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2013 MRS Spring Meeting & Exhibit

April 1-5, 2013 | San Francisco
Meeting Chairs: Mark L. Brongersma, Vladimir Matias, Rachel Segalman, Lonnie D. Shea, Heiji Watanabe

Symposium EE : Phase-Change Materials for Memory, Reconfigurable Electronics, and Cognitive Applications

2013-04-02   Show All Abstracts

Symposium Organizers

Raffaella Calarco, Paul Drude Institute for Solid State Electronics
Paul Fons, Advanced Institute of Industrial Science and Technology
Bart J. Kooi, M2i University of Groningen
Martin Salinga, RWTH Aachen University
Martha (Salinga's Asst) Shafer-Thyen,
EE2: Crystallization Kinetics II
Session Chairs
Bart J. Kooi
Tuesday PM, April 02, 2013
Moscone West, Level 3, Room 3011

2:30 AM - EE2.01
Affect of Pressure on the Crystallization Process in Ge2Sb2Te5 and Its Implications for Scaling

Robert E Simpson 1 Otello M Roscioni 2 Paulo S Branicio 3

1Singapore University of Technology and Design (SUTD) Singapore Singapore2University of Bologna Bologna Italy3Institute of High Performance Computing Singapore Singapore

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2:45 AM - EE2.02
Non-Arrhenius Crystallization in the Pulsed Regime of Ge2Sb2Te5

Nicola Ciocchini 1 Marco Cassinerio 1 Davide Fugazza 2 Daniele Ielmini 1

1Politecnico di Milano Milano Italy2Intel Corporation Santa Clara USA

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3:00 AM - EE2.03
Variability in Nanocrystalline GST Cells

Michael Trombetta 1 Azer Faraclas 1 Nicholas Williams 1 Sean Fischer 1 Helena Silva 1 Ali Gokirmak 1

1University of Connecticut Storrs USA

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3:15 AM - EE2.04
Crystallization Times of Ge2Sb2Te5 Nanostructures as a Function of Temperature

Faruk Dirisaglik 1 Jonathan Rarey 1 Kadir Cil 1 Sadid Muneer 1 Lingyi Zhang 1 Yu Zhu 2 Chung Lam 2 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA2IBM Watson Research Center Yorktown Heights USA

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3:30 AM - EE2
BREAK

EE3: Fundamentals of Electronic Properties
Session Chairs
Martin Salinga
Tuesday PM, April 02, 2013
Moscone West, Level 3, Room 3011

4:00 AM - *EE3.01
Differences in Bonding and Gap States between the Amorphous and Crystalline Phases of GeSbTe Phase Change Materials

John Robertson 1 Bolong Huang 1

1Cambridge University Cambridge United Kingdom

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4:30 AM - EE3.02
Investigations on the Density of States of Amorphous GeTe

Jennifer Maria Luckas 1 2 Daniel Krebs 3 Josef Klomfass 4 Reinhard Carius 4 Matthias Wuttig 6 Christophe Longeaud 5

1RWTH Aachen/ LGEP Paris Aachen/Paris Germany2University of Luxembourg Belval Luxembourg3IBM Zurich Switzerland4Forschungszentrum Jamp;#252;lich Jamp;#252;lich Germany5CNRS UMR 8507 Paris France6RWTH Aachen Aachen Germany

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4:45 AM - EE3.03
Electrical Resistivity of Liquid Ge2Sb2Te5 Based on Thin Film and Nanoscale Device Measurements

Kadir Cil 1 Faruk Dirisaglik 1 Lhacene Adnane 1 Maren Wennberg 1 Adrienne King 1 Azer Faraclas 1 Mustafa Bilal Akbulut 1 Yu Zhu 2 Chung Lam 2 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA2IBM Watson Research Center Yorktown Heights USA

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EE4: Resistance Drift
Session Chairs
Martin Salinga
Tuesday PM, April 02, 2013
Moscone West, Level 3, Room 3011

5:00 AM - EE4.01
Electronic Mechanism for Resistance Drift in Phase-change Memory Materials: Link to Persistent Photoconductivity

Stephen Elliott 1

1University of Cambridge Cambridge United Kingdom

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5:15 AM - EE4.02
Electrically-induced Drift in Phase Change Memories

Marco Cassinerio 1 Nicola Ciocchini 1 Daniele Ielmini 1

1Politecnico di Milano Milano Italy

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5:30 AM - EE4.03
Changes in Electrical Transport of Amorphous Phase Change Materials upon Annealing

