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2013 MRS Spring Meeting & Exhibit

April 1-5, 2013 | San Francisco
Meeting Chairs: Mark L. Brongersma, Vladimir Matias, Rachel Segalman, Lonnie D. Shea, Heiji Watanabe

Symposium CC : Gate Stack Technology for End-of-Roadmap Devices in Logic, Power, and Memory

2013-04-02   Show All Abstracts

Symposium Organizers

Andrew C. Kummel, University of California, San Diego
John Robertson, Cambridge University
Minghwei Hong, National Taiwan University
Paul Kirsch, SEMATECH

Symposium Support

Dr. Eberl MBE-Komponenten GmbH
Omicron Nanotechnology
Picosun
CC2: III-V Passivation
Session Chairs
John Robertson
Shinichi Takagi
Tuesday PM, April 02, 2013
Moscone West, Level 3, Room 3009

2:30 AM - *CC2.01
In-situ Studies of High-k/High-mobility Materials Interfaces

Robert M Wallace 1

1University of Texas at Dallas Richardson USA

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3:00 AM - CC2.02
Calcium Titanate Ultrathin High-k Capacitors Challenging SrTiO3

Andreas Krause 1 Walter M. Weber 1 Thomas Mikolajick 1 2

1Namlab gGmbH Dresden Germany2TU Dresden Dresden Germany

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3:15 AM - CC2.03
Passivation of Single As Dimer Defect Sites on InGaAs(001)-(2x4)

Mary Edmonds 1 Tyler Kent 1 Ravi Droopad 3 Evgueni Chagarov 2 Andrew Kummel 2

1University of California, San Diego La Jolla USA2University of California, San Diego La Jolla USA3Texas State University San Marcos USA

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3:30 AM - CC2.04
Influence of Interface Treatments on MgO and Al2O3 Gate Stacks Grown by MBE

Chen-Yi Su 1 Mariela Andrea Menghini 1 Tomas Smets 1 Leander Dillemans 1 Ruben Lieten 1 Jin Won Seo 2 Jean-Pierre Locquet 1

1Katholieke Universiteit Leuven Leuven Belgium2Katholieke Universiteit Leuven Leuven Belgium

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3:45 AM - CC2.05
Near Zero Magnetic Field Spin Dependent Recombination: A New Tool for the Identification of Defect Structure and Chemistry at and near Semiconductor Dielectric Interfaces

Corey J Cochrane 1 Patrick Lenahan 1

1Penn State University Park USA

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4:00 AM - CC2
Break

4:30 AM - *CC2.06
Pre- and Post-gate Dielectric Deposition Passivation of Defects in High-k/InGaAs Gate Stacks

Paul McIntyre 1

1Stanford University Stanford USA

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5:00 AM - CC2.07
Si Interfacial Passivation Layer between InP and Al2O3 Studied by In situ XPS

Hong Dong 1 Xiaoye Qin 1 Dmitry Zhernokletov 1 Barry Brennan 1 Jiyoung Kim 1 Christopher Hinkle 1 Robert Wallace 1

1The University of Texas at Dallas Richardson USA

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5:15 AM - CC2.08
High Integrity SiO2/Al2O3 Gate Stack for Normally-off GaN MOSFET

Hiroshi Kambayashi 1 2 Takehoko Nomura 2 Hirokazu Ueda 3 Katsushige Harada 4 Yuichiro Morozumi 4 Kazuhide Hasebe 4 Akinobu Teramoto 2 Shigetoshi Sugawa 2 5 Tadahiro Ohmi 2

1Advanced Power Device Research Association Yokohama Japan2New Industry Creation Hatchery Center, Tohoku Univ. Sendai Japan3Tokyo Electron Technology Development Institute Inc. Sendai Japan4Tokyo Electron Tohoku Ltd. Yamanashi Japan5Graduate School of Engineering, Tohoku Univ. Sendai Japan

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5:30 AM - CC2.09
Effect of In situ ALD-ZnO Interfacial Passivation Layer on the Electrical Properties of ALD-HfO2 on GaAs

Young-Chul Byun 1 Chee-Hong An 1 Chandreswar Mahata 1 Hyoungsub Kim 1

1SungKyunKwan University Suwon Republic of Korea

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5:45 AM - CC2.10
Interfacial Charge Properties of Atomic Layer Deposited Dielectric/III-nitride Interfaces

