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Fall 2008 Logo2008 MRS Fall Meeting & Exhibit

December 1-5, 2008 | Boston
Meeting Chairs:
 S. Ashok, Shenda M. Baker, Michael R. Fitzsimmons, Young-Chang Joo

Symposium MM : Applications of Group IV Semiconductor Nanostructures

2008-12-01   Show All Abstracts

Symposium Organizers

Tony van Buuren Lawrence Livermore National Laboratory
Leonid Tsybeskov New Jersey Institute of Technology
Susumu Fukatsu University of Tokyo
Luca Dal Negro Boston University
Fabrice Gourbilleau CIMAP, UMR CNRS
MM1: Light Emission and Photonic Devices
Session Chairs
Monday PM, December 01, 2008
Room 309 (Hynes)

9:15 AM - MM1
Opening Remarks

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9:30 AM - **MM1.1
Nanostructures for a Silicon Photonics.

Francesco Priolo 1
1 Dept. Physics & Astronomy, CNR-INFM MATIS & University of Catania, Catania Italy

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10:00 AM - MM1.2
Parametric Study of the Optical Gain in Structures Containing Silicon Nanocrystals.

Dimitri Koshel 1 , David Barba 1 , Francois Martin 1 , Guy Ross 1
1 , INRS-EMT, Varennes, Quebec, Canada

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10:15 AM - MM1.3
Time-resolved Measurements of Optical Gain in Brightly Emitting Silicon Nanocrystals Embedded at High Densities in an SiO2 Based Matrix.

Katerina Dohnalova 1 , Lukas Ondic 1 , Katerina Kusova 1 , Ondrej Cibulka 1 , Ivan Pelant 1 , Karel Zidek 2 , Frantisek Trojanek 2 , Petr Maly 2 , Bernd Honerlage 3 , Olivier Cregut 3 , Pierre Gilliot 3 , Jean Oberle 4
1 Department of Thin Films, Institute of Physics, ASCR, Prague Czechia, 2 Department of Chemical Physics and Optics, Faculty of Mathematics and Physics, Charles University, Prague Czechia, 3 GONLO, Institute de Physique et Chimie des Matériaux de Strasbourg, Strasbourg France, 4 CPMOH, Université Bordeaux 1, Talence France

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10:30 AM - **MM1.4
Si Nanostructures for Efficient, Tunable and Modulable Light Emission Devices.

Blas Garrido 1 , Olivier Jambois 1 , Josep Carreras 1 , Mariano Peralvarez 1 , Yonder Berencen 1
1 Electronics, University of Barcelona, Barcelona, Barcelona, Spain

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11:00 AM - MM1
BREAK

11:30 AM - **MM1.5
Plasmon Photodiode for On-Chip Optical Interconnect.

Keishi Ohashi 1 2 , Junichi Fujikata 1 2
1 , NEC Corporation, Tsukuba, Ibaraki, Japan, 2 , MIRAI-Selete, Tsukuba, Ibaraki, Japan

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12:00 PM - MM1.6
Modulation of Light Emission Form Si Nanocrystals by Quantum Confined Stark Effect.

Mustafa Kulakci 1 , Ugur Serincan 2 , Ceyhun Bulutay 3 , Rasit Turan 1
1 Physics, Middle East Technical University, Ankara Turkey, 2 Physics, Anadolu University, Eskisehir Turkey, 3 Physics, Bilkent University, Ankara Turkey

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12:15 PM - MM1.7
Effects of an Applied Electric Field on Silicon Nanocrystals Photoluminescence.

Alexandre Lacombe 1 , David Barba 1 , Félix Beaudoin 1 , François Martin 1 , Guy Ross 1
1 , Institut National de la Recherche Scientifique (INRS) - Énergie, Matériaux et Télécommunications (ÉMT), Varennes, Quebec, Canada

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12:30 PM - **MM1.8
Dielectric vs. Plasmonic Cavities for Si Nanostructures.