Daniel Krebs 1 Tobias Bachmann 1 6 Jasper L. M. Oosthoek 2 Prasad Jonnalagadda 1 Laurent Dellmann 1 Simone Raoux 3 Jennifer Luckas 4 Christophe Longeaud 5 Bart J. Kooi 2 Ralph Spolenak 6

1IBM Zurich Research Laboratory Rueschlikon Switzerland2University of Groningen Groningen Netherlands3IBM T.J. Watson Research Center Yorktown Heights USA4RWTH Aachen University Aachen Germany5Laboratoire de Gamp;#233;nie Electrique de Paris (CNRS UMR 8507) Paris France6ETH Zamp;#252;rich Zurich Switzerland

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5:45 AM - EE4.04
Drift of Activation Energy in Amorphous Phase Change Materials

Martin Wimmer 1 Martin Salinga 1 Christian Dellen 1 Matthias Kaes 1 Matthias Wuttig 1

1Institute of Physics (IA), RWTH Aachen University Aachen Germany

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EE5: Poster Session
Session Chairs
Tuesday PM, April 02, 2013
Marriott Marquis, Yerba Buena Level, Salons 7-8-9

9:00 AM - EE5.01
In-situ TEM Observation of Switching Process of Phase Change Random Access Memory Devices

Kyungjoon Baek 1 Kyung Song 1 Sung Kyu Son 2 Jang Won Oh 2 Ho Joung Kim 2 Sang Ho Oh 1

1POSTECH Pohang Republic of Korea2SK Hynix Icheon Republic of Korea

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9:00 AM - EE5.02
The Compositional Effect of Ag Doping on Phase Change Characteristics in Germanium Telluride Glasses

Jin Hwan Jeong 1 Doo Jin Choi 1

1Yonsei University Seoul Republic of Korea

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9:00 AM - EE5.03
Metastable Electrical Resistivity of Amorphous Ge2Sb2Te5 at Elevated Temperatures

Faruk Dirisaglik 1 Jonathan Rarey 1 Kadir Cil 1 Sadid Muneer 1 Lingyi Zhang 1 Yu Zhu 2 Chung Lam 2 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA2IBM Watson Research Center Yorktown Heights USA

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9:00 AM - EE5.04
Composition and Phase-tuned GeSbTe Nanowires

Chan Su Jung 1 Han Sung Kim 1 Hyung Soon Im 1 Young Seok Seo 1 Seung Hyuk Back 1 Yong Jae Cho 1 Chang Hyun Kim 1 Jeunghee Park 1 Jae-Pyoung Ahn 2

1Korea University Jochiwon Republic of Korea2Korea Institute of Science and Technology Seoul Republic of Korea

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9:00 AM - EE5.05
Atomic-structural Observation of GeSbTe Phase Change Memory Cell during the Set/Reset Operations

Yong Tae Kim 1 Minho Choi 2 Jinho Ahn 2 Hyunsoo Kim 1

1Korea Institute of Science and Technology Seoul Republic of Korea2Hanyang University Seoul Republic of Korea

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9:00 AM - EE5.06
Competition of Local Orders in Disordered Phase of Ge2Sb2Te5: Octahedral versus Tetrahedral Ge

Kye Yeop Kim 1 Seungwu Han 1

1Seoul National University Seoul Republic of Korea

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9:00 AM - EE5.07
Preparation and Characterization of Germanium Chalcogenide by Thermal Decomposition of Single Precursors for Phase Change Memory Ge2Sb2Te5 (GST)

Hyo-Suk Kim 1 2 Bo Keun Park 1 Chang Gyoun Kim 1 Seung Uk Son 2 Taek-Mo Chung 1

1Korea Research Institute of Chemical Technology Daejeon Republic of Korea2Sungkyunkwan University Suwon Republic of Korea

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9:00 AM - EE5.08
Multiphysics Modeling of Reset and Set Dynamics in Phase Change Memory

Takahiro Morikawa 1 Kenichi Akita 1 Takasumi Ohyanagi 1 Masahito Kitamura 1 Masaharu Kinoshita 1 Mitsuharu Tai 1 Norikatsu Takaura 1

1Low-power Electronics Association amp; Project Tsukuba Japan

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9:00 AM - EE5.09
Spectroscopic Ellipsometry Study of Metal to Insulator Transition in Vanadium Dioxide Thin Films

Jean-Christophe Orlianges 1 Rafika Zaabi 1 Corinne Champeaux 1 Aurelian Crunteanu 2