Ting-Hsiang Hung 1 Michele Esposto 1 Digbijoy Neelim Nath 1 Sriram Krishnamoorthy 1 Pil Sung Park 1 Siddharth Rajan 1

1The Ohio State University Columbus USA

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CC1: III-V MOSFET Processing
Session Chairs
Andrew C. Kummel
Tuesday AM, April 02, 2013
Moscone West, Level 3, Room 3009

9:00 AM - *CC1.01
Native-oxides Free High-k Interfaces: A Synchrotron Radiation Photoemission Study

Tun-Wen Pi 1 H. Y. Lin 2 T. H. Chiang 3 Y. T. Liu 2 T. D. Lin 4 Y. C. Chang 4 G. K. Wertheim 5 J. Kwo 2 M. Hong 4

1National Synchrotron Radiation Research Center Hsinchu Taiwan2National Tsing Hua University Hsinchu Taiwan3National Taiwan University Taipei Taiwan4National Tsing Hua University Hsinchu Taiwan5Woodland Consulting Morristown USA

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9:30 AM - CC1.02
Production-worthy Process for III-V and Ge Channel Layer Transfer onto 300 mm Si Wafers Using Patterned Epitaxial Lift-off Technique

Eiko Mieda 1 Tatsuro Maeda 1 Noriyuki Miyata 1 Tetsuji Yasuda 1 Yuichi Kurashima 1 Atsuhiko Maeda 1 Hideki Takagi 1 Takeshi Aoki 2 Taketsugu Yamamoto 2 Osamu Ichikawa 2 Takenori Osada 2 Masahiko Hata 2 Arito Ogawa 3 Toshiyuki Kikuchi 3 Yasuo Kunii 3

1National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba Japan2Sumitomo Chemical Co., Ltd. Tsukuba Japan3Hitachi Kokusai Electric Inc. Toyama Japan

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9:45 AM - CC1.03
Chemical Trends and Nitrogen Passivation of Defects at Al2O3:GaAs/InAs/InP/GaSb Interfaces

Yuzheng Guo 1 Liang Lin 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

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10:00 AM - *CC1.04
MOS Interface Control in III-V/Ge Gate Stacks and the Impact on MOSFET Performance

Shinichi Takagi 1 Rui Zhang 1 Noriyuki Taoka 1 2 Rena Suzuki 1 Sang-Hyeon Kim 1 Masafumi Yokoyama 1 Mitsuru Takenaka 1

1The University of Tokyo Tokyo Japan2Nagoya University Nagoya Japan

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10:30 AM - CC1.05
High-k Dielectric/InGaAs MOSCAPs with EOTs of 0.5 nm and Low Interface Trap Densities

Varistha Chobpattana 1 Junwoo Son 1 Jeremy Law 1 Cheng-Ying Huang 2 Mark Rodwell 2 Arthur Gossard 1 Susanne Stemmer 1

1University of California, Santa Barbara Santa Barbara USA2University of California, Santa Barbara Santa Barbara USA

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10:45 AM - CC1.06
Rare Earth Oxides on GaAs (111)A - Thermal Stability, Structural, Electronic, and Electrical Properties

Tsung-Hung Chiang 1 Shao-Yun Wu 1 Hsiao-Yu Lin 2 Bor-Rong Chen 1 Chun-An Lin 2 Yu-Kai Su 1 Tun-Wen Pi 3 Chia-Hung Hsu 3 J.Raynein Kwo 2 Ming-Hwei Hong 4

1National Tsing Hua University Hsinchu Taiwan2National Tsing Hua University Hsinchu Taiwan3National Synchrotron Radiation Research Center Hsinchu Taiwan4National Taiwan Univ. Taipei Taiwan

Show Abstract

11:00 AM - CC1
Break

11:30 AM - *CC1.07
Interfacial Properties of High k Gate Dielectrics on High Carrier Mobility Semiconductors

J. Raynien Kwo 1

1National Tsing Hua University Hsinchu Taiwan

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12:00 PM - CC1.08
The Characteristic Features of Capacitance and Conductance for Surface Inversion in In0.53Ga0.47As MOS Capacitors

Eamon O'Connor 1 Scott Monaghan 1 Karim Cherkaoui 1 Ian Povey 1 Brendan Sheehan 1 Paul Hurley 1

1Tyndall National Institute Cork Ireland

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12:15 PM - CC1.09
Electrical and Physical Characterization on the Effect of Post Deposition Treatments on HfO2 on Epi-ready In0.53Ga0.47As

