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2012 MRS Spring Meeting & Exhibit

April 9-13, 2012 | San Francisco
Meeting Chairs: Lara A. Estroff, Jun Liu, Kornelius Nielsch, Kazumi Wada

Symposium G : Reliability and Materials Issues of III-V and II-VI Semiconductor Optical and Electron Devices and Materials II

2012-04-10   Show All Abstracts

Symposium Organizers

Osamu Ueda, Kanazawa Institute of Technology Graduate School of Engineering
Mitsuo Fukuda, Toyohashi University of Technology
Kenji Shiojima, University of Fukui Graduate School of Electrical and Electronics Engineering
Edwin Piner, Texas State University, San Marcos

Symposium Support

Japan Society of Applied Physics
G2: LEDs and Crystal Growth
Session Chairs
Thomas Kuech
Tuesday PM, April 10, 2012
Moscone West, Level 2, Room 2007

2:30 AM - G2.1
Burning Effects of Graphene-based Transparent Conductive Electrode in GaN-based UV LEDs

Byung-Jae Kim 1 Jihyun Kim 1

1Korea University Seoul Republic of Korea

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2:45 AM - G2.2
Local Electronic Structure and UV Electroluminescence of n-ZnO:N/p-GaN Heterojunction LEDs Grown by Remote Plasma Atomic Layer Deposition

Chien Jui-Fen 1 Chen Ching-Hsiang 2 Shyue Jing-Jong 1 3 Chen Miin-Jang 1 4

1National Taiwan University Taipei Taiwan2Protrustech Corporation Limited Tainan Taiwan3Academia Sinica Taipei Taiwan4National Taiwan University Taipei Taiwan

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3:00 AM - G2.3
An Easy Approach to Identify Dislocation Types in GaN Films through Selective Chemical Etching and Atom Force Microscopy

Guoqiang Li 1 Hui Yang 1

1South China Univ. of Technology Guangzhou China

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3:15 AM - G2.4
Influence of Sb Overpressure on the Anisotropic Transport Properties of InAs/AlSb Heterostructures Grown on Highly Mismatched Substrates

Salim El Kazzi 1 Ludovic Desplanque 1 Yi Wang 2 Pierre Ruterana 2 Xavier Wallart 1

1IEMN Villeneuve d'Ascq France2CIMAP Caen France

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3:30 AM - G2.5
Self-catalyzed Growth of InAs1-xPx Nanowires on Si by Molecular Beam Epitaxy

Marina Panfilova 1 Ivan Isakov 1 Marion J. L. Sourribes 1 Huiyun Y Liu 2 Paul A Warburton 1

1University College London London United Kingdom2University College London London United Kingdom

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3:45 AM - G2.6
Enhanced Light Absorption in Textured Metal Organic Chemical Vapour Deposited (MOCVD) CdO Thin Films

Sunday O Adekoya 1 Marcus Adebola Eleruja 1 Bolutife Olofinjana 1 Olumide O Akinwunmi 1 Bidini A Taleatu 1 Ezekiel. O B Ajayi 1

1Obafemi Awolowo University Ile-Ife Nigeria

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4:00 AM - G2
BREAK

G3: Crystal Growth
Session Chairs
Kenji Shiojima
Tuesday PM, April 10, 2012
Moscone West, Level 2, Room 2007

4:30 AM - *G3.1
Metamorphic and Non-conventional `Bufferrsquo; Layers for Materials Integration

Thomas F. Kuech 1 Luke J Mawst 2 Susan E Babcock 3 Paul N Nealey 1 Tung-Sheng Kuan 4

1University of Wisconsin - Madison Madison USA2University of Wisconsin -Madison Madison USA3University of Wisconsin -Madison Madison USA4State University of New York at Albany Albany USA

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5:00 AM - G3.2
Fabrication of High Quality Free Standing GaN Film by Nano Lift-off

Yuefeng Wang 2 5 Liang Tang 1 5 Timothy Sands 2 3 5 Michael J Manfra 1 3 5 Gary Cheng 4

1Purdue University West Lafayette USA2Purdue University West Lafayette USA3Purdue University West Lafayette USA4Purdue University West Lafayette USA5Purdue University West Lafayette USA

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5:15 AM - G3.3
Effect of the N/Al Ratio in the Gas Phase at Constant Supersaturation on AlN Epitaxy on Sapphire by HTCVD

