Chairs
M. Manasreh -- USAF Phillips Laboratory
Thomas Myers -- West Virginia Univ
F. Julien -- Univ de Paris-Sud
Symposium Support
- US Air Force Phillips Laboratory (PL/LIDA)
- US Air Force Phillips Laboratory (PL/VTRP)
* Invited paper
SESSION O1: ANTIMONIDE RELATED MATERIALS AND DEVICES I
Chairs: Don McDaniel and Richard H. Miles
Monday Morning, December 2, 1996
Suffolk (M)
8:35 AM O1.
WELCOMING REMARKS AND INTRODUCTIONS.
8:45 AM *O1.1
InAsSb/InAlAsSb QUANTUM-WELL DIODE LASERS EMITTING BETWEEN 3 AND 4
m, George Turner, Hong Choi, Michael Manfra, Michael Connors, MIT Lincoln Laboratory, Electro-Optic Matls & Devices Group, Lexington, MA.
9:15 AM *O1.2
HIGH POWER InAsSb/InAsSbP LASER DIODES EMITTING AT 3-5
m RANGE, Manijeh Razeghi, Northwestern Univ, Dept of Electrical & Computer Engr, Evanston, IL.
9:45 AM BREAK
10:15 AM *O1.3
NOVEL MID-INFRARED (3-5
) LASERS WITH COMPRESSIVELY STRAINED InAsSb ACTIVE REGIONS, S. R. Kurtz, Robert M. Biefeld, A. A. Allerman, Sandia National Laboratories, Albuquerque, NM.
10:45 AM O1.4
BAND OFFSETS IN THE InAsSb/InAs SYSTEMS, Alex Zunger, Su-Huai Wei, National Renewable Energy Laboratory, Golden, CO.
11:00 AM O1.5
PREPARATION OF
AND MID-INFRARED (3-5
m) LASERS BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION, A. A. Allerman, Robert M. Biefeld, S. R. Kurtz, Sandia National Laboratories, Albuquerque, NM.
11:15 AM O1.6
LPE GROWTH OF MIXED COMPOSITION III-V ''VIRTUAL SUBSTRATES'' FOR MID-INFRARED OPTOELECTRONIC DEVICES, Youxin Mao, Lancaster Univ, Dept of Physics & Chemistry, Lancaster, UNITED KINGDOM; Tony Krier, Lancaster Univ, School of Physics & Chemistry, Lancaster, UNITED KINGDOM.
11:30 AM O1.7
GaInAsSb MATERIALS FOR THERMOPHOTOVOLTAICS, Christine Wang, MIT Lincoln Laboratory, Electro-Optic Matls & Device Group, Lexington, MA; George Turner, Hong Choi, David Spears, MIT Lincoln Laboratory, Electro-Optic Matls & Devices Group, Lexington, MA.
11:45 AM O1.8
THERMODYNAMIC ANALYSIS OF (Al,Ga)Sb/InAs INTERFACE FORMATION
IN MOLECULAR BEAM EPITAXY, Peter V. Necliudov, Boris Y. Meltser, A.F. Ioffe Phys-Technical Inst, MBE Lab, St. Petersburg, RUSSIA; Peter S. Kop'ev, A.F. Ioffe Phys-Technical Inst, MBS Lab, St Petersburg, RUSSIA; Sergey V. Ivanov, A.F. Ioffe Phys-Technical Inst, MBE Lab, St Petersburg, RUSSIA.
SESSION O2: ANTIMONIDE RELATED MATERIALS AND DEVICES II
Chairs: Michael Prairie and George Turner
Monday Afternoon, December 2, 1996
Suffolk (M)
1:30 PM *O2.1
IR SOURCES AND MODULATORS BASED ON InAs/GaSb/AlSb-FAMILY QUANTUM WELLS , Jerry R. Meyer, Naval Research Laboratory, Washington, DC; Jay I. Malin, Igor Vurgaftman, Naval Research Laboratory, Optical Sciences Div, Washington, DC; Rui Q. Yang, Univ of Houston, Space Vacuum Expitax Ctr, Houston, TX; L. R. Ram-Mohan, Worcester Polytechnic Inst, Dept of Physics, Worcester, MA; C.-H. Lin, Univ of Houston, Space Vaccuum Epitaxy Ctr, Houston, TX.
2:00 PM O2.2
ROOM TEMPERATURE LED'S FOR THE MID-INFRARED BASED ON In(As,Sb) STRAINED LAYER SUPERLATTICES, C. C. Phillips, P.J.P. Tang, M. J. Pullin, S. J. Chung, W. T. Yuen, R. A. Stradling, Y. B. Li, Imperial College, Dept of Physics, London, UNITED KINGDOM; L. Hart, Imperial College, Interdisciplinary Res Ctr for Semicon Matls, London, UNITED KINGDOM.
2:15 PM O2.3
GROWTH OF InSb ON GaAs AND Si FOR INFRARED IMAGING FOCAL PLANE ARRAYS, E. Michel, Manijeh Razeghi, Northwestern Univ, Dept of Electrical & Computer Engr, Evanston, IL.
2:30 PM BREAK
3:00 PM *O2.4
MWIR DIODE LASERS BASED ON TYPE-II SUPERLATTICES, Richard H. Miles, Thomas C. Hasenberg, Alan R. Kost, Linda West, Hughes Research Laboratories, Malibu, CA.
3:30 PM O2.5
THEORETICAL PERFORMANCE OF MID-IR BROKEN-GAP SUPERLATTICE QUANTUM WELL LASERS AND DETECTORS, Michael E. Flatte, Univ of Iowa, Dept of Physics & Astronomy, Iowa City, IA; C. H. Grein, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL.
3:45 PM O2.6
LOW-LOSS BROADENED-WAVEGUIDE HIGH-POWER 2-um AlGaAsSb/InGaAsSb/GaSb SEPARATE-CONFINEMENT QUANTUM-WELL LASERS, D. Z. Garbuzov, David Sarnoff Research Center, CN 5300, Princeton, NJ; R. U. Martinelli, H. Lee, P. K. York, R. J. Menna, J. C. Connolly, S. Y. Narayan, David Sarnoff Research Center, Princeton, NJ.