Wilfredo Cabrera 1 Terrance O'Regan 2 Ian M. Povey 3 Barry Brennan 1 Eamon O'Connor 3 Scott Monaghan 3 Robert M. Wallace 1 Paul K. Hurley 3 Yves J. Chabal 1

1The University of Texas at Dallas Dallas USA2U.S. Army Research Laboratory Ft. Sam Houston USA3Tyndall National Institute Cork Ireland

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12:30 PM - CC1.10
Development of AlAsSb as Barrier Material for sub-10-nm Lg InGaAs Channel nMOSFETs

Cheng-Ying Huang 1 Jeremy J. M. Law 1 Hong Lu 2 Mark J. W. Rodwell 1 Arthur C. Gossard 1 2

1UC Santa Barbara Santa Barbara USA2UC Santa Barbara Santa Barbara USA

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12:45 PM - CC1.11
Highly Conductive InAs Nanowire Vertical Transistors on Si

Katsuhiro Tomioka 1 2 Masatoshi Yoshimura 1 Takashi Fukui 1

1RCIQE and GS of IST Sapporo Japan2JST-PRESTO Saitama Japan

Show Abstract

2013-04-03   Show All Abstracts

Symposium Organizers

Andrew C. Kummel, University of California, San Diego
John Robertson, Cambridge University
Minghwei Hong, National Taiwan University
Paul Kirsch, SEMATECH

Symposium Support

Dr. Eberl MBE-Komponenten GmbH
Omicron Nanotechnology
Picosun
CC4: MOSFET Part II
Session Chairs
Minghwei Hong
Wednesday PM, April 03, 2013
Moscone West, Level 3, Room 3009

2:30 AM - *CC4.01
ALD Gate Dielectrics for High Mobility and Tunnel Transistors

J. Mantey 1 C. Corbet 1 F. Chowdhury 1 D. Koh 1 J. Yum 1 H. Movva 1 M. Ramon 1 D. Reddy 1 L. F. Register 1 Sanjay Banerjee 1

1University of Texas-Austin Austin USA

Show Abstract

3:00 AM - CC4.02
Towards Room Temperature Ferroelectric Negative Capacitance: Material Exploration & Strain Engineering

Asif Khan 1 Jayakanth Ravichandran 3 Long You 1 Chun Yeung 1 Michelle Lee 2 Chenming Hu 1 Ramamoorthy Ramesh 2 Sayeef Salahuddin 1

1UC Berkeley Berkeley USA2UC Berkeley Berkeley USA3UC Berkeley Berkeley USA

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3:15 AM - CC4.03
Control of Schottky Barrier Heights by Inserting Thin Dielectric Layers

Huanglong Li 1 Liang Lin 1 John Robertson 1

1Cambridge University Cambridge United Kingdom

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3:30 AM - CC4.04
Reduction of Oxygen Content in Thin PVD-TiN Film and Improvement of Electrical Characteristics by Covering it with PEALD-TaCN

Fabien Piallat 1 2 3 Remy Gassilloud 2 Pierre Caubet 1 Bernard Pelissier 3 Charles Leroux 2 Christophe Vallee 3 Francois Martin 2 Sylvain Maitrejean 2

1ST Microelectronics Crolles France2CEA-LETI Grenoble France3LTM-CNRS Grenoble France

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3:45 AM - CC4.05
Nitrogen Scavenging and Oxygen Stabilization in TiAl/TiN/HfO2 Gate Stack for Advanced Gate-last Transistors

Bilel Saidi 1 2 3 Remy Gassilloud 2 Pierre Caubet 1 Florian Domengie 1 Denis Monnier 1 Virginie Beugin 2 Charles Leroux 2 Roland Pantel 1 Eugenie Martinez 2 Marc Veillerot 2 Emmanuel Nolot 2 Francois Aussenac 2 Sylvie Schamm-Chardon 3 Sylvain Maitrejean 2 Francois Martin 2 Daniel Bensahel 1

1STMicroelectronics Crolles France2CEA LETI Grenoble France3CEMES-CNRS and Universitamp;#233; de Toulouse Toulouse France

Show Abstract

4:00 AM - CC4
Break

4:30 AM - *CC4.06
Reliability Physics of Hf-based High-k Metal Gate Stacks and Implications for CMOS Technology Scaling