Mark Brongersma 1
1 Department of Materials Science and Engineering, Stanford University, Palo Alto, California, United States

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MM2: SiGe Nanostructures II
Session Chairs
Monday PM, December 01, 2008
Room 309 (Hynes)

2:30 PM - **MM2.1
Three-dimensional Silicon-Germanium Nanostructures for CMOS Compatible Light Emitters and Optical Interconnects.

David Lockwood 1 , Jean-Marc Baribeau 1 , Leonid Tsybeskov 2
1 Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada, 2 Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey, United States

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3:00 PM - MM2.2
Composition and Strain Contrast of Si1-xGex (x = 0.20) and Si1-yCy (y ≤ 0.012) Epitaxial Films on (100) Si in Annular Dark Field Images.

Xiaohua Wu 1 , Jean-Marc Baribeau 1
1 Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario, Canada

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3:15 PM - MM2.3
Suppression of Nonradiative Auger Recombination in Si1-xGex/Si Superlattices Under High-Density Photoexcitation.

Takeshi Tayagaki 1 , Susumu Fukatsu 2 , Yoshihiko Kanemitsu 1 3
1 Institute for Chemical Research, Kyoto University, Uji, Kyoto, Japan, 2 Department of Pure and Applied Science, The University of Tokyo, Tokyo Japan, 3 Photonics and Electronics Science and Engineering Center, Kyoto University, Kyoto Japan

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3:30 PM - MM2.4
Raman Characterization of Active Impurities in Single Boron-doped Si1-xGex Alloy Nanowires.

Chiharu Nishimura 1 , Go Imamura 1 , Takahiro Kawashima 2 , Minoru Fujii 1 , Tohru Saitoh 2 , Shinji Hayashi 1
1 , Kobe University, Kobe Japan, 2 , Matsushita Electric Industrial Co.,Ltd., Moriguchi Japan

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3:45 PM - MM2
BREAK

MM3: Si Nanostructures I
Session Chairs
Monday PM, December 01, 2008
Room 309 (Hynes)

4:15 PM - **MM3.1
Si Nanocrystals in SiO2 for Efficient Energy Management.

Dolf Timmerman 1 , Wieteke de Boer 1 , Tom Gregorkiewicz 1
1 , University of Amsterdam, Amsterdam Netherlands

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4:45 PM - MM3.2
Size Controlled Si Manocrystals: A Model Tool for Basic Understanding and Application Development.

Margit Zacharias 1 , Daniel Hiller 1 , Mihaela Jivanescu 2 , Andre Stesmans 2 3 , Stefanie Godefroo 3 , Victor Moshchalkov 3 , Manus Hayne 4
1 IMTEK, Faculty of Appl. Science, University of Freiburg, Freiburg Germany, 2 Department of Physics, University of Leuven, Leuven Belgium, 3 INPAC-Institute for Nanoscale Physics and Chemistry, K.U.Leuven, Leuven Belgium, 4 Department of Physics, Lancaster University, Lancaster United Kingdom

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5:00 PM - MM3.3
Phosphorus Donors in Silicon Nanocrystals: Doping Efficiency and Electronic Confinement.

Rui Pereira 1 2 , André Stegner 1 , Hartmut Wiggers 3 , Martin Brandt 1 , Martin Stutzmann 1
1 Walter Schottky Institut, Technische Universität München, Munich Germany, 2 Institute of Nanostructures, Nanomodeling and Nanofabrication, University of Aveiro, Aveiro Portugal, 3 Institut für Verbrennung und Gasdynamik, Universität Duisburg-Essen, Duisburg Germany

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5:15 PM - MM3.4
Surface and Shape Modification of the Electronic Structure of Silicon Nanocrystals.

Robert Meulenberg 1 , April Montoya-Vaverka 1 2 , Subhash Risbud 2 , Louis Terminello 1 , Tony van Buuren 1
1 , Lawrence Livermore National Laboratory, Livermore, California, United States, 2 , UC Davis, Davis, California, United States

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5:30 PM - MM3.5
Plasma Synthesis and Size-selected Deposition of Countable Silicon Nanoparticles.

