November 27 - December 2, 2016
Boston, Massachusetts
2016 MRS Fall Meeting

Symposium EM6-Thin-Film Transistors—New Materials and Device Concepts

Flexible Electronics have a large future market with promising applications in flexible displays and lighting, wearable sensors, intelligent labels, and packaging. The key component of these future electronics is the thin film transistor (TFT). For many of these novel applications, the performance of the TFTs has to be significantly enhanced beyond what is possible today, e.g. beyond amorphous silicon (a:Si) thin film transistors which is the most widely used technology so far.

This symposium will be a forum for discussion of new TFT materials, deposition technologies, and device architectures that will meet the challenges posed by new applications. Thin film semiconductor materials of interest include (but are not limited to): oxide, organic and nanostructured semiconductors, and 2D materials. New device architectures will include vertical TFTs and self-aligned TFTs, as well as more conventional formats. Abstracts describing new vapor- or solution-based low temperature processing routes to TFTs will also be welcome.

Topics will include:

  • TFT architectures
  • TFT materials - semiconductors and dielectrics
  • TFT performance, including stability
  • Novel TFT fabrication or processing approaches
  • TFTs on flexible foils
  • Thin film oxides
  • Thin film organics
  • Films of 1D or 2D materials
  • Thin film dielectrics
  • Light-emitting TFTs
  • TFTs for sensor applications

Invited Speakers:

  • EM6_Thin-Film Transistors—New Materials and Device Concepts _0 (University of California, Berkeley, USA)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _1 (University of California, Santa Barbara, USA)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _2 (Holst Centre, Netherlands)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _3 (IMEC, Belgium)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _4 (Penn State University, USA)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _5 (Max Planck Institute Stuttgart, Germany)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _6 (Novaled, Germany)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _7 (Kodak, USA)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _8 (University of Florida, USA)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _9 (Osaka University, Japan)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _10 (Cambridge University, United Kingdom)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _11 (Waseda University, Japan)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _12 (University of Tokyo, Japan)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _13 (ETH Zurich, Switzerland)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _14 (Princeton University, USA)
  • EM6_Thin-Film Transistors—New Materials and Device Concepts _15 (University of Heidelberg, Germany)

Symposium Organizers

C. Daniel Frisbie
University of Minnesota
Department of Chemical Engineering and Materials Science
USA

Moon Sung Kang
Soongsil University
Department of Chemical Engineering
Republic of Korea

Karl Leo
Technical University of Dresden
Institute for Applied Photophysics
Germany

Takao Someya
University of Tokyo
Department of Electrical Engineering
Japan

Topics

devices dielectric dielectric properties electrical properties electronic material film insulator microelectronics semiconducting