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Fall 2008 Logo2008 MRS Fall Meeting & Exhibit

December 1-5, 2008 | Boston
Meeting Chairs:
 S. Ashok, Shenda M. Baker, Michael R. Fitzsimmons, Young-Chang Joo

Symposium A : Performance and Reliability of Semiconductor Devices

2008-12-01   Show All Abstracts

Symposium Organizers

Michael Mastro U.S. Naval Research Laboratory
Jeffrey LaRoche Raytheon RF Components
Fan Ren University of Florida
Jen-Inn Chyi National Central University
Jihyun Kim Korea University
A1: GaN Devices
Session Chairs
Martin Kuball
Kurt Smith
Monday PM, December 01, 2008
Room 202 (Hynes)

9:00 AM - A1.1
Considerations for Integrating Functional Oxides with Gallium Nitride.

Mark Losego 1 , H. Spalding Craft 1 , Elizabeth Paisley 1 , Ramon Collazo 1 , Anthony Rice 1 , Seiji Mita 1 , Zlatko Sitar 1 , Jon-Paul Maria 1
1 Materials Science, North Carolina State University, Raleigh, North Carolina, United States

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9:15 AM - A1.2
Schottky and Ohmic Contacts on Non-Polar Cubic Gan Epilayers.

Donat As 1 , Elena Tschumak 1 , Irina Laubenstein 1 , Ricarda Kemper 1 , Klaus Lischka 1
1 Department of Physics, University of Paderborn, Paderborn Germany

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9:30 AM - **A1.3
Overview of GaN HEMT Technology and its Future Outlook Beyond Power Performance.

Eduardo Chumbes 1
1 , RF Components, Ratheon Integrated Defense Systems, Andover, Massachusetts, United States

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10:00 AM - **A1.4
High Temperature Stable Contacts for GaN HEMTs and LEDs.

S. Pearton 1 , L. Voss 1 , R. Khanna 1 , F. Ren 2 , A. Dabiran 3 , A. Osinsky 3
1 Materials Science and Engineering, University of Florida, Gainesville, Florida, United States, 2 Chemical Engineering, University of Florida, Gainesville, Florida, United States, 3 , SVT Associates, Eden Prairie, Minnesota, United States

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10:30 AM - A1.5
Geiger-mode and Linear-mode Operation of Deep-ultraviolet Avalanche Photodiodes Based on Homoepitaxial GaN PIN Diodes.

Suk Choi 1 , Hee Jin Kim 1 , Jae-Hyun Ryou 1 , Yun Zhang 1 , Shyh-Chiang Shen 1 , Xiaogang Bai 2 , Joe Campbell 2 , Russell Dupuis 1
1 School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia, United States

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10:45 AM - A1.6
Surface-state Induced Transients in Gallium Nitride Nanowires.

Blake Simpkins 1 , M. Mastro 1 , C. Eddy 1 , P. Pehrsson 1
1 , Naval Research Lab, Washington, District of Columbia, United States

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11:00 AM - A1: GaN Devices
BREAK

A2: GaN Device Reliability
Session Chairs
Eduardo Chumbes
Steve Pearton
Monday PM, December 01, 2008
Room 202 (Hynes)

11:15 AM - **A2.1
GaN HEMT Reliability: An Industrial Perspective.

Kurt Smith 1
1 , Raytheon RF Components, Andover, Massachusetts, United States

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11:45 AM - **A2.2
Temperature, Stress and Reliability of Power Transistors: Sub-Micron and Nanosecond Raman Thermography.

Martin Kuball 1 , Andrei Sarua 1 , James Pomeroy 1 , Gernot Riedel 1 , Richard J. Simms 1 , Athikom Manoi 1 , Hangfeng Ji 1 , Timothy Batten 1 , Michael Uren 2 , Trevor Martin 2
1 H.H. Wills Physics Laboratory, University of Bristol, Bristol United Kingdom, 2 , QinetiQ Ltd., Malvern United Kingdom

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12:15 PM - A2.3
Measurement of AlGaN/GaN High-Electron-Mobility-Transistor Device Temperature Under DC Bias by μ-Photoluminescence Mapping.

Bruce Claflin 1 2 , E. Heller 1 2 , J. Gillespie 3 , G. Jessen 3
1 Semiconductor Research Center, Wright State University, Dayton, Ohio, United States, 2 Materials and Manufacturing Directorate, AFRL/RXPS, WPAFB, Ohio, United States, 3 Sensors Directorate, AFRL/RYDD, WPAFB, Ohio, United States

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12:30 PM - **A2.4
Correlation Among Material Quality, Performance and Reliability of High Power and High Frequency AlGaN/GaN HFET.

Yasushi Nanishi 1
1 Photonics, Ritsumeikan University, Kusatsu Japan

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A3: GaN Transistors
Session Chairs
Eduardo Chumbes
Russell Dupuis
Monday PM, December 01, 2008
Room 202 (Hynes)

2:30 PM - **A3.1
Recent Progress on GaN HEMTs.

Shigeru Nakajima 1 , Yasunori Tateno 1 , Seigo Sano 1
1 , Eudyna Devices Inc., Yokohama Japan

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3:00 PM - A3.2
Integration of High Dielectric Constant Epitaxial Oxide for GaN-based MOS Devices.

Jesse Jur 1 , Virginia Wheeler 1 , Michael Morgensen 2 , Matthew Veety 2 , Daniel Lichtenwalner 1 , Doug Barlage 2 , Mark Johnson 1
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, United States

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3:15 PM - A3.3
Electrical and Structural Properties of Proton Irradiated AlGaN/GaN HEMTs.