Ingo Pluemel 1 , Klemens Hitzbleck 1 , Christof Schulz 2 , Hartmut Wiggers 2
1 Institute for Combustion and Gasdynamics, University Duisburg-Essen, Duisburg Germany, 2 Institute for Combustion and Gasdynamics and CeNIDE, University Duisburg-Essen, Duisburg Germany

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5:45 PM - MM3.6
Laser Ablation in Liquids: Applications in Synthesis of Group IV Semiconductor Nanostructures.

Guowei Yang 1
1 Physics, Zhongshan University, Guangzhou, Guangdong, China

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MM4: Poster Session
Session Chairs
Tuesday AM, December 02, 2008
Exhibition Hall D (Hynes)

9:00 PM - MM4.10
Diffusion and concentration of E-centers in SiGe.

Alexander Chroneos 1 , Robin Grimes 1 , Hartmut Bracht 2 , Chao Jiang 3 , Blas Uberuaga 3
1 Department of Materials, Imperial College London, London United Kingdom, 2 Institute of Material Physics, University of Münster, Münster Germany, 3 Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

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9:00 PM - MM4.11
Noble Photoluminescence from Ge/Si Nanocrystals Embedded in Silicon Oxide Matrix Annealed in Hydrogen Gas.

Naoki Kosaka 1 , Shin-ichiro Uekusa 1
1 School of Science and Technology, Meiji University, Kawasaki-shi Japan

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9:00 PM - MM4.12
Raman Spectroscopy of Group IV Nanostructured Semiconductors: Influence of Size, Temperature and Stress.

Oscar Martinez 1 , Carmelo Prieto 1 , Alfredo Torres 1 , Juan Jimenez 1 , Andres Rodriguez 2 , Jesus Sangrador 2 , Tomas Rodriguez 2
1 Física Materia Condensada, Universidad de Valladolid, Valladolid Spain, 2 ETSI Telecomunicación, Universidad Politécnica de Madrid, Madrid Spain

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9:00 PM - MM4.13
Colloidal Solution of Organically Capped Si Nanocrystals in Xylene: Efficient Photoluminescence in the Yellow Region.

Katerina Kusova 1 , Ondrej Cibulka 1 , Aliaksei Vetushka 1 , Katerina Dohnalova 1 , Ivan Pelant 1 , Anna Fucikova 2 , Karel Zidek 2 , Petr Maly 2 , Jan Valenta 2 , Pavel Matejka 3 , Snejana Bakardjieva 4
1 , Institute of Physics, AS CR, v.v.i., Prague 6 Czechia, 2 , Faculty of Mathematics and Physics, Charles Unversity, Prague Czechia, 3 , Institute of Chemical Technology, Prague Czechia, 4 , Institute of Inorganic Chemistry, AS CR, Rez Czechia

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9:00 PM - MM4.16
Optical Gain Measurements of Silicon Nanocrystals.

David Barba 1 , Dimitri Koshel 1 , Chabha Dahmoune 1 , François Martin 1 , Guy Ross 1
1 EMT, INRS, Varennes, Quebec, Canada

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9:00 PM - MM4.17
Intermixing During Heteroepitaxy of High Ge Content Ge(Si)/Si(100) Islands.

Sutharsan Ketharanathan 1 , Nick Jungwirth 1 , Peter Crozier 2 , Jeff Drucker 1 2
1 Dept. of Physics, Arizona State University, Tempe, Arizona, United States, 2 School of Materials, Arizona State University, Tempe, Arizona, United States

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9:00 PM - MM4.18
The Nature of Damage Cascades Produced During Heavy Ion Irradiation of Crystalline Silicon.

Philip Edmondson 1 , Duncan Riley 1 , Robert Birtcher 2 , Stephen Donnelly 1
1 Institute for Materials Research, University of Salford, Salford United Kingdom, 2 Materials Science Division, Argonne National Laboratory, Argonne, Illinois, United States

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9:00 PM - MM4.19
The Luminescence Origin for Plasma Power controlled Silicon Nitride Films Fabricated by Plasma-enhanced Chemical-vapor Deposition.

Seunghun Jang 1 , Changhun Ko 1 , Kiyoung Jeong 1 , Moonsup Han 1
1 Physics, University of Seoul, Seoul Korea (the Republic of)

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9:00 PM - MM4.2
Collective Transport in Silicon Nanocrystal Assembly Prepared by Laser Ablation Method.