Eduard Albert Cartier 1

1IBM Semiconductor Research and Development Center (SRDC) Yorktown Heights USA

Show Abstract

5:00 AM - CC4.07
WITHDRAWN 4/2/13 Pulsed DC Magnetron Sputtered Rutile TiO2 Thin Films for Next Generation DRAM Capacitors

Jithin M Aravind 1 Lakshmi Ganapathi Kolla 1 2 Navakanta Bhat 1 3 Mohan Sangineni 1 Yuichiro Morozumi 4 Sanjeev Kaushal 4

1Indian Institute of Science Bangalore India2Indian Institute of Science Bangalore India3Indian Institute of Science Bangalore India4Tokyo Electron Tohoku Ltd. Oshu Japan

Show Abstract

5:15 AM - CC4.08
Theory of Wetting at the Ge/BaTiO3 Interface

Kurt D Fredrickson 1 Patrick Ponath 1 Agham Posadas 1 Alexander A Demkov 1

1The University of Texas at Austin Austin USA

Show Abstract

5:30 AM - CC4.09
Atomic Layer Deposition of Hafnium Silicate as a Scalable High-k MIM Capacitor with Low Leakage, High-breakdown Field and Improved Voltage Linearity

Ian Povey 1 Scott Monaghan 1

1Tyndall National Institute UCC Cork Ireland

Show Abstract

5:45 AM - CC4.10
Improved Nitridation of GeO2 Interfacial Layer for Ge Gate Stack Technology

P. Bhatt 1 K. Chaudhuri 1 R. Banerjee 1 A. Nainani 2 M. Abraham 2 M. Subramaniam 2 U. Ganguly 1 S. Lodha 1

1IIT Bombay Mumbai India2Applied Materials Santa Clara USA

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CC3: MOSFET Part I
Session Chairs
Andrew C. Kummel
Wednesday AM, April 03, 2013
Moscone West, Level 3, Room 3009

9:00 AM - *CC3.01
III-V 3D/4D Transistors

Peide Ye 1

1Purdue University West Lafayette USA

Show Abstract

CC5: Poster Session
Session Chairs
Wednesday PM, April 03, 2013
Marriott Marquis, Yerba Buena Level, Salons 7-8-9

9:00 AM - CC5.03
Implantation-free, High-hole-mobility p-MOSFETs Fabricated on Wafer-scale Epitaxial Ge on Si

Swapnadip Ghosh 1 Sang M Han 2 1

1University of New Mexico Albuquerque USA2University of New Mexico Albuquerque USA

Show Abstract

9:00 AM - CC5.04
The Effect of Growth Temperature and Thickness of Hafnium Oxide by Atomic Layer Deposition in CMOS Devices

Curtis D. White 1 Donovan Thomas 1 Rajini Konda 2 Aswini Pradhan 2 Messaoud Bahoura 2

1Norfolk State University Norfolk USA2Norfolk State University Norfolk USA

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9:00 AM - CC5.05
Optimization of Zirconium Aluminate Grown by Atomic Layer Deposition for CMOS Applications

Curtis D. White 1 Rajini Konda 2 Donovan Thomas 1 Aswini Pradhan 2 Messaoud Bahoura 2

1Norfolk State University Norfolk USA2Norfolk State University Norfolk USA

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9:00 AM - CC5.06
Surface Modification via D2O Plasma Surface and Cyclic Treatments to Enhance the Performance of ALD-made HfO2/La2O3/Ge MOS Devices

Ming Ho Lin 1 Hsin Wei Huang 1 Che Hao Chang 2

1National Tsing Hua University HsinChu Taiwan2Taiwan Semiconductor Manufacturing Company HsinChu Taiwan

Show Abstract

9:00 AM - CC5.07
High-performance MIM Capacitors Based on TiO2/ZrO2/TiO2 and Al2O3-doped TiO2/ZrO2/TiO2 Dielectric Stacks for DRAM Applications

Revathy Padmanabhan 1 2 Navakanta Bhat 1 2 Mohan Sangeneni 2 Yuichiro Morozumi 3 Sanjeev Kaushal 4

1Indian Institute of Science Bangalore India2Indian Institute of Science Bangalore India3Tokyo Electron Tohoku Limited Yamanashi Japan4Tokyo Electron Santa Clara Labs Santa Clara USA

Show Abstract

9:00 AM - CC5.08
Advanced High-k Gate Dielectric LaGdO3 Based MOS Devices with Sub-nanometer EOT