4:00 PM O2.7
THE EFFECTS OF GROWTH INTERRUPTS ON INTERFACIAL DISORDER IN InAs/GaSb HETEROSTRUCTURES, Mark E. Twigg, Naval Research Laboratory, Code 6812, Washington, DC; B. R. Bennett, P. M. Thibado, B. V. Shanabrook, L. J. Whitman, Naval Research Laboratory, Washington, DC.
4:15 PM O2.8
MBE GROWTH AND CHARACTERIZATION OF InSb/Al
In
Sb STRAINED LAYER STRUCTURES, Michael B. Santos, Wing Kwan Liu, Univ of Oklahoma, Dept of Physics & Astronomy, Norman, OK; Robert J. Hauenstein, Oklahoma State Univ, Dept of Physics, Stillwater, OK; Kory Goldammer, Weiluan Ma, Univ of Oklahoma, Dept of Physics & Astronomy, Norman, OK; Mark L. O'Steen, Oklahoma State Univ, Dept of Physics, Stillwater, OK.
4:30 PM O2.9
MBE GROWTH OF InSb BASED DEVICE STRUCTURES ONTO InSb(111)A AND
(111)B SUBSTRATES, Andrew D Johnson, Trevor Martin, Richard Jefferies, DRA Malvern, Electronics Sector, Worcester, UNITED KINGDOM.
SESSION O3: QUANTUM WELLS AND DEVICES
Chairs: F. H. Julien and Thomas H. Myers
Tuesday Morning, December 3, 1996
Suffolk (M)
9:00 AM *O3.1
OPTICALLY PUMPED INTERSUBBAND LASERS, Philipee Boucaud, Z. Moussa, S. Sauvage, Univ de Paris XI, IEF, Orsay, FRANCE; F. H. Julien, Univ de Paris-Sud, Inst d'Electronique Fondamentale, Orsay, FRANCE; V. Berger, Thomson CSF, Lab Central de Recherches, Orsay, FRANCE; J. Nagle, Thomson CSF, Laboratoire Central de Recherches, Orsay, FRANCE; R. Planel, CNET, Laboratoire de Microstructures et de Microelectronique, Bagneux, FRANCE.
9:30 AM O3.2
GRATING COUPLED INTERSUBBAND TRANSITIONS IN MICROCAVITES, Jean-Yves Duboz, Thomson CSF, Physics Lab, Orsay, FRANCE.
9:45 AM O3.3
INTERSUBBAND FAR-INFRARED EMISSION IN MULTIPLE QUANTUM WELLS, Bin Xu, Qing Hu, MIT, Dept of EE&CS, Cambridge, MA; Michael R Melloch, Purdue Univ, School of Electrical & Computer Engr, West Lafayette, IN.
10:00 AM O3.4
EMISSION EFFICIENCY IN InAs LEDs DOMINATED BY SURFACE RECOMBINATION, Michael J. Kane, Defense Research Agency, Malvern, UNITED KINGDOM; G. Braithwaite, AMG Systems Ltd, Biggleswade, UNITED KINGDOM; M. T. Emeny, D. Lee, DRA Malvern, Malvern Worcs, UNITED KINGDOM; Trevor Martin, DRA Malvern, Electronics Sector, Great Malvern WOR, UNITED KINGDOM; D. R. Wight, DRA Malvern, Malvern Worc, UNITED KINGDOM.
10:15 AM BREAK
10:45 AM *O3.5
CAVITIES FOR INTERSUBBAND TRANSITIONS, V. Berger, Thomson CSF, Lab Central de Recherches, Orsay, FRANCE; Jean-Yves Duboz, Thomson CSF, Physics Lab, Orsay, FRANCE; E. Ducloux, A. Fiore, F. Lafon, J. Nagle, I. Pavel, Thomson CSF, Laboratoire Central de Recherches, Orsay, FRANCE; Philipee Boucaud, Univ de Paris XI, IEF, Orsay, FRANCE; O. Gauthier-Lafaye, F. H. Julien, Univ de Paris-Sud, Inst d'Electronique Fondamentale, Orsay, FRANCE; R. Planel, CNET, Laboratoire de Microstructures et de Microelectronique, Bagneux, FRANCE.
11:15 AM O3.6
ASYMMETRIC QUANTUM WELLS: A NEW GAIN MEDIUM FOR OPTICAL PARAMETRIC OSCILLATORS, Ilya Lyubomirsky, Qing Hu, MIT, Dept of EE&CS, Cambridge, MA.
11:30 AM O3.7
SINGLE MODE OPERATION OF IMPURITY-INDUCED DISORDERING LARGE AREA VERTICAL CAVITY SURFACE EMITTING LASERS, Chi-Wai Lo, Univ of Hong Kong, Dept of Electrical Engr, Hong Kong, HONG KONG; Siu-Fung Yu, Univ of Hong Kong, Dept of Electrical & Electronic Engr, Hong Kong, HONG KONG.
11:45 AM O3.8
GROWTH AND CHARACTERIZATION OF
0.74) STRAINED MQW BY GAS SOURCE MOLECULAR BEAM EXPITAXY, H. C. Kuo, S. Thomas, A. P. Curtis, G. E. Stillman, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL; C. H. Lin, Haydn Chen, Univ of Illinois-Urbana, Dept of MS&E, Urbana, IL.
SESSION O4: QUANTUM INFRARED DETECTORS
Chair: M. O. Manasreh
Tuesday Afternoon, December 3, 1996
Suffolk (M)
1:30 PM *O4.1
THEORETICAL STUDIES OF ELECTRONIC INTERSUBBAND TRANSITIONS IN MULTIPLE QUANTUM WELLS FOR INFRARED PHOTODETECTOR APPLICATIONS, Danhong Huang, USAF Phillips Laboratory, Kirtland AFB, NM; M. O. Manasreh, USAF Phillips Laboratory, PL/VTRP, Kirtland AFB, NM.