Hong-Yeol Kim 1 , Jihyun Kim 1 , Travis Anderson 2 , Fan Ren 2 , Stephen Peaton 3
1 Chemical and Biological engineering, Korea University, Seoul Korea (the Republic of), 2 Chemical engineering, Florida University, Gainesville, Florida, United States, 3 Material science and engineering, Florida University, Gainesville, Florida, United States

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3:30 PM - A3.4
Normally Off AlGaN/GaN HEMTs with AlGaN Back Barrier.

Vibhu Jindal 1 , Neeraj Tripathi 1 , Fatemeh Shahedipour-Sandvik 1 , Siddharth Rajan 2 , Alexei Vert 2
1 College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York, United States, 2 , General Electric Global Research Center, Niskayuna, New York, United States

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3:45 PM - A3.5
Optical Characterization of Orientation-Patterned GaN Templates by μ-Photoluminescence and μ-Raman Mapping.

Bruce Claflin 1 2 , R. Collazo 3 , A. Rice 3 , Z. Sitar 3
1 Semiconductor Research Center, Wright State University, Dayton, Ohio, United States, 2 Materials and Manufacturing Directorate, AFRL/RXPS, WPAFB, Ohio, United States, 3 Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States

Show Abstract

4:00 PM - A3: GaN FETs
BREAK

A4: GaN Material Development
Session Chairs
Martin Kuball
Kurt Smith
Monday PM, December 01, 2008
Room 202 (Hynes)

4:15 PM - **A4.1
Recent Achievement in the GaN Epitaxy on Silicon and Engineering Substrates.

Bove Philippe 1 , Hacene Lahreche 1 , Arnaud Wilk 1 , Robert Langer 1 , Melania Lijadi 1
1 Research & Developement, picogiga International SAS, Courtaboeuf France

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4:45 PM - A4.2
Strain Evolution Study by Nondestructive Methods in Large Area Dislocation Reduced GaN on Engineered AlN/Si Substrate.

Mihir Tungare 1 , Neeraj Tripathi 1 , Vibhu Jindal 1 , Gayathri Rao 1 , Vimal Kamineni 1 , Alain Diebold 1 , Robert Geer 1 , Fatemeh Shahedipour-Sandvik 1
1 College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York, United States

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5:00 PM - A4.3
Assessment of the Surface Electron Accumulation Properties of Polar and Non-Polar InN Surfaces.

Tino Hofmann 1 , V. Darakchieva 2 , B. Monemar 2 , H. Lu 3 , W. Schaff 3 , L. Chen 4 , Y. Nanishi 5 , M. Schubert 1
1 , University of Nebraska-Lincoln, Lincoln, Nebraska, United States, 2 , Linköping University, Linkoping Sweden, 3 , Cornell University, Uijungbu Korea (the Republic of), 4 , National Taiwan University, Taipei Taiwan, 5 , Ritsumeikan University, Shiga Japan

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5:15 PM - A4.4
Facet Stabilization Study in MOCVD grown III-Nitride Nanostructures.

Vibhu Jindal 1 , Nirag Kadakia 1 , Fatemeh Shahedipour-Sandvik 1
1 College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York, United States

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5:30 PM - A4.5
Growth and Characterization of AlGaN Grown by Digitally-Alloyed Modulated Precursor Flow Epitaxy: A New Growth Scheme for AlGaN with High Al Content.

Hee Jin Kim 1 , Suk Choi 1 , Jae-Hyun Ryou 1 , Russell Dupuis 1
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States

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5:45 PM - A4.6
Optimization of GaN Barriers During the Growth of InGaN/GaN Quantum Wells at Low Temperature.

Kalyan R Kasarla 1 , W. Chiang 1 , D. Korakakis 1
1 Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia, United States

Show Abstract

2008-12-02   Show All Abstracts

Symposium Organizers

Michael Mastro U.S. Naval Research Laboratory
Jeffrey LaRoche Raytheon RF Components
Fan Ren University of Florida
Jen-Inn Chyi National Central University
Jihyun Kim Korea University
A5: Nano Devices
Session Chairs
Charles Eddy
Blake Simpkins
Tuesday AM, December 02, 2008
Room 202 (Hynes)

9:30 AM - A5.1
Quantum Dot Nanodevice with Electron-lattice Coupling.

Karel Kral 1
1 , Institute of Physics, ASCR, v.v.i., Prague 8 Czechia

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9:45 AM - A5.2
High Performance Field-effect-transistors and Logic Circuits Constructed on CdS Nanowires/belts.

Lun Dai 1
1 School of Physics, Peking University, Beijing China

Show Abstract

10:00 AM - A5.3
Superior Neutron-irradiation Hardness for Solution-grown ZnO Nanocrystals.

Elena Flitsiyan 1 , Casey Schwartz 1 , Robert Peale 1 , Oleg Lupan 1 2 , Leonid Chernyak 1 , Lee Chow 1 , William Vernetson 3
1 Physics, University of Central Florida, Orlando, Florida, United States, 2 Microelectronics/ Semiconductor devices, Tech Univ Moldova, Chisinau Moldova (the Republic of), 3 Nuclear Radiological Eng, Univ of Florida, Gainsville, Florida, United States

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10:15 AM - A5.4
Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior.

Faquir Jain 1 , Mukesh Gogna 1 , Fuad Alamoody 1 , Suprya Karnakar 1 , Ernesto Suarez 1 , John Chandy 1 , Evan Heller 2
1 Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, United States, 2 Design Group, RSoft Inc, Ossinings, New York, United States

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10:30 AM - A5.5
Barrier Heights at Nanoscale Metal-Semiconductor Contacts.