Akira Sugimura 1 2 , Manabu Gibo 2 , Mitsuru Inada 3 , Tadashi Saitoh 3 , Ikuro Umezu 1 2
1 Department of Physics, Konan University, Kobe Japan, 2 Quantum Nanotechnology Laboratory, Konan University, Kobe Japan, 3 Department of Pure and Applied Physics, Kansai University, Osaka Japan

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9:00 PM - MM4.20
Controlled Blue Photoluminescence of Nanocrystalline Porous Silicon Treated by High-Pressure Water Vapor Annealing.

Bernard Gelloz 1 , Romain Mentek 1 , Kota Nishikawa 1 , Nobuyoshi Koshida 1
1 , Tokyo Univ. A&T, Tokyo Japan

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9:00 PM - MM4.21
Reduction of Threading Dislocations in Pure Ge on Si (100) Prepared by the Thermally-driven Relaxation of the Ge seed Layer.

Sang Hoon Kim 1 , Dong-Woo Suh 2 , Ji-Ho Joo 2 , Gyung-Ock Kim 2
1 MIT DevicesTeam, New Devices & Materials Research Department, Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of), 2 Silicon Photonic Module Team, RF & Optical Devices Research Department, Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of)

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9:00 PM - MM4.22
Photoluminescence Property of Nitrogen-terminated Nanocrystalline Silicon Particles Dispersed in Pure Water.

Yuichi Murata 1 , Masaki Hiruoka 1 , Keisuke Sato 2 , Kenji Hirakuri 1
1 Faculty of Science & Engineering, Tokyo Denki University, Saitama Japan, 2 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Ibaraki Japan

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9:00 PM - MM4.23
Toxicity Effect of Cancer Cell Labeled with Visible Luminescent Nanocrystalline Silicon Particles and Visualization Observation in Vivo.

Keisuke Sato 1 2 , Naoki Fukata 1 , Masaki Hiruoka 2 , Kenji Hirakuri 2 , Kohki Fujioka 3 , Kenji Yamamoto 3
1 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan, 2 Department of Electronic and Computer Engineering, Tokyo Denki University, Hatoyama, Saitama, Japan, 3 Department of Medical Ecology and Informatics, International Medical Center of Japan, Shinjuku, Tokyo, Japan

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9:00 PM - MM4.24
Controlled Assembly and Nanoscale Doping of Epitaxial Si(Ge) Quantum Dot Nanostructures.

Jeremy Graham 1 , Copeland Kell 1 , Jennifer Gray 2 , Stuart Wolf 1 , Jerry Floro 1 , Lothar Bischoff 3 , Robert Hull 1 4
1 Materials Science & Engineering, University of Virginia, Charlottesville, Virginia, United States, 2 Mechanical and Materials Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania, United States, 3 Institute of Ion Beam Physics and Materials Research, Research Center Dresden-Rossendorf Inc., Dresden Germany, 4 Materials Science & Engineering, Rensselaer Polytechnic Institute, Troy, New York, United States

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9:00 PM - MM4.25
Electronic Structure of Functionalized Diamond Clusters (Diamondoids) in the Molecular Size Limit.

Lasse Landt 1 , Matthias Staiger 1 , David Wolter 1 , Trevor Willey 2 , Jeremy Dahl 3 , Robert Carlson 3 , Andrey Fokin 4 , Peter Schreiner 4 , Thomas Möller 1 , Christoph Bostedt 1
1 , Technische Universität Berlin, Berlin Germany, 2 , Lawrence Livermore National Lab, Livermore, California, United States, 3 , MolecularDiamond Technologies, Richmond, California, United States, 4 , Justus-Liebig-Universität, Giessen Germany

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9:00 PM - MM4.26
Si Nano Dots Formation for Solar Cell Application.

