTICS AND OPTICAL CONTROL OF PASSIVATION AND DEPASSIVATION PROCESSES FOR III-V-SEMICONDUCTOR-(001) SURFACES, Wolfgang Richter, Ursula Resch-Esser, Kerstin Ploska, Jochen Foeller, Martin Ebert, Markus Pristovsek and Veit Wagner, Technische Universität Berlin, Berlin, Germany.

9:45 A.M. BREAK

10:00 A.M. L8.5
PHOTOEMISSION OSCILLATIONS USED FOR IN SITU MEASUREMENTS OF LAYER THICKNESSES WITH MONOLAYER RESOLUTION, J.J. Zinck and D.H. Chow, Hughes Research Laboratory, Malibu, CA.

10:30 A.M. L8.6
IN-SITU MONITORING OF THE OMVPE GROWTH OF InGaAsP FILMS BY VIS/NIR REFLECTANCE SPECTROSCOPY, A. Robertson Jr., A. Karp, AT&T Bell Laboratories, Engineering Research Center, Princeton, NJ; R.M. Lum, M.L. McDonald, J. Vandenberg, T.L. Pernell and J.C. Bean, AT&T Bell Laboratories, Murray Hill, NJ.

10:45 A.M. L8.7
IN-SITU MONITORING OF MOCVD GROWN InxAl1-xAs/GaAs EPITAXIAL LAYERS BY TWO LASER BEAM REFLECTOMETRY, Jong-Hyeob Baek, Bun Lee, Sung Woo Choi, Jin Hong Lee and El-Hang Lee, Electronics and Telecommunications Research Institute (ETRI), Taejon, Korea.

11:00 A.M. L8.8
ANALYSIS AND MODELING OF PYROMETRIC INTERFEROMETRY FOR III-V MBE GROWTH, H.P. Lee, Y. Li and D.L. Sato, University of California, Irvine, Department of Electrical and Computer Engineering, Irvine, CA.

11:15 A.M. L8.9
IN SITU CHARACTERIZATION OF Si3N4 THIN FILM USING OPTICAL FIBER, Yifei He, Lawrence J. Reinhart, Frederick S. Lauten, Brian W. Sheldon and Theodore F. Morse, Brown University, Division of Engineering, Providence, RI.

11:30 A.M. L8.10
LIGHT SCATTERING MEASUREMENT OF SURFACE TOPOGRAPHY DURING FORMATION OF TITANIUM SILICIDE, C. Lavoie, C. Cabral Jr., J.M.E. Harper, L.A. Clevenger, K.L. Saenger and F. Doany, IBM T.J. Watson Research Center, Yorktown Heights, NY.

11:45 A.M. L8.11
A NON DESTRUCTIVE MAGNETO-OPTIC STUDY: INFLUENCE OF GROWTH PARAMETERS ON INTERFACE BROADENING IN MBE-GROWN INTERFACES, Wolfgang G. Grieshaber, Axel Haury, Joel Cibert, Andre Wasiela and Yves Merle-d'Aubigne, Laboratoire de Spectrometrie Physique, Saint Martin d'Heres, France.

SESSION L9: SPECTROSCOPIC
ELLIPSOMETRY/STRUCTURAL DIAGNOSTICS
Chairs: S.W. Pang and O.J. Glembocki
Thursday Afternoon, November 30
Essex West (W)

1:30 P.M. L9.1
REAL-TIME OPTICAL MONITORING OF EPITAXIAL GROWTH PROCESSES BY P-POLARIZED REFLECTANCE SPECTROSCOPY, Nikolaus Dietz and Klaus J. Bachmann, North Carolina State University, Department of Materials Science, Raleigh, NC.

1:45 P.M. L9.2
IN SITU MULTI-WAVELENGTH ELLIPSOMETRIC CONTROL OF THICKNESS AND COMPOSITION FOR BRAGG REFLECTOR STRUCTURES, Craig Herzinger, Blaine Johs, J.A. Woollam Company, Lincoln, NE; Peter Chow, Dave Reich, Greg Carpenter, Dan Croswell and Jim Van Hove, SVT Associates, Eden Prairie, MN.

2:00 P.M. L9.3
CHARACTERISATION OF LOW TEMPERATURE THIN COPPER FILM OXIDATION USING VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY, John T. Beechinor, Mary O'Reilly and Gabriel M. Crean, National Microelectronics Research Center, Cork, Ireland.

2:15 P.M. L9.4
NON-DESTRUCTIVE CHARACTERIZATION OF RAPID THERMALLY ANNEALED N+-DOPED POLYSILICON USING SPECTROSCOPIC ELLIPSOMETRY, R.T. Carline, W.Y. Leong, A.G. Cullis, M.R. Houlton and D.A. Hope, DRA Malvern, Malvern, United Kingdom.