Ramsey Kraya 1 , Dawn Bonnell 1
1 Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania, United States

Show Abstract

10:45 AM - A5: Nano
BREAK

A6: Optoelectronics
Session Chairs
Charles Eddy
Michael Shur
Tuesday PM, December 02, 2008
Room 202 (Hynes)

11:30 AM - A6.2
Mass Production of Optoelectronic Devices for Solid-State-Lighting (SSL).

K. Christiansen 1 , B. Schoettker 1 , A. Boyd 1 , B. Schineller 1 , Brian Dlugosch 1 , C. Sommerhalter 1 , R. Schreiner 1 , M. Heuken 1
1 , AIXTRON AG, Aachen Germany

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11:45 AM - A6.3
Growth and Performance of InP/InAlGaAs Light Emitting Transistors and Transistor Lasers.

Russell Dupuis 1 , Yong Huang 1 , Jae-Hyun Ryou 1 , Forest Dixon 2 , Milton Feng 2 , Nick Holonyak 2
1 School of ECE, Georgia Institute of Technology, Atlanta, Georgia, United States, 2 Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois, United States

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12:00 PM - A6.4
Cathodoluminescence Study of the Defects Created by the Degradation of High Power AlGaAs/GaAs Multiemitter Laser Bars.

Alonso Martin 1 , Pilar Iniguez 1 , Manuel Avella 1 , Juan Jimenez 1 , Myriam Oudart 2 , Julien Nagle 3
1 Física Materia Condensada, Universidad de Valladolid, Valladolid Spain, 2 , Alcatel Thales 3-5 Lab, Palaiseau France, 3 , Thales Research and Technology (TRT), Palaiseau France

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12:15 PM - A6.5
Comparative Characteristics of GaAs Detectors and Silicon Pixel Detectors with Internal Amplification.

Gennady Koltsov 1 , V. Murashev 1 , A. Chubenko 2 , R. Mukhamedshin 3 , G. Britvich 4 , S. Chernykh 1 , A. Chernykh 1
1 , Moscow State Institute of Steel and Alloys, Moscow, -, Russian Federation, 2 , Lebedev Physical Institute of RAS, Moscow Russian Federation, 3 , Institute for Nuclear Research of RAS, Moscow Russian Federation, 4 , Institute for High Energy Physics, Protvino Russian Federation

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12:30 PM - A6.6
Single Longitudinal Mode InGaAsSb/AlGaAsSb Lasers for Gas Sensing.

Pedro Barrios 1 , James Gupta 1 , Jean Lapointe 1 , Geoffrey Aers 1 , Craig Storey 1
1 Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, Canada

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12:45 PM - A6.7
Metamorphic GaAsP ~1.7 eV Solar Cell Materials and Structures Grown on Si Substrates Using Anion-Graded GaAsyP1-y Buffers.

Tyler Grassman 1 , Mark Brenner 1 , Andrew Carlin 1 , Steve Ringel 1
1 Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio, United States

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A7: SiC Devices
Session Chairs
Kurt Gaskill
John Williams
Tuesday PM, December 02, 2008
Room 202 (Hynes)

2:30 PM - **A7.1
4H-SiC Power DMOSFETs – Performance and Reliability.

Sei-Hyung Ryu 1 , Sarah Haney 1 , Sarit Dhar 1 , Brett Hull 1 , James Richmond 1 , Craig Capell 1 , Anant Agarwal 1
1 , Cree, Inc., Durham, North Carolina, United States

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3:00 PM - **A7.2
Growth of High Quality SiC for Power Device Applications.

Charles Eddy 1 , Brenda VanMil 1 , Kok-Keong Lew 1 , Rachael Myers-Ward 1 , Kurt Gaskill 1 , Robert Stahlbush 1 , Yoosuf Picard 1 , Mark Twigg 1 , Paul Klein 1 , Evan Glaser 1 , Ronald Holm 1 , Joshua Caldwell 1
1 , U.S. Naval Research Laboratory, Washington, District of Columbia, United States

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3:30 PM - **A7.3
Low Defect Density Silicon Carbide Epitaxial Layers for Large-Area, High-Power Devices.

Al Burk 1 , Michael O'Loughlin 1 , Jonathan Young 1 , Lara Garrett 1 , Joe Sumakeris 1
1 , Cree, Durham, North Carolina, United States

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4:00 PM - A7.4
Electrical Characterization of Epitaxial MgO on SiC.

Agham Posadas 1 , Fred Walker 1 , Charles Ahn 1 , Trevor Goodrich 2 , Zhuhua Cai 2 , Katherine Ziemer 2
1 Applied Physics, Yale University, New Haven, Connecticut, United States, 2 Chemical Engineering, Northeastern University, Boston, Massachusetts, United States

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4:15 PM - A7: SiC Devices
BREAK

A8: THz and Graphene Devices
Session Chairs
Al Burk
Sei-Hyung Ryu
Tuesday PM, December 02, 2008
Room 202 (Hynes)

4:30 PM - **A8.1
Graphene Films Synthesized under High Vacuum Conditions in a CVD Reactor.

D. Kurt Gaskill 1 , B. VanMil 1 , P. Campbell 1 , J. Culbertson 1 , G. Jernigan 1 , R. Myers-Ward 1 , J. McCrate 1 , S. Kitt 1 , C. Eddy Jr. 1
1 , Naval Research Laboratory, Washington, District of Columbia, United States

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5:00 PM - **A8.2
Terahertz Transistors.