Branko Pivac 1 , Pavo Dubcek 1 , Robert Slunjski 1 , Ivana Capan 1 , Nikola Radic 1 , Hrvoje Zorc 1 , Sigrid Bernstorff 2 , Branislav Vlahovic 3
1 , R. Boskovic Institute, Zagreb Croatia, 2 , Sincrotrone Trieste, Trieste Italy, 3 Physics Department, North Carolina Central University, Durham, North Carolina, United States

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9:00 PM - MM4.27
Ab initio Computationally Generated Nanoporous Carbon and its Comparison to Experiment.

Cristina Romero 1 , Ariel Valladares 1 , Alexander Valladares 2 , A. Calles 2 , R. Valladares 2
1 Materia Condensada, Instituto de Investigaciones en Materiales, UNAM, Mexico, D.F., Mexico, 2 Departamento de Fisica, Facultad de Ciencias, UNAM, Mexico, D.F., Mexico

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9:00 PM - MM4.29
Electrical Characterization of Microwave Synthesized Germanium Nanoparticle Ensembles.

Sonja Hartner 1 , Cedrik Meier 2 3 , Axel Lorke 2 3 , Hartmut Wiggers 1 3
1 Institute of Combustion and Gasdynamics, University of Duisburg-Essen, Duisburg, NRW, Germany, 2 Experimental Physics, University of Duisburg-Essen, Duisburg, NRW, Germany, 3 CeNIDE, Center for Nanointegration Duisburg-Essen, Duisburg, NRW, Germany

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9:00 PM - MM4.3
Single Crystalline Ge1-xMnx Nanowires as Building Blocks for Spintronic Devices.

Machteld van der Meulen 1 , Nikolay Petkov 1 2 , Olga Kazakova 3 , Xinhai Han 4 , Kang Wang 4 , Ajey Jacob 4 5 , Justin Holmes 1 2
1 Department of Chemistry and the Tyndall National Institute, University College Cork, Cork Ireland, 2 Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Trinity College Dublin, Dublin 2 Ireland, 3 , National Physical Laboratory, Teddington United Kingdom, 4 Department of Electrical Engineering, University of California, Los Angeles, California, United States, 5 , Western Institute of Nanoelectronics and Intel Corporation, Los Angeles, California, United States

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9:00 PM - MM4.30
Pd Segregation at Orthorhombic-NiSi/Si (010) Epitaxial Interface Studied by Density Functional Theory.

Dae-Hee Kim 1 , Hwa-Il Seo 2 , Yeong-Cheol Kim 1
1 Materials Engineering, Korea University of Technology and Education, Chonan Korea (the Republic of), 2 Information Technology, Korea University of Technology and Education, Chonan Korea (the Republic of)

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9:00 PM - MM4.32
Surface Segregation of Shallow Donors in Nanocrystalline Silicon: Density-functional Studies.

Jose Coutinho 1 , Rui Pereira 1 , André Stegner 2 , Vitor J. Torres 1 , Sven Oberg 3 , Patrick Briddon 4 , Martin Brandt 2
1 Institute of Nanostructures, Nanomodeling and Nanofabrication, University of Aveiro, Aveiro Portugal, 2 Walter Schottky Institut, Technische Universität München, Munich Germany, 3 Department of Mathematics, Luleå University of Technology, Luleå Sweden, 4 School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne United Kingdom

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9:00 PM - MM4.33
Highly Strained Dislocation-Free Si(001) Nanomembranes.

Boy Tanto 2 , Max Lagally 1 2 , Don Savage 2 , Chanan Euaruksakul 3 , Deborah Cottrill 1
2 Physics, Univ of Wisconsin Madison, Madison, Wisconsin, United States, 1 Material Science and Engineering, Univ of Wisconsin-Madison, Madison, Wisconsin, United States, 3 Electrical Engineering, Univ of Wisconsin Madison, Madison, Wisconsin, United States

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9:00 PM - MM4.34
Clustering Effects on the Luminescence from Dense Networks of Amorphous Silicon Nanoparticles.

Aaron Hryciw 1 2 , Al Meldrum 2
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Physics, University of Alberta, Edmonton, Alberta, Canada

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9:00 PM - MM4.35
Dissociation of H2O Molecule Adsorbed on Si (001) 2x1 Surface: A Theoretical Study.