2:00 PM O4.2
IR TUNNELING ABSORPTION IN SEMICONDUCTOR DOUBLE QUANTUM WELLS IN MAGNETIC FIELDS FOR TUNABLE IR DETECTORS, S. Ken Lyo, Sandia National Laboratories, 1113, Albuquerque, NM.
2:15 PM O4.3
GaInAsP/GaAs QUANTUM WELL INTRASUBBAND PHOTODETECTORS (QWIPs) FOR 8-12
m FOCAL PLANE ARRAY INFRARED IMAGING , Christopher Jelen, Northwestern Univ, Dept of EE&CS, Evanston, IL; Manijeh Razeghi, Northwestern Univ, Dept of Electrical & Computer Engr, Evanston, IL; Steven Slivken, Northeastern Univ, Dept of EE&CS, Evanston, IL; James Hoff, Northwestern Univ, Dept of EECS, Evanston, IL.
2:30 PM BREAK
3:00 PM *O4.4
INTERSUBBAND TRANSITIONS, INFRARED DETECTORS, AND OPTICAL NONLINEARITIES IN SiGe MULTIQUANTUM WELLS, Manfred Helm, Univ Linz, Dept of Halbleiterphyski, Linz, AUSTRIA.
3:30 PM O4.5
A NOVEL INFRARED SiGe/Si HETEROJUNCTION DETECTOR WITH AN ULTRATHIN
PHOSPHORUS BARRIER GROWN BY ATOMIC LAYER DEPOSITION, Rolf Banisch, Rainer Barth, Dietmar Kruger, Michael Pierschel, Klaus Pressel, Georg Ritter, Bernd Tillack, Inst for Semiconductor Physics, Frankfurt (Oder), GERMANY.
3:45 PM O4.6
MONOLITHIC INTEGRATED MSM-PD/HEMT PHOTORECEIVER ON AN IDENTICAL InP/InGaAs 2-DEG HETEROSTRUCTURE, Manfred Horstmann, Michel Marso, Klaus Schimpf, Peter Kordos, KFA Julich GmbH, ISI, Julich, GERMANY.
4:00 PM O4.7
DARK CURRENT REDUCTION IN NEAR INFRARED P-I-N DETECTORS FABRICATED FROM
GROWN BY MOLECULAR BEAM EPITAXY ON InP SUBSTRATES, Miroslav Micovic, Weizhong Cai, Yueying Ren, Theresa S. Mayer, David L. Miller, Pennsylvania State Univ, Dept of Electrical Engr, University Park, PA .
4:15 PM O4.8
GROWTH AND CHARACTERIZATION OF INTERFACES OF P-TYPE InGaAs/InP QUANTUM WELL INFRARED PHOTODETECTORS WITH ULTRA-THIN QUANTUM WELLS, Deepak Sengupta, Sangsig Kim, H. C. Kuo, S. Thomas, S. L. Jackson, K. Y. Cheung, D. Turnbull, W. Wu, A. P. Curtis, T. Horton, K. C. Hsieh, S. G. Bishop, J. R. Tucker, M. Feng, G. E. Stillman, Univ of Illinois-Urbana, Dept of Electrical & Computer Engr, Urbana, IL; Y. C. Chang, Univ of Illinois-Urbana, Dept of Physics, Urbana, IL; H. C. Liu, National Research Council, Inst for Microstructural Sciences, Ottawa, CANADA; S. D. Gunapala, California Inst of Technology, Jet Propulsion Lab, Pasadena, CA.
4:30 PM O4.9
NORMAL INCIDENCE PHOTORESPONSE AS A FUNCTION OF WELL WIDTH IN P-TYPE GaAs/AlGaAs MULTI-QUANTUM WELLS, Gail J. Brown, Air Force Wright Laboratory, WL/MLPO , Wright Patterson AFB, OH; Kurt Eyink, Air Force Wright Laboratory, Wl/MLBM Materials Directorate, Wright Patterson AFB, OH; Michael A. Capano, S. M. Hegde, Frank Szmulowicz, Air Force Wright Laboratory, WL/MLPO Materials Directorate, Wright Patterson AFB, OH.
SESSION O5: POSTER SESSION: INFRARED MATERIALS
Chairs: F. H. Julien M. O. Manasreh and Thomas H. Myers
Tuesday Evening, December 3, 1996
8:00 P.M.
America Ballroom (W)
O5.1
ADVANCES IN IR-LED TECHNOLOGY, Rainer Hovel, M. Deschler, Ditmar Schmitz, Holger Jurgensen, Aixtron GmbH, Aachen, GERMANY.
O5.2
1.5
m In
Al
Ga
As/In
Al
As DISTRIBUTED BRAGG REFLECTOR AND SINGLE CAVITY ACTIVE LAYER GROWN WITH IN SITU DOUBLE BEAM LASER REFLECTOMETRY, Jong-Hyeob Baek, Bun Lee, ETRI, Dept of Research, Taejon, KOREA; Won Seok Han, Chungnam National Univ, Dept of Physics, Taejon, SOUTH KOREA; Jin Hong Lee, El-Hang Lee, ETRI, Dept of Research, Taejon, SOUTH KOREA.
O5.3
INVESTIGATION OF INFRARED EMISSION OF HOT HOLES IN STRAINED InGaAs/GaAs MQW HETEROSTRUCTURES, Dmitry G. Revin, Inst for Physics of Microstructures, Dept of Semiconducor Physics, Nizhny Novgorod, RUSSIA; Boris N. Zvonkov, Elena A. Uskova, Nizhnii Novgorod State Univ, Dept of Semiconductor Tech, Novgorod, RUSSIA; Alexander V. Antonov, Nikolay A. Bekin, Alexander A. Andronov, Inst for Physics of Microstructures, Dept of Superconductors Physics, Novgorod, RUSSIA; Ekaterina R. Linkova, Nizhnii Novgorod State Univ, Dept of Semiconductor Tech, Novgorod, RUSSIA; Vladimir Y. Aleshkin, Inst for Physics of Microstructures, Dept of Semiconducor Physics, Nizhny Novgorod, RUSSIA; Irina G. Malkina, Nizhnii Novgorod State Univ, Dept of Semiconductor Tech, Novgorod, RUSSIA; Vladimir I. Gavrilenko, Inst for Physics of Microstructures, Dept of Superconductors Physics, Novgorod, RUSSIA.
