Symposium QT03-Topological Materials—Growth, Theoretical Models and Applications

Topological materials are a new class of materials that can, thanks to their extraordinary properties, project us in the Beyond CMOS world. The symposium will cover the growth, the theoretical models on physics and the applications for topological materials. The first part will focus on the growth of this new kind of exotic materials. The growth of a new generation of topological materials, which is one of the fundamental aspects to trigger the discovery of new phenomema, will be presented and will have an important place. We will highlight the issues concerning the capacity to obtain materials that do not react with ambient environment using opportune protection without changing the materials properties and their functionalization for band gap engineering. The second part of the symposium will deal with the theoretical models explaining the topological behavior. A part will be devoted to the way and the conditions for the Quantum Spin Hall effect (QSH) to take place in 2D and 3D Topological insulators and also to new topological features in Weyl semimetal. Theoretical models that will link the QSH with other properties, such as ZT (figure of merit) for Thermoelectrics (TE) materials will be also be highlighted. The way to decouple phonon and charge in these materials exploiting functionalization or adding defects will be pointed out in this session. In the third part of the symposium, first applications of these materials will be presented. Computational materials contributions thta deal with the prediction of new topological materials will also been considered. Topological materials can be a game changer in different fields such as TE with large ZT (i.e. avionics, space, energy consumption reduction in new intelligent buildings), new forms of quantum computing/memories at subatomic level and beyond CMOS electronics exploiting spin transport with very low energy consumption. From the point of view of low TRL physics, we can also consider the potential for Majorana Fermion detection that can be implemented with 3D topological insulators. Abstract discussing potential applications but also exploratory research in these fields will be strongly solicited.

Topics will include:

Growth of topological materials, Chemical synthesis approach for topological materials, Ambient stability of topological materials
Surface functionalization, Theoretical modelling of topological materials, Quantum transport
Thermoelectric properties and devices, Sub-atomic quantum computing based on materials
Beyond CMOS electronics based on topological materials, Topological effects and strain
Topological insulators, Weyl semimetals, Computational materials predictive model

Invited Speakers:

Gabriel Aeppli (ETH Zürich, Switzerland)
Pantelis Bampoulis (University of Twente, Netherlands)
Claudia Felser (Max Planck Institute for Chemical Physics of Solids, Germany)
Lydie Ferrier (INSA Lyon, France)
Benedetta Flebus (Boston University, USA)
Duncan Haldane (Princeton University, USA)
Zahid Hasan (Princeton University, USA)
Thomas Heine (Technische Universität Dresden, Germany)
Mathieu Jamet (Commissariat à l’énergie atomique et aux énergies alternatives, France)
Charles Kane (University of Pennsylvania, USA)
Alessandra Lanzara (Lawrence Berkeley National Laboratory, USA)
Gil-Ho Lee (Pohang University of Science and Technology, Republic of Korea)
Frederic Leroy (Aix-Marseille Université, France)
Mingda Li (Massachusetts Institute of Technology, USA)
Eugene J Mele (University of Pennsylvania, USA)
Laurens W. Molenkamp (Julius-Maximilians-Universität Würzburg, Germany)
Jagadeesh Moodera (Massachusetts Institute of Technology, USA)
Lukas Muechler (The Pennsylvania State University, USA)
Camelia Prodan (New Jersey Institute of Technology, USA)
Raquel Queiroz (Columbia University, USA)
niels schroeter (Max Planck Institute, Germany)
Susanne Stemmer (University of California, Santa Barbara, USA)
Alberto Verdini (Consiglio Nazionale delle Ricerche, Italy)
Maia G. Vergniory (Donostia International Physics Center, Spain)
Hanno Weitering (The University of Tennessee, Knoxville, USA)
Justin Wells (University of Oslo, Norway)
Bohm Jung Yang (Seoul National University, Republic of Korea)
Junji Yuhara (Nagoya University, Japan)