Baccar Nour Elhouda 1 Boichot Raphael 1 Blanquet Elisabeth 1 Pons Michel 1

1SIMaP Saint Martin d'Hegrave;res France

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5:30 AM - G3.4
A Detailed Investigation into Strain-coupled Bi-layer InAs/GaAs Quantum Dots: Impact of Variation in Deposition Rate, Barrier Thickness and Monolayer Coverage

Nivedita Basu 1 Subhananda Chakrabarti 1

1Indian Institute of Technology Bombay Mumbai India

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5:45 AM - G3.5
Integration of II-VI Materials on GaSb Substrates

Kevin Doyle 1 2 Gregory Brill 2 Jessica Chai 1 Kyoung-Keun Lee 1 Jack Dinan 1 Tom Myers 1

1Texas State University San Marcos USA2Army Research Lab Adelphi USA

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G1: Laser Reliability and Defects
Session Chairs
Osamu Ueda
Tuesday AM, April 10, 2012
Moscone West, Level 2, Room 2007

9:30 AM - *G1.1
Reliability of Semiconductor Lasers Used in Optical Fiber Communication

Nobuyuki Ikoma 1

1Sumitomo Electric Industries Yokohama Japan

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10:00 AM - *G1.2
Grown-in and Process-induced Defects in GaN-based Materials and Optical Devices

Shigetaka Tomiya 1

1Sony Corporation Atsugi Japan

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10:30 AM - *G1.3
Highly Reliable 1060nm Vertical Cavity Surface Emitting Lasers (VCSELs) for Optical Interconnect

Shinichi Kamiya 1 Keishi Takaki 2 Suguru Imai 2 Junji Yoshida 2 Masaki Funabashi 2 Yasumasa Kawakita 2 Koji Hiraiwa 2 Toshihito Suzuki 2 Hitoshi Shimizu 2 Naoki Tsukiji 2 Takuya Ishikawa 1 Akihiko Kasukawa 2

1Furukawa Electric Co., Ltd. 2-4-3, Okano, Nishi-ku, Yokohama Japan2Furukawa Electric Co., Ltd. 6, Yawata-Kaigan Dori, Ichihara Japan

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11:00 AM - G1
Break

11:30 AM - *G1.4
Reliability of Vertical-cavity Surface-emitting Lasers

Robert W. Herrick 1

1JDSU San Jose USA

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12:00 PM - G1.5
Thermomechanical Modelling of High Power Laser Diode Degradation

Alonso Martin-Martin 1 Jorge Souto 1 Pilar Intilde;iguez 1 Juan Jimenez 1

1Universidad de Valladolid Valladolid Spain

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12:15 PM - G1.6
Residual-strain Dependence of Structural Stability of Strain-compensated Quantum Cascade Lasers

Shin-ichiro Gozu 1 Yukihiro Tsuji 2 Takashi Kato 2 Jun-ichi Hashimoto 2 Katsuhisa Tawa 2 Tsukuru Katsuyama 2 Haruhiko Kuwatsuka 1 Teruo Mozume 1

1National Institute of Advanced Industrial Science and Technology Tsukuba Japan2Sumitomo Electric Industries Yokohama Japan

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12:30 PM - G1.7
Study of Deep Levels of GaAs/p-GaAs1-xBix Heterostructure Grown by Molecular Beam Epitaxy

Takuma Fuyuki 1 Shota Kashiyama 1 Kunishige Oe 1 Masahiro Yoshimoto 1

1Kyoto Institute of Technology Kyoto Japan

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12:45 PM - G1.8
Analysis of Thermal Stability of PL Peak Wavelength in GaAs1-xNx Capped InAs Quantum Dots

Subhananda Chakrabarti 1 Akshay Agarwal 1 Mayank Chaturvedi 1 Srujan Meesala 1

1Indian Institute of Technology Bombay Mumbai India

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2012-04-11   Show All Abstracts

Symposium Organizers

Osamu Ueda, Kanazawa Institute of Technology Graduate School of Engineering
Mitsuo Fukuda, Toyohashi University of Technology
Kenji Shiojima, University of Fukui Graduate School of Electrical and Electronics Engineering
Edwin Piner, Texas State University, San Marcos

Symposium Support

Japan Society of Applied Physics
G5/II6: Joint Session: Recombination Enhanced Point Defect Reaction
Session Chairs
Osamu Ueda
Wednesday PM, April 11, 2012
Moscone West, Level 2, Room 2007

2:30 AM - *G5.1/II6.1
Control on Nonradiative e-h Recombination Enhanced Defect Reaction(REDR) in II-VI and III-N Light Emitting Devices

