Symposium EM10-Emerging Materials and Technologies for Nonvolatile Memories

This symposium will cover the scientific and technological exploration and advances of materials for emerging nonvolatile memories devices. A wide range of topics will be covered from fundamental material properties and integration issues, to technology demonstration and industrial devices. Contributions are expected to explore the use of emerging either inorganic or organic materials to realize nonvolatile devices applying advanced and novel technologies. To this end, focus areas include semiconducting and metallic nanocrystal memories, silicon-oxide-nitride-oxide-silicon (SONOS) and related charge-trapping memories, magnetic random access memories (MRAM) and spin-torque transfer random access memories (STT-RAM), ferroelectric random access memories (FeRAM), chalcogenide materials, resistive random access memory (ReRAM) concepts, materials and devices, nanoelectromechanical systems; as well as polymer materials and more recent advances in molecular memories. The importance of this technological field is now increasing since incumbent semiconductor non-volatile devices such as Flash memory are now facing serious future scaling problems. Recently, significant research effort has been focused worldwide on the realization of a unified memory with the characteristics of very fast randomaccess-memories and long data retention times. Nonvolatile memories are the last three years the most valuable product of the semiconductor industry. Moreover, the blossoming of flexible electronics has put great demands on memory devices. These trends have been confirmed by the increasing number of submitted abstracts in the field compared to the previous symposiums.

Topics will include:

New materials and architectures for charge-trapping memories
Advances in 3D and multibit storage devices
CMOS compatible memory cells integrating new materials
Advances in magnetoresistive memory device
Advances in materials and technology of Resistive memories
Cation-based memory materials and devices
Advances in multiferroic materials and devices
Advances in ferroelectric materials and memory devices
Fuse-Antifuse type systems
Transparent memories
Advances in nanoelectromechanical memory device concepts
Advances in Graphene and carbon-nanotube memories
Advances in unified memory concepts
Reliability issues for non-volatile memories
Advances in techniques for the formation of semiconducting or metallic nanocrystals in an insulator matrix
Materials and technology for electrically controlled resistive switching
Materials and technology for electrically controlled resistive switching
Advances in polymer materials and molecular systems for memory devices
Advances in materials and technology of phase change memory devices

Invited Speakers:

EM10_Emerging Materials and Technologies for Nonvolatile Memories _0 (Spintec Ltd., France)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _1 (Arizona State University, USA)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _2 (Macronix International Co., Ltd., Taiwan)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _3 (Ecole Nationale Supérieure des Mines, France)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _4 (Micron Inc., USA)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _5 (Cypress Semi Corp., USA)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _6 (Tower Semiconductor, Israel)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _7 (University of California, Santa Barbara, USA)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _8 (International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Japan)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _9 (Peter Grünberg Institute, Forschungszentrum Jülich GmbH, Germany)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _10 (University of Massachusetts Amherst, USA)
EM10_Emerging Materials and Technologies for Nonvolatile Memories _11 (Semiconductor Research Corporation, USA)