Shojan Pullockaran Pavunny 1 Pankaj Misra 1 Reji Thomas 1 Ashok Kumar 1 2 J. F. Scott 1 3 Ram S. Katiyar 1

1University of Puerto Rico San Juan USA Minor Outlying Islands2CSIR, National Physical Laboratory New Delhi India3University of Cambridge Cambridge CB3 OHE United Kingdom

Show Abstract

9:00 AM - CC5.11
Density-functional Theory Simulations of High-k/Ge Gate Stack Passivation

Evgueni Chagarov 1 Andrew Kummel 1

1UCSD La Jolla USA

Show Abstract

9:00 AM - CC5.13
The Impact of Amorphization and Microstructural Defects on the Activation of Si Implanted In0.53Ga0.47As

Aaron Lind 1 Nicholas Rudawski 1 Mark Ridgway 2 Christopher Hatem 3 Kevin Jones 1

1University of Florida Gainesville USA2Australia National University Canberra Australia3Varian Semiconductor Equipment Gloucester USA

Show Abstract

9:00 AM - CC5
CC5.09 TRANSFERRED TO CC3.07

Show Abstract

9:00 AM - CC5
CC5.10 Transferred to CC6.08/DD10.08

Show Abstract

9:00 AM - CC5
CC5.02 TRANSFERRED TO CC3.08

Show Abstract

CC3: MOSFET Part I
Session Chairs
Andrew C. Kummel
Wednesday AM, April 03, 2013
Moscone West, Level 3, Room 3009

9:30 AM - CC3.02
Oxygen Vacancy Formation and the Induced Defect States in Hafnium Oxides and Hafnium Silicates - A First Principles Hybrid Functional Study

Chin-Lung Kuo 1 Tsung-Ju Chen 1

1National Taiwan University Taipei Taiwan

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9:45 AM - CC3.03
Kinetics of Frenkel Defect Formation in High-k Metal Oxides from First Principles

Sergey V Barabash 1 2 Dipankar Pramanik 1 Blanka Magyari-Koepe 2 Yoshio Nishi 2

1Intermolecular, Inc San Jose USA2Stanford University Stanford USA

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10:00 AM - *CC3.04
High Performance III-V FETs for Low Power CMOS Applications

Marko Radosavljevic 1

1Intel Corp Hillsboro USA

Show Abstract

10:30 AM - CC3.05
The Chemical and Electrical Properties of ALD HfO2 on Ge Substrate MOS Capacitor with TMA Self-cleaning Surface Treatment

Min-Kyu Kim 1 Il-Kwon Oh 1 Jae-seung Lee 1 Ju-Sang Park 1 Hyungjun Kim 1

1Yonsie University Seoul Republic of Korea

Show Abstract

10:45 AM - CC3.06
The Structural and Electrical Properties of HfO2, La2O3, HfO2/La2O3 and La Doped HfO2 Dielectric on Ge Substrate by Atomic Layer Deposition

Il-kwon Oh 1 Min-Kyu Kim 1 Jae-seung Lee 1 Chang-Wan Lee 1 2 Jusang Park 1 Clement Lansalot-Matras 3 Wontae Noh 3 Hyungjun Kim 1

1Yonsei University Seoul Republic of Korea2Korea Research Institute of Chemical Technology Daejeon Republic of Korea3Air Liquide Korea Seoul Republic of Korea

Show Abstract

11:00 AM - CC3
Break

11:30 AM - CC3.07
Subcutaneous Oxidation of InGaAs Surface through Atomic Layer Deposited Al2O3

Jaesoo Ahn 1 Paul C McIntyre 1

1Stanford University Stanford USA

Show Abstract

11:45 AM - CC3.08
Impact of Threading Dislocation Density and Dielectric Layer on Device Characteristics of p-MESFETs Fabricated on Ge-on-Si Substrates

Swapnadip Ghosh 1 Sang M Han 1

1University of New Mexico Albuquerque USA

Show Abstract

12:00 PM - CC3.09
Sub-1nm EOT TiO2/Al2O3 Gate Stacks Ge-MOSFET and Impact of TiO2/Al2O3 Dipole on Ge Substrate

Liangliang Zhang 1 3 Paul C. McIntyre 2 3

1Stanford University Stanford USA2Stanford University Stanford USA3Stanford University Stanford USA

Show Abstract

12:15 PM - CC3.10
Epitaxial Growth of BaTiO3 on Ge(100)

