Symposium EM11-Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting

Over the last few years, research in the field of wide-bandgap semiconductors has shown impressive advancements, mainly due to the high importance of these materials for energy efficiency. Based on SiC and GaN, it is now possible to fabricate diodes and transistors with blocking voltages in the kV range with low on-resistance; such devices are expected to be rapidly adopted in the next generation of power conversion systems. This will permit reduction in power conversion losses, which will in turn have a positive economic and environmental impact, since conversion losses currently account for 10% of the global electricity consumption. However, before these technologies can significantly penetrate the market, further innovations in material and device architecture are needed. For example, (1) Several strategies are being explored for the fabrication of normally-off GaN-based transistors, but the stability and the reliability of the various solutions are still under debate; (2) The lack of native GaN substrates of large area and low cost limits the development of vertical transistors based on III-N materials; and (3) SiC transistors still suffer from threshold voltage instability and gate oxide reliability issues. Further, wide-bandgap semiconductors have also led to a revolution in the optoelectronics field: While GaN-based power LEDs are changing the world of lighting, new device architectures (nanowire devices, deep-ultraviolet LEDs, and laser diodes) are being studied and optimized. However, material-related aspects may significantly limit the efficiency of these devices, by inducing defect-related recombination, by limiting the extraction efficiency, and by reducing device reliability. This symposium will cover a broad range of material-related topics important to the development of wide-bandgap semiconductor power and optoelectronic devices; these issues are of high interest for the scientific community, since they limit the development of energy-efficient devices and deployment of the systems that depend on these devices.

Topics will include:

Bulk crystals and substrates
Ultra-wide-bandgap materials beyond SiC and GaN
Epitaxial growth
Point, line,and planar defects
Low-dimensional structures for new device functionality
Doping of WBG materials
Novel polarization effects and utilization in devices
Materials impact on device reliabiilty
Carrier recombination dynamics
In-rich InGaN synthesis and chemistry for light emitters
Gate and passivation dielectrics for WBG materials
Advanced materials characterization techniques

Invited Speakers:

EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _0 (Boston University, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _1 (University of California, Davis, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _2 (HRL Laboratories, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _3 (North Carolina State University, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _4 (Massachusetts Institute of Technology, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _5 (Osram OptoSemiconductors, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _6 (Army Research Laboratory, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _7 (Kyoto University, Japan)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _8 (ARPA-E, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _9 (TU Berlin, Germany)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _10 (University of Lille, France)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _11 (University of Padova, Italy)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _12 (HexaTech, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _13 (Office of Naval Research, USA)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _14 (Technical University of Chemnitz, Germany)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _15 (Kyoto Institute of Technology, Japan)
EM11_Wide-Bandgap Materials for Energy Efficiency—Power Electronics and Solid-State Lighting _16 (University of Bristol, United Kingdom)