Michael Shur 1
1 , Rensselaer, Troy, New York, United States

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5:30 PM - A8.3
Emission of Terahertz Radiation from SiC.

Jared Strait 1 , Paul George 1 , Shriram Shivaraman 1 , Mvs Chandrashekhar 1 , Farhan Rana 1 , Michael Spencer 1
1 Electrical and Computer Engineering, Cornell University, Ithaca, New York, United States

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5:45 PM - A8.4
Terahertz Ellipsometry Using Electron-Beam Based Sources.

Tino Hofmann 1 , C. Herzinger 2 , U. Schade 3 , M. Mross 4 , J. Woollam 2 , M. Schubert 1
1 , University of Nebraska-Lincoln, Lincoln, Nebraska, United States, 2 , J.A. Woollam Co., Lincoln, Nebraska, United States, 3 , BESSY mbH, Berlin Germany, 4 , Vermont Photonics Technologies Co., Bellows Falls, Vermont, United States

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A9: Poster Session: Semiconductor Devices
Session Chairs
Jeffrey LaRoche
Wednesday AM, December 03, 2008
Exhibition Hall D (Hynes)

9:00 PM - A9.1
DLTS Study of Inductively Coupled Plasma Induced Defects in the Near-surface Region of N-type GaN.

Yutaka Tokuda 1 , Kazuki Akiyama 1 , Takeshi Seo 1 , Hiroyuki Ueda 2 , Osamu Ishiguro 2 , Narumasa Soejima 2 , Tetsu Kachi 2
1 Department of Electrical and Electronics Engineering, Aichi Institute of Technology, Toyota Japan, 2 , Toyota Central R&D Labs. Inc., Aichi Japan

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9:00 PM - A9.10
In Situ Passivation and Modification of GaAs Surface using TBP by MOVPE.

Hong-Liang Lu 1 , Yuki Terada 1 , Momoko Deura 1 , Yukihiro Shimogaki 2 , Yoshiaki Nakano 3 , Masakazu Sugiyama 1
1 Department of Electronic Engineering, The University of Tokyo, Tokyo Japan, 2 Department of Materials Engineering, The University of Tokyo, Tokyo Japan, 3 Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo Japan

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9:00 PM - A9.11
Fabrication and Electrical Properties of Metal/Double-Insulator/Metal Diode.

Kwang Nam Choi 1 , Jun-woo Park 2 , Hosun Lee 2 , Kwan Soo Chung 1
1 Electronic Engineering, KyungHee University, Yongin-si, Gyenggi-do, Korea (the Republic of), 2 Physics and applied phyhsics, Kyunghee University, Yongin-si, Gyenggi-do, Korea (the Republic of)

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9:00 PM - A9.12
Device Performance and Reliability Characterization of Interface and Bulk Effect in Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin Film Transistor.

Kwang-Il Choi 1 , Dong-Ho Nam 1 , Sung-Soo Park 1 , Jae-Kyeong Jeong 2 , Ga-Won Lee 1
1 Electronic Engineering, ChungNam National University, DaeJeon, Yuseong-Gu, Korea (the Republic of), 2 Corporate R&D Center, Samsung SDI Co., Kiheung-Gu, Yongin-Si, Gyeonggi-Do, Korea (the Republic of)

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9:00 PM - A9.13
Source/Drain Overlap Length Dependence of VT in Thin Film Transistor on a-IGZO Channel Deposited by RF and DC Sputtering.

Dong Ho Nam 1 , Kwang-Il Choi 1 , Sung-Soo Park 1 , Jae-Kyeong Jeong 2 , Ga-Won Lee 1
1 Electronic Engineering, Chungnam National University, Daejeon, Yuseong-Gu, Korea (the Republic of), 2 Corporate R&D Center, Samsung SDI Co., Yongin-Si, Gyeonggi-Do/Kiheung-Gu, Korea (the Republic of)

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9:00 PM - A9.14
Admittance and Impedance Spectroscopy of Mn-, Co-, Ni-, and Cr-doped ZnO.

Youn-Woo Hong 1 , Hyo-Soon Shin 1 , Dong-Hun Yeo 1 , Jong-Hee Kim 1
1 IT Module Team, Division of Fusion & Convergence Tech., Korea Institute of Ceramic Engineering & Technoloy, Seoul Korea (the Republic of)

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9:00 PM - A9.15
Effect of Underlayer in the Growth of Ta2O5 Films Prepared using MOCVD Method for Metal-Insulator-Metal Capacitors in RF-BiCMOS Technology.

Namwoong Paik 1 , Kaman Lau 1 , Ajita Rajan 1 , Margaret McDonald 1 , William America 1 , Daniel Codi 1
1 , NXP Semiconductor, Hopewell Junction, New York, United States

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9:00 PM - A9.16
Multiprobe Atomic Force Nanoelectrical and Chemical Probing of Semiconductor Structures.

Aaron Lewis 1 , Hesaham Taha 2 , Andrey Ignatov 2 , Oleg Zhinoviev 2 , Anatoly Komissar 2 , Sasha Krol 2 , David Lewis 2
1 , The Hebrew University, Jerusalem Israel, 2 , Nanonics Imaging Ltd., Jerusalem Israel

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9:00 PM - A9.17
Impact of an AlN Interlayer on the Transport Properties of AlGaN/GaN Heterostructure on Silicon at Both Low and High Temperatures.

Mo Ahoujja 1 , Said Elhamri 1 , William Mitchel 2 , Rex Berney 1 , J. Roberts 3 , P. Rajagopal 3 , J. Cook 3 , E. Piner 3 , K. Linthicum 3
1 Physics, University of Dayton, Dayton, Ohio, United States, 2 , AFRL, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio, United States, 3 , Nitronex Corporation, Durham, North Carolina, United States

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9:00 PM - A9.18
Effect of In as Surfactant on the Growth of AlN/GaN Distributed Bragg Reflectors by Metal Organic Vapor Phase Epitaxy.