1SPCTS Limoges France2XLIM Limoges France

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9:00 AM - EE5.10
Ultrafast Coherent Phonon Dynamics of Amorphous Ge2Sb2Te5 Thin Films

Min Ju Shin 1 Dong Hak Kim 1 Daeyoung Lim 1

1Kyung Hee University Yongin Republic of Korea

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9:00 AM - EE5.11
Vibrational Properties of Phase-change Materials

Ralf Peter Stoffel 1 Marck Lumeij 1 Richard Dronskowski 1

1Institute of Inorganic Chemistry Aachen Germany

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9:00 AM - EE5.12
Sb2Te3 and Ge-doped Sb2Te3 Nanowires for Phase Change Memory Applications

Massimo Longo 1 Toni Stoycheva 1 Roberto Fallica 1 Claudia Wiemer 1 Laura Lazzarini 2 Enzo Rotunno 2

1CNR Agrate Brianza Italy2CNR Parma Italy

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9:00 AM - EE5.13
Low-volume-change High-crystallization-temperature Phase-change Material for High-performance Phase-change Memory by N-doping into GeTe

You Yin 1 Sumio Hosaka 1

1Gunma Univ. Kiryu Japan

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9:00 AM - EE5.14
Fast Operation and Freely Achievable Multiple Resistance Levels in GeTe-based Lateral Phase Change Memory

You Yin 1 Yulong Zhang 1 Sumio Hosaka 1

1Gunma Univ. Kiryu Japan

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9:00 AM - EE5.16
Extraction of Electrical Resistivity and Thermal Conductivity of Self-heated GST Micro-bridges

Sadid Muneer 1 Nafisa Noor 1 Gokhan Bakan 1 Yu Zhu 2 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA2IBM Watson Research Center Yorktown Heights USA

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EE0: Ovshinsky Commemoration
Session Chairs
Alexander Kolobov
Tuesday AM, April 02, 2013
Moscone West, Level 3, Room 3011

9:15 AM - EE0
EE0.01 Commemoration for Stanford Ovshinsky by Alexander Kolobov

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EE1: Crystallization Kinetics I
Session Chairs
Paul Fons
Tuesday AM, April 02, 2013
Moscone West, Level 3, Room 3011

9:30 AM - *EE1.01
Large Scale Molecular Dynamics Simulations of the Crystallization Dynamics of Amorphous and Liquid GeTe

Gabriele Cesare Sosso 1 Giacomo Miceli 1 Sebastiano Caravati 2 Joerg Behler 3 Marco Bernasconi 1

1University of Milano-Bicocca Milano Italy2ETHZ c/o USI-Campus Lugano Switzerland3Ruhr University Bochum Germany

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10:00 AM - *EE1.02
Crystallization Kinetics and the Fragility of the Supercooled Liquid in Phase-change Materials

Lindsay Greer 1 J. Orava 1

1University of Cambridge Cambridge United Kingdom

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10:30 AM - EE1
BREAK

11:00 AM - EE1.03
A New Approach in Optical Testing of Phase Change Materialsmdash;Towards a Consequential Quantification of Crystallization Kinetics

Egidio Carria 1 Martin Salinga 1 Andreas Kaldenbach 1 Manuel Bornhoefft 2 Julia Benke 1 Joachim Mayer 2 Matthias Wuttig 1

1RWTH Aachen Aachen Germany2RWTH Aachen Aachen Germany

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11:15 AM - EE1.04
Fast Turn-around Materials Characterization for Phase Change Memory Application Using a Static Laser Tester

Simone Raoux 1 Huai-Yu Cheng 2 Daniele Garbin 3 Roger Cheek 1 Anja Koenig 4 Matthias Wuttig 5

1IBM T. J. Watson Research Center Yorktown Heights USA2Macronix International Co., Ltd. Hsinchu Taiwan3Turin Polytechnic University Turin Italy4RWTH Aachen University Aachen Germany5RWTH Aachen University Aachen Germany

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11:30 AM - EE1.05
Crystallization of As-deposited and Melt-quenched Amorphous GST and GeTe Thin Film

Antonio Massimiliano Mio 1 Egidio Carria 2 Maria Miritello 3 Corrado Bongiorno 1 Maria Grazia Grimaldi 4 3 Emanuele Rimini 1

1IMM-CNR Catania Italy2Physikalisches Institut (IA) and JARA-FIT, RWTH Aachen University Aachen Germany3Matis-IMM-CNR Catania Italy4Universitamp;#224; di Catania Catania Italy