O5.4
NUMERICAL SIMULATION OF ELECTRONIC BEHAVIOR IN A FINITE SUPERLATTICE WITH A TAMM STATE: A POSSIBLE SUBMILLIMETER WAVE EMITTER WITHOUT OPTICAL PUMPING, Oscar Hipolito, Univ de Mogi das Cruzes, Dept of Nucleo de Pesquisa Tech, Mogi das Cruzes, BRAZIL; Jose Eduardo Manzoli, Univ of Sao Paulo, San Paulo, BRAZIL.
O5.5
InGaAs MSM-PD BASED ON A 2-DEG HETEROSTRUCTURE, Manfred Horstmann, Michel Marso, Jens Muttersbach, Klaus Schimpf, Peter Kordos, KFA Julich GmbH, ISI, Julich, GERMANY.
O5.6
QUANTUM WELL INTERMIXING IN GaInAs/GaInAsP AND GaAs/AlGaAs STRUCTURES USING PULSED LASER IRRADIATION, A. Catrina Bryce, Univ of Glasgow, Dept of Electr & Electrical Engr, Glasgow, SCOTLAND; Richard M. De La Rue, John H. Marsh, Boon Siew Ooi, Bocang Qiu, Univ of Glasgow, Dept of E&EE, Glasgow, UNITED KINGDOM; Christopher C. Button, John S. Roberts, Univ of Sheffield, Dept of E&EE, Sheffield, UNITED KINGDOM.
O5.7
IMPURITY FREE VACANCY DISORDERING USING PHOSPHORUS DOPED SiO
AND PURE SiO
CAPS, A. Catrina Bryce, Univ of Glasgow, Dept of Electr & Electrical Engr, Glasgow, SCOTLAND; Pasquale Cusumano, A. Saher Helmy, John H. Marsh, Boon Siew Ooi, Univ of Glasgow, Dept of E&EE, Glasgow, UNITED KINGDOM.
O5.8
STARK SHIFT AND FIELD INDUCED TUNNELING IN DOPED QUANTUM WELLS WITH ARBITRARY POTENTIAL PROFILES, Sudhira Panda, Birendra Kumar Panda, Steve Fung, Christopher David Beling, Univ of Hong Kong, Dept of Physics, Hong Kong, HONG KONG.
O5.9
BOUND EXCITONS SPECTROSCOPY OF NARROW-GAP SEMICONDUCTOR MATERIALS, Shavkat Uzgenovich Yuldashev, Pulat Kirgizbaev Khabibullaev, Uzbek Academy of Sciences, Dept of Thermophysics, Tashkent, UZBEKISTAN.
O5.10
NEAR AND MID INFRARED ELECTRO-OPTICAL MODULATION BASED ON INTERSUBBAND TRANSITIONS IN SEMICONDUCTOR QUANTUM WELLS, Amir Sa'ar, Hebrew Univ, Applied Physics Div, Jerusalem, ISRAEL; R. Kapon, Hebrew Univ, The Fredi & Nadine Herrmann School of Appl Sci, Jerusalem, ISRAEL.
O5.11
OPTICAL CHARACTERIZATION AND MAPPING OF FOUR INCH InsB EPITAXIAL THIN FILMS GROWN ON GaAs BY TURBO DISK METALORGANIC CHEMICAL VAPOR DEPOSITION, Zhe Chuan C. Feng, Emcore Corp, Somerest, NJ; C. Beckham, R. A. Stall, N. Schumaker, Emcore Corp, Emcore Research Lab, Somerset, NJ; M. Povloski, Renishaw plc, Shaumburg, IL.
O5.12
FORMATION OF DOUBLE-CHANNEL MESA STRUCTURE FOR GaSb-BASED MID-INFRARED LASER, Anna Piotrowska, Inst of Electron Technology, Technol III-V Semicond, Warsaw, POLAND; Marek Guziewicz, Inst of Electron Technology, Technol III-V Scemicon, Warszawa, POLAND; Eliana Kaminska, Inst of Electron Technology, Technol III-V Semicond, Warsaw, POLAND; Ewa Papis, Inst of Electron Technology, Tech III-V Semicond, Warszawa, POLAND.
O5.13
Zn-DIFFUSED GaSb BASED SOLAR CELLS, Sorokina V. Svetlana, Khvostikov P. Vladimir, A.F. Ioffe Phys-Technical Inst, St. Petersburg, RUSSIA.
O5.14
THE ELECTRONIC CONTRIBUTION TO THE ELASTIC CONSTANTS OF STRAINED III-V QUANTUM WELLS UNDER HIGH MAGNETIC FIELDS, K. P. Ghatak, Calcutta Univ, Dept of Electronic Science, Calcutta, INDIA; S. Dasgupta, Calcutta Univ, Dept of Electronic Sciences, Calcutta, INDIA; B. Nag, Calcutta Univ, Dept of Applied Physics, Calcutta, INDIA; S. N. Biswas, RWTH Aachen, Aachen, GERMANY.
O5.15
LOW-TEMPERATURE PHOTOREFLECTANCE OF GaSb, Shanthi Iyer, Jie Li, Badri Mangalam, Solomon Mulugeta, Devona Faulk, Ward Collis, North Carolina A&T State Univ, Dept of Electrical Engr, Greensboro, NC.
