Hongyou Fan
Sandia National Laboratories
Unlike solution-based nanomaterials synthesis, the Pressure-Induced Synthesis technique uses mechanical forces to drive nanomaterials assembly at solid interfaces. This method enables precise and reversible control of nanomaterials superlattices and initiates solid-state sintering at critical pressures, creating nanostructures with tailored morphology and properties. It offers flexibility in materials engineering without relying on traditional crystallization, allowing easy tuning of structures to achieve desirable materials properties.
Sandia National Laboratories (SNL) is managed and operated by National Technology and Engineering Solutions of Sandia LLC (NTESS) under DOE NNSA Contract No. DE-NA0003525. SAND2024-12987A.
Hongyou Fan is the Head of the Geochemistry Department, the U.S. Department of Energy (DOE) Sandia Basic Energy Sciences (BES) Geoscience Program Manager, and a Distinguished Member of the Technical Staff at Sandia National Laboratories. He earned his PhD degree from The University of New Mexico and was a postdoctoral fellow at Sandia National Laboratories before transitioning to a full-time position. His research focuses on interfacial self-assembly processes and pressure-induced synthesis of novel nanomaterials with tunable properties for diverse applications in nanoelectronics, clean energy and biotechnology.
Fan is a Fellow of tje Materials Research Society (MRS), American Chemical Society (ACS), American Physical Society (APS), and the Royal Society of Chemistry (RSC). He has been honored with the MRS Medal, MRS Mid-Career Researcher Award, The Fred Kavli Distinguished Lectureship Award in Nanoscience, the Asian American Engineer of the Year Award, the Society of Asian Scientists and Engineers Career Achievement Award, the Federal Laboratory Consortium (FLC) for Technology Transfer Outstanding Researcher Award, and FLC Technology Transfer Award for co-founding Lunano LLC to commercialize disinfectant solutions. His innovations in nanomaterials synthesis and nanoelectronic applications have been recognized with six independent R&D 100 Awards.