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11:45 AM - EE1.06
Nanosecond-scale Multi-frame Movies of Crystal Growth during In situ Laser Crystallization of GeTe

Melissa Santala 1 Bryan Reed 1 Simone Raoux 2 Teya Topuria 3 Thomas LaGrange 1 Geoffrey Campbell 1

1Lawrence Livermore National Laboratory Livermore USA2IBM T. J. Watson Research Center Yorktown Heights USA3Almaden Research Center San Jose USA

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12:00 PM - *EE1.07
Nanosecond Density Functional Simulation of Crystallization in GST-225

Robert O. Jones 1 Janne Kalikka 2 Jaakko Akola 3 4

1FZ Juelich Juelich Germany2University of Jyvaeskylae Jyvaeskylae Finland3Tampere University of Technology Tampere Finland4Aalto University Aalto Finland

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12:30 PM - EE1.08
Growth Morphology and Structure of Ge-Sb Thin Films at Multiple Length Scales

Gert Eising 1 Bart J. Kooi 1

1University of Groningen Groningen Netherlands

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12:45 PM - EE1.09
Observation and Modeling of Polycrystalline Grain Formation in GST-225

Geoffrey W. Burr 1 Pierre Tchoulfian 1 Teya Topuria 1 Clemens Nyffeler 1 Kumar Virwani 1 Alvaro Padilla 1 Robert M. Shelby 1 Mona Eskandari 2 1 Bryan Jackson 1 Bong-Sub Lee 3 4

1IBM Almaden Research Center San Jose USA2Stanford University Stanford USA3Invensas Corp San Jose USA4University of Illinois at Urbana-Champaign Urbana USA

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2013-04-03   Show All Abstracts

Symposium Organizers

Raffaella Calarco, Paul Drude Institute for Solid State Electronics
Paul Fons, Advanced Institute of Industrial Science and Technology
Bart J. Kooi, M2i University of Groningen
Martin Salinga, RWTH Aachen University
Martha (Salinga's Asst) Shafer-Thyen,
EE8: Neuromorphic Hardware/Reconfigurable Electronics
Session Chairs
Martin Salinga
Wednesday PM, April 03, 2013
Moscone West, Level 3, Room 3011

2:30 AM - *EE8.01
Programming Phase Change Synaptic Devices for Neuromorphic Computation

Duygu Kuzum 1 2 Rakesh G. D. Jeyasingh 1 Sukru B. Eryilmaz 1 Shimeng Yu 1 H.-S. Philip Wong 1

1Stanford University Stanford USA2University of Pennsylvania Philadelphia USA

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3:00 AM - *EE8.02
Beyond von-Neumann Computing with Phase-change Materials and Devices

C. David Wright 1 Harish Bhaskaran 1 Gerardo Hernandez-Rodriguez 1 Peiman Hosseini 1 Jorge A. Vazquez Diosdado 1 Wolfram H P Pernice 2

1University of Exeter Exeter United Kingdom2Karlsruher Institut famp;#252;r Technologie Eggenstein-Leopoldshafen Germany

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3:30 AM - EE8.03
Mixed Phase Ge2Sb2Te5 Thin Films with Temperature Independent Resistivity for Reconfigurable High Precision Resistors

Stefania Privitera 1 Cristina Garozzo 1 Alessandra Alberti 1 Giuseppe D'Arrigo 1 Luca Perniola 2 Barbara De Salvo 2 Emanuele Rimini 1

1IMM-CNR Catania Italy2CEA-LETI Grenoble-Cedex France

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3:45 AM - EE8.04
Reconfigurable Phase Change Switch

Nabila Adnane 1 Nadim Kanan 1 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA

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4:00 AM - EE8
BREAK

EE9: Thermal Aspects and Fabrication
Session Chairs
Paul Fons
Wednesday PM, April 03, 2013
Moscone West, Level 3, Room 3011

4:30 AM - *EE9.01
Engineering PCRAM with Low Current from the Material and Carrier Transportation Aspects

Rong Zhao 1 Luping Shi 1 Chun Chia Tan 1 Eng Guan Yeo 1 Leong Tat Law 1 Hongxin Yang 1 Eng Keong Chua 1 Tow Chong Chong 2

1Data Storage Institute Singapore Singapore2Singapore University of Technology amp; Design Singapore Singapore

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5:00 AM - EE9.02
Nanometer-scale Joule and Peltier Effects at Phase-change Memory Contacts