O5.16
THIN InSb-ON-SAPPHIRE MONOCRYSTALLINE LAYERS FOR NEAR ROOM TEMPERATURE PHOTOCONDUCTIVE DETECTORS, Anatol G. Padalko, High Test Ceramics Research Ctr, Moscow, RUSSIA; Vladimir Y. Shevchenko, Russian Academy of Sciences, Moscow, RUSSIA; Olga N. Pashkova, Marina B. Glebova, Russian Academy of Sciences, Thermodynamic Fundamentals of Inorganic Matrls Lab, Leninsky, RUSSIA.
O5.17
SYNTHESIS AND OPTICAL CHARACTERIZATION OF EPITAXIAL Sn
Ge
ALLOY THIN FILMS, Harry A. Atwater, Gang He, California Inst of Technology, Dept of Applied Physics, Pasadena, CA; Gerald E. Jellison, Oak Ridge National Laboratory, Solid State Div, Oak Ridge, TN.
O5.18
THE PROFILE DESIGN OF STRAINED SiGe-CHANNEL P-TYPE MODULATION DOPED FET, Klaus Hsu, National Tsing Hua Univ, Dept of Electical Engr, Hsinchu, TAIWAN; S. M. Huang, National Tsing Hua Univ, Dept of Electrical Engr, Hsinchu, TAIWAN.
O5.19
FAR IR IMPURITY PHOTOCONDUCTIVITY IN STRAINED MQW HETEROSTRUCTURES Ge/GeSi, Zakharij F. Krasilnik, Inst for Physics of Microstructures, Nizhny Novgorod, RUSSIA; Lev V. Paramonov, Vladimir I. Gavrilenko, Inst for Physics of Microstructures, Dept of Superconductors Physics, Novgorod, RUSSIA; Irina M. Erofeeva, Inst for Physics of Microstructures, Dept of Superconductor Physics, Novgorod, RUSSIA; Marija D. Moldavskaya, Vjacheslav V. Nikonorov, Andreij L. Korotkov, Oleg A. Kuznetsov, Inst for Physics of Microstructures, Dept of Superconductors Physics, Novgorod, RUSSIA.
O5.20
NO-PHONON AND PHONON ASSISTED INDIRECT
OPTICAL TRANSITIONS IN SIGE SINGLE CRYSTALS, Axel Gerhardt, Inst fur Kristallzuechtung, Berlin, GERMANY.
O5.21
XPS STUDY OF Pb(Se, Te)/CaF
INTERFACES GROWN ON Si BY MBE, Xiao Ming Fang, Brian N. Strecker, Patrick J. McCann, Univ of Oklahoma, School of Electrical Engr, Norman, OK; Wing Kwan Liu, Michael B. Santos, Univ of Oklahoma, Dept of Physics & Astronomy, Norman, OK.
O5.22
ROOM TEMPERATURE PHOTOLUMINESCENCE FROM IV-VI SEMICONDUCTOR EPILAYERS GROWN BY LPE, I-Na Chao, Patrick J. McCann, Univ of Oklahoma, School of Electrical Engr, Norman, OK; Shu Yuan, Australian National Univ, Dept of Electrical Matls & Engr, Canberra, AUSTRALIA.
O5.23
PHOTOELECTRIC PROPERTIES OF HIGH-OHMIC n-PbTe(Ga), Boris Akimov, Moscow State Univ, Dept of Physics, Moscow, RUSSIA; A. V. Albul, Moscow State Univ, Moscow, RUSSIA; Ludmila Ryabova, Moscow State Univ, Dept of Chemistry, Moscow, RUSSIA.
O5.24
- SENSITIVE FAR-INFRARED PHOTODETECTOR, Dmitriy R. Khokhlov, Sergei N. Chesnokov, Dmitriy E. Dolzhenko, Ivan I. Ivanchik, Moscow State Univ, Dept of Physics, Moscow, RUSSIA.
O5.25
HgCdTe GROWN BY MBE ON CedTe/Si AND CdZnTe/Si, S. Rujirawat, Y. P. Chen, S. Sivananthan, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL.
O5.26
A DEFECT ANALYSIS OF CdTe AND CdZnTe GROWN BY SELECTED-AREA MOLECULAR BEAM EPITAXY ON (211) Si, Andreia E. Charos, W. E. Mayo, Rutgers Univ, Dept of Ceramics, Piscataway, NJ; N.K Dhar, U.S. Army Research Laboratory, Fort Belvior, VA; D. Advena, Army Research Laboratory, Infrared Detector Matls Branch, Fort Belvoir, VA; J. H. Dinan, J. H. Dinan, U.S. Army NVESD, Belvoir, VA.
O5.27
ATOMIC DIFFUSION IN THE TELLURIUM LAYER DEPOSITED ON THE
SURFICE, Vladimir Dubkov, Physical Chemistry Inst, Oxidation & Passivity Lab, Moscow, RUSSIA.
O5.28
GROUP II-VI DOWNCONVERTING PHOSPHORS, Vello Valdna, T. Gavrish, Tallinn Technical Univ, Inst of Materials Technology, Tallinn, ESTONIA; Jaan Hiie, Enn Mellikov, Tallinn Technical Univ, Institute of Materials Technology, Tallinn, ESTONIA; A. Mere, Tallinn Technical Univ, Inst of Materials Technology, Tallinn, ESTONIA.
O5.29
ON THE MOSS-BURSTEIN SHIFT IN QUANTUM CONFINED INFRARED TERNARY AND QUATERNARY MATERIALS, K. P. Ghatak, A. Ali, Calcutta Univ, Dept of Electronic Science, Calcutta, INDIA; B. Nag, Calcutta Univ, Dept of Applied Physics, Calcutta, INDIA; S. N. Biswas, RWTH Aachen, Aachen, GERMANY.
O5.30
RAMAN SCATTERING STUDY OF
-ETCHED SURFACE OF
, Brajesh K. Rai, Ram Katiyar, Univ of Puerto Rico, Dept of Physics, Rio Piedras, PR; Kuo-Tong Chen, Henry Chen, Arnold Burger, Fisk Univ, Dept of Physics, Nashville, TN.