Lee Rodak 1 , Dimitris Korakakis 1 2
1 Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, West Virginia, United States, 2 , National Energy Technology Laboratory, Morgantown, West Virginia, United States

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9:00 PM - A9.2
High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors.

Nobuhito Wakimura 1 , Yugo Nakagawa 1 , Hirohisa Taguchi 1 , Tsutom Iida 1 , Yoshifumi Takanadhi 1
1 , Tokyo University of Science, Chiba Japan

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9:00 PM - A9.21
Theoretical Investigation of Adatom Kinetics on III-Nitride Surfaces.

Vibhu Jindal 1 , Fatemeh Shahedipour-Sandvik 1
1 College of Nanoscale Science and Engineering, University at Albany, State University of New York, Albany, New York, United States

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9:00 PM - A9.22
Resistive Switching Properties of N-implanted TiO2 Thin Films for Nonvolatile Memory Application.

Young Ho Do 1 , June Sik Kwak 1 , Jin Pyo Hong 1
1 physics, Hanyang University, seoul Korea (the Republic of)

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9:00 PM - A9.23
Nanoporous Arrays on Blue InGaN/GaN Light Emitting Diodes using Anodic Aluminum Oxide Masks.

Ha Doan 1 , Duy Nguyen 1 , Sangin Kim 1 , Hanjo Lim 1 , Fabian Rotermund 1 , Sunil Mo 1 , Jaejin Lee 1
1 , Ajou University, Suwon Korea (the Republic of)

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9:00 PM - A9.24
Detailed Investigation of GaN Metal-insulator-Semiconductor Structures by Capacitance-voltage and Deep Level Transient Spectroscopy Methods.

Junjiroh Kikawa 1 , Yuki Horiuchi 1 , Eiji Shibata 1 , Masamitsu Kaneko 1 , Hirotaka Otake 2 , Tatsuya Fujishima 2 , Kentaro Chikamatsu 2 , Atsushi Yamaguchi 2 , Yasushi Nanishi 1
1 , Ritsumeikan Univ., Kusatsu, Shiga, Japan, 2 , ROHM CO.,LTD, Kyoto, Kyoto, Japan

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9:00 PM - A9.25
Cleaning of GaN(0001): Surface Chemistry and Morphology.

Thomas Schmidt 1 , Christian Schulz 1 , David Krueger 1 , Jan Flege 1 , Nina Berner 1 , Christian Tessarek 1 , Detlef Hommel 1 , Jens Falta 1
1 Institute of Solid State Physics, University of Bremen, Bremen Germany

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9:00 PM - A9.26
Characterization of Electronic Defects in Hafnium Oxide Thin Films via Atomic Force Microscopy.

Matthew Brukman 1 , Maxim Nikiforov 2 , Dawn Bonnell 1
1 Materials Science, University of Pennsylvania, Philadelphia, Pennsylvania, United States, 2 , Oak Ridge National Lab, Oak Ridge, Tennessee, United States

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9:00 PM - A9.27
Transparent Indium Oxide Thin-Film Transistor Fabricated by RF Magnetron Sputtering at Room Temperature.

Joo Hyon Noh 1 , Hong Koo Baik 2 , Dong-Joo Kim 1
1 Material Engineering, Auburn University, Auburn, Alabama, United States, 2 Material Science and Engineering, Yonsei University, Seoul Korea (the Republic of)

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9:00 PM - A9.28
Characterizations of Boron Carbon Nitride and Boron Carbide Films Synthesized by PECVD.

Qingguo Wu 1 , Mandyam Sriram 1 , Jim Sims 1 , Haiying Fu 1 , Sesha Varadarajan 1 , Tim Archer 1 , Nathan Trujillo 2 , Karen Gleason 2
1 PECVD Unit, Novellus Systems, Inc., Tualatin, Oregon, United States, 2 Department of Chemical Engineering, Massachusetts Institute of Technology, Boston, Massachusetts, United States

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9:00 PM - A9.29
Determination of the InGaN Composition from Strain Measurements.

Francisco Morales 1 , J. Lozano 1 , R. Garcia 1 , V. Lebedev 2 3 , S. Hauguth-Frank 2 , V. Cimalla 2 3 , O. Ambacher 2 3 , D. Gonzalez 1
1 Materials Science and Engineering, University of Cádiz, Puerto Real, Cádiz, Spain, 2 Institute of Micro- and Nanotechnologies, Technical University Ilmenau, Ilmenau Germany, 3 Fraunhofer Institute for Applied Solid State Physics, Fraunhofer Institute Freiburg, Freiburg Germany

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9:00 PM - A9.3
Optimizing MIM Device Electrical Properties: Impact of Bottom Electrodes and High K Materials.

Marceline Bonvalot 1 , Christophe Vallee 1 , Patrice Gonon 1 , Hichem Abed 1 , Corentin Jorel 1 , Olivier Joubert 1
1 LTM, CNRS, Grenoble France

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9:00 PM - A9.30
Low Resistance Ohmic Contact Formation and Mechanism of Current Transport Through p-GaN and p-AlGaN.

Indra Chary 1 , Boris Borisov 1 , Anilkumar Chandolu 1 , Vladimir Kuryatkov 1 , Sergey Nikishin 1 , Mark Holtz 1
1 Nano Tech Center, Texas Tech University, Lubbock, Texas, United States

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9:00 PM - A9.31
Microstructural Analysis of Conducting Path in TiO2 Film.