Koshi Ando 1 Yoshiaki Harada 1 Masahiro Adachi 2 Show Nakagawa 1 Tomoki Abe 1 Hirofumi Kasada 1

1Tottori University Tottori Japan2Sumitomo Electric Industries Osaka Japan

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3:00 AM - G5.2/II6.2
Feedback and Inflation Mechanism in Successive Multiphonon Carrier Captures at Deep-level Defects

Kei Suzuki 1 Masaki Wakita 1 Yuzo Shinozuka 1

1Wakayama University Wakayama Japan

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3:15 AM - G5.3/II6.3
High-Irradiance Degradation Studies of Metamorphic 1eV GaInAs Solar Cells

Ryan France 1 Myles Steiner 1

1NREL Golden USA

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3:30 AM - G5.4/II6.4
Interplay of In-grown Extended and Point Defects in III-nitrides

Filip Tuomisto 1 Jussi-Matti Maeki 1 Christian Rauch 1 Ilja Makkonen 1 2

1Aalto University Aalto Finland2Aalto University Aalto Finland

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3:45 AM - G5.5/II6.5
Defect Activation in GaN under Low Energy Electron Beam Irradiation

Henri Nykanen 1 Sami Suihkonen 1 Markku Sopanen 1 Lucas Kilanski 2 Filip Tuomisto 2

1Aalto University School of Electrical Engineering Espoo Finland2Aalto University School of Science Espoo Finland

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4:00 AM - G5/II6
BREAK

G6/II7: Joint Session: Defect Issues in Semiconductors
Session Chairs
Osamu Ueda
Wednesday PM, April 11, 2012
Moscone West, Level 2, Room 2007

4:30 AM - *G6.1/II7.1
Radiation-induced Growth of Extended Defects in 4H-Silicon Carbide

Koji Maeda 1

1The University of Tokyo Tokyo Japan

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5:15 AM - G6.3/II7.3
An Analytical Bond-order Potential for the Cadmium Telluride Binary System

Donald K. Ward 1 Xiaowang W Zhou 2 Bryan M Wong 3 F. P Doty 1 Jonathan A Zimmerman 2

1Sandia National Laboratory Livermore USA2Sandia National Laboratory Livermore USA3Sandia National Laboratory Livermore USA

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5:30 AM - G6.4/II7.4
Influence of Low Energy Electron Beam Irradiation of Graphene Ribbon Based Back Gated Field Effect Transistors

Adrian Dinescu 1 Munizer Purica 1 Raluca Gavrila 1 Andrei Avram 1 Raluca Muller 1

1IMT Bucharest Voluntari Romania

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5:45 AM - G6.5/II7.5
Effects of the Electron Beam Irradiation on the Low-frequency Noise Level in Graphene Transistors

Md. Zahid Hossain 1 Guanxiong Liu 1 Alexander Balandin 1

1University of California - Riverside Riverside USA

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G7: Poster Session
Session Chairs
Koshi Ando
Wednesday PM, April 11, 2012
Marriott, Yerba Buena, Salons 8-9

9:00 AM - G7.1
Impact of Barrier Thickness on the Structural and Optical Properties of Multilayer(x10) Coupled InAs/GaAs Quantum Dots Using Bilayer(X2) Quantum Dots as the Seed for Strain Patterning

Saikalash Shetty 1 Nivedita Basu 1 Subhananda Chakrabarti 1

1Indian Institute of Technology Bombay Mumbai India

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9:00 AM - G7.10
Plasma Damage-free Sputtering of Al-doped ZnO Films Grown Using Linear Facing Target Sputtering for GaN-based LEDs

Hyun-Soo Shin 1 Han-Ki Kim 1

1Kyung Hee University Yongin Republic of Korea

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9:00 AM - G7.11
Interface Studies of Atomic Layer Deposited Al2O3 on GaN

Rathnait D Long 1 Brian McSkimming 2 James S Speck 2 Paul C McIntyre 1

1Stanford University Stanford USA2University of Santa Barbara Santa Barbara USA

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9:00 AM - G7.13
Real Time Growth Process Monitoring and Magnetoptic Properties of GaN:Er Thin Films

Kiran Dasari 1 Javier Wu 1 Ratnakar Palai 1 Wojciech Jadwisienczak 2 Huhtinen Hannu 3

1University of Puerto Rico San Juan Puerto Rico2Ohio University Athens USA3University of Turku Turku Finland

