Symposium KK-Materials and Technology for Non-Volatile Memories

This symposium will cover the scientific and technological exploration of materials, devices and technologies for emerging non-volatile memories. A wide range of topics will be covered from fundamental material properties, nonvolatile memory devices, and integration issues, to demonstration and commercially available devices. Contributions are expected to explore the use of either inorganic or organic materials as well as inorganic/organic hybrid materials to realize deep nanoscale memory nodes. The focused areas include; semiconducting and metallic nanocrystal memories, SONOS, MRAM, FeRAM, ReRAM, chalcogenide materials, nanoelectromechanical systems, as well as polymer materials and molecular memories. The importance of this technological field is increasing since incumbent semiconductor non-volatile devices such as Flash memory are now facing serious future scaling problems. Recently, significant research effort has been focused worldwide on the realization of a nonvolatile memory with the characteristics of very fast random-access-memories and long data retention times. Nonvolatile memories are one of the most valuable products of the semiconductor industry. Moreover, application of nonvolatile memory devices to flexible electronics is an interesting approach. These trends have been confirmed by the increasing number of submitted abstracts in the field compared to the previous symposiums.

Topics will include:

New materials and architectures for charge-trapping memories
Fuse-Antifuse type systems
Advances in nanoelectromechanical memory device concepts
Advances in Graphene and carbon-nanotube memories
Advances in unified memory concepts
Reliability issues for non-volatile memories
Advances in techniques for the formation of semiconducting or metallic nanocrystals in an insulator matrix for nanofloating-gate memories
Advances in 3D integration and multibit storage devices
Ferroelectric materials and memory devices (FeRAM)
Multiferroic materials and devices
Magnetoresistive memory devices (MRAM)
Resistive switching memories (ReRAM)
Materials and technology for electrically controlled resistive switching concepts
Transparent and flexible memory devices and materials
Advances in materials and technology of Phase Change Memory devices
Advances in Polymer materials and molecular systems for memory devices

Invited Speakers:

KK_Materials and Technology for Non-Volatile Memories _0 (LETI, France)
KK_Materials and Technology for Non-Volatile Memories _1 (IMEC, Belgium)
KK_Materials and Technology for Non-Volatile Memories _2 (Crossbar, USA)
KK_Materials and Technology for Non-Volatile Memories _3 (SST-Microchip, USA)
KK_Materials and Technology for Non-Volatile Memories _4 (University of Modena, Italy)
KK_Materials and Technology for Non-Volatile Memories _5 (IBM, USA)
KK_Materials and Technology for Non-Volatile Memories _6 (LETI, France)
KK_Materials and Technology for Non-Volatile Memories _7 (National Institute of Advanced Industrial Science and Technology, Japan)
KK_Materials and Technology for Non-Volatile Memories _8 (NaMLab, Germany)
KK_Materials and Technology for Non-Volatile Memories _9 (TDK-Headway Technologies, USA)
KK_Materials and Technology for Non-Volatile Memories _10 (IBM, USA)
KK_Materials and Technology for Non-Volatile Memories _11 (University of Massachusetts, USA)