Deok-Hwang Kwon 1 , Kyung Min Kim 1 , Miyoung Kim 1
1 School of Material Science and Engineering, Seoul National University, Seoul Korea (the Republic of)

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9:00 PM - A9.32
Nucleation and Stochiometry Dependence of Rutile-TiO2 Thin Films Grown by Plasma-assisted Molecular Beam Epitaxy.

Costel Constantin 1 , Kai Sun 2 , Randall Fenstra 3
1 Physics, Seton Hall University, South Orange, New Jersey, United States, 2 Electron Microbeam Analysis Laboratory(North Campus), University of Michigan, Ann Arbor, Michigan, United States, 3 Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania, United States

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9:00 PM - A9.33
Performance Characteristics of Inorganic Materials under Plasma Process Environments and Analysis of Etching Mechanisms.

Brock Alexander 1 , John Foggiato 1 , Ramas Raman 2 , Rick Cooke 2 , Nilesh Gunda 2 , Timothy Edwards 1
1 , Greene, Tweed & Co., Kulpsville, Pennsylvania, United States, 2 Entegris Specialty Coatings, Entegris, Inc, Burlington, Massachusetts, United States

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9:00 PM - A9.34
The Effect of BCl3 Pretreatment on Cl2/Ar Plasma Etching of Epitaxial AlN.

Xiaoyan Xu 1
1 Electrical Engineering, Texas Tech University, Lubbock, Texas, United States

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9:00 PM - A9.35
High Quality ZnO Thin Films for High Frequency Surface Acoustic Wave Generation on III-V Semiconductors.

Qijie Wang 1 , Christian Pflugl 1 , William F. Andress 1 , Donhee Ham 1 , Federico Capasso 1 , Masamichi Yamanishi 2
1 , Harvard University, Cambridge, Massachusetts, United States, 2 , Hamamatsu Photonics K.K., Shizuoka Japan

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9:00 PM - A9.4
Change in Tunneling Spectrum of a Co/AlOx/Co Junction under Constant Voltage Stress.

Kouhei Horikiri 1 , Kazuo Shiiki 1
1 Department of Applied Physics and Physico-Informatics, Keio university, Yokohama Japan

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9:00 PM - A9.5
Characteristics of Inter Poly Dielectric (IPD) Prepared by Plasma Oxidation Treatment of LP-CVD SiO2 Film.

Jung-hwan Kim 1 , Yong-Seok Kim 1 , Byong-Hyun Jang 1 , Hyun Namkoong 1 , Seung-Ju Park 1 , Woo-Sung Lee 1 , Hun-Hyoung Lim 1 , Han-Jin Lim 1 , Seok-Woo Nam 1 , Chang-Jin Kang 1 , Tae-Hyuk Ahn 1
1 Semiconductor Business, Samsung Electronics Co., Hwasung, Gyeonggi, Korea (the Republic of)

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9:00 PM - A9.6
Optical Characteristics of Transition Metal Doped ZnO BulkSingle Crystals.

Yongmin Kim 1 , Yong Ho Shin 1 , Young Hwan Park 1 , Hee Soo Kim 1 , Seung Jung Noh 1 , Ki Seok Ahn 2
1 Applied physics, Dankook University, Yongin Korea (the Republic of), 2 Thin Film Materials Laboratory, Korea Research Institute of Chemical Technology, Daejeon Korea (the Republic of)

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9:00 PM - A9.7
Influence of Titanium Nitride Cap Layer Thickness on the Oxygen Sensitivity of Cobalt Films During Silicide Processing.

Nathan Hoffman 1 , Roger Ketcheson 1 , Daniel Stambaugh 1 , Laura Safran 1 , Thomas Fryxell 1 , Richard Campos 1 , Jerry Mase 1 , Daniel Codi 1
1 , NXP Semiconductors, Hopewell Junction, New York, United States

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9:00 PM - A9.8
Investigation of Amorphous InGaZnO Based TFT Interface Properties with Synchrotron Radiation Analysis.

Minho Joo 1 , Jongkwon Choi 1 , Kyuho Park 1 , Kyuwook Ihm 2 , Ki-Jeong Kim 2 , Tai-Hee Kang 2
1 Devices & Materials Laboratory, LG Electronics Advanced Research Institute, Seoul Korea (the Republic of), 2 Pohang Accelerator Laboratory, POSTECH, Pohang Korea (the Republic of)

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9:00 PM - A9.9
On the use of Shubnikov-de Haas Effect for the Determination of the Effective Mass in GaN.

S. Elhamri 1 , E. Timko 1 , R. Berney 1 , M. Ahoujja 1 , W. Mitchel 2
1 Physics, University of Dayton, Dayton, Ohio, United States, 2 Materials and Manufacturing Directorate, AFRL, Wright-Patterson AFB, Ohio, United States

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2008-12-03   Show All Abstracts

Symposium Organizers

Michael Mastro U.S. Naval Research Laboratory
Jeffrey LaRoche Raytheon RF Components
Fan Ren University of Florida
Jen-Inn Chyi National Central University
Jihyun Kim Korea University
A10: Dielectrics
Session Chairs
Francisco Morales
Francois Pagette
Wednesday AM, December 03, 2008
Room 202 (Hynes)

9:15 AM - A10.1
Performance of Catalyst-based Solid-state Sensors for Wide Temperature Range Hydrogen Leak Detection.