2:30 P.M. L9.5
CLOSED-LOOP THICKNESS CONTROL OF RESONANT-TUNNELING DIODE MBE GROWTH USING SPECTRAL ELLIPSOMETRY, F.G. Celii, Y-C. Kao, T.S. Moise and M. Woolsey, Texas Instrument Incorporated, Corporate Research and Development, Dallas, TX.

2:45 P.M. BREAK

3:00 P.M. L9.6
IN-SITU AND EX-SITU STUDIES OF SILICON INTERFACES AND NANOSTRUCTURES BY ELLIPSOMETRY AND RDS, U. Rossow, L. Mantese, North Carolina State University, Physics Department, Raleigh, NC; U. Frotscher, TU Berlin, Physics Department, Berlin, Germany; D.E. Aspnes, North Carolina State University, Physics Department, Raleigh, NC; and W. Richter, TU Berlin, Physics Department, Berlin, Germany.

3:30 P.M. L9.7
SPECTROELLIPSOMETRY STUDIES OF Zn1-xCdxSe EPILAYERS: FROM OPTICAL FUNCTIONS TO HETEROSTRUCTURE CHARACTERIZATION, Joungchel Lee, R.W. Collins, F. Flack and N. Samarth, Pennsylvania State University, Department of Physics and Materials Research Laboratory, University Park, PA.

3:45 P.M. L9.8
DOPANT QUANTIFICATION BY X-RAY ABSORPTION SPECTROSCOPY: Zn IN InP, L. Niu, R.F. Karlicek, M. Geva and P.H. Citrin, AT&T Bell Laboratories, Murray Hill and Breinigsville, PA.

4:00 P.M. L9.9
TRACE-ELEMENT ACCELERATOR MASS SPECTROMETRY: A NEW TECHNIQUE FOR LOW-LEVEL IMPURITY MEASUREMENTS IN SEMICONDUCTORS, S.A. Datar, S.N. Renfrow, F.D. McDaniel, University of North Texas, Ion-Beam Modification and Analysis Laboratory, Denton, TX; and J. M. Anthony, Texas Instruments Inc., Dallas, TX.

4:15 P.M. L9.10
SPECTROSCOPIC CHARACTERIZATION OF "BROWN" RINGS ON FUSED SILICA RESOLUTION FROM EXPOSURE TO MOLTEN SILICON, R.M. Fisher and J.D. Holbery, University of Washington, Department of Materials Science and Engineering, Seattle, WA.

4:30 P.M. L9.11
OPTICAL ANISOTROPY INDUCED BY ASYMMETRIC POPULATION OF 2x1 TERRACES ON THE CLEAN VICINAL Si(001) SURFACE -- A COMPARATIVE STUDY USING RDS/LEED/STM, Jai Ling Lin, S.G. Jaloviar, University of Wisconsin-Madison, Department of material Science, Madison, WI; L. Mantese, E.E. Aspnes, North Carolina State University, Department of Physics, Raleigh, NC; L. McCaughan and M.G. Lagally, University of Wisconsin-Madison, Material Science, Madison, WI.


4:45 P.M. L9.12
PHOTOLUMINESCENCE AND RAMAN SCATTERING FROM (CdSe)m(ZnSe)n-ZnSe MULTIPLE QUANTUM WELLS UNDER HYDROSTATIC PRESSURE, J.Q. Zhang, Z.X. Liu, Z.P. Wang, H.X. Han, G.H. Li, Institute of Semiconductors, Academia Sinica, Beijing, China; and Z.L. Peng and S.X. Yuan, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai, China.



The following exhibitors have identified their products and services as directly related to your research:

Products and Services
A&N Corporation
Advanced Control Systems Corp.
Allied High Tech Products, Inc.
ASTeX/Applied Science & Technology, Inc.
Balzers
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Commonwealth Scientific Corporation
The Cooke Corporation
Digital Instruments
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FEI Company
E.A. Fischione Instruments, Inc.
Huntington Mechanical Laboratories
IBM Analytical Services
Implant Sciences Corporation
Instron Corporation
Instruments SA, Inc./Jobin-Yvon-Spex
JCPDS-ICDD
k-Space Associates, Inc.
Lake Shore Cryotronics, Inc.
Leybold Inficon, Inc.
LUXTRON Corporation
Melles Griot
Micro Photonics, Inc.
MKS Instruments, Inc.
MMR Technologies
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Omicron Associates
Park Scientific Instruments
Philips Electronic Instruments Co.
Philips Semiconductors/Materials Analysis Group
Plasmaterials, Inc.
Princeton Gamma-Tech, Inc.
Princeton Research Instruments
Quantum Design
Rigaku/USA, Inc.
Siemens Industrial Automation, Inc.
Solartron Instruments, Inc.
SOPRA, Inc.
Staib Instruments, Inc.
Tencor Instruments
TexSEM Laboratories, Inc.
Textron Defense Systems
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See page 6 for a list of companies exhibiting books and software and a complete list of exhibitors.