O5.31
SPECTROSCOPIC ELLIPSOMETRY STUDY OF HgCdTe EPILAYER SURFACES DURING ELECTRON CYCLOTRON RESONANCE PLASMA ETCHING, J. N. Johnson, J. H. Dinan, K. M. Singley, M. Martinka, U.S. Army NVESD, Fort Belvoir, VA; B. Jobs, J.A. Woollam Co, Lincoln, NE.
O5.32
OFF-AREA BONDING OF HgCdTe PHOTOCONDUCTIVE INFRARED DETECTORS USING
TRI-LAYER LITHOGRAPHY AND WET/DRY ETCHING TECHNIQUES, Sridhar Manthripragada, Peter Shu, Brent Mott, Roy Johnson, Danny Krebs, Andre Burgess, Frank Peters, Robert Martineau, NASA Goddard Space Flight Ctr, Greenbelt, MD; Sachidananda Babu, Ball Aerospace, Greenbelt, MD; Zhiqing (Jack) Shi, NASA Goddard Space Flight Ctr, Greenbelt, MD; Kezhong (Kelley) Hu, Hughes STX Corp, Greenbelt, MD.
O5.33
SURFACE PRE-TREATMENT AND PASSIVATION OF LONG WAVE HgCdTe PHOTOCONDUCTIVE
INFRARED DETECTORS, Zhiqing Shi, Sridhar Manthripragada, NASA Goddard Space Flight Ctr, Greenbelt, MD; Kelley Hu, Hughes STX Corp, Greenbelt, MD; Robert Martineau, Frank Peters, Andre Burgess, Danny Krebs, Brent Mott, Peter Shu, NASA Goddard Space Flight Ctr, Greenbelt, MD.
O5.34
PHOTOCONDUCTIVITY OF
FILMS GROWN ON GaAs SUBSTRATES, Volodymyr V. Gnatyuk, Inst of Semiconductor Physics, Dept of Optoelectronics, Kiev, UKRAINE; Volodymyr V. Borshch, Sergey I. Bogoslavets, Poltava Pedagogical Inst, Dept of Physics & Mathematics, Poltava, UKRAINE.
O5.35
PHOTOLUMINESCENCE STUDY OF p-ZnGeP2 CRYSTALS, Yurii V. Rud, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Physics, St.Petersburg, RUSSIA; Vasilii Yu. Rud', State Technical Univ, Physico-Mechanical Faculty , Sanct-Petersburg, RUSSIA.
O5.36
SPUTTER DEPOSITION OF SEMICONDUCTOR SUPERLATTICES FOR THERMOELECTRIC APPLICATIONS, Andrew V. Wagner, Lawrence Livermore National Laboratory, Dept of Chem & Matls Science, Livermore, CA; Foreman J. Ronald, Joseph C. Farmer, Troy W. Barbee, Lawrence Livermore National Laboratory, Dept of Chemistry & Matls Science, Livermore, CA.
O5.37
SURFACE CHARGE GRATING IN HOLOGRAPHIC RECORDING THIN FILM DEVICES , Qingnan Wang, D. A. Temple, Hampton Univ, Dept of Physics, Hampton, VA.
O5.38
INTERSUBBAND ABSORPTION FROM InGaAs/GaAs QUANTUM DOT SUPERLATTICE AND InGaAs/GaAs QUANTUM WELLS, Dong Pan, Y. P. Zeng, M. Y. Kong, J. Wu, Y. Q. Zhu, C. H. Zhang, J. M. Li, C. Y. Wang, Inst of Semiconductors, Beijing, CHINA.
O5.39
THE STRUCTURE OF As-GROWN AND INTERDIFFUSED AlGaAs/GaAs QUANTUM WELL STRUCTURES, P. Hughes, Univ of Surrey, Dept of Eletronic & Electrical Engr, Guilford, UNITED KINGDOM; B. L. Weiss, Univ of Surrey, Dept of Electronic & Electrical Engr, Surrey, UNITED KINGDOM; E. Herbert Li, Univ of Hong Kong, Dept of Electrical & Electronic Engineering, Hong Kong, HONG KONG.
O5.40
THERMAL FIELD CALCULATIONS IN BRIDGMAN CRYSTALLIZATION SYSTEMS, Valentina V. Korotkova, Inst of Atmospheric Optics, Nonlinear Optical Crystals Lab, Tomsk, RUSSIA.
SESSION O6: HgCdTe: MATERIALS, DEVICES, AND PROCESSING
Chairs: J. E. Colon and Thomas H. Myers
Wednesday Morning, December 4, 1996
Suffolk (M)
8:30 AM *O6.1
STATUS OF MBE GROWTH OF Hg-BASED ALLOYS FOR IR APPLICATIONS, Jose M. Arias, Rockwell Intl Science Center, Infrared Materials & Devices, Thousand Oaks, CA.
9:00 AM O6.2
P-TYPE DOPING WITH ARSENIC IN MBE-HgCdTe USING PLANAR DOPING APPROACH, Fikri Aqariden, Univ of Illinois-Chicago, Dept of Physics , Chicago, IL; P. S. Wijewarnasuriya, J. P. Faurie, S. Sivananthan, Univ of Illinois-Chicago, Dept of Physics, Chicago, IL.
9:15 AM O6.3
MOLECULAR BEAM EPITAXY GROWTH OF MERCURY CADMIUM TELLURIDE
HETEROSTRUCTURES, Torbjorn Skauli, Stian Lovold, Thierry Colin, Norwegian Defence Research Establishment, Dept of Electronics, Kjeller, NORWAY.
9:30 AM O6.4
HIGH-PERFORMANCE HgCdTe-DETECTORS GROWN BY MOLECULAR BEAM EPITAXY, Rajesh Rajavel, D. M. Jamba, O. K. Wu, J. E. Jensen, Hughes Research Laboratories, Malibu, CA; C. A. Cockrum, G. M. Venzor, J. A. Wilson, E. A. Patten, P. Goetz, Santa Barbara Research Ctr, Goleta, CA.
