In the first tutorial, Prof. Chhowalla will describe 2D TMDs, the atomic structure, crystalline phases and their electronic structure. He will provide a detailed description of how the atomic and electronic structures give rise to the observed optical and electronic properties. For example, he will describe the origins of indirect to direct band transition when going from bulk to monolayers. He will then describe how the electronic structure influences the properties of field-effect transistors and why monolayer TMDs are essential for devices. Then, he will describe how defects influence the properties of TMDs and how optical measurements are more tolerant to defects than electronic device measurements. He will conclude the tutorial by summarizing the state of the art and future outlook for the field.

In the second lecture, Prof. Kang will introduce the CVD (MOCVD) growth techniques of 2D materials. In terms of materials, graphene, transition metal chalcogenides, transition metal oxide and transition metal-oxy chalcogenides (ternary materials) will be discussed. Furthermore, this lecture will provide useful characterization methods for the CVD (MOCVD) grown 2D materials, such as dark-field TEM, wide-field Raman, etc. Lastly, state-of-the-art 2D material growth in academia as well as industry will be introduced, including the emerging field of 2D materials.