2016 MRS Fall Meeting
Symposium EM6-Thin-Film Transistors—New Materials and Device Concepts
Flexible Electronics have a large future market with promising applications in flexible displays and lighting, wearable sensors, intelligent labels, and packaging. The key component of these future electronics is the thin film transistor (TFT). For many of these novel applications, the performance of the TFTs has to be significantly enhanced beyond what is possible today, e.g. beyond amorphous silicon (a:Si) thin film transistors which is the most widely used technology so far.
This symposium will be a forum for discussion of new TFT materials, deposition technologies, and device architectures that will meet the challenges posed by new applications. Thin film semiconductor materials of interest include (but are not limited to): oxide, organic and nanostructured semiconductors, and 2D materials. New device architectures will include vertical TFTs and self-aligned TFTs, as well as more conventional formats. Abstracts describing new vapor- or solution-based low temperature processing routes to TFTs will also be welcome.
Topics will include:
- TFT architectures
- TFT materials - semiconductors and dielectrics
- TFT performance, including stability
- Novel TFT fabrication or processing approaches
- TFTs on flexible foils
- Thin film oxides
- Thin film organics
- Films of 1D or 2D materials
- Thin film dielectrics
- Light-emitting TFTs
- TFTs for sensor applications
Invited Speakers:
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_0 (University of California, Berkeley, USA)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_1 (University of California, Santa Barbara, USA)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_2 (Holst Centre, Netherlands)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_3 (IMEC, Belgium)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_4 (Penn State University, USA)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_5 (Max Planck Institute Stuttgart, Germany)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_6 (Novaled, Germany)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_7 (Kodak, USA)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_8 (University of Florida, USA)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_9 (Osaka University, Japan)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_10 (Cambridge University, United Kingdom)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_11 (Waseda University, Japan)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_12 (University of Tokyo, Japan)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_13 (ETH Zurich, Switzerland)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_14 (Princeton University, USA)
- EM6_Thin-Film Transistors—New Materials and Device Concepts
_15 (University of Heidelberg, Germany)
Symposium Organizers
C. Daniel Frisbie
University of Minnesota
Department of Chemical Engineering and Materials Science
USA
Moon Sung Kang
Soongsil University
Department of Chemical Engineering
Republic of Korea
Karl Leo
Technical University of Dresden
Institute for Applied Photophysics
Germany
Takao Someya
University of Tokyo
Department of Electrical Engineering
Japan
Topics
devices
dielectric
dielectric properties
electrical properties
electronic material
film
insulator
microelectronics
semiconducting