Claudiu Muntele 1 , Sandra Sadate 1 , Malek Abunaemeh 1 , Cydale Smith 1 , Daniel McElhaney 1 , Jonathan Gardner 2 , Abdalla Elsamadicy 2 , Daryush Ila 1
1 , Alabama A&M University, Normal, Alabama, United States, 2 , University of Alabama in Huntsville, Huntsville, Alabama, United States

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9:30 AM - **A10.2
Plasma Nitridation of the SiO2/4H-SiC Interface and (000-1) MOSFET Characteristics.

John Williams 1 , X. Zhu 1 , Z. Chen 1 , A. Ahyi 1 , T. Isaacs-Smith 1 , J. Rozen 2 , S. Dhar 3 , L. Feldman 4
1 , Auburn University, Auburn University, Alabama, United States, 2 , Vanderbilt University, Nashville, Tennessee, United States, 3 , Cree, Inc., Durham, North Carolina, United States, 4 , Rutgers University, Piscataway, New Jersey, United States

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10:00 AM - A10.3
Optimization of Samarium Oxide Deposition on Gallium Arsenide.

Anthony Stewart 1 , Brent Gila 1 , Andy Gerger 1 , Cammy Abernathy 1 , Stephen Pearton 1
1 Materials Science & Engineering, University of Florida, Gainesville, Florida, United States

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10:15 AM - A10.4
High Dielectric Constant Epitaxial Oxide Integration for GaN-based MOS Devices.

Jesse Jur 1 , V. Wheeler 1 , D. Lichtenwalner 1 , M. Veety 2 , D. Barlage 2 , Mark Johnson 1
1 Materials Science and Eng., NC State University, Raleigh, North Carolina, United States, 2 Electrical and Computer Eng,, NC State University, Raleigh, North Carolina, United States

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10:30 AM - A10.5
Interface Study in a "High-k / Metal" Gate Stack : Titanium Nitride on Hafnium Oxide.

Clement Gaumer 1 , Eugenie Martinez 2 , Sandrine Lhostis 1 , Dominique Lafond 2 , Frederic Fillot 2 , Virginie Loup 2 , Francois Pierre 2 , Jean-Paul Barnes 2 , Mickael Gros-Jean 1 , Pierre Perreau 2
1 , STMicroelectronics, Crolles France, 2 , CEA-LETI, MINATEC, Grenoble France

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10:30 AM - A10: Dielectrics
A10.5 Abstract Withdrawn

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10:45 AM - A10.6
Post-Stress/BD Leakage Mechanism in Ultrathin High-κ (HfO2)x(SiO2)1-x/SiO2 Gate Stacks: Nano-Atomic Force Microscopy C-AFM.

Hasan Uppal 1 , Vladimir Markevich 1 , Athanasios Dimoulas 2 , Stelios Volkos 2 , Bruce Hamilton 1 , Anthony Peaker 1
1 Electrical and Electronics Engineering, Microelectronics and Nanostructures (M&N) Research Group, University of Manchester, Manchester, Greater Manchester, United Kingdom, 2 MBE Laboratory, Institute of Materials Science, NCSR DEMOKRITOS, Athens Greece

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11:00 AM - A10: Dielectrics
BREAK

A11: Advanced Devices
Session Chairs
Reinhart Job
John Williams
Wednesday PM, December 03, 2008
Room 202 (Hynes)

11:15 AM - A11.1
Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during Program/Erase Operations.

Donghua Li 1 , Seongjae Cho 1 , Il Han Park 1 , Jang-Gn Yun 1 , Jung Hoon Lee 1 , Doo-Hyun Kim 1 , Gil Sung Lee 1 , Yoon Kim 1 , Se-Hwan Park 1 , Won Bo Sim 1 , Jong Duk Lee 1 , Byung-Gook Park 1
1 Electrical Engineering and Computer Science, Seoul National University, Seoul Korea (the Republic of)

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11:30 AM - A11.2
Contact Resistivity of NiPtSi on n-doped Silicon Activated by Laser Annealing.

Francois Pagette 1 , Paul Solomon 1 , Paul Kozlowski 1 , Anna Topol 1 , Wilfried Haensch 1
1 T. J. Watson Research Center, IBM, Yorktown Heigths, New York, United States

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11:45 AM - A11.3
Improved Trade-off Between Capacitance Density and Voltage Response in MIM Capacitor using SrTiO3-Medium K Bilayers.

Corentin Jorel 1 , Christophe Vallee 1 , Maurice Kahn 1 , Patrice Gonon 1 , Marceline Bonvalot 1 , Bernard Pelissier 1
1 , LTM (CNRS), Grenoble cedex 9 France

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12:00 PM - A11.4
3-D Finite Element Simulation of a Phase-change Random Access Memory Cell with a Novel Self-insulated Structure.

Ke Sun 1 , Wen Feng 1 , Ya-Hong Xie 1
1 Materials Science & Engineering, University of California, Los Angeles, Los Angeles, California, United States

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12:30 PM - A11.6
Electronic Structure Study about the Role of Different Capping Metals (Hf, Ti, Zr) in Electrical Property of HfO2 Dielectric.

Jae Hyuck Jang 1 , Tae Joo Park 1 2 , Jeong Hwan Kim 1 2 , Kwang Duk Na 1 2 , Cheol Seong Hwang 1 2 , Miyoung Kim 1
1 Department of Material Science and Engineering, Seoul National University, Seoul Korea (the Republic of), 2 Inter-university Semiconductor Research Center, Seoul National University, Seoul Korea (the Republic of)

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12:45 PM - A11.7
Cathodoluminescence Study of Orientation Patterned (OP)–GaAs Crystals for Non-Linear Optical Conversion by Quasi- Phase Matching (QPM).