Patrick Ponath 1 Agham Posadas 1 Kurt Frederickson 1 Alexander Kvit 2 Alex Demkov 1

1University of Texas at Austin Austin USA2University of Wisconsin at Madison Madison USA

Show Abstract

12:30 PM - CC3.11
Improvements in Atomic Layer Deposition Nucleation on Ge(100) via HOOH Dosing

Tobin Kaufman-Osborn 1 Joon Sung Lee 1 Andrew Kummel 2

1University of California, San Diego La Jolla USA2University of California, San Diego La Jolla USA

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12:45 PM - CC3.12
Identifying a Suitable Passivation Route for Ge Interfaces

Huanglong Li 1 Liang Lin 1 John Robertson 1

1University of Cambridge Cambridge United Kingdom

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2013-04-04   Show All Abstracts

Symposium Organizers

Andrew C. Kummel, University of California, San Diego
John Robertson, Cambridge University
Minghwei Hong, National Taiwan University
Paul Kirsch, SEMATECH

Symposium Support

M. Watanabe amp; Co., Ltd.
Micron Technology Foundation, Inc.
Radiant Technologies, Inc
CC7/DD12: Joint Session: Memory II
Session Chairs
Yoshihisa Fujisaki
Panagiotis Dimitrakis
Thursday PM, April 04, 2013
Moscone West, Level 3, Room 3009

2:30 AM - *CC7.01/DD12.01
Current Status of NAND Memories and Its Future Prospect with 3D NAND Technology

Tetsuo Endoh 1

1Tohoku University Sendai Japan

Show Abstract

CC8: GaN and Novel Materials
Session Chairs
Paul Kirsch
Thursday PM, April 04, 2013
Moscone West, Level 3, Room 3009

3:00 AM - CC8.01
A Comparative In situ Study of HfO2 Growth on Al0.25Ga0.75N by Atomic Layer Deposition, Electron Beam Evaporation and RF Sputtering

Xiaoye Qin 1 Barry Brennan 1 Hong Dong 1 Robert Wallace 1

1University of Texas at Dallas Richardson USA

Show Abstract

3:15 AM - CC8.02
Fixed Charge and Interface Passivation in High-k/GaN Metal-oxide Semiconductor Capacitor Structures

Junwoo Son 1 Varistha Chobpattana 2 Brian M. McSkimming 2 Susanne Stemmer 2

1POSTECH Pohang Republic of Korea2University of California Santa Barbara USA

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3:30 AM - CC8.03
Gate Leakage Mechanism and Interface (Al2O3/InAlN) Study of InAlN/GaN HEMTs

Satyaki Ganguly 1 Aniruddha Konar 1 Zongyang Hu 1 Huili Xing 1 Debdeep Jena 1

1University of Notre Dame Notre Dame USA

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3:45 AM - CC8.04
Temperature-dependent Capacitance-voltage Analysis of Defects in Al2O3 Gate Dielectric Stacks on GaN

Rathnait Long 1 Aryan Hazeghi 2 Marika Gunji 1 Yoshio Nishi 2 Paul C. McIntyre 1

1Stanford University Stanford USA2Stanford University Stanford USA

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4:00 AM - CC8
Break

4:30 AM - *CC8.05
Prospects of III-V Tunnel FETs for Logic Applications

Suman Datta 1

1Pennsylvania State University University Park USA

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5:00 AM - CC8.06
Banding Defect Formation in Stressed Ni-Gate AlGaN/GaN HEMTs

Patrick G Whiting 1 Monta Raymond Holzworth 1 Kevin S Jones 1 Lu Liu 2 Fan Ren 2

1University of Florida Gainesville USA2University of Florida Gainesville USA

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5:15 AM - CC8.07
Density-functional Theory Simulations of Amorphous High-K Oxide/GaN Interfaces

Evgueni Chagarov 1 Andrew Kummel 1

1UCSD La Jolla USA

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5:30 AM - CC8.08
Interface Defects and Band Bending of PEALD Al2O3 on GaN

Jialing Yang 1 Brianna S. Eller 1 Robert J. Nemanich 1

1Arizona State University Tempe USA

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5:45 AM - CC8.09
Structural and Electrical Properties of Epitaxial Rare-earth Based Ternary Oxides on GaN

Anna Schaefer 1 Andreas Winden 1 Willi Zander 1 Hilde Hardtdegen 1 Juergen Schubert 1

1Forschungszentrum Juelich GmbH Juelich Germany

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