9:45 AM BREAK
10:15 AM *O6.5
RESONANT-CAVITY INFRARED DEVICES, Jean-Louis Pautrat, Emmanuel Hadji, Joel Bleuse, Noel Magnea, CEA Grenoble, DRFMC/SP2M, Grenoble Cedex 9, FRANCE.
10:45 AM O6.6
CHARACTERIZATION OF Hg
THIN FILMS GROWN ON SI(100) BY ISOVPE, Sandro Santucci, Sergio Di Nardo, Luca Lozzi, Univ di L'Aquila, Dept of Physics, L'Aquila , ITALY; S. Bernardi, CREO, L'Aquila, ITALY.
11:00 AM O6.7
THE ROLE OF ATOMIC HYDROGEN IN THE NUCLEATION AND GROWTH OF CdTe BUFFER LAYERS AT REDUCED TEMPERATURES ON SILICON GaAs, CdTe and HgCdTe, Lauren S. Hirsch, West Virginia Univ, Dept of Physics, Morgantown, WV; Zhonghai Yu, North Carolina State Univ, Dept of Physics, Raleigh, NC; Thomas H. Myers, West Virginia Univ, Dept of Physics, Morgantown, WV; M. Richards-Babb, West Virginia Univ, Dept of Chemistry, Morgantown, WV.
11:15 AM O6.8
DIFFUSION OF MERCURY INTO CADMIUM TELLURIDE, M. U. Ahmed, Coventry Univ, Applied Physics Div, Coventry, UNITED KINGDOM; E. David Jones, J. B. Mullin, N. M. Stewart, Coventry Univ, Dept of Physics, Coventry, UNITED KINGDOM.
11:30 AM O6.9
IN SITU SPECTROSCOPIC ELLIPSOMETRY FOR MONITORING AND CONTROL OF HgCdTe HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY, L. Anthony Almeida, Texas Instruments, Inc, , Danvers, MA; Malcolm J. Bevan, Walter M. Duncan, Hung-Dah Shih, Texas Instruments, Inc, Corp Research & Development, Dallas, TX.
11:45 AM O6.10
CHARACTERIZATION OF THE
/Ar HIGH DENSITY PLASMA ETCH PROCESS FOR HgCdTe, Charles R. Eddy, Jerry R. Meyer, Darrin Leonhardt, Vasghen A. Shamamian, Ronald T. Holm, Orest J. Glembocki, Craig A. Hoffman, James E. Butler, Naval Research Laboratory, Washington, DC.
SESSION O7: NONLINEAR AND OPTICAL PARAMETRIC OSCILLATOR MATERIALS
Chairs: Larry E. Halliburton and K. Schepler
Wednesday Afternoon, December 4, 1996
Suffolk (M)
1:30 PM *O7.1
TERNARY
AND
SEMICONDUCTORS FOR INFRARED LASER FREQUENCY CONVERSION, Peter G. Schunemann, Thomas M. Pollak, Lockheed Sanders Inc, Nashua, NH.
2:00 PM O7.2
INELASTIC LIGHT SCATTERING IN ZINC GERMNIUM DIPHOSPHIDE, Bahish Bairamov, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Physics, St. Petersburg, RUSSIA; Peter G. Schunemann, Lockheed Sanders Inc, Nashua, NH; N. Fernelius, M. C. Ohmer, Air Force Wright Laboratory, WL/MLPO, Wright Patterson AFB, OH; Howard E. Jackson, Univ of Cincinnati, Dept of Physics, Cincinnati, OH; V. V. Toporov, A.F. Ioffe Phys-Technical Inst, Soid State Physics, St. Petersburg, RUSSIA; V. K. Negoduyko, A.F. Ioffe Phys-Technical Inst, Solid State Physics, St. Petersburg, RUSSIA; A. Aydinli, Bilkent Univ, Dept of Physics, Ankara, TURKEY; Yurii V. Rud, A.F. Ioffe Phys-Technical Inst, Dept of Solid State Physics, St.Petersburg, RUSSIA.
2:15 PM O7.3
MELT GROWTH OF
: HOMOGENIETY RANGE AND THERMODYNAMIC PROPERTIES, R. H. Castleberry, North Carolina State Univ, Dept of MS&E, Raleigh, NC; S. Fiechter, Andreas Kurzweil, Hahn-Meitner-Inst, Dept of Physical Chemistry, Berlin, GERMANY; Mirko Angelov, Technische Univ Ilmenau, Inst fur Physik, Ilmenau, GERMANY; Klaus Diesner, Hahn-Meitner-Inst, Dept of Physical Chemistry, Berlin, GERMANY.
2:30 PM BREAK
3:00 PM *O7.4
SELF-TRAPPING OF OPTICAL BEAMS IN InP, Gregory J. Salamo, Univ of Arkansas, Dept of Physics, Fayetteville, AR; David F. Bliss, George Bryant, USAF Hanscom AFB, Hanscom AFB, MA; Matthew Chauvet, Scott A. Hawkins, Univ of Arkansas, Dept of Physics, Fayatteville, AR; Mordechai Segev, Princeton Univ, Dept of Electrical Engr, Princeton, NJ.
3:30 PM O7.5
COMPOSITION OF THE EQUILIBRIUM VAPOR PHASE OVER
AND THERMAL STABILITY, S. Fiechter, Hahn-Meitner-Inst, Dept of Physical Chemistry, Berlin, GERMANY; R. H. Castleberry, North Carolina State Univ, Dept of MS&E, Raleigh, NC; Andreas Kurzweil, Klaus Diesner, Hahn-Meitner-Inst, Dept of Physical Chemistry, Berlin, GERMANY.
3:45 PM O7.6
ELECTRON PARAMAGNETIC RESONANCE STUDIES OF POINT DEFECTS IN ZINC GERMANIUM PHOSPHIDE
, Scott D. Setzler, Larry E. Halliburton, Nancy Giles, West Virginia Univ, Dept of Physics, Morgantown, WV; Peter G. Schunemann, Thomas M. Pollak, Lockheed Sanders Inc, Nashua, NH.