Hector Angulo 1 , Manuel Avella 1 , Oscar Martinez 1 , Juan Jimenez 1 , Candace Lynch 2 , Bavid Bliss 2
1 Fisica Materia Condensada, Universidad de Valladolid, Valladolid Spain, 2 Sensors Directorate, Air Force Research Laboratory, Hanscom, Massachusetts, United States

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A12: Advanced Materials
Session Chairs
Jesse Jur
Francois Pagette
Wednesday PM, December 03, 2008
Room 202 (Hynes)

2:30 PM - A12.1
Strained P-channel for InGaAs CMOS.

Padmaja Nagaiah 1 , V. Tokranov 1 , M. Yakimov 1 , S. Oktyabrsky 1
1 College of Nanoscale Science and Engineering, University at Albany, SUNY, Albany, New York, United States

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2:45 PM - A12.2
Frequency Dependent Kelvin Probe Force Microscopy on Dopant Structures.

Anne-D. Mueller 1 , Heidemarie Schmidt 2 , Falk Mueller 1
1 , Anfatec Instruments AG, Oelsnitz Germany, 2 , FZ Rossendorf, Dresden Germany

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3:00 PM - A12.3
Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation.

Reinhart Job 1 , Franz-Josef Niedernostheide 2 , Hans-Joachim Schulze 2 , Holger Schulze 3
1 Mathematics and Computer Science, University of Hagen, Hagen Germany, 2 , Infineon Technologies AG, Munich Germany, 3 , Infineon Technologies Austria AG, Villach Austria

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3:15 PM - A12.4
Observation of Microstructure of Grain Boundaries of ZnO Varistors using Backscattered-electron.

Masayuki Takada 1 , Yuuki Sato 1 , Shinzo Yoshikado 1
1 , Doshisha university, Kyotanabe Japan

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3:30 PM - A12.5
Characterization of High Quality InP on GaAs Grown by Hydrogen-assisted Molecular Beam Epitaxy by TEM and PL.

Francisco Morales 1 , A. Aouni 2 1 , R. Garcia 1 , P. Postigo 3 , C. Fonstad 4 , S. Molina 1
1 Materials Science and Engineering, University of Cádiz, Puerto Real, Cádiz, Spain, 2 Faculté de’Sciences et Techniques, Université Abdelmalek Essadi, Tanger Morocco, 3 Instituto de Microelectrónica de Madrid, Centro Nacional de Microelectrónica, CSIC, Madrid Spain, 4 Department of Electrical Engineering and Computer Science, and Microsystems Technology Laboratory, MIT, Cambridge, Massachusetts, United States

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3:45 PM - A12.6
Spectroscopic Investigations of Oxide/GaN Interfaces for Integration in Multifunctional Structures.

Spalding Craft 1 , Jon Ihlefeld 2 , Darrell Schlom 2 , Jon-Paul Maria 1
1 Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, United States, 2 Materials Science and Engineering, Pennsylvania State University, State College, Pennsylvania, United States

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4:00 PM - A12
BREAK

A13: Thin Film Transistors
Session Chairs
Reinhart Job
Francisco Morales
Wednesday PM, December 03, 2008
Room 202 (Hynes)

4:15 PM - A13.1
The Electrical Stability of Room Temperature Deposited Amorphous Indium-gallium-zinc-oxide Thin Film Transistors.

Wantae Lim 1 , Yu-lin Wang 1 , Jewon Lee 1 , David Norton 1 , Stephen Pearton 1 , Fan Ren 2
1 Materials Science and Engineering, University of Florida, Gainesville, Florida, United States, 2 Chemical Engineering, University of Florida, Gainesville, Florida, United States

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4:30 PM - A13.2
Low Temperature a-Si:H TFT on Soda Lime Glass.

Sangwoo Whangbo 1 , Bong-Kyu Shin 1 , Kapsoo Yoon 1 , Min Kang 1 , Jinho Ju 1 , Shiyul Kim 1 , JunHyung Souk 1
1 LCD Technical Center, AMLCD Division, Samsung Electronics. Co., Yongin-City, Kyungki-Do Korea (the Republic of)

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4:45 PM - A13.3
Influence of In-Situ Arsenic Doped Emitter Poly Process Conditions on RF-BiCMOS Device Parametrics.

Richard Egloff 1 , Namwoong Paik 1 , Susan Beckett 1 , Jerry Mase 1 , Dan Codi 1
1 , NXP Semiconductors, Hopewell Junction, New York, United States

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5:00 PM - A13.4
A Comprehensive Study of Stability in Bottom Gate a-IGZO Thin Film Transistor Grown by RF and DC Sputtering.

Sung Soo Park 1 , Kwang-Il Choi 1 , Dong-Ho Nam 1 , Won-Ho Choi 1 , Jaekyeong Jeong 2 , Gawon Lee 1
1 Dept. of Electronic Engineering, Chungnam National University, Daejeon Korea (the Republic of), 2 Corporate R and D Center, Samsung SDI, Yongin-Si, Gyeonggi-Do, Korea (the Republic of)

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5:15 PM - A13.5
Charge Trapping in Low Power Back-Side ONO Non-Volatile Memory Devices.

Kung Ming Fan 1 2 , Helena Silva 2 , Chao Sung Lai 1 , Sandip Tiwari 3
1 Electronic Engineering, Chang Gung University, Tao-yuan Taiwan, 2 Electrical & Computer Engineering, University of Connecticut, Storrs, Connecticut, United States, 3 School of Applied and Engineering Physics, Cornell University, Ithaca, New York, United States

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