Call for Papers

Please contact the symposium organizers with questions.

Research into ultra-wide-bandgap (UWBG) semiconductors continues to expand year upon year, providing new and exciting research opportunities for a diverse range of electronic, optical, sensing and quantum applications. Materials with bandgaps exceeding that of gallium nitride (3.4 eV), such as gallium oxide, diamond, cubic-boron nitride and aluminum gallium nitride are at the forefront of this new frontier of semiconductor physics research. Many of the fundamental properties of these emerging materials are still little understood however - for example, the physics of high-energy carrier scattering processes responsible for electrical breakdown. Practical challenges such as efficient n-type and p-type doping, production of large area, low defect density substrates, the formation of robust, low resistance electrical contacts and the integration of dielectric films with high quality interfaces are also yet to be sufficiently addressed to facilitate the delivery of mature, viable and cost competitive UWBG technologies. While such materials therefore hold great promise for applications ranging from optoelectronic emitters and detectors, to more compact and efficient energy converters, to higher-power high-frequency amplifiers, to advances in quantum information science, many materials and processing issues must still be resolved before such UWBG semiconductors can reach maturity and have significant impact. This symposium will cover a broad range of topics related to the materials science, device physics and processing of ultra-wide-bandgap materials, with a perspective on the applications of the materials that are driving research in the field. Topics of current interest in the more traditional wide-bandgap materials area of research will also be considered. For example, the lack of an effective means to perform selective-area doping of gallium nitride has to date imposed severe limitations on the fabrication of vertical-architecture power switching devices, and the efficiency droop problem continues to hinder solid-state lighting despite its successful and widespread commercialization.

Topics will include:

• Bulk crystals and substrates.
• Epitaxial growth
• Point, line, and planar defects
• Doping
• Novel polarization effects and utilization in devices
• Device performance and reliability
• Low-dimensional structures
• Ohmic contacts
• Gate and passivation dielectrics
• Thermal properties
• Advanced materials and device characterization techniques

Invited Speakers:

• Joan Redwing (The Pennsylvnia State University, USA)
• Xiuling Li (University of Illinois at Urbana-Champaign, USA)
• Jesús del Alamo (Massachusetts Institute of Technology, USA)
• Shizuo Fujita (Kyoto University, Japan)
• Mark Hollis (Massachusetts Institute of Technology, USA)
• Robert Kaplar (Sandia National Laboratories, USA)
• Isik Kizilyalli (U.S. Department of Energy, USA)
• Yasuo Koide (National Institute for Materials Science, Japan)
• Yoshinao Kumagai (Tokyo University of Agriculture and Technology, Japan)
• Takeya Okuno (Panasonic, Japan)
• Steve Pearton (University of Florida, USA)
• Rebecca Peterson (University of Michigan, USA)
• Huili (Grace) Xing (Cornell University, USA)
• Hangsheng Yang (Zhejiang University, China)

Symposium Organizers