2024 MRS Fall Meeting & Exhibit
PM03.01.08

Plasma Etch in the Nanosheet FET Era and Beyond

When and Where

Dec 3, 2024
11:00am - 11:30am
Sheraton, Third Floor, Berkeley

Presenter(s)

Co-Author(s)

Sonam Sherpa1

Georgia Institute of Technology1

Abstract

Sonam Sherpa1

Georgia Institute of Technology1
Plasma etch is a critical technology for the fabrication of integrated circuits. As the transistor architecture has evolved from planar FET to finFET to nanosheet FET to complimentary FET, plasma etch has also continually evolved to meet the ever-tightening process specifications. In this talk, we will review the seminal innovations in plasma etch that will enable these technology inflections. The focus of this talk will be on pulsed plasma, atomic layer etch, and cryogenic etch that offer a pathway to escape the fundamental limits of thermodynamics and mass transfer during the plasma etch.

Keywords

acoustic emission | activation analysis | calorimetry

Symposium Organizers

Rebecca Anthony, Michigan State University
I-Chun Cheng, National Taiwan University
Lorenzo Mangolini, University of California, Riverside
Davide Mariotti, University of Strathclyde

Session Chairs

Rebecca Anthony
Lorenzo Mangolini

In this Session