4:00 PM O7.7
DEFECT CHARACTERIZATION IN ZnGeP
BY TIME -RESOLVED PHOTOLUMINESCENCE, Nikolaus Dietz, North Carolina State Univ, Dept of Physics, Raleigh, NC; H. E. Gumlich, Wolfgang Busse, Technical Univ Berlin, Dept of Physics, Berlin, GERMANY; W. Ruderman, Inrad Inc, Northvale, NJ; Klaus J. Bachmann, Gary Wood, North Carolina State Univ, Dept of MS&E, Raleigh, NC; I. Tsveybak, Inrad Inc, Northvale, NJ.
4:15 PM O7.8
FIRST PRINCIPLES CALCULATIONS OF ELECTRONIC STRUCTURE OF
CdGeAs
, Peter Zapol, Ravindra Pandey, Michigan Technological Univ, Dept of Physics, Houghton, MI; Mel Ohmer, Air Force Wright Laboratory, Wright Lab, Wright Patterson AFB, OH.
4:30 PM O7.9
ZnGeP
SYNTHESIS AND GROWTH, Galina A. Verozubova, Inst of Atmospheric Optics, Nonlinear Optical Crystals Lab, Tomsk, RUSSIA; Alexander I. Gribenyukov, Inst of Atmospheric Optics, Nonlinear Optical Crystal Lab, Tomsk, RUSSIA; Valentina V. Korotkova, Inst of Atmospheric Optics, Nonlinear Optical Crystals Lab, Tomsk, RUSSIA; Mikchail P. Ruzaikin, Tomsk State Univ, Dept of Physics, Tomsk, RUSSIA.
SESSION O8: INTERDUFUSION IN HETEROSTRUCTURES
Chairs: Howard E. Jackson and K. White
Thursday Morning, December 5, 1996
Suffolk (M)
9:00 AM *O8.1
DIFFUSED QUANTUM WELL STRUCTURES: ADVANCES IN MATERIALS AND DEVICE REALIZATIONS, E. Herbert Li, Univ of Hong Kong, Dept of Electrical & Electronic Engineering, Hong Kong, HONG KONG.
9:30 AM O8.2
INTERDIFFUSION IN QUANTUM WELLS: MIXING MECHANISMS AND ENERGY LEVELS, B. L. Weiss, Univ of Surrey, Dept of Electronic & Electrical Engr, Surrey, UNITED KINGDOM; H. E. Jackson, R. G. Gass, Univ of Cincinnati, Dept of Physics, Cincinnati, OH; P. Hughes, Univ of Surrey, Dept of Eletronic & Electrical Engr, Guilford, UNITED KINGDOM.
9:45 AM O8.3
POLARIZATION INSENSITIVITY IN INTERDIFFUSED STRAINED InGaAs/InP QUANTUM WELLS, Joseph Micallef, Univ of Malta, Dept of Microelectronics, Msida, MALTA; James L. Borg, Univ of Malta, Detp of Microelectronics, Msida, MALTA.
10:00 AM BREAK
10:30 AM O8.4
THREE SPECIES DIFFUSION AND THEIR EFFECT ON THE VARIATION OF STRAINS IN InGaAs/AlInAs QW, W. C. Shiu, Y. Chan, Hong Kong Baptist Univ, Dept of Mathematics, Kowloon, HONG KONG; W. K. Tsui, Univ of Hong Kong, Dept of Electrical & Electronic Engr,; E. Herbert Li, Univ of Hong Kong, Dept of Electrical & Electronic Engineering, Hong Kong, HONG KONG.
10:45 AM O8.5
PHASE MODULATOR DEFINED BY IMPURITIES INDUCED DISORDERING, Kai-Ming Lo, Quincy, MA; Wallace C.H. Choy, E. Herbert Li, Univ of Hong Kong, Dept of Electrical & Electronic Engineering, Hong Kong, HONG KONG.
11:00 AM O8.6
ANALYSIS OF THREE TYPES OF INTERDIFFUSION PROCESS IN InGaAs/InP QUANTUM-WELL AND THEIR DEVICES IMPLICATIONS, K. S. Chan, City Univ of Hong Kong, Dept of Physics & Matls Science, Kowloon, HONG KONG.
11:15 AM O8.7
OPTICAL PROPERTIES OF DIFFUSED AlGaAs/GaAs MULTIPLE QUANTUM WELLS AND THEIR APPLICATIONS IN DFB LASER GRATING AND HIGH-POWER LASER, Yi Luo, Tsinghua Univ, State Key Lab on Integrated Optoelectronics, Beijing, CHINA; Ai-Qing Jing, Tsinghua Univ, Dept of Electrical Engr, Beijing, CHINA; Zhi-Biao Hao, Jian-Hua Wang, Tsinghua Univ, Dept of Electronic Engr, Beijing, CHINA; E. Herbert Li, Univ of Hong Kong, Dept of Electrical & Electronic Engineering, Hong Kong, HONG KONG.
11:30 AM O8.8
INTEGRATED ALL-OPTICAL DEVICES FABRICATED USING
AREA-SELECTIVE DISORDERING OF MULTIPLE QUANTUM
WELL STRUCTURES, Patrick Likamwa, Univ of Central Florida, CREOL, Orlando, FL; Jagadeesh Pamulapati, Dutta Mitra, Adelphi, MD; Ayman Kan'an, Univ of Central Florida, CREOL, Orlando, FL .
11:45 AM O8.9
MODELIZATION OF Be DIFFUSION IN InGaAs EPITAXIAL STRUCTURES FOR HBT APPLICATIONS, Sylvestre Gautier, Jerome Marcon, INSA de Rouen, LCIA, Mont Saint Aignan, FRANCE; Serge Koumetz, INSA de Rouen, Mont Saint Aignan, FRANCE; Kaouther Ketata, INSA de Rouen, LCIA, Mont Saint Aignan, FRANCE; Mohamed Ketata, INSA de Rouen , LCIA, Mont Saint Aignan, FRANCE; Patrick Launay, CNET, France-Telecom PAB, Bagneux, FRANCE.