Kyle L. Grosse 1 Feng Xiong 2 Sungduk Hong 2 William P. King 1 Eric Pop 2

1University of Illinois Urbana USA2University of Illinois Urbana USA

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5:15 AM - EE9.03
Heat Conduction in Crystalline Phase Change Materials

Felix Rolf Lutz Lange 1 Karl Simon Siegert 1 Matthias Wuttig 1 2

1RWTH Aachen Aachen Germany2JARA Aachen Germany

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5:30 AM - EE9.04
The Study of Ge2Sb2Te5 Films Surface after Chemical Mechanical Planarization in Various Slurries Condition

Hyunsoo Kim 1 2 Jaihyung Won 2 Yongtae Kim 3 Manyoung Sung 1

1Korea University Seoul Republic of Korea2Memory Devision, Samsung Electronic Co. Ltd. Seoul Republic of Korea3Korea Institute of Science and Technology (KIST) Seoul Republic of Korea

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EE6/DD6: Joint Session: Phase-change Memory
Session Chairs
Martin Salinga
Bart J. Kooi
Wednesday AM, April 03, 2013
Moscone West, Level 3, Room 3008

9:45 AM - *EE6.01/DD6.01
Phase Change Memory: The Beginning of a New Story

Andrea Redaelli 1

1Micron Semiconductor Italia Agrate Brianza Italy

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10:15 AM - EE6.03/DD6.03
Finite Element Assessment of Rupture Oxide Phase Change Memory Cells

Nadim Kanan 1 Nicholas Eaton Williams 1 Azer Faraclas 1 Ali Gokirmak 1 Helena Silva 1

1University of Connecticut Storrs USA

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10:15 AM - EE6/DD6
EE6.02/DD6.02 ABSTRACT WITHDRAWN

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10:30 AM - EE6/DD6
BREAK

11:00 AM - *EE6.04/DD6.04
A Thermally Robust and Low Power Phase Change Memory by Material and Bottom Electrode Engineering

Huai-Yu Cheng 1 2 Chao-I Wu 1 2 Simone Raoux 1 3 Matthew BrightSky 1 3 Hsiang-Lan Lung 1 2 Chung Lam 1 3

1IBM/Macronix PCRAM Joint Project Yorktown Heights USA2Macronix International Co. Ltd. Hsinchu Taiwan3IBM T. J. Watson Research Center Yorktown Heights USA

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11:30 AM - EE6.05/DD6.05
Phase Change Memory with Graphene Ribbon Electrodes

Ashkan Behnam 1 Andrea Cappelli 2 Feng Xiong 1 Yuan Dai 1 Sungduk Hong 1 Enrique Carrion 1 Austin S Lyons 1 Enrico Piccinini 3 Carlo Jacoboni 2 Eric Pop 1

1University of Illinois Champaign USA2University of Modena and Reggio Emilia Modena Italy3University of Bologna Bologna Italy

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11:45 AM - EE6.06/DD6.06
An Amorphous Ion Implanted Chalcogenide Optoelectronic Information Processing Platform

Behrad Gholipour 1 Mark Hughes 2 Russell Gwilliam 2 Kevin Homewood 2 Tae-hoon Lee 3 Stephen Elliott 3 Richard Curry 2 Dan Hewak 1

1University of Southampton Southampton United Kingdom2University of Surrey Guildford United Kingdom3University of Cambridge Cambridge United Kingdom

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12:00 PM - EE6.07/DD6.07
Ultimate Scaling Limit of Phase Change Memory: An Ab Initio Study

Jie Liu 1 Manjeri P Anantram 1

1University of Washington Seattle USA

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EE7/DD7: Joint Session: Vanadium Oxide
Session Chairs
Bart J. Kooi
Daping Chu
Wednesday AM, April 03, 2013
Moscone West, Level 3, Room 3008

12:15 PM - EE7.01/DD7.01
Electrochemical Metalization Cells - Challenge for Chalcogenide Glasses

Tomas Wagner 1 Jakub Kolar 1 Silvie Valkova 1 Iva Voleska 1 Milos Krbal 1 Jan Macak 1 Miloslav Frumar 1 Kazuya Terabe 2

1University of Pardubice Pardubice Czech Republic2National Institute for Materials Science, 1-1 Namiki Tsukuba, Ibaraki, 305-0044 Japan

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2013-04-04   Show All Abstracts