Hyun-Chul Oh 1 , Hwa-Il Seo 2 , Yeong-Cheol Kim 1
1 Materials Engineering, Korea University of Technology and Education, Chonan Korea (the Republic of), 2 Information Technology, Korea University of Technology and Education, Chonan Korea (the Republic of)

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9:00 PM - MM4.36
Using New Porous Nanocomposites for Photocatalytic Water Decontamination.

Maryam Zarei Chaleshtori 1 , Geoffrey Saupe 2
1 Environmental Science and Engineering, UTEP, El Paso, Texas, United States, 2 Environmental Science and Engineering, UTEP, El Paso, Texas, United States

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9:00 PM - MM4.38
Formation and Characterization of Diamondoid Monolayers on Silicon Surfaces.

Jason Fabbri 1 , Peter Schreiner 2 , Jeremy Dahl 3 , Robert M. K. Carlson 3 , Nicholas Melosh 1
1 Materials Science and Engineering, Stanford University, Stanford, California, United States, 2 Chemistry, Justus-Liebig University Giessen, Giessen Germany, 3 , Chevron MolecularDiamond Technologies, Richmond, California, United States

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9:00 PM - MM4.39
Obstacles and Progress in Nanofabrication of High Resolution and Nanofocusing X-ray Optics Based on Silicon and Diamond.

Abdel Isakovic 1 , Kenneth Evans-Lutterodt 1 , John Warren 2 , Aaron Stein 2 , Alec Sandy 3 , Suresh Narayanan 3
1 NSLS, Brookhaven National Laboratory, Upton, New York, United States, 2 CFN, Brookhaven National Laboratory, Upton, New York, United States, 3 , Argone National Laboratory, Chicago, Illinois, United States

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9:00 PM - MM4.40
ZnS, CdS and ZnCdS Thin Films from Zn(II) and Cd(II) Complexes of 1, 1, 5, 5-Tetramethyl-2-4-dithiobiuret as Single Molecular Precursors.

Karthik Ramasamy 1 , Mohammad Malik 1 , Paul O'Brien 1
1 Chemistry, University of Manchester, Manchester United Kingdom

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9:00 PM - MM4.5
Composition Dependence of Thermoelectric Properties for Amorphous Si-Ge-Au Thin Films.

Hiroaki Takiguchi 1 , Makoto Abe 1 , Yoichi Okamoto 1 , Hisashi Miyazaki 1 , Jun Morimoto 1
1 Materials Science Engineering, National Defense Academy, Yokosuka, Kanagawa, Japan

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9:00 PM - MM4.6
Effects of Transparent SiCN Doping Layer on Performance of Si Nanocrystal Light-Emitting Diodes.

Chul Huh 1 , Kyung-Hyun Kim 1 , Jongcheol Hong 1 , Hyunsung Ko 1 , Wanjoong Kim 1 , Gun Yong Sung 1
1 , Electronics and Telecommunications Research Institute, Daejeon Korea (the Republic of)

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9:00 PM - MM4.7
Mechanical Fabrication of Si-Ge-B Bulk Samples with Superior Thermoelectric Power.

Makoto Abe 1 , Hiroaki Takiguchi 1 , Youichi Okamoto 1 , Hisasi Miyazaki 1 , Jun Morimoto 1
1 , National Defense Academy, Yokosuka, Kanagawa, Japan

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9:00 PM - MM4.8
Structural Relaxation of Voids in Si Substrates by High Temperature Hydrogen Annealing.

Reiko Hiruta 1 , Hitoshi Kuribayashi 1 , Ryosuke Shimizu 2 , Koichi Sudoh 3 , Hiroshi Iwasaki 3
1 , Fuji Electric Device Technology Co., Ltd., Nagano Japan, 2 , Fuji Electric Advanced Technology Co., Ltd., Tokyo Japan, 3 , The Institute of Scientific and Industrial Research, Osaka University, Osaka Japan

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9:00 PM - MM4.9
Surface Preparation and Thin Film Epitaxial Growth on β-FeSi2 Substrate.