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9:00 AM - G7.14
Influence of Annealing on the Optical Properties of GaN Grown by Pulsed Laser Deposition

Muhammad Baseer Haider 1 Sardar M Durrani 1 Mohammad F Al-Kuhaili 1 Imran Bakhtiari 1

1King Fahd University of Petroleum and Minerals Dhahran Saudi Arabia

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9:00 AM - G7.15
Nitridation of GaAs Surface as an Alternative for Obtain Cubic GaN Substrate

Victor Saacute;nchez 1 Heber Vilchis 1

1CINVESTAV-IPN Meacute;xico Mexico

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9:00 AM - G7.16
Fabrication and Characterization of Multiferroic 2-dimensional ZnO:(Cr,Ti) Nanoline

Eiwhan Jung 1 Youngmin Lee 1 Sejoon Lee 2 Yoon Shon 2 DeukYoung Kim 1

1Dongguk University Seoul Republic of Korea2Dongguk University Seoul Republic of Korea

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9:00 AM - G7.17
Characteristics of ZnO Thin Films Formed by Sol-gel Method Using Microwave

Eunkyeom Kim 1 Youngill Kim 1 Jaekyu Jeong 1 Bongsub Kim 1 Kyoungwan Park 1

1University of Seoul Seoul Republic of Korea

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9:00 AM - G7.19
Improvement of Negative Bias Temperature Instability under Light Illumination on Amorphous InGaZnO Thin-film Transistors Fabricated by High-pressure Water Vapor Annealing

You Seung Rim 1 Hyun Soo Shin 2 Hyun Jae Kim 1

1Yonsei University Seoul Republic of Korea2Samsung Mobile Display Co., Ltd. Yongin-city Republic of Korea

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9:00 AM - G7.2
Resonant Tunneling Diodes with Quaternary GaInNAs Absorption Layer for Telecommunication Light Detection Application

Fabian Hartmann 1 Fabian Langer 1 Dirk Bisping 1 Sven Hoefling 1 Martin Kamp 1 Alfred Forchel 1 Lukas Worschech 1

1Universitauml;t Wuuml;rzburg Wuuml;rzburg Germany

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9:00 AM - G7.20
Influence of Thermal Annealing on P-type Properties of Sb Doped ZnO Thin Films

Jinyong Lee 1 Deuk Young Kim 1 Choeun Lee 1 Eiwhan Jung 1 Doosoo Kim 1 Eunhee Shim 1 Youngmin Lee 1 Hyosuk Choi 2 Moondeok Kim 2

1Dongguk University Seoul Republic of Korea2Chungnam National University Daejeon Republic of Korea

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9:00 AM - G7.21
Effect of Hafnium on Zn-Sn-O Thin Film Transistors Fabricated by Solution Process

Jun Young Choi 2 SangSig Kim 2 Sang Yeol Lee 1

1Cheongju University Cheongju Republic of Korea2Korea University Seoul Republic of Korea

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9:00 AM - G7.22
Tuning the Optical and Electrical Properties of Hydrothermally Grown ZnO Nanowires by Sealed Post Annealing Treatment

Shuigang Xu 1 Chun Cheng 1 Wenhao Guo 1 Yuheng He 1 Rui Huang 1 Shengwang Du 1 Ning Wang 1

1the Hong Kong University of Science and Technology Hong Kong Hong Kong

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9:00 AM - G7.24
Chemical Vapor Deposition of Boron Phosphide Thin Films

Julia K.C. Abbott 1 J. D Brasfield 2 1 Philip D Rack 3 Gerd J Duscher 3 Charles S Feigerle 1

1University of Tennessee Knoxville USA2Y-12 National Security Complex Oak Ridge USA3University of Tennessee Knoxville USA

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9:00 AM - G7.25
Effects of In-situ Remote Plasma Treatment on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using a Double Active Channel Layer

Ja Hyun Koo 1 Tae Sung Kang 1 Jin Pyo Hong 1 Tae Hyun Kim 2 Seong Kwang Kim 2

1Han Yang Univ. Seoul Republic of Korea2Hanyang University Seoul Republic of Korea

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9:00 AM - G7.3
Degradation Characteristics of AlGaN/GaN-on-Si Heterostructure FETs for High Voltage Switching Application

Shinhyuk Choi 1 Bong-ryeol Park 1 Hoyoung Cha 1 Hyungtak Kim 1

1Hongik University Seoul Republic of Korea

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9:00 AM - G7.5
Molecular-beam Epitaxy of InSb Nano-scale Dots on GaSb at Low Temperature