Symposium Organizers

Raffaella Calarco, Paul Drude Institute for Solid State Electronics
Paul Fons, Advanced Institute of Industrial Science and Technology
Bart J. Kooi, M2i University of Groningen
Martin Salinga, RWTH Aachen University
Martha (Salinga's Asst) Shafer-Thyen,
EE12: Transport in the Crystalline Phase
Session Chairs
Bart J. Kooi
Thursday PM, April 04, 2013
Moscone West, Level 3, Room 3011

2:30 AM - *EE12.01
The Impact of Disorder on Transport in Crystalline Phase Change Materials

Matthias Wuttig 1 2

1RWTH Aachen University Aachen Germany2JARA - FIT Aachen Germany

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3:00 AM - EE12.02
Spin Storage in Interfacial Phase Change Memory Using Topological Insulating Property

Junji Tominaga 1 Alexander V. Kolobov 1 Paul Fons 1 Muneaki Hase 2 Shuichi Murakami 3

1AIST Tskuba Japan2University of Tsukuba Tskuba Japan3Tokyo Institute of Technology Meguro Japan

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3:15 AM - *EE12.03
Physics of Topological Insulators and Potential Applications to Phase-change Materials

Shuichi Murakami 1 2

1Tokyo Institute of Technology Tokyo Japan2Tokyo Institute of Technology Tokyo Japan

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3:45 AM - EE12
BREAK

EE13: Epitaxy and Single Crystals
Session Chairs
Raffaella Calarco
Thursday PM, April 04, 2013
Moscone West, Level 3, Room 3011

4:15 AM - *EE13.01
On the Epitaxy of Phase-change Materials

Alessandro Giussani 1 Karthick Perumal 1 Yukihiko Takagaki 1 Peter Rodenbach 1 Michael Hanke 1 Alexander V. Kolobov 2 Paul Fons 2 Henning Riechert 1 Raffaella Calarco 1

1Paul Drude Institut for Solid State Electronics Berlin Germany2National Institute of Advanced Industrial Science and Technology Tsukuba Japan

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4:45 AM - EE13.02
Composition Investigation of Single Crystalline Sb2Te3-Bi2Te3 Thin Film Alloys

Toma Stoica 1 Gregor Mussler 1 Joern Kampmeier 1 Astrid Besmehn 2 Hilde Hardtdegen 1 Sally Riess 1 Detlev Gruetzmacher 1

1Research Center Jamp;#252;lich Juelich Germany2Research Center Jamp;#252;lich Juelich Germany

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5:00 AM - EE13.03
Ab Initio Surface Studies of Phase-change Data-storage Materials

Volker L. Deringer 1 Marck Lumeij 1 Richard Dronskowski 1

1Institute of Inorganic Chemistry Aachen Germany

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5:15 AM - *EE13.04
Metalorganic Chemical Vapor Deposition and Functional Analysis of Ge-Sb-Te Nanowires for Scaled Phase Change Memories

Massimo Longo 1

1IMM-CNR Agrate Brianza Italy

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5:45 AM - EE13.05
Solution Based Synthesis of Individual Sb2Te3 Hexagonal Platelets and Their Resistive Switching Properties

Tobias Saltzmann 1 2 Michael Noyong 1 2 Ulrich Simon 1 2

1RWTH Aachen University Aachen Germany2Fundamentals of Future Information Technologies Jamp;#252;lich Germany

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EE10: Structure and Bonding
Session Chairs
Matthias Wuttig
Thursday AM, April 04, 2013
Moscone West, Level 3, Room 3011

9:00 AM - *EE10.01
Crucial Role of Te Lone-pair Electrons in GeSbTe Phase Change Memory Alloys

Alexander Kolobov 1 Paul J. Fons 1 Junji Tominaga 1

1AIST Tsukuba Japan

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9:30 AM - EE10.02
Chemical Bonds and Lone Pairs in Ge-Sb-Te Phase-change Materials

Tae-Hoon Lee 1 Stephen Elliott 1

1University of Cambridge Cambridge United Kingdom

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9:45 AM - EE10.03
Investigation of the Oxidation Process in GeTe-based Phase Change Alloys

Milos Krbal 1 2 Xiaomin Wang 2 Jan Richter 2 Alexander Kolobov 2 3 Paul Fons 2 3 Junji Tominaga 2 Kiyofumi Nitta 3 Tomoya Uruga 3

1University of Pardubice Pardubice Czech Republic2National Institute of Advanced Industrial Science and Technology Tsukuba Japan3Japan Synchrotron Radiation Research Institute Sayo Japan

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