Haruhiko Udono 1 , Kensuke Akiyama 2 , Masaru Itakura 3
1 , Ibaraki University, Hitachi, Ibaraki, Japan, 2 , Kanagawa Ind. Tech. Cent., Ebina, Kanagawa, Japan, 3 , Kyushyu University, Kasuga, Fukuoka, Japan

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2008-12-02   Show All Abstracts

Symposium Organizers

Tony van Buuren Lawrence Livermore National Laboratory
Leonid Tsybeskov New Jersey Institute of Technology
Susumu Fukatsu University of Tokyo
Luca Dal Negro Boston University
Fabrice Gourbilleau CIMAP, UMR CNRS
MM5: Si and Ge Nanocrystals
Session Chairs
Tuesday AM, December 02, 2008
Room 309 (Hynes)

9:30 AM - **MM5.1
Silicon and Germanium Tunneling Nanotransistors as Ultimate Switches.

Alex Zaslavsky 1
1 Division of Engineering, Brown University, Providence, Rhode Island, United States

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10:00 AM - MM5.2
Effect of Indirect-to-Direct Gap Transformation on Auger Recombination in Germanium Nanocrystals.

Istvan Robel 1 , Ryan Gresback 2 , Doh Lee 1 , Uwe Kortshagen 2 , Jeffrey Pietryga 1 , Richard Schaller 1 , Victor Klimov 1
1 Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico, United States, 2 Department of Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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10:15 AM - MM5.3
Infrared Emitting Colloidal Germanium Nanocrystals.

Doh Lee 1 , Istvan Robel 1 , Jeffrey Pietryga 1 , Richard Schaller 1 , Victor Klimov 1
1 Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico, United States

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10:30 AM - MM5.4
Size distribution of self assembled Ge nanocrystals determined by photoluminescence

Nelson Rowell 1 , David Lockwood 1 , Isabelle Berbezier 2 , Antoine Ronda 2 , Pierre Szkutnik 2 , Alim Karmous 2
1 , NRC Canada, Ottawa, Ontario, Canada, 2 , Institut Matériaux Microélectronique Nanosciences de Provence, Marseille France

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10:45 AM - MM5.5
Germanium Nanocrystal Thin Films Exhibiting Quantum Confinement.

Zachary Holman 1 , Uwe Kortshagen 1
1 Mechanical Engineering, University of Minnesota, Minneapolis, Minnesota, United States

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11:00 AM - MM5
BREAK

11:30 AM - **MM5.6
Opto-electronic Properties of Ge and Si Related Nanostructures on Ultrathin Si Oxide Covered Si Surfaces.

Masakazu Ichikawa 1
1 Department of Applied Physics, University of Tokyo, Tokyo Japan

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12:00 PM - MM5.7
Ge Quantum Dots on Si Substrate Assembled in Large Area Complex Patterns by Focused Ion Beam Nano-templating.

Maria Gherasimova 1 , Robert Hull 1 2 , Mark Reuter 3 , Frances Ross 3
1 Materials Science and Engineering, University of Virginia, Charlottesville, Virginia, United States, 2 Materials Science and Engineering, Renssselaer Polytechnic Institute, Troy, New York, United States, 3 , IBM T. J. Watson Research Center, Yorktown Heights, New York, United States

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12:15 PM - MM5.8
Self-Assembly of Ge Nanocrystals on Prepatterned Substrates and Application to Ncs Memory.

Isabelle Berbezier 1
1 Materials, IM2NP, Marseilles France

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12:30 PM - MM5.9
Preparation of Freestanding Si and Ge Nanocrystals by Ultrasonic Aerosol Pyrolysis for Next Generation Solar Conversion and Energy Storage Applications.

Michael Haag 1 , Fusheng Xu 1 , Brian Larsen 1 , Se-Hee Lee 1 , Conrad Stoldt 1
1 Mechanical Engineering, University of Colorado, Boulder, Colorado, United States

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12:45 PM - MM5.10
Photoluminescence and Optical Bleaching of Direct Band Gap Transition in Ge-on-Si.

Xiaochen Sun 1 , Jifeng Liu 1 , Lionel Kimerling 1 , Jurgen Michel 1
1 , MIT, Cambridge, Massachusetts, United States

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MM6: Diamondoids
Session Chair