Huiping Shen 1 Mark Ashwin 2 Changying Zhao 1 Tim Jones 2

1University of Warwick Coventry United Kingdom2University of Warwick Coventry United Kingdom

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9:00 AM - G7.6
Trimethylaluminum Saturation of n-InGaAs Surface Prior to Atomic Layer Deposition of Al2O3

Jaesoo Ahn 1 Wilhelm Melitz 2 Tyler Kent 2 Andrew C Kummel 2 Paul C McIntyre 1

1Stanford University Stanford USA2University of California, San Diego La Jolla USA

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9:00 AM - G7.7
The Occupancy of the Threading Dislocation Lines within n-type Gallium Nitride: Recent Progress

Erfan Baghani 1 Stephen Karrer O'Leary 1

1The University of British Columbia Kelowna Canada

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9:00 AM - G7.8
Surface Segregation in Rare Earth Doped GaN Thin Films

Stephen Richard McHale 1 John W McClory 1 James C Petrosky 1 Ratnakar Palai 2 Yaroslav Losovyj 3 4 Peter A Dowben 4 Ihor Ketsman 4 Douglas A Buchanan 1

1Air Force Institute of Technology Wright Patterson AFB USA2University of Puerto Rico San Juan Puerto Rico3Louisiana State University Baton Rouge USA4University of Nebraska Lincoln USA

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9:00 AM - G7.9
Effect of Doping-concentration-dependent Characteristics of Ga-doped ZnO on the Luminescence of GaN Light-emitting Diodes as Electrodes

Chang Oh Kim 1 Sung Kim 1 Dong Hee Shin 1 Suk-Ho Choi 1

1Kyung Hee University Yongin 446-701 Republic of Korea

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G4: Characterization and Theoretical Calculation
Session Chairs
Robert Herrick
Wednesday AM, April 11, 2012
Moscone West, Level 2, Room 2007

9:30 AM - *G4.1
Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High Electron Mobility Transistors on a Nanometer Scale

Chung-Han Lin 1 Tyler A Merz 2 Daniel R Doutt 2 Jungwoo Joh 3 Jesus A del Alamo 3 Umesh K Mishra 4 Leonard J. Brillson 1 2 5

1The Ohio State University Columbus USA2The Ohio State University Columbus USA3Massachusetts Institute of Technology Cambridge USA4University of California Santa Barbara USA5The Ohio State University Columbus USA

Show Abstract

10:00 AM - G4.2
Structural Defect Formation in Ni-Gated AlGaN/GaN HEMTs

Monta Holzworth 1 N. G Rudawski 1 P. G Whiting 1 C. Y Chang 1 E. A Douglas 1 S. J Pearton 1 K. S Jones 1 L. Liu 2 T. S Kang 2 F. Ren 2 L. Zhou 3 M. R Johnson 3 D. J Smith 3 G. D Via 4

1University of Florida Gainesville USA2University of Florida Gainesville USA3Arizona State University Gainesville USA4Wright Patterson Air Force Base Dayton USA

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10:15 AM - G4.3
No Lateral Composition Fluctuations in Aberration-corrected STEM Images of a InGaN Quantum Well at Low Dose

Andrew B Yankovich 1 Alex V Kvit 1 Xing Li 2 Fan Zhang 2 Vitaliy Avrutin 2 Huiyong Liu 2 Natalia Izyumskaya 2 Umit Ozgur 2 Hadis Morkoc 2 Brandon Van Leer 3 Paul Voyles 1

1University of Wisconsin, Madison Madison USA2Virginia Commonwealth University Richmond USA3FEI Company Hillsboro USA

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10:30 AM - G4.4
Characteristics of Polarization Emission in A-plane GaN-based Multiple Quantum Wells Structures

Chiao-Yun Chang 1 Huei-Min Huang 1 Tien-Chang Lu 1 Hao-Chung Kuo 1 Shing-Chung Wang 1 Chih-Ming Lai 2

1National Chiao Tung University Hsinchu Taiwan2Ming Chuan University Taoyuan County Taiwan

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10:45 AM - G4.5
Magnetic and Optical Properties of Rare Earth-doped GaN Semiconducting Thin Films

Kiran Dasari 1 Javier Wu 1 Ratnakar Palai 1 Wojciech Jadwisienczak 2 Huhtinen Hannu 3

1University of Puerto Rico San Juan Puerto Rico2Ohio University Athens USA3University of Turku Turku Finland

Show Abstract