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2013 MRS Spring Meeting & Exhibit

April 1-5, 2013 | San Francisco
Meeting Chairs: Mark L. Brongersma, Vladimir Matias, Rachel Segalman, Lonnie D. Shea, Heiji Watanabe

Symposium DD : Emerging Materials and Devices for Future Nonvolatile Memories

2013-04-02   Show All Abstracts

Symposium Organizers

Yoshihisa Fujisaki, Hitachi Ltd.
Panagiotis Dimitrakis, NCSR "Demokritos"
Daping Chu, University of Cambridge
Daniel Worledge, IBM T. J. Watson Research Center

Symposium Support

M. Watanabe amp; Co., Ltd.
Micron Technology Foundation, Inc.
Radiant Technologies, Inc
DD3: MRAM-FeRAM
Session Chairs
Daping Chu
Guohan Hu
Tuesday PM, April 02, 2013
Moscone West, Level 3, Room 3008

2:30 AM - *DD3.01
Spin-transfer Torque RAM with Perpendicular Magnetic Materials

Guohan Hu 1

1IBM T J Watson Research Center Yorktown Heights USA

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3:00 AM - DD3.02
Light-induced Magnetization Reversal of High-anisotropy TbCo Alloy Films

Mirko Cinchetti 1 Sabine Alebrand 1 Matthias Gottwald 2 3 Michel Hehn 2 Daniel Steil 1 Daniel Lacour 2 Eric E. Fullerton 3 Martin Aeschlimann 1 Stephane Mangin 2

1University of Kaiserslautern Kaiserslautern Germany2UMR CNRS 7198, Universitamp;#233; de Lorraine Vandoeuvre-lamp;#232;s-Nancy France3University of California San Diego USA

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3:15 AM - DD3.03
High Tc Low Dimensional Semiconducting Ferromagnetic Iron Selenides for Spintronics

Pierre Ferdinand Poudeu Poudeu 1

1University of Michigan Ann Arbor USA

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3:30 AM - DD3.04
Flexible Nonvolatile Ferroelectric Memory Based on a ZnO Nanowire Field Effect Transistor

Young Tea Chun 1 Stanko Nedic 2 Mark Welland 2 Daping Chu 1

1University of Cambridge Cambridge United Kingdom2University of Cambridge Cambridge United Kingdom

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3:45 AM - DD3.05
Charge-mediated Coupling in Ferroelectric/Ferromagnet Heterostructures: A Variety of Phenomena for Non-volatile Memories

Igor Stolichnov 1 Evgeny Mikheev 1 Zhen Huang 1 Andrew W Rushforth 2 Richard P Campion 2 Kevin W Edmonds 2 Bryan L Gallagher 2 Elisa De Ranieri 3 Joerg Wunderlich 3 Sebastian Riester 1 Nava Setter 1

1EPFL-Swiss Federal Institute of Technology Lausanne Switzerland2University of Nottingham Nottingham United Kingdom3Hitachi Cambridge Laboratory Cambridge United Kingdom

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4:00 AM - DD3
Break

DD4: Memristors
Session Chairs
Albert Chin
Panagiotis Dimitrakis
Tuesday PM, April 02, 2013
Moscone West, Level 3, Room 3008

4:30 AM - *DD4.01
Nonvolatile Programmable Logic Array Using Complementary Atom Switch

Toshitsugu Sakamoto 1 Makoto Miyamura 1 Munehiro Tada 1 Hiromitsu Hada 1

1LEAP Tsukuba Japan

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5:00 AM - DD4.02
Pattern Classification by Memristive Crossbar Circuits with Ex-situ and In-situ Training

Fabien Alibart 1 2 Elham Zamanidoost 2 Dmitri B Strukov 2

1IEMN-CNRS Villeneuve d'ascq France2UCSB Santa Barbara USA

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5:15 AM - DD4.03
Nitride Memristors

Byung Joon Choi 1 Antonio C. Torrezan 1 Douglas A. A. Ohlberg 1 John Paul Strachan 1 Min-Xian Zhang 1 Jianhua Joshua Yang 1 Dick Henze 1 R. Stanley Williams 1

1Hewlett Packard Labs Palo Alto USA

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5:30 AM - DD4.04
Direct Observation of Joule-heating-driven Switching in VO2 Mott Memristors

Suhas Kumar 1 2 Matthew D Pickett 1 John Paul Strachan 1 Gary Gibson 1 Yoshio Nishi 2 R. Stanley Williams 1

1HP Labs Palo Alto USA2Stanford University Palo Alto USA

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5:45 AM - DD4.05
State Dynamics and Modeling of Tantalum Oxide Memristors

John Paul Strachan 1 Antonio Torrezan 1 Matthew Pickett 1 J. Joshua Yang 1 R. Stanley Williams 1

1HP Labs Palo Alto USA

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DD5: Poster Session: Flash and Organic Memories
Session Chairs
Panagiotis Dimitrakis
Michael Petty
Tuesday PM, April 02, 2013
Marriott Marquis, Yerba Buena Level, Salons 7-8-9

9:00 AM - DD5.01
Nonvolatile Memory MOS Capacitors Made of CdSe Embedded ZrHfO High-k Gate Dielectric

Chi-Chou Lin 1 Yue Kuo 1

1TAMU CollegeStation USA

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9:00 AM - DD5.02
Charge Transport Behavior in Pt-Fe2O3 Core-shell Nanoparticle Attached ZnO Nanowires for Nonvolatile Memory Device Application

Seung Chang Lee 1 Quanli Hu 2 Jin-Yong Lee 1 Chi Jung Kang 3 Tae-Sik Yoon 1 2

1Myongji University Yongin Republic of Korea2Myongji University Yongin Republic of Korea3Myongji University Yongin Republic of Korea

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9:00 AM - DD5.03
Multi-bit Operation in Non Volatile Memory Devices Using Controlled Charging Behavior for Double Layer Floating Gate Devices

Balavinayagam Ramalingam 1 Haisheng Zheng 1 Shubhra Gangopadhyay 1

1University of Missouri Columbia USA

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9:00 AM - DD5.04
Resistive Switching in Metal-nanowire/Polymer Nano-gap Devices

Rose M. Mutiso 1 James K. Kikkawa 2 Karen I. Winey 1

1University of Pennyslvania Philadelphia USA2University of Pennsylvania Philadelphia USA

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9:00 AM - DD5.05
Low Voltage Memory Transistors with Gold Nanoparticles Embedded in Poly(methyl methacrylate) on Flexible Substrate

Ye Zhou 1 Su-Ting Han 1 A L Roy Vellaisamy 1

1City University of Hong Kong Hong Kong Hong Kong

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9:00 AM - DD5.06
Shining Light on Organic Memories: Influence of Photonic Excitation on Organic and Organic/Inorganic Hybrid Memory Devices

Sebastian Nau 1 Stefan Sax 1 Emil J. W. List 1 2

1NanoTecCenter Weiz Forschungsgesellschaft mbH Weiz Austria2Graz University of Technology Graz Austria

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9:00 AM - DD5.09
WORM Memory Devices Using Poly (9-vinylcarbazole)

Aswin Suresh 1 Govind Ka 1 Manoj AG Namboothiry 1

1Indian Institute of Science Education and Research Thiruvananthapuram Thiruvananthapuram India

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9:00 AM - DD5.10
Non-volatile Hybrid Memory Elements Based on Metal Nanoparticles and Organic Semiconductor Materials: Device Performance and Structural Properties

Giulia Casula 1 Piero Cosseddu 1 Jiri Novak 2 Frank Schreiber 2 Yan Busby 3 Jean-Jacques Pireaux 3 Annalisa Bonfiglio 1 Piero Cosseddu 1 Annalisa Bonfiglio 1

1University of Cagliari Cagliari Italy2Universitaet Tuebingen Tuebingen Germany3University of Namur Namur Belgium

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DD1: Advanced Flash
Session Chairs
Yoshihisa Fujisaki
Panagiotis Dimitrakis
Tuesday AM, April 02, 2013
Moscone West, Level 3, Room 3008

9:30 AM - *DD1.01
Metrics for Emerging Memories

Kirk Prall 1

1Micron Technology Boise USA

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10:00 AM - DD1.02
Dielectric Breakdown-induced Nanostructural Defects Evidenced by Transmission Electron Microscopy in Silicon Nanocrystal Memories

Emilie Faivre 1 2 Vincenzo Della Marca 1 2 Damien Deleruyelle 1 Roxane Llido 2 3 Lahouari Fares 2 Magali Putero 1 Jean-Luc Ogier 2 Philippe Boivin 2 Christophe Muller 1

1IM2NP Marseille France2STMicroelectronics Rousset France3IMS Talence France

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10:15 AM - DD1.03
Piezotronic Nanowire Based Resistive Switches as Programmable Nanoelectromechanical Memories

Wenzhuo Wu 1 Zhong Lin Wang 1 2

1Georgia Institute of Technology Atlanta USA2Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences Beijing China

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10:30 AM - *DD1.04
1T-1R Architecture with Fully CMOS-compatible RRAM Cell to Realize 4F2 Footprint for High Density Nonvolatile Memory Application

Zheng Fang 1 Xinpeng Wang 1 Zhixian Chen 1 Aashit Kamath 1 Guo-Qiang Lo 1 Dim-Lee Kwong 1 Kah Wee Ang 1

1Institute of Microelectronics Singapore Singapore

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11:00 AM - DD1
Break

DD2: Organic Memories
Session Chairs
Daping Chu
Panagiotis Dimitrakis
Tuesday AM, April 02, 2013
Moscone West, Level 3, Room 3008

11:30 AM - *DD2.01
Filament Formation in Memory Devices Based on Thin Organic Films

Christopher Pearson 1 Leon Bowen 3 Myung-Won Lee 1 Alison L. Fisher 1 Katharine E. Linton 2 Martin R. Bryce 2 Michael C. Petty 1

1Durham University Durham United Kingdom2Durham University Durham United Kingdom3Durham University Durham United Kingdom

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12:00 PM - DD2.02
Organic Thin-film Memory Transistors Based on C60 Charge Storage Units in Dielectric Monolayers

Artoem Khassanov 1 Alexei Vorobiev 2 Thomas Schmaltz 1 Andreas Hirsch 3 Marcus Halik 1

1Friedrich-Alexander-University Erlangen-Nuremberg Erlangen Germany2European Synchrotron Radiation Facility Grenoble France3Friedrich-Alexander-University Erlangen-Nuremberg Erlangen Germany

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12:15 PM - DD2.03
Electrical and Structural Properties of Nanoimprinted Ferroelectric Polymer Arrays for Non-volatile Memory Applications

Hailu Gebru Kassa 1 Laurianne Nougaret 1 Ronggang Cai 1 Alain M. Jonas 1

1Universitamp;#233; catholique de Louvain Louvain-la-Neuve Belgium

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