November 27 - December 2, 2016
Boston, Massachusetts
2016 MRS Fall Meeting

Symposium NM2-2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices

The discovery of graphene was a paradigm shift in our understanding of low-dimensional materials and, for the first time, proved that a two-dimensional (2D) material is possible. Even though graphene is considered transformational, it is only the “tip of the iceberg.” There are now a wide variety of 2D and layered materials that provide a rich environment for exploration, leading to novel properties and phenomenon. Additionally, synthesizing and heterogeneously combining atomically thin organic and inorganic layers to form vertical and lateral heterostructures are the next step in advancing the field of 2D materials. Heterogeneous integration of conducting, semiconducting, insulating, and polymer 2D materials has been predicted to lead to completely novel optoelectronic properties, resulting in novel and widely tunable electronic and opto-electronic properties entirely different from the constituent layers. These exciting predictions are beginning to be experimentally proven and therefore it is the right time to host a session focused on 2D materials that represents the broad base of non-graphene research.

Topics will include:

  • 2D Nitrides, Oxides, Chalcogenides, and Polymers
  • Elemental 2D Materials Beyond Graphene (e.g. Silicene)
  • Modeling of heterostructures built from 2D-layered materials
  • Synthesis & Properties of 2D Materials and Heterostructures
  • Synthesis, Properties, and Theory of 2D Polymers
  • Doping and Alloying of 2D Materials and Heterostructures
  • Devices based on 2D Materials and Heterostructures
  • Synthesis & Properties of hybrid organic-inorganic 2D Heterostructures

Invited Speakers:

  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _0 (Italian Institute of Technology, Italy)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _1 (National University of Singapore, Singapore)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _2 (Institute of Atomic and Molecular Sciences, Taiwan)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _3 (Hunan University, China)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _4 (Lancaster University, United Kingdom)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _5 (Naval Research Laboratory, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _6 (Massachusetts Institute of Technology, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _7 (Université d'Aix-Marseille, France)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _8 (University of Siegen, Germany)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _9 (Nanyang Technological University, Singapore)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _10 (Rice University, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _11 (National University of Singapore, Singapore)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _12 (University of Sheffield, United Kingdom)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _13 (National Institute of Advanced Industrial Science and Technology, Japan)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _14 (Penn State University, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _15 (University of Texas at Dallas, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _16 (University of California, Berkeley, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _17 (University of Southern California, USA)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _18 (Nanjing University, China)
  • NM2_2D Layers and Heterostructures beyond Graphene—Theory, Preparation, Properties and Devices _19 (Oxford University, United Kingdom)

Symposium Organizers

Joshua A. Robinson
The Pennsylvania State University
Materials Science and Engineering
USA

Xiangfeng Duan
University of California, Los Angeles
USA

Lain-Jong Li
King Abdullah University of Science and Technology
Saudi Arabia

Andrew T.S. Wee
National University of Singapore
Singapore

Topics

nanoscale optoelectronic photovoltaic piezoelectric